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    • 3. 发明授权
    • Method of producing a solid-state imaging device
    • 固态成像装置的制造方法
    • US07998778B2
    • 2011-08-16
    • US12662982
    • 2010-05-14
    • Hideo KanbeTakayuki Ezaki
    • Hideo KanbeTakayuki Ezaki
    • H01L31/18
    • H01L31/18H01L27/14601H01L27/1464H01L27/14643H01L27/14687
    • To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.
    • 为了提供能够提高基板的光入射侧的透明绝缘膜的透光率的固态成像装置,抑制暗电流,并且防止量子效率的损失,其中像素电路形成在第一表面 基板和光从第二表面接收,并具有:形成在基板中的光接收单元,用于产生对应于入射光量的信号电荷并存储; 形成在第二表面上的透明第一绝缘膜; 以及透明的第二绝缘膜,形成在所述第一绝缘膜上并且用于保持与所述第一绝缘膜的界面中或内部具有与所述信号电荷相同的极性的电荷,所述第一绝缘膜和所述第二绝缘膜的厚度被确定为获得 透射率高于仅使用第一绝缘膜时的透射率。
    • 4. 发明申请
    • SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND CAMERA
    • 固态成像装置,其制造方法和相机
    • US20110065225A1
    • 2011-03-17
    • US12815879
    • 2010-06-15
    • Hideo KanbeTakayuki Ezaki
    • Hideo KanbeTakayuki Ezaki
    • H01L31/18
    • H01L31/18H01L27/14601H01L27/1464H01L27/14643H01L27/14687
    • To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.
    • 为了提供能够提高基板的光入射侧的透明绝缘膜的透光率的固态成像装置,抑制暗电流,并且防止量子效率的损失,其中像素电路形成在第一表面 基板和光从第二表面接收,并具有:形成在基板中的光接收单元,用于产生对应于入射光量的信号电荷并存储; 形成在第二表面上的透明第一绝缘膜; 以及透明的第二绝缘膜,形成在所述第一绝缘膜上并且用于保持与所述第一绝缘膜的界面中或内部具有与所述信号电荷相同的极性的电荷,所述第一绝缘膜和所述第二绝缘膜的厚度被确定为获得 透射率高于仅使用第一绝缘膜时的透射率。
    • 5. 发明授权
    • Method of manufacturing back illuminated solid-state imaging device with improved transmittance of visible light
    • 制造具有改善的可见光透射率的背照式固态成像装置的方法
    • US08349638B2
    • 2013-01-08
    • US13137210
    • 2011-07-28
    • Hideo KanbeTakayuki Ezaki
    • Hideo KanbeTakayuki Ezaki
    • H01L31/18
    • H01L31/18H01L27/14601H01L27/1464H01L27/14643H01L27/14687
    • To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.
    • 为了提供能够提高基板的光入射侧的透明绝缘膜的透光率的固态成像装置,抑制暗电流,并且防止量子效率的损失,其中像素电路形成在第一表面 基板和光从第二表面接收,并具有:形成在基板中的光接收单元,用于产生对应于入射光量的信号电荷并存储; 形成在第二表面上的透明第一绝缘膜; 以及透明的第二绝缘膜,形成在所述第一绝缘膜上并且用于保持与所述第一绝缘膜的界面中或内部具有与所述信号电荷相同的极性的电荷,所述第一绝缘膜和所述第二绝缘膜的厚度被确定为获得 透射率高于仅使用第一绝缘膜时的透射率。
    • 6. 发明申请
    • Solid-state imaging device, method of producing the same, and camera
    • 固态成像装置,其制造方法和相机
    • US20110287569A1
    • 2011-11-24
    • US13137210
    • 2011-07-28
    • Hideo KanbeTakayuki Ezaki
    • Hideo KanbeTakayuki Ezaki
    • H01L31/18
    • H01L31/18H01L27/14601H01L27/1464H01L27/14643H01L27/14687
    • To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.
