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    • 1. 发明授权
    • Method of producing solid state imaging device with optimized locations of internal electrical components
    • 制造具有内部电气部件优化位置的固态成像装置的方法
    • US08643757B2
    • 2014-02-04
    • US12461932
    • 2009-08-28
    • Hideo Kanbe
    • Hideo Kanbe
    • H04N3/14H04N5/335
    • H04N5/335H01L27/14621H01L27/14627H01L27/14687H01L27/14812H01L27/14843
    • A solid state imaging device improving and stabilizing imaging characteristic by optimizing a location of a positive hole accumulation layer to an electrode at the periphery of a light receiving portion, and having light receiving portions formed on a substrate and electrodes formed on the substrate at the periphery of the light receiving portion, each electrode including at least a first electrode to which a positive voltage is applied and a second electrode to which only 0 volt or a negative polarity voltage is applied, each light receiving portion having a signal charge accumulation region formed on the substrate and a positive hole accumulation region formed in a surface layer portion of the signal charge accumulation region, each positive hole accumulation region arranged at a distance from the first electrode and arranged so as to overlap the second electrode, and method of producing the same and a camera.
    • 一种固态成像装置,其通过将空穴积聚层的位置优化到光接收部分的周围的电极,并且具有形成在基板上的光接收部分和在周边的基板上形成的电极来优化和稳定成像特性 每个电极包括至少施加正电压的第一电极和仅施加0伏特或负极性电压的第二电极,每个光接收部分具有形成在第一电极上的信号电荷累积区域 所述基板和形成在所述信号电荷累积区域的表层部的正空穴积存区域,与所述第一电极配置成与所述第一电极重叠配置的每个空穴积存区域,以及与所述第二电极重叠的方法 和相机。
    • 2. 发明授权
    • Method of producing a solid-state imaging device
    • 固态成像装置的制造方法
    • US07998778B2
    • 2011-08-16
    • US12662982
    • 2010-05-14
    • Hideo KanbeTakayuki Ezaki
    • Hideo KanbeTakayuki Ezaki
    • H01L31/18
    • H01L31/18H01L27/14601H01L27/1464H01L27/14643H01L27/14687
    • To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.
    • 为了提供能够提高基板的光入射侧的透明绝缘膜的透光率的固态成像装置,抑制暗电流,并且防止量子效率的损失,其中像素电路形成在第一表面 基板和光从第二表面接收,并具有:形成在基板中的光接收单元,用于产生对应于入射光量的信号电荷并存储; 形成在第二表面上的透明第一绝缘膜; 以及透明的第二绝缘膜,形成在所述第一绝缘膜上并且用于保持与所述第一绝缘膜的界面中或内部具有与所述信号电荷相同的极性的电荷,所述第一绝缘膜和所述第二绝缘膜的厚度被确定为获得 透射率高于仅使用第一绝缘膜时的透射率。
    • 4. 发明授权
    • Solid-state imaging device, production method and drive method thereof, and camera
    • 固态成像装置,其制作方法及其驱动方法及相机
    • US07667251B2
    • 2010-02-23
    • US11681440
    • 2007-03-02
    • Hideo Kanbe
    • Hideo Kanbe
    • H01L31/062H01L31/113
    • H01L27/14812H01L27/14843
    • A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon layer is adopted. Two shunt wirings extending in a horizontal direction are formed on the first transfer electrodes connected in a horizontal direction and, for example, four-phase transfer pulses are supplied to first transfer electrodes and second transfer electrodes on transfer channels through low-resistance shunt wirings extending in the horizontal direction.
