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1. 发明授权

US09418986B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09418986B2
公开(公告)日：2016-08-16
申请号：US13589160
申请日：2012-08-19
申请人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa
发明人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa
IPC分类号： H01L27/088 , H01L23/495 , H01L25/16 , H02M1/32 , H02M3/156 , H01L21/8234 , H01L23/00 , H01L25/07 , H02M1/00
CPC分类号： H01L27/088 , H01L21/823487 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/73 , H01L25/074 , H01L25/16 , H01L2224/05554 , H01L2224/0603 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/3754 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H02M1/32 , H02M3/156 , H02M2001/0009 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device is improved in reliability. A power MOSFET for switching, and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion, and sealed in a resin. To first and second source pads for outputting the current flowing in the power MOSFET, a metal plate is bonded. A third source pad for sensing the source voltage of the power MOSFET is at a position not overlapping the metal plate. A coupled portion between a source wire forming the third pad and another source wire forming the first and second pads is at a position overlapping the metal plate.
摘要翻译：提高了半导体器件的可靠性。在一个半导体芯片中形成用于切换的功率MOSFET和用于感测功率MOSFET中流过的电流的感测MOSFET，该功率MOSFET的面积小于功率MOSFET。半导体芯片安装在芯片安装部分上，并密封在树脂中。对于用于输出在功率MOSFET中流动的电流的第一和第二源极焊盘，金属板被接合。用于感测功率MOSFET的源极电压的第三源极焊盘位于与金属板不重叠的位置。形成第三焊盘的源极线和形成第一和第二焊盘的另一源极之间的耦合部分处于与金属板重叠的位置。

2. 发明授权

US08680830B2 Power supply device 有权
标题翻译：电源设备
公开(公告)号：US08680830B2
公开(公告)日：2014-03-25
申请号：US13229781
申请日：2011-09-12
申请人： Ryotaro Kudo , Tomoaki Uno , Koji Tateno , Hideo Ishii , Kazuyuki Umezu , Koji Saikusa
发明人： Ryotaro Kudo , Tomoaki Uno , Koji Tateno , Hideo Ishii , Kazuyuki Umezu , Koji Saikusa
IPC分类号： G05F1/00
CPC分类号： H02M3/158 , G06F1/26 , H02M3/1584 , H02M2003/1586
摘要： Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.
摘要翻译：可以实现多相电源装置的小型化。电源控制单元，其中例如在单个芯片上形成微控制器单元，存储单元和模拟控制器单元，多个配备PWM的驱动单元和多个电感器构成多相电源。微控制器单元输出每个具有基于存储器单元上的程序定义的频率和相位到相应的配备有PWM的驱动单元的时钟信号。模拟控制器单元检测负载的电压值与通过串行接口获取的目标电压值之间的差值，并输出误差放大器信号。每个配备PWM的驱动单元通过使用时钟信号和误差放大器信号的峰值电流控制系统驱动每个电感器。

3. 发明申请

US20140077778A1 TRENCH MOSFET HAVING AN INDEPENDENT COUPLED ELEMENT IN A TRENCH 有权
标题翻译：在TRENCH中具有独立耦合元件的TRENCH MOSFET
公开(公告)号：US20140077778A1
公开(公告)日：2014-03-20
申请号：US13617744
申请日：2012-09-14
申请人： Tetsuo Sato , Tomoaki Uno , Hirokazu Kato , Nobuyoshi Matsuura
发明人： Tetsuo Sato , Tomoaki Uno , Hirokazu Kato , Nobuyoshi Matsuura
IPC分类号： H01L29/78 , G05F1/00
CPC分类号： H02M3/158 , H01L27/0629 , H01L28/10 , H01L29/407 , H01L29/41766 , H01L29/42336 , H01L29/4916 , H01L29/7803 , H01L29/7813 , H02M1/08 , H02M1/44 , H03K7/08 , H03K17/162 , H03K17/165 , H03K2017/6878 , H03K2217/0036
摘要： A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.
摘要翻译：公开了一种沟槽MOSFET，其包括具有包含栅极的垂直取向沟槽的半导体衬底。沟槽MOSFET还包括源极，漏极和导电元件。导电元件像栅极一样被包含在沟槽中，并且在栅极和沟槽的底部之间延伸。导电元件与源极，栅极和漏极电隔离。当用于诸如DC-DC转换器的器件中时，沟槽MOSFET可以减少功率损耗和电和电磁噪声。

4. 发明申请

US20130001792A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130001792A1
公开(公告)日：2013-01-03
申请号：US13531567
申请日：2012-06-24
申请人： Tomoaki UNO , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
发明人： Tomoaki UNO , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
IPC分类号： H01L23/48
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/4824 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/73 , H01L2224/05554 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H02M3/1588 , H02M2001/0009 , Y02B70/1466 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.
摘要翻译：用于开关的功率MOSFET和具有小于功率MOSFET的面积并且被配置为检测流过功率MOSFET的电流的感测MOSFET形成在一个半导体芯片CPH内，并且半导体芯片CPH安装在芯片安装部分通过导电接合材料并用树脂密封。在半导体芯片CPH的主表面中，形成感测MOSFET的感测MOSFET区域位于读出MOSFET区域RG2的源极焊盘PDHS4的内部。此外，在半导体芯片的主表面中，感测MOSFET区域RG2由形成功率MOSFET的区域包围。

5. 发明授权

US08345458B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08345458B2
公开(公告)日：2013-01-01
申请号：US13293194
申请日：2011-11-10
申请人： Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
发明人： Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
IPC分类号： H02M1/10 , H01L23/48 , H05K7/02
CPC分类号： G05F3/08 , H01L23/3107 , H01L23/4824 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L29/1095 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4238 , H01L29/7811 , H01L29/7813 , H01L29/7835 , H01L2224/05554 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48644 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2224/85375 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01059 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/12032 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In order to reduce parasitic inductance of a main circuit in a power supply circuit, a non-insulated DC-DC converter is provided having a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOS•FET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.
摘要翻译：为了减少电源电路中的主电路的寄生电感，提供了一种非绝缘DC-DC转换器，其具有电路，其中用于高侧开关的功率MOS•FET和功率MOS•FET用于低侧开关串联连接。在非绝缘DC-DC转换器中，高侧开关的功率MOS•FET由ap沟道垂直MOS•FET形成，低边开关功率MOS•FET由n沟道垂直 MOS•FET。因此，形成有用于高侧开关的功率MOS·FET的半导体芯片和形成有用于低侧开关的功率MOS·FET的半导体芯片安装在相同的芯片焊盘上，并且通过芯片垫

6. 发明授权

US08237232B2 Semiconductor device including a DC-DC converter having a metal plate 失效
标题翻译：包括具有金属板的DC-DC转换器的半导体器件
公开(公告)号：US08237232B2
公开(公告)日：2012-08-07
申请号：US13050313
申请日：2011-03-17
申请人： Tomoaki Uno , Nobuyoshi Matsuura , Yukihiro Sato , Keiichi Okawa , Tetsuya Kawashima , Kisho Ashida
发明人： Tomoaki Uno , Nobuyoshi Matsuura , Yukihiro Sato , Keiichi Okawa , Tetsuya Kawashima , Kisho Ashida
IPC分类号： H01L23/02 , H01L31/111
CPC分类号： H01L23/50 , H01L23/3107 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/91 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/4007 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4847 , H01L2224/48624 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/05042 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/351 , H01L2924/01039 , H01L2924/00 , H01L2924/00012 , H01L2924/207
摘要： The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring.
摘要翻译：提高了半导体器件的电气特性。在半导体器件的封装中，存在其中形成有功率MOS-FET的封装的第一和第二半导体芯片，以及具有用于控制其中形成的工作的控制电路的第三半导体芯片。高侧的第一半导体芯片的源极的接合焊盘通过金属板电连接到管芯焊盘。低侧的第二半导体芯片的源电极接合焊盘通过金属板电连接到引线。金属板包括与第二半导体芯片的焊盘接触的第一部分，从第一部分的短边延伸到引线布线的第二部分和从第一部分的长边延伸到第三部分的第三部分引线。

7. 发明申请

US20120086416A1 POWER SUPPLY DEVICE 有权
标题翻译：电源设备
公开(公告)号：US20120086416A1
公开(公告)日：2012-04-12
申请号：US13229781
申请日：2011-09-12
申请人： Ryotaro KUDO , Tomoaki UNO , Koji TATENO , Hideo ISHII , Kazuyuki UMEZU , Koji SAIKUSA
发明人： Ryotaro KUDO , Tomoaki UNO , Koji TATENO , Hideo ISHII , Kazuyuki UMEZU , Koji SAIKUSA
IPC分类号： G05F1/00
CPC分类号： H02M3/158 , G06F1/26 , H02M3/1584 , H02M2003/1586
摘要： Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.
摘要翻译：可以实现多相电源装置的小型化。电源控制单元，其中例如在单个芯片上形成微控制器单元，存储单元和模拟控制器单元，多个配备PWM的驱动单元和多个电感器构成多相电源。微控制器单元输出每个具有基于存储器单元上的程序定义的频率和相位到相应的配备有PWM的驱动单元的时钟信号。模拟控制器单元检测负载的电压值与通过串行接口获取的目标电压值之间的差值，并输出误差放大器信号。每个配备PWM的驱动单元通过使用时钟信号和误差放大器信号的峰值电流控制系统驱动每个电感器。

8. 发明授权

US08064235B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08064235B2
公开(公告)日：2011-11-22
申请号：US12912796
申请日：2010-10-27
申请人： Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
发明人： Masaki Shiraishi , Noboru Akiyama , Tomoaki Uno , Nobuyoshi Matsuura
IPC分类号： H02M1/00 , H01L23/48 , H05K7/02
CPC分类号： G05F3/08 , H01L23/3107 , H01L23/4824 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L29/1095 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4238 , H01L29/7811 , H01L29/7813 , H01L29/7835 , H01L2224/05554 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48644 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2224/85375 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01059 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/12032 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In order to reduce parasitic inductance of a main circuit in a power supply circuit, a non-insulated DC-DC converter is provided including a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p-channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOS•FET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.
摘要翻译：为了减少电源电路中的主电路的寄生电感，提供了一种非绝缘DC-DC转换器，其包括其中用于高侧开关的功率MOS•FET和功率MOS•FET用于低侧开关串联连接。在非绝缘DC-DC转换器中，高侧开关的功率MOS•FET由p沟道垂直MOS•FET形成，而低边开关的功率MOS•FET由n形成通道垂直MOS•FET。因此，形成有用于高侧开关的功率MOS·FET的半导体芯片和形成有用于低侧开关的功率MOS·FET的半导体芯片安装在相同的芯片焊盘上，并且通过芯片垫

9. 发明授权

US07863756B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07863756B2
公开(公告)日：2011-01-04
申请号：US12237082
申请日：2008-09-24
申请人： Tomoaki Uno , Masaki Shiraishi , Nobuyoshi Matsuura , Toshio Nagasawa
发明人： Tomoaki Uno , Masaki Shiraishi , Nobuyoshi Matsuura , Toshio Nagasawa
IPC分类号： H01L23/48 , H01L29/66
CPC分类号： H02M1/08 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40137 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2224/8485 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01059 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2924/20753
摘要： A non-insulated DC-DC converter has a power MOS•FET for a highside switch and a power MOS•FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS•FET for the highside switch and the power MOS•FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS•FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.
摘要翻译：非绝缘DC-DC转换器具有用于高侧开关的功率MOS•FET和用于低端开关的功率MOS•FET。在非绝缘DC-DC转换器中，用于高边开关的功率MOS•FET和用于低端开关的功率MOS•FET分别控制这些元件的工作的驱动电路和与之并联连接的肖特基势垒二极管用于低端开关的功率MOS•FET分别形成在四个不同的半导体芯片中。这四个半导体芯片容纳在一个封装中。半导体芯片安装在相同的芯片焊盘上。半导体芯片被配置为彼此接近。

10. 发明申请

US20100141229A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20100141229A1
公开(公告)日：2010-06-10
申请号：US12708044
申请日：2010-02-18
申请人： Yukihiro SATOU , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
发明人： Yukihiro SATOU , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
IPC分类号： G05F1/10
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS·FET for a high side switch and a power MOS·FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
摘要翻译：本发明提供一种非绝缘型DC-DC转换器，其具有用于高侧开关的功率MOS·FET和低侧开关的功率MOS·FET串联连接的电路。在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

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