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1. 发明申请

US20100327348A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND POWER-SUPPLY DEVICE USING THE SAME 失效
标题翻译：半导体器件及其制造方法和使用该电极的电源装置
公开(公告)号：US20100327348A1
公开(公告)日：2010-12-30
申请号：US12818485
申请日：2010-06-18
申请人： Takayuki HASHIMOTO , Takashi HIRAO , Noboru AKIYAMA
发明人： Takayuki HASHIMOTO , Takashi HIRAO , Noboru AKIYAMA
IPC分类号： H01L27/06 , H01L21/8234 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/41775 , H01L29/4933 , H01L29/66727 , H01L29/7803 , H02M3/1588 , Y02B70/1466
摘要： In a lateral-type power MOSFET, high breakdown voltage is achieved with suppressing to increase a cell pitch, and a feedback capacity and an ON resistance are decreased. An n− type silicon region having a high resistance to be a region of maintaining a breakdown voltage is vertically provided with respect to a main surface of an n+ type silicon substrate, and the n− type silicon region having the high resistance is connected to the n+ type silicon substrate. Also, a conductive substance is filled through an insulating substance inside a trench formed to reach the n+ type silicon substrate from the main surface of the n+ type silicon substrate so as to contact with the n− type silicon region having the high resistance, and the conductive substance is electrically connected to a source electrode.
摘要翻译：在横向型功率MOSFET中，通过抑制增加电池间距而实现高的击穿电压，并且降低反馈容量和导通电阻。相对于n +型硅衬底的主表面垂直地设置具有高电阻的n型硅区域作为保持击穿电压的区域，并且具有高电阻的n型硅区域连接到 n +型硅衬底。此外，导电物质通过绝缘物质填充在形成为从n +型硅衬底的主表面到达n +型硅衬底的沟槽内，以便与具有高电阻的n型硅区接触，并且导电物质电连接到源电极。

2. 发明申请

US20120287097A1 SEMICONDUCTOR DEVICE, LED DRIVING CIRCUIT, AND APPARATUS FOR DISPLAYING AN IMAGE 有权
标题翻译：半导体器件，LED驱动电路和用于显示图像的装置
公开(公告)号：US20120287097A1
公开(公告)日：2012-11-15
申请号：US13560613
申请日：2012-07-27
申请人： Noboru AKIYAMA , Takayuki HASHIMOTO , Takashi HIRAO , Nobuyoshi MATSUURA , Hideo ISHII
发明人： Noboru AKIYAMA , Takayuki HASHIMOTO , Takashi HIRAO , Nobuyoshi MATSUURA , Hideo ISHII
IPC分类号： G06F3/038 , H05B37/02
CPC分类号： H01L29/7813 , G09G3/342 , G09G2320/064 , H01L29/0615 , H01L29/0619 , H01L29/41766 , H01L29/7803 , H01L29/7811 , H01L29/7815 , H05B33/0818 , H05B33/0827 , H05B33/089 , Y02B20/347
摘要： The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.
摘要翻译：半导体器件包括在驱动LED阵列（串联数字×并联数n）的LED驱动电路（电流调节器）中，并且由多个（n个）LED驱动装置形成，在每个串中流动的电流（恒流驱动）。使用垂直半导体器件，例如垂直MOSFET作为LED驱动器件。作为恒流驱动装置的主装置和在调光期间用作断路开关的辅助装置都形成在由垂直半导体装置形成的装置的芯片的内部。在装置的第一表面中，主装置和附属装置的每个源区形成为通过隔离区彼此绝缘。

3. 发明申请

US20100289982A1 SEMICONDUCTOR DEVICE, LED DRIVING CIRCUIT, AND APPARATUS FOR DISPLAYING AN IMAGE 失效
标题翻译：半导体器件，LED驱动电路和用于显示图像的装置
公开(公告)号：US20100289982A1
公开(公告)日：2010-11-18
申请号：US12779343
申请日：2010-05-13
申请人： Noboru AKIYAMA , Takayuki HASHIMOTO , Takashi HIRAO , Nobuyoshi MATSUURA , Hideo ISHII
发明人： Noboru AKIYAMA , Takayuki HASHIMOTO , Takashi HIRAO , Nobuyoshi MATSUURA , Hideo ISHII
IPC分类号： G02F1/1335 , H05B37/02 , H01L29/66
CPC分类号： H01L29/7813 , G09G3/342 , G09G2320/064 , H01L29/0615 , H01L29/0619 , H01L29/41766 , H01L29/7803 , H01L29/7811 , H01L29/7815 , H05B33/0818 , H05B33/0827 , H05B33/089 , Y02B20/347
摘要： The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.
摘要翻译：半导体器件包括在驱动LED阵列（串联数字×并联数n）的LED驱动电路（电流调节器）中，并且由多个（n个）LED驱动装置形成，在每个串中流动的电流（恒流驱动）。使用垂直半导体器件，例如垂直MOSFET作为LED驱动器件。作为恒流驱动装置的主装置和在调光期间用作断路开关的辅助装置都形成在由垂直半导体装置形成的装置的芯片的内部。在装置的第一表面中，主装置和附属装置的每个源区形成为通过隔离区彼此绝缘。

4. 发明申请

US20100177127A1 LED DRIVING CIRCUIT, SEMICONDUCTOR ELEMENT AND IMAGE DISPLAY DEVICE 审中-公开
标题翻译： LED驱动电路，半导体元件和图像显示器件
公开(公告)号：US20100177127A1
公开(公告)日：2010-07-15
申请号：US12683697
申请日：2010-01-07
申请人： Noboru AKIYAMA , Takayuki HASHIMOTO , Takashi HIRAO , Nobuyoshi MATSUURA
发明人： Noboru AKIYAMA , Takayuki HASHIMOTO , Takashi HIRAO , Nobuyoshi MATSUURA
IPC分类号： G06F3/038 , G09G5/10
CPC分类号： G09G3/36
摘要： An LED driving circuit driving an LED array includes: n constant-current driving elements having a vertical structure, each of which is connected to each of LED strings in series and drives the LED string with a constant current; n constant-current control circuits controlling on voltages of the constant-current driving elements so that currents flowing to the LED strings become constant currents; a lowest-voltage detecting circuit to which terminal voltages of the constant-current driving elements on an LED string side are inputted, the lowest-voltage detecting circuit selecting a lowest voltage from among the terminal voltages and outputting a command signal based on difference between the lowest voltage and a predetermined set voltage; and a power-supply control circuit controlling a voltage applied to the LED array to a voltage lower than an initial set voltage based on the command signal.
摘要翻译：驱动LED阵列的LED驱动电路包括：具有垂直结构的n个恒定电流驱动元件，其各自串联连接到每个LED串，并以恒定电流驱动LED串; n个恒流控制电路，控制恒流驱动元件的电压，使流到LED串的电流成为恒定电流; 输入LED串侧的恒流驱动元件的端子电压的最低电压检测电路，所述最低电压检测电路从所述端子电压中选择最低电压，并基于所述第二电压检测电路最低电压和预定的设定电压; 以及电源控制电路，其基于所述命令信号，将施加到所述LED阵列的电压控制为低于初始设定电压的电压。

