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1. 发明授权

US4957772A Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method 失效
标题翻译：通过微波等离子体化学气相沉积法形成功能性沉积膜的方法
公开(公告)号：US4957772A
公开(公告)日：1990-09-18
申请号：US287666
申请日：1988-12-21
申请人： Keishi Saitoh , Junichiro Hashizume , Shigehira Iida , Tetsuya Takei , Takayoshi Arai
发明人： Keishi Saitoh , Junichiro Hashizume , Shigehira Iida , Tetsuya Takei , Takayoshi Arai
IPC分类号： C23C16/511
CPC分类号： C23C16/511 , Y10S148/045 , Y10S148/065
摘要： An improved method for forming a functional deposited film by introducing a raw material gas into a substantially enclosed reaction chamber containing a substrate onto which the functional deposited film is to be deposited and coupling microwave energy from a source of microwave energy thereinto to thereby form a glow discharge plasma causing decomposition of the raw material gas whereby forming the functional deposited film on the substrate, the improvement comprising supplying microwave of a power equivalent to 1.1 times or more over that of microwave with which the deposition rate for the decomposed products from the raw material gas being deposited onto the substrate to be saturated to the raw material gas in the reaction chamber and regulating the inner pressure of the reaction chamber to a vacuum of 10 m Torr or less.According to the method of this invention, there can be formed a desired functional deposited film having a wealth of many practically applicable characteristics and having an improved response speed against photocurrent at an improved deposition rate with a raw material gas utilization efficiency of hundred percent or nearly hundred percent. And the method of this invention makes it possible to mass-produce various functional elements comprising such deposited film usable in electrophotographic photosensitive member, photosensor, thin-film transistor, solar cell, etc. on an industrial scale thereby enabling low cost production.
摘要翻译：通过将原料气体引入包含要沉积功能性沉积膜的基板的基本封闭的反应室中，并将来自微波能量的微波能量耦合到其中形成发光，从而形成功能沉积膜的改进方法放电等离子体引起原料气体分解，由此在基板上形成功能沉积膜，其改进在于提供微波功率相当于来自原料的分解产物沉积速率的微波的1.1倍或更多倍将沉积在基板上的气体饱和到反应室中的原料气体中，并将反应室的内部压力调节至10mTorr以下的真空。根据本发明的方法，可以形成具有许多实际应用特性的期望的功能性沉积膜，并且在提高的沉积速率下具有改善的光电流响应速度，原料气体利用效率为百分之百或几乎百分之百。并且本发明的方法使得可以在工业规模上大量生产包括可用于电子照相感光构件，光电传感器，薄膜晶体管，太阳能电池等的这种沉积膜的各种功能元件，从而能够实现低成本生产。

2. 发明授权

US4897284A Process for forming a deposited film on each of a plurality of substrates by way of microwave plasma chemical vapor deposition method 失效
标题翻译：通过微波等离子体化学气相沉积法在多个基板上形成沉积膜的工艺
公开(公告)号：US4897284A
公开(公告)日：1990-01-30
申请号：US166553
申请日：1988-03-10
申请人： Takayoshi Arai , Shigehira Iida , Junichiro Hashizume , Tetsuya Takei , Keishi Saitoh
发明人： Takayoshi Arai , Shigehira Iida , Junichiro Hashizume , Tetsuya Takei , Keishi Saitoh
IPC分类号： C23C16/44 , C23C16/24 , C23C16/455 , C23C16/511 , G03G5/08 , G03G5/082 , H01L21/205 , H01L31/0248
CPC分类号： C23C16/24 , C23C16/511 , G03G5/08278
摘要： An improvement in the known MW-PCVD process for forming a deposited film on each of a plurality of cylindrical substrates being so arranged as to surround the discharging space in a substantially enclosed reaction space of a deposition chamber by the glow discharge of raw material gas to generate plasmas containing reactive gaseous materials causing the formation of said deposited film in the discharging space while rotating said plurality of substrates, which comprises providing a gas feed pipe provided with a plurality of gas liberation holes opening into the discharging space in every space between every two of the substrates so as to form an encircled discharging space and an open non-discharging space by said plurality of cylindrical substrates and a plurality of gas feed pipes and regulating the deposit thickness to be deposited per a rotation cycle of the substrate passing through the discharging space and the non-discharging space to a 1000 .ANG. or less.
摘要翻译：用于在多个圆柱形基板中的每一个上形成沉积膜的已知的MW-PCVD工艺的改进被布置成通过原料气体的辉光放电在沉积室的基本封闭的反应空间中包围放电空间，产生包含反应性气体材料的等离子体，导致在排出空间中形成所述沉积膜，同时旋转所述多个基板，其包括提供气体供给管，该气体供给管设置有在每两个空间之间的每个空间中通向排放空间的多个气体释放孔以便通过所述多个圆柱形基底和多个气体供给管形成环绕的排出空间和开放的非排放空间，并且每个循环通过放电的衬底的旋转周期来调节沉积物的沉积厚度空间和不排放空间达到1000安格或以下。

