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1. 发明申请

US20090197409A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20090197409A1
公开(公告)日：2009-08-06
申请号：US12363059
申请日：2009-01-30
申请人： Shinya MORITA , Akihiro SATO , Akinori TANAKA , Shigeo NAKADA , Takayuki NAKADA , Shuhei SAIDO , Tomoyuki MATSUDA
发明人： Shinya MORITA , Akihiro SATO , Akinori TANAKA , Shigeo NAKADA , Takayuki NAKADA , Shuhei SAIDO , Tomoyuki MATSUDA
IPC分类号： H01L21/285 , C23C16/44
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/455 , H01L21/67098
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a nonmetallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold comprises a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.
摘要翻译：提供了一种基板处理装置。基板处理装置包括反应管; 构造成加热反应管的加热装置; 以及与加热装置相比并且由非金属材料制成的歧管。在垂直于反应管的中心轴的方向上限定的歧管的第一厚度大于在与反应管的中心轴平行的方向上与反应管相邻的位置处限定的歧管的第二厚度。歧管包括突出部分，其至少一部分比反应管的内壁向内突出;以及气体供应单元，设置在至少突出部分处，以将气体供应到反应管的内部。

2. 发明申请

US20100050945A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20100050945A1
公开(公告)日：2010-03-04
申请号：US12537017
申请日：2009-08-06
申请人： Shinya MORITA , Takayuki NAKADA , Tomoyuki MATSUDA , Keisuke SAKASHITA
发明人： Shinya MORITA , Takayuki NAKADA , Tomoyuki MATSUDA , Keisuke SAKASHITA
IPC分类号： C23C16/00
CPC分类号： C23C16/4412
摘要： When a quartz part is placed on a floor, the inside of a furnace is not polluted by contaminants attached from the floor to a seal surface of the quartz part and entering the inside of the furnace. A substrate processing apparatus includes a reaction tube, a first joining surface, a second joining surface, and a third joining surface. The reaction tube includes a quartz inner tube and a quartz outer tube. The first joining surface is configured to air-tightly join the outer tube and a quartz manifold. The second joining surface is configured to air-tightly join the manifold and a quartz seal cover. The third joining surface is configured to air-tightly join the seal cover and a seal cap. An O-ring is installed at least one of the first, second, and third joining surfaces, and a protrusion is installed outside the O-ring installed at the jointing surface.
摘要翻译：当石英部件放置在地板上时，炉内部不会被从地板附着到石英部件的密封表面并进入炉内的污染物污染。基板处理装置包括反应管，第一接合面，第二接合面和第三接合面。反应管包括石英内管和石英外管。第一接合表面构造成气密地连接外管和石英歧管。第二接合表面构造成气密地连接歧管和石英密封盖。第三连接表面构造成气密地连接密封盖和密封盖。 O形环安装在第一，第二和第三接合表面中的至少一个上，并且突起被安装在安装在接合表面处的O形环的外部。

3. 发明申请

US20080284528A1 RESONATOR, OSCILLATOR, AND COMMUNICATION APPARATUS 有权
标题翻译：谐振器，振荡器和通信装置
公开(公告)号：US20080284528A1
公开(公告)日：2008-11-20
申请号：US12123913
申请日：2008-05-20
申请人： Shinya MORITA , Akira AKIBA
发明人： Shinya MORITA , Akira AKIBA
IPC分类号： H03B1/00
CPC分类号： H03H9/2431 , H03H9/2463 , H03H2009/02354 , H03H2009/02511
摘要： Disclosed is a resonator including a plurality of resonator elements each including at least oscillation parts and lower electrodes with an intervening space therebetween, in which the plurality of resonator elements are disposed in a closed system and the oscillation parts of the plurality of resonator elements are continuously formed in an integrated manner.
摘要翻译：公开了一种谐振器，其包括多个谐振元件，每个谐振器元件至少包括振荡部分和下部电极，其间具有中间空间，其中多个谐振器元件设置在闭合系统中，并且多个谐振器元件的振荡部分连续地形成一体的方式。

4. 发明申请

US20150255627A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20150255627A1
公开(公告)日：2015-09-10
申请号：US14721779
申请日：2015-05-26
申请人： Hiroshi GOTO , Aya MIKI , Tomoya KISHI , Kenta HIROSE , Shinya MORITA , Toshihiro KUGIMIYA
发明人： Hiroshi GOTO , Aya MIKI , Tomoya KISHI , Kenta HIROSE , Shinya MORITA , Toshihiro KUGIMIYA
IPC分类号： H01L29/786 , H01L29/24 , H01L27/12
CPC分类号： H01L29/78693 , C23C14/08 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/24 , H01L29/78606 , H01L29/78696
摘要： A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.
摘要翻译：至少在基板上至少含有栅极，栅极绝缘膜，氧化物半导体层，源极 - 漏极和钝化膜的薄膜晶体管。氧化物半导体层是含有第一氧化物半导体层（IGZTO）和第二氧化物半导体层（IZTO）的层压体。第二氧化物半导体层形成在栅极绝缘膜上，第一氧化物半导体层形成在第二氧化物半导体层和钝化膜之间。各金属元素相对于第一氧化物半导体层中除氧以外的全部金属元素的总量的含量如下： Ga：8％以上且30％以下; 在：25％以下，不含0％; Zn：35％以上65％以下; 和Sn：5％以上至30％以下。

5. 发明申请

US20130075720A1 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME, AND THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME 有权
标题翻译：氧化物半导体，包括其的薄膜晶体管，以及包括其的薄膜晶体管阵列
公开(公告)号：US20130075720A1
公开(公告)日：2013-03-28
申请号：US13554393
申请日：2012-07-20
申请人： Byung Du AHN , Je Hun LEE , Sei-Yong PARK , Jun Hyun PARK , Gun Hee KIM , Ji Hun LIM , Jae Woo PARK , Jin Seong PARK , Toshihiro KUGIMIYA , Aya MIKI , Shinya MORITA , Tomoya KISHI , Hiroaki TAO
发明人： Byung Du AHN , Je Hun LEE , Sei-Yong PARK , Jun Hyun PARK , Gun Hee KIM , Ji Hun LIM , Jae Woo PARK , Jin Seong PARK , Toshihiro KUGIMIYA , Aya MIKI , Shinya MORITA , Tomoya KISHI , Hiroaki TAO
IPC分类号： H01L29/786 , H01L29/38
CPC分类号： H01L29/7869 , H01L21/02565 , H01L27/1225 , H01L29/66969
摘要： An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.
摘要翻译：氧化物半导体包括包含选自锌（Zn）和锡（Sn）中的至少一种的第一材料和第二材料，其中通过减去第二材料和氧之间的电负性差值获得的值（O ）从第一材料和氧（O）之间的电负性差值小于约1.3。

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