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1. 发明申请

US20100024728A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20100024728A1
公开(公告)日：2010-02-04
申请号：US12498639
申请日：2009-07-07
申请人： Takayuki NAKADA , Koichi Sada , Tomoyuki Matsuda
发明人： Takayuki NAKADA , Koichi Sada , Tomoyuki Matsuda
IPC分类号： C23C16/54
CPC分类号： C23C16/54 , C23C16/4401 , C23C16/4411 , C23C16/452 , C23C16/455 , C23C16/45561
摘要： A substrate processing apparatus comprises: a process chamber configured to accommodate a substrate; a gas supply line configured to supply gas into the process chamber; and an exhaust line configured to exhaust the inside of the process chamber. In the substrate processing apparatus, the gas supply line comprises: a preheating unit configured to preheat the gas before supplying the gas into the process chamber; a metal pipeline configured to supply the preheated gas into the process chamber; and a heat dissipation member covering the outer periphery of a bend section formed in the metal pipeline.
摘要翻译：衬底处理装置包括：处理室，被配置为容纳衬底; 气体供给管线，其构造成将气体供给到所述处理室中; 以及排气管，其构造成排出处理室的内部。在基板处理装置中，气体供给管线包括：预热单元，其构造成在将气体供给到处理室之前预热气体; 配置为将预热的气体供应到处理室中的金属管道; 以及覆盖形成在所述金属管道中的弯曲部的外周的散热构件。

2. 发明申请

US20100050945A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20100050945A1
公开(公告)日：2010-03-04
申请号：US12537017
申请日：2009-08-06
申请人： Shinya MORITA , Takayuki NAKADA , Tomoyuki MATSUDA , Keisuke SAKASHITA
发明人： Shinya MORITA , Takayuki NAKADA , Tomoyuki MATSUDA , Keisuke SAKASHITA
IPC分类号： C23C16/00
CPC分类号： C23C16/4412
摘要： When a quartz part is placed on a floor, the inside of a furnace is not polluted by contaminants attached from the floor to a seal surface of the quartz part and entering the inside of the furnace. A substrate processing apparatus includes a reaction tube, a first joining surface, a second joining surface, and a third joining surface. The reaction tube includes a quartz inner tube and a quartz outer tube. The first joining surface is configured to air-tightly join the outer tube and a quartz manifold. The second joining surface is configured to air-tightly join the manifold and a quartz seal cover. The third joining surface is configured to air-tightly join the seal cover and a seal cap. An O-ring is installed at least one of the first, second, and third joining surfaces, and a protrusion is installed outside the O-ring installed at the jointing surface.
摘要翻译：当石英部件放置在地板上时，炉内部不会被从地板附着到石英部件的密封表面并进入炉内的污染物污染。基板处理装置包括反应管，第一接合面，第二接合面和第三接合面。反应管包括石英内管和石英外管。第一接合表面构造成气密地连接外管和石英歧管。第二接合表面构造成气密地连接歧管和石英密封盖。第三连接表面构造成气密地连接密封盖和密封盖。 O形环安装在第一，第二和第三接合表面中的至少一个上，并且突起被安装在安装在接合表面处的O形环的外部。

3. 发明申请

US20090197409A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20090197409A1
公开(公告)日：2009-08-06
申请号：US12363059
申请日：2009-01-30
申请人： Shinya MORITA , Akihiro SATO , Akinori TANAKA , Shigeo NAKADA , Takayuki NAKADA , Shuhei SAIDO , Tomoyuki MATSUDA
发明人： Shinya MORITA , Akihiro SATO , Akinori TANAKA , Shigeo NAKADA , Takayuki NAKADA , Shuhei SAIDO , Tomoyuki MATSUDA
IPC分类号： H01L21/285 , C23C16/44
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/455 , H01L21/67098
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a nonmetallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold comprises a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.
摘要翻译：提供了一种基板处理装置。基板处理装置包括反应管; 构造成加热反应管的加热装置; 以及与加热装置相比并且由非金属材料制成的歧管。在垂直于反应管的中心轴的方向上限定的歧管的第一厚度大于在与反应管的中心轴平行的方向上与反应管相邻的位置处限定的歧管的第二厚度。歧管包括突出部分，其至少一部分比反应管的内壁向内突出;以及气体供应单元，设置在至少突出部分处，以将气体供应到反应管的内部。