3. 发明授权

US4953498A Microwave plasma CVD apparatus having substrate shielding member 失效
标题翻译：具有基板屏蔽部件的微波等离子体CVD装置
公开(公告)号：US4953498A
公开(公告)日：1990-09-04
申请号：US477123
申请日：1990-02-07
申请人： Junichiro Hashizume , Tetsuya Takei , Shigehira Iida , Keishi Saitoh , Takayoshi Arai
发明人： Junichiro Hashizume , Tetsuya Takei , Shigehira Iida , Keishi Saitoh , Takayoshi Arai
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/511 , G03G5/08 , H01J37/32 , H01L21/205 , H01L31/04
CPC分类号： H01J37/32623 , C23C16/511 , H01J37/32633
摘要： An improved MW-PCVD apparatus, characterized in that in the MW-CVD apparatus having a substrate onto which a deposited film to be formed and a space near the substrate for the decomposition of a raw material gas with the action of microwave energy, a shielding member is provided between said substrate and said space, which has an opening to allow part of the decomposed raw material gas species to be passed toward the substrate.
摘要翻译：一种改进的MW-PCVD装置，其特征在于，在具有基板的MW-CVD装置中，其上形成有沉积膜和在基板附近的空间，用于利用微波能量分解原料气体，屏蔽构件设置在所述基板和所述空间之间，所述空间具有允许部分分解的原料气体种类向基板通过的开口。

4. 发明授权

US4897281A Process for the formation of a functional deposited film by way of microwave plasma CVD method 失效
标题翻译：通过微波等离子体CVD法形成功能沉积膜的工艺
公开(公告)号：US4897281A
公开(公告)日：1990-01-30
申请号：US198746
申请日：1988-05-25
申请人： Takayoshi Arai , Shigehira Iida , Keishi Saitoh , Junichiro Hashizume , Tetsuya Takei
发明人： Takayoshi Arai , Shigehira Iida , Keishi Saitoh , Junichiro Hashizume , Tetsuya Takei
IPC分类号： C23C16/50 , B01J19/12 , C23C16/511 , C23C16/52 , H01J37/32 , H01L21/205 , H01L31/0248
CPC分类号： H01J37/32935 , B01J19/126 , C23C16/511 , H01L21/02425 , H01L21/02532 , H01L21/0262 , B01J2219/0894
摘要： According to the present invention, there is provided an improved process for the formation of a deposited film by way of a microwave plasma CVD method, the improvement comprising monitoring an effective power of a microwave to be introduced into a reaction chamber, leading to a control means an output signal indicative of the effective power corresponding a plasma intensity, and automatically controlling the matching between the reaction chamber and the microwave to be introduced into the reaction chamber according to an output signal from the control means. According to the above process, even after a long discharge time has elapsed, the plasma intensity in the reaction chamber may be maintained constant, and the effective power of the microwave to be introduced into the reaction chamber may be therefore maintained constant. Because of this, it becomes possible to repeatedly and stably prepare a desired deposited film excelling in the uniformity of the thickness and that of the quality at a high deposition rate.
摘要翻译：根据本发明，提供了一种通过微波等离子体CVD法形成沉积膜的改进方法，其改进包括监测要引入反应室的微波的有效功率，从而进行控制表示表示与等离子体强度相对应的有效功率的输出信号，并且根据来自控制装置的输出信号自动控制反应室与微波之间的匹配以引入反应室。根据上述处理，即使经过长时间的放电时间，反应室内的等离子体强度也可以保持恒定，因此可以将导入反应室的微波的有效功率保持恒定。因此，能够以高的沉积速度重复且稳定地制备在厚度均匀性和质量均匀性方面优异的所需沉积膜。

5. 发明授权

US5061511A Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method 失效
标题翻译：通过微波等离子体蒸发沉积方法形成功能性沉积膜的方法
公开(公告)号：US5061511A
公开(公告)日：1991-10-29
申请号：US551081
申请日：1990-07-11
申请人： Keishi Saitoh , Junichiro Hashizume , Shigehira Iida , Tetsuya Takei , Takayoshi Arai
发明人： Keishi Saitoh , Junichiro Hashizume , Shigehira Iida , Tetsuya Takei , Takayoshi Arai
IPC分类号： C23C16/511
CPC分类号： C23C16/511 , Y10S148/045 , Y10S148/065
摘要： An improved method for forming a functional deposited film by introducing a raw material gas into a substantially enclosed reaction chamber containing a substrate onto which the functional deposited film is to be deposited and coupling microwave energy from a source of microwave energy thereinto to thereby form a glow discharge plasma causing decomposition of the raw material gas whereby forming the functional deposited film on the substrate, the improvement comprising supplying microwave of a power equivalent of 1.1 times or more over that of microwave with which the deposition rate for the decomposed products from the raw material gas being deposited onto the substrate to be saturated to the raw material gas in the reaction chamber and regulating the inner pressure of the reaction chamber to a vacuum of 10 m Torr or less.According to the method of this invention, there can be formed a desired functional deposited film having a wealth of many practically applicable characteristics and having an improved response speed against photocurrent at an improved deposition rate with a raw material gas utilization efficiency of hundred percent or nearly hundred percent. And the method of this invention makes it possible to mass-produce various functional elements comprising such deposited film usable in electrophotographic photosensitive member, photosensor, thin-film transistor, solar cell, etc. on an industrial scale thereby enabling low cost production.

6. 发明授权

US4930442A Microwave plasma CVD apparatus having an improved microwave transmissive window 失效
标题翻译：具有改进的微波透射窗的微波等离子体CVD装置
公开(公告)号：US4930442A
公开(公告)日：1990-06-05
申请号：US173605
申请日：1988-03-25
申请人： Shigehira Iida , Takayoshi Arai , Junichiro Hashizume , Tetsuya Takei , Keishi Saitoh
发明人： Shigehira Iida , Takayoshi Arai , Junichiro Hashizume , Tetsuya Takei , Keishi Saitoh
IPC分类号： C23C16/511
CPC分类号： C23C16/511
摘要： An improved microwave plasma CVD apparatus for the formation of a thin film on a substrate by exciting glow discharge in a reaction chamber, comprising a substantially enclosed reaction chamber to receive the substrate, a means for supplying a film forming raw material gas into said reaction chamber and a means for introducing microwave energy into said reaction chamber, characterized in that said means for introducing microwave energy retains the gas atmosphere in said reaction chamber and as well as is constituted by a microwave transmissive material capable of introducing the microwave energy, said material being alumina ceramics containing glassy component such as SiO.sub.2, CaO and MgO in an amount of 1 wt. % to 10 wt. % and substantially as other component .alpha.-alumina.In the improved apparatus, the microwave transmissive window can be repeatedly used without being damaged for a long period of time and a desirable functional deposited film may be mass-produced at a high deposition rate.
摘要翻译：一种改进的微波等离子体CVD装置，用于通过在反应室中激发辉光放电，在基板上形成薄膜，其包括基本上封闭的反应室以接收基板，用于将成膜原料气体供应到所述反应室以及用于将微波能量引入所述反应室的装置，其特征在于，所述用于引入微波能量的装置将气体气氛保持在所述反应室中，并且由能够引入微波能量的微波透射材料构成，所述材料为含有1重量％的SiO 2，CaO和MgO等玻璃状成分的氧化铝陶瓷。％〜10重量％％和基本上作为其它组分α-氧化铝。在改进的装置中，可以重复使用微波透射窗而不会长期损坏，并且可以以高沉积速率大量生产所需的功能沉积膜。

7. 发明授权

US5670286A Electrophotographic light receiving member having an outermost surface with a specific metal element-bearing region and a region substantially free of said metal element which are two-dimensionally distributed 失效
标题翻译：具有特定金属元素承载区域的最外表面和基本上不含所述金属元素的区域的二维分布的电子照相光接收元件
公开(公告)号：US5670286A
公开(公告)日：1997-09-23
申请号：US618302
申请日：1996-03-18
申请人： Tetsuya Takei , Junichiro Hashizume
发明人： Tetsuya Takei , Junichiro Hashizume
IPC分类号： G03G5/08 , G03G5/082 , G03G5/147 , G03G15/04
CPC分类号： G03G5/08214 , G03G5/08221
摘要： An electrophotographic light receiving member having an outermost surface portion comprised of a non-single crystal material, characterized in that a region (a) containing at least a metal element selected from the group consisting of metal elements belonging to groups 13, 14, 15 and 16 of the periodic table and a region (b) substantially not containing said metal element are two-dimensionally distributