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1. 发明申请

US20120161267A1 SOLID-STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取器件
公开(公告)号：US20120161267A1
公开(公告)日：2012-06-28
申请号：US13333609
申请日：2011-12-21
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L31/02
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L29/4236 , H01L31/02
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
摘要翻译：根据本发明的固态图像拾取器件1包括其上形成有由光电二极管3和晶体管构成的像素20的半导体衬底2。包括像素20的晶体管形成在半导体衬底的表面上，在半导体衬底2内部设置形成在光电二极管3的高浓度区域之间的pn结部分，并且光电二极管3的pn结部分的一部分被延伸到形成在半导体衬底2的表面上的晶体管的下部。根据本发明，提供一种固态图像拾取器件，其中像素尺寸可以在不降低饱和电荷量的情况下被微型化（Qs ）和灵敏度。

2. 发明申请

US20080083940A1 Solid-state image pickup device 有权
公开(公告)号：US20080083940A1
公开(公告)日：2008-04-10
申请号：US11978453
申请日：2007-10-29
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L27/146
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

3. 发明授权

US07459735B2 Solid-state image device 有权
标题翻译：固态图像设备
公开(公告)号：US07459735B2
公开(公告)日：2008-12-02
申请号：US11094072
申请日：2005-03-30
申请人： Takayuki Ezaki , Teruo Hirayama , Hideo Kanbe
发明人： Takayuki Ezaki , Teruo Hirayama , Hideo Kanbe
IPC分类号： H01L31/112
CPC分类号： H01L27/14603 , H01L27/14625 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14687 , Y10S257/913
摘要： A solid-state imaging device capable of reducing the occurrence of a dark current and a pixel defect is provided.A solid-state imaging device 10 is formed in which a plurality of photoelectric conversion elements 4 are formed in a semiconductor substrate 1; circuits 5 which read out signal charge from each of the plurality of photoelectric conversion elements 4 are respectively formed on the semiconductor substrate 1; light is applied from the opposite side to the circuits 5 which read out signal charge from each of the plurality of photoelectric conversion elements; and a gettering region is provided in an element-isolation area 2 which separate the photoelectric conversion elements 4 adjacent to each other.
摘要翻译：提供能够减少暗电流和像素缺陷的发生的固态成像装置。在半导体衬底1中形成多个光电转换元件4的固态成像器件10; 从多个光电转换元件4中的每一个读出信号电荷的电路5分别形成在半导体衬底1上; 从与多个光电转换元件中的每一个读出信号电荷的电路5相反地施加光; 并且在分离彼此相邻的光电转换元件4的元件隔离区域2中设置吸杂区域。

4. 发明授权

US07402450B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07402450B2
公开(公告)日：2008-07-22
申请号：US11821715
申请日：2007-06-25
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
摘要翻译：根据本发明的固态图像拾取器件1包括其上形成有由光电二极管3和晶体管构成的像素20的半导体衬底2。包括像素20的晶体管形成在半导体衬底的表面上，在半导体衬底2内部设置形成在光电二极管3的高浓度区域之间的pn结部分，并且光电二极管3的pn结部分的一部分被延伸到形成在半导体衬底2的表面上的晶体管的下部。根据本发明，提供一种固态图像拾取装置，其中像素尺寸可以在不降低饱和电荷量（Qs）和灵敏度的情况下被微型化。

5. 发明授权

US06946747B1 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US06946747B1
公开(公告)日：2005-09-20
申请号：US10385745
申请日：2003-03-12
申请人： Yukari Mori , Takayuki Ezaki , Teruo Hirayama , Naoto Sasaki , Hiroshi Ozaki , Natsuya Ishikawa
发明人： Yukari Mori , Takayuki Ezaki , Teruo Hirayama , Naoto Sasaki , Hiroshi Ozaki , Natsuya Ishikawa
IPC分类号： H01L25/18 , H01L23/48 , H01L23/52 , H01L25/04 , H01L25/065 , H01L27/10 , H01L29/40
CPC分类号： H01L25/0655 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/73207 , H01L2924/15192 , H01L2924/15311 , H01L2924/19107
摘要： A semiconductor device of the MCM type capable of high-speed operation and low power consumption and its manufacturing method are provided. A plurality of semiconductor chips, each having an internal circuit as well as an external connection circuit drawn from the internal circuit, are mounted on the same supporting substrate of this semiconductor device. Semiconductor chips are connected with each other, not by way of the external connection circuits, but directly at a portion between the internal circuits through wiring. This wiring is patterned on an insulating film provided on the supporting substrate and covers the semiconductor chips. Accordingly, through connection holes formed on the insulating film, connection can be established to the internal circuits or the wiring can be formed on the supporting substrate side. If the wiring is formed on the supporting substrate side, the semiconductor chips are to be mounted facing down relative to the supporting substrate.
摘要翻译：提供了能够高速运行和低功耗的MCM型半导体器件及其制造方法。在该半导体装置的同一支撑基板上安装有从内部电路抽出的内部电路以及外部连接电路的多个半导体芯片。半导体芯片彼此连接，而不是通过外部连接电路连接，而是通过布线直接连接在内部电路之间的部分。该布线在设置在支撑基板上的绝缘膜上图案化并覆盖半导体芯片。因此，通过形成在绝缘膜上的连接孔，可以建立与内部电路的连接，或者可以在支撑基板侧上形成布线。如果布线形成在支撑基板侧，则半导体芯片将相对于支撑基板朝下安装。