4. 发明申请

US20110286819A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20110286819A1
公开(公告)日：2011-11-24
申请号：US13109566
申请日：2011-05-17
申请人： Koji SHIBATA , Tomoshi TANIYAMA , Takayuki NAKADA
发明人： Koji SHIBATA , Tomoshi TANIYAMA , Takayuki NAKADA
IPC分类号： H01L21/677 , B25J9/00
CPC分类号： H01L21/6773 , H01L21/67766 , H01L21/67781
摘要： A substrate processing apparatus includes a reactor; at least two boat conveying devices configured to convey at least two boats; at least one boat support table configured to support the at least two boats, the boat support table being movable to a position below the reactor; and a control unit configured to control the boat conveying devices such that when a first boat of the at least two boats supported by a first boat conveying device of the plurality of boat conveying devices holds a processed substrate processed by the reactor and is moved back to a position spaced apart from the reactor, a second boat of the at least two boats holding an unprocessed substrate is loaded into the reactor using a second boat conveying device of the at least two boat conveying devices.
摘要翻译：基板处理装置包括：反应器; 至少两个船舶输送装置，构造成输送至少两艘船; 至少一个船支撑台，其构造成支撑所述至少两个船，所述船支撑台可移动到所述反应器下方的位置; 以及控制单元，其构造成控制船舶输送装置，使得当由多个船运输装置中的第一船运输装置支撑的至少两艘船的第一船保持由反应堆处理的经处理的基底并且被移回到与所述反应器间隔开的位置，所述至少两个容纳未处理基板的船的第二船将使用所述至少两个船运输装置的第二船运输装置加载到所述反应器中。

5. 发明申请

US20120051873A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20120051873A1
公开(公告)日：2012-03-01
申请号：US13180079
申请日：2011-07-11
申请人： Koji SHIBATA , Tomoshi TANIYAMA , Takayuki NAKADA
发明人： Koji SHIBATA , Tomoshi TANIYAMA , Takayuki NAKADA
IPC分类号： H01L21/677
CPC分类号： H01L21/67201 , H01L21/67775
摘要： A substrate processing apparatus includes a substrate container holding shelf comprising a plurality of shelf boards configured to hold substrate containers thereon; a substrate container carrying mechanism configured to load and unload the substrate containers into/from the substrate container holding shelf; a substrate container holding shelf elevation mechanism configured to lift each of the plurality of the shelf boards of the substrate container holding shelf in a vertical direction; and a processing unit configured to receive at least one of the substrate containers from the substrate container holding shelf.
摘要翻译：基板处理装置包括：基板容器保持架，包括多个搁板，其构造成在其上保持基板容器; 衬底容器承载机构，其构造成将衬底容器装载到衬底容器保持架中或从衬底容器保持架上卸载; 基板容器保持搁架升降机构，其构造成在垂直方向上提升所述基板容器保持架的所述多个搁板中的每一个; 以及处理单元，其构造成从所述基板容器保持架接收所述基板容器中的至少一个。

6. 发明申请

US20120083120A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20120083120A1
公开(公告)日：2012-04-05
申请号：US13210978
申请日：2011-08-16
申请人： Takayuki NAKADA , Tomoshi TANIYAMA
发明人： Takayuki NAKADA , Tomoshi TANIYAMA
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/67757 , H01L21/67017 , H01L21/67028
摘要： A substrate processing apparatus includes a processing chamber in which a substrate is processed, a substrate holder configured to be loaded into and unloaded from the processing chamber while holding the substrate, a transfer chamber in which a charging operation for causing the substrate holder to hold an unprocessed substrate and a discharging operation for taking out a processed substrate from the substrate holder are performed, and a cleaning unit configured to blow clean air into the transfer chamber. The transfer chamber has a polygonal plan-view shape and includes corner areas. The cleaning unit is arranged in one of the corner areas of the transfer chamber.
摘要翻译：基板处理装置包括：处理基板的处理室;保持基板而被配置为装载到处理室中并从处理室卸载的基板保持器;传送室，其中使基板保持器保持执行未处理的基板和用于从基板保持器取出经处理的基板的排出操作，以及清洁单元，其构造成将清洁空气吹送到传送室中。传送室具有多边形平面形状并且包括拐角区域。清洁单元布置在传送室的一个角区域中。

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