    • 为了提供能够提高基板的光入射侧的透明绝缘膜的透光率的固态成像装置,抑制暗电流,并且防止量子效率的损失,其中像素电路形成在第一表面 基板和光从第二表面接收,并具有:形成在基板中的光接收单元,用于产生对应于入射光量的信号电荷并存储; 形成在第二表面上的透明第一绝缘膜; 以及透明的第二绝缘膜,形成在所述第一绝缘膜上并且用于保持与所述第一绝缘膜的界面中或内部具有与所述信号电荷相同的极性的电荷,所述第一绝缘膜和所述第二绝缘膜的厚度被确定为获得 透射率高于仅使用第一绝缘膜时的透射率。
    • 7. 发明授权
    • Solid-state imaging device and camera implementing the same
    • 固态成像装置和相机实现相同
    • US07737520B2
    • 2010-06-15
    • US11181748
    • 2005-07-15
    • Hideo KanbeTakayuki Ezaki
    • Hideo KanbeTakayuki Ezaki
    • H01L31/00
    • H01L31/18H01L27/14601H01L27/1464H01L27/14643H01L27/14687
    • To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent quantum efficiency loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and it has: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, and when the thicknesses of the first and second insulation films are determined to obtain a transmittance higher than when using only the first insulation film.
    • 为了提供能够提高基板的光入射侧的透明绝缘膜的透光率的固态成像装置,抑制暗电流,并且防止量子效率损失,其中像素电路形成在第一表面中 基板和光从第二表面接收,并且具有:形成在基板中并用于产生对应于入射光量的信号电荷并将其存储的光接收单元; 形成在第二表面上的透明第一绝缘膜; 以及透明的第二绝缘膜,形成在所述第一绝缘膜上并且用于保持与所述第一绝缘膜的界面中或内部具有与所述信号电荷相同极性的电荷,并且当确定所述第一绝缘膜和所述第二绝缘膜的厚度时 以获得高于仅使用第一绝缘膜时的透射率。
    • 8. 发明申请
    • Solid-state imaging device, method of producing the same, and camera
    • 固态成像装置,其制造方法和相机
    • US20060033827A1
    • 2006-02-16
    • US11181748
    • 2005-07-15
    • Hideo KanbeTakayuki Ezaki
    • Hideo KanbeTakayuki Ezaki
    • H04N3/14H04N5/335
    • H01L31/18H01L27/14601H01L27/1464H01L27/14643H01L27/14687
    • To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.
    • 为了提供能够提高基板的光入射侧的透明绝缘膜的透光率的固态成像装置,抑制暗电流,并且防止量子效率的损失,其中像素电路形成在第一表面 基板和光从第二表面接收,并具有:形成在基板中的光接收单元,用于产生对应于入射光量的信号电荷并存储; 形成在第二表面上的透明第一绝缘膜; 以及透明的第二绝缘膜,形成在所述第一绝缘膜上并且用于保持与所述第一绝缘膜的界面中或内部具有与所述信号电荷相同的极性的电荷,所述第一绝缘膜和所述第二绝缘膜的厚度被确定为获得 透射率高于仅使用第一绝缘膜时的透射率。
    • 10. 发明申请
    • Solid-state imaging device, and camera implementing the same
    • 固态成像装置和相机实现相同
    • US20100227427A1
    • 2010-09-09
    • US12662982
    • 2010-05-14
    • Hideo KanbeTakayuki Ezaki
    • Hideo KanbeTakayuki Ezaki
    • H01L31/18
    • H01L31/18H01L27/14601H01L27/1464H01L27/14643H01L27/14687
    • To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.
    • 为了提供能够提高基板的光入射侧的透明绝缘膜的透光率的固态成像装置,抑制暗电流,并且防止量子效率的损失,其中像素电路形成在第一表面 基板和光从第二表面接收,并具有:形成在基板中的光接收单元,用于产生对应于入射光量的信号电荷并存储; 形成在第二表面上的透明第一绝缘膜; 以及透明的第二绝缘膜,形成在所述第一绝缘膜上并且用于保持与所述第一绝缘膜的界面中或内部具有与所述信号电荷相同的极性的电荷,所述第一绝缘膜和所述第二绝缘膜的厚度被确定为获得 透射率高于仅使用第一绝缘膜时的透射率。