5. 发明申请

US20090243575A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY USING THE SAME 有权
标题翻译：半导体器件和使用该器件的电源
公开(公告)号：US20090243575A1
公开(公告)日：2009-10-01
申请号：US12388819
申请日：2009-02-19
申请人： Noboru AKIYAMA , Takayuki Hashimoto , Takashi Hirao , Koji Tateno , Takuya Ishigaki
发明人： Noboru AKIYAMA , Takayuki Hashimoto , Takashi Hirao , Koji Tateno , Takuya Ishigaki
IPC分类号： G05F1/00
CPC分类号： H02M3/156 , H02M2001/0025
摘要： A semiconductor device for control applied to a constant-voltage power supply device includes a digital-analog converter circuit which outputs a reference voltage corresponding to a value of a first register with taking an output voltage of a reference voltage source as a criterial reference voltage, and generates a control signal for driving a power semiconductor device based on an output voltage of an error amplifier which differentially amplifies a feedback voltage obtained by resistive-dividing on an output voltage of the constant-voltage power supply device and the reference voltage. An analog-digital converter circuit which converts the feedback voltage to a digital value with taking the output voltage of the constant-voltage power supply device as a reference voltage is provided, and based on the output, a value of a first register is corrected so as to offset an effect of an error in voltage dividing ratio of a voltage dividing resistor circuit.
摘要翻译：一种应用于恒压电源装置的控制用半导体装置，具备数模转换电路，该数模转换电路以取参考电压源的输出电压作为标准参考电压，输出与第一寄存器的值相对应的基准电压，并且基于误差放大器的输出电压产生用于驱动功率半导体器件的控制信号，所述误差放大器的差分放大通过对所述恒压电源装置的输出电压进行电阻分压而获得的反馈电压和所述参考电压。提供了一种模拟数字转换器电路，其将采取恒压电源装置的输出电压的反馈电压转换为数字值作为参考电压，并且基于该输出，第一寄存器的值被校正为以抵消分压电阻电路的分压比的误差的影响。

6. 发明申请

US20150260797A1 INSULATION FAILURE INSPECTING APPARATUS, INSULATION FAILURE INSPECTING METHOD USING SAME, AND METHOD FOR MANUFACTURING ELECTROCHEMICAL CELL 有权
标题翻译：绝缘失效检查装置，使用其的绝缘失败检查方法和制造电化学细胞的方法
公开(公告)号：US20150260797A1
公开(公告)日：2015-09-17
申请号：US14726898
申请日：2015-06-01
申请人： Takanori YAMASHITA , Hirohisa AKITA , Noboru AKIYAMA , Masataka OKUSHITA
发明人： Takanori YAMASHITA , Hirohisa AKITA , Noboru AKIYAMA , Masataka OKUSHITA
IPC分类号： G01R31/36 , G01R31/12 , H01M10/48
CPC分类号： G01R31/3641 , G01R31/025 , G01R31/12 , G01R31/1263 , H01G11/06 , H01G11/14 , H01G11/20 , H01G11/80 , H01G11/82 , H01M10/04 , H01M10/0525 , H01M10/48 , Y02E60/13 , Y10T29/49004
摘要： Disclosed is a method for manufacturing an electrochemical cell, wherein an insulation failure product can be accurately rejected, and an electrochemical cell can be used again after the insulation failure inspection. In the method for manufacturing the electrochemical cell (1), which is configured by hermetically housing an electrochemical cell main body (20) such that the leading end of a metal terminal (21) protrudes to the outside of the outer housing (10), an impulse voltage is applied between the metal terminal (21) and a metal foil layer (12), the waveform of the voltage applied to the capacitance between the metal terminal (21) and the metal foil layer (12) is measured, and the insulation failure inspection step is performed.
摘要翻译：公开了一种用于制造电化学电池的方法，其中可以准确地拒绝绝缘破坏产物，并且可以在绝缘故障检查之后再次使用电化学电池。在通过气密地容纳电化学电池主体（20）构成的电化学电池（1）的制造方法中，金属端子（21）的前端突出到外壳（10）的外部，在金属端子（21）和金属箔层（12）之间施加脉冲电压，测量施加在金属端子（21）与金属箔层（12）之间的电容的电压的波形，进行绝缘故障检查步骤。

7. 发明申请

US20120049290A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120049290A1
公开(公告)日：2012-03-01
申请号：US13293194
申请日：2011-11-10
申请人： Masaki SHIRAISHI , Noboru AKIYAMA , Tomoaki UNO , Nobuyoshi MATSUURA
发明人： Masaki SHIRAISHI , Noboru AKIYAMA , Tomoaki UNO , Nobuyoshi MATSUURA
IPC分类号： H01L27/092
CPC分类号： G05F3/08 , H01L23/3107 , H01L23/4824 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L29/1095 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4238 , H01L29/7811 , H01L29/7813 , H01L29/7835 , H01L2224/05554 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48644 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2224/85375 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01059 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/12032 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In order to reduce parasitic inductance of a main circuit in a power supply circuit, a non-insulated DC-DC converter is provided having a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOS•FET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.
摘要翻译：为了减少电源电路中的主电路的寄生电感，提供了一种非绝缘DC-DC转换器，其具有电路，其中用于高侧开关的功率MOS•FET和功率MOS•FET用于低侧开关串联连接。在非绝缘DC-DC转换器中，高侧开关的功率MOS•FET由ap沟道垂直MOS•FET形成，低边开关功率MOS•FET由n沟道垂直 MOS•FET。因此，形成有用于高侧开关的功率MOS·FET的半导体芯片和形成有用于低侧开关的功率MOS·FET的半导体芯片安装在相同的芯片焊盘上，并且通过芯片垫

8. 发明申请

US20130106388A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20130106388A1
公开(公告)日：2013-05-02
申请号：US13727680
申请日：2012-12-27
申请人： Masaki SHIRAISHI , Noboru AKIYAMA , Tomoaki UNO , Nobuyoshi MATSUURA
发明人： Masaki SHIRAISHI , Noboru AKIYAMA , Tomoaki UNO , Nobuyoshi MATSUURA
IPC分类号： G05F3/08
CPC分类号： G05F3/08 , H01L23/3107 , H01L23/4824 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L29/1095 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4238 , H01L29/7811 , H01L29/7813 , H01L29/7835 , H01L2224/05554 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48644 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2224/85375 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01059 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/12032 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In order to reduce parasitic inductance of a main circuit in a power supply circuit, a non-insulated DC-DC converter is provided having a circuit in which a power MOS·FET for a high-side switch and a power MOS·FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS·FET for the high-side switch is formed by a p channel vertical MOS·FET, and the power MOS·FET for the low-side switch is formed by an n channel vertical MOS·FET. Thus, a semiconductor chip formed with the power MOS·FET for the high-side switch and a semiconductor chip formed with the power MOS·FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.
摘要翻译：为了减少电源电路中的主电路的寄生电感，提供了一种非绝缘DC-DC转换器，其具有电路，其中用于高侧开关的功率MOS·FET和用于高侧开关的功率MOS·FET 低侧开关串联连接。在非绝缘DC-DC转换器中，高侧开关用功率MOS·FET由p沟道垂直MOS·FET形成，低边开关用功率MOS·FET由n沟道垂直 MOS·FET。因此，形成有用于高侧开关的功率MOS·FET的半导体芯片和形成有用于低侧开关的功率MOS·FET的半导体芯片安装在相同的芯片焊盘上，并且通过芯片垫

9. 发明申请

US20090023021A1 Fuel Cell Apparatus And Electronic Appliances Mounting The Same 审中-公开
标题翻译：燃料电池装置和电子设备安装相同
公开(公告)号：US20090023021A1
公开(公告)日：2009-01-22
申请号：US12233788
申请日：2008-09-19
申请人： Yasuaki NORIMATSU , Akihiko KANOUDA , Noboru AKIYAMA , Mutsumi KIKUCHI
发明人： Yasuaki NORIMATSU , Akihiko KANOUDA , Noboru AKIYAMA , Mutsumi KIKUCHI
IPC分类号： H01M8/06
CPC分类号： H01M8/04313 , H01M8/04186 , H01M8/04753 , H01M8/1009
摘要： In order to provide a fuel cell apparatus with an effective energy consumption by selecting a suitable fuel cartridge mounted on the apparatus, the present invention provides a fuel cell apparatus comprising at least two fuel storage sections for storing fuel for power generation, wherein at least one of the storage sections is selected and used, while the fuel cell is in service.
摘要翻译：为了通过选择安装在设备上的合适的燃料盒来提供具有有效能量消耗的燃料电池装置，本发明提供了一种燃料电池装置，其包括至少两个用于储存用于发电的燃料的燃料储存部分，其中至少一个在燃料电池正在使用中选择和使用存储部分。

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