    • 一种固态成像装置,其能够减少光接收部的圆周部分处的入射光的蚀刻(阻挡),并实现更大的视角和高速驱动。 采用通过一个多晶硅层形成第一转移电极和第二转移电极的单层转移电极配置。 在水平方向上连接的第一传输电极上形成两个沿水平方向延伸的分路布线,例如通过低电阻分流布线向传输通道上的第一传输电极和第二传输电极提供四相转移脉冲 在水平方向。
    • 5. 发明授权
    • Solid-state imaging device, production method and drive method thereof, and camera
    • 固态成像装置,其制作方法及其驱动方法及相机
    • US07348614B2
    • 2008-03-25
    • US11179963
    • 2005-07-12
    • Hideo Kanbe
    • Hideo Kanbe
    • H01L31/062H01L31/113
    • H01L27/14812H01L27/14843
    • A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon layer is adopted. Two shunt wirings extending in a horizontal direction are formed on the first transfer electrodes connected in a horizontal direction and, for example, four-phase transfer pulses are supplied to first transfer electrodes and second transfer electrodes on transfer channels through low-resistance shunt wirings extending in the horizontal direction.
    • 一种固态成像装置,其能够减少光接收部的圆周部分处的入射光的蚀刻(阻挡),并实现更大的视角和高速驱动。 采用通过一个多晶硅层形成第一转移电极和第二转移电极的单层转移电极配置。 在水平方向上连接的第一传输电极上形成两个沿水平方向延伸的分路布线,例如通过低电阻分流布线向传输通道上的第一传输电极和第二传输电极提供四相转移脉冲 在水平方向。
    • 8. 发明申请
    • SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD AND DRIVE METHOD THEREOF, AND CAMERA
    • 固态成像装置,其制造方法及其驱动方法及相机
    • US20070155042A1
    • 2007-07-05
    • US11681436
    • 2007-03-02
    • Hideo Kanbe
    • Hideo Kanbe
    • H01L21/00
    • H01L27/14812H01L27/14843
    • A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of forming first transfer electrodes and second transfer electrodes by one polysilicon layer is adopted. Two shunt wirings extending in a horizontal direction are formed on the first transfer electrodes connected in a horizontal direction and, for example, four-phase transfer pulses are supplied to first transfer electrodes and second transfer electrodes on transfer channels through low-resistance shunt wirings extending in the horizontal direction.
    • 一种固态成像装置,其能够减少光接收部的圆周部分处的入射光的蚀刻(阻挡),并实现更大的视角和高速驱动。 采用通过一个多晶硅层形成第一转移电极和第二转移电极的单层转移电极配置。 在水平方向上连接的第一传输电极上形成两个沿水平方向延伸的分路布线,例如通过低电阻分流布线向传输通道上的第一传输电极和第二传输电极提供四相转移脉冲 在水平方向。
    • 9. 发明申请
    • Solid-state imaging device, method of producing the same and camera
    • 固态成像装置及其制造方法及相机
    • US20070086763A1
    • 2007-04-19
    • US11602891
    • 2006-11-20
    • Hideo Kanbe
    • Hideo Kanbe
    • G03B17/50
    • H01L27/14843H01L27/14687
    • The prevent invention is to provide a solid-state imaging device having a electrode configuration applicable to a progressive scan, and able to reduce a obstruction of incident light at the periphery of a light receiving portion, a method of producing the same, a camera including the same. A first transfer electrode, a second transfer electrode, and a third transfer electrode which have a single layer transfer electrode configuration are repeatedly arranged in a vertical direction. The first transfer electrodes are connected in a horizontal direction by an inter-pixel interconnection formed in the same layer. Shunt interconnections are formed in the horizontal direction and in the vertical direction above the transfer layers. The shunt interconnection connected to the second transfer interconnection is formed on the inter-pixel interconnection. The shunt interconnection connected to the third transfer electrode is formed above the transfer electrodes.
    • 本发明的目的是提供一种具有适用于逐行扫描的电极结构的固态成像装置,其能够减少光接收部分周围的入射光的阻塞,其制造方法,包括 一样。 具有单层转移电极结构的第一转移电极,第二转移电极和第三转移电极在垂直方向上重复布置。 第一传输电极通过形成在同一层中的像素间互连在水平方向上连接。 在转移层上方的水平方向和垂直方向上形成分流互连。 连接到第二传输互连的并联互连形成在像素间互连上。 连接到第三转移电极的分流互连形成在转移电极之上。