6. 发明申请

US20070246746A1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US20070246746A1
公开(公告)日：2007-10-25
申请号：US11821715
申请日：2007-06-25
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L27/148
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
摘要翻译：根据本发明的固态图像拾取器件1包括其上形成有由光电二极管3和晶体管构成的像素20的半导体衬底2。包括像素20的晶体管形成在半导体衬底的表面上，在半导体衬底2内部设置形成在光电二极管3的高浓度区域之间的pn结部分，并且光电二极管3的pn结部分的一部分被延伸到形成在半导体衬底2的表面上的晶体管的下部。根据本发明，提供一种固态图像拾取装置，其中像素尺寸可以在不降低饱和电荷量（Qs）和灵敏度的情况下被微型化。

7. 发明申请

US20050167704A1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US20050167704A1
公开(公告)日：2005-08-04
申请号：US11050127
申请日：2005-02-03
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L27/146 , H04N5/335 , H04N5/355 , H04N5/369 , H04N5/374 , H01L27/148
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
摘要翻译：根据本发明的固态图像拾取器件1包括其上形成有由光电二极管3和晶体管构成的像素20的半导体衬底2。包括像素20的晶体管形成在半导体衬底的表面上，在半导体衬底2内部设置形成在光电二极管3的高浓度区域之间的pn结部分，并且光电二极管3的pn结部分的一部分被延伸到形成在半导体衬底2的表面上的晶体管的下部。根据本发明，提供一种固态图像拾取器件，其中像素尺寸可以在不降低饱和电荷量的情况下被微型化（Qs ）和灵敏度。

8. 发明授权

US08445944B2 Solid-state image pickup device 有权
公开(公告)号：US08445944B2
公开(公告)日：2013-05-21
申请号：US13333609
申请日：2011-12-21
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L27/148 , H01L29/768 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L29/4236 , H01L31/02
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.

9. 发明授权

US08088639B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US08088639B2
公开(公告)日：2012-01-03
申请号：US11978453
申请日：2007-10-29
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L21/00 , H01L21/336 , H01L27/148 , H01L29/768 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device includes a semiconductor substrate within which a pixel comprised of a photodiode and a transistor is formed. The transistor is formed at a surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode is provided within the semiconductor substrate and a part of the pn junction portion of the photodiode is extended to a lower portion of the transistor formed at the surface of the semiconductor substrate.
摘要翻译：固态图像拾取器件包括其中形成由光电二极管和晶体管构成的像素的半导体衬底。晶体管形成在半导体衬底的表面，在半导体衬底内设置形成在光电二极管的高浓度区域之间的pn结部分，并且光电二极管的pn结部分的一部分延伸到晶体管的下部形成在半导体基板的表面。

10. 发明授权

US07235826B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07235826B2
公开(公告)日：2007-06-26
申请号：US11050127
申请日：2005-02-03
申请人： Takayuki Ezaki , Teruo Hirayama
发明人： Takayuki Ezaki , Teruo Hirayama
IPC分类号： H01L27/148
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14612 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
摘要翻译：根据本发明的固态图像拾取器件1包括其上形成有由光电二极管3和晶体管构成的像素20的半导体衬底2。包括像素20的晶体管形成在半导体衬底的表面上，在半导体衬底2内部设置形成在光电二极管3的高浓度区域之间的pn结部分，并且光电二极管3的pn结部分的一部分被延伸到形成在半导体衬底2的表面上的晶体管的下部。根据本发明，提供一种固态图像拾取器件，其中像素尺寸可以在不降低饱和电荷量的情况下被微型化（Qs ）和灵敏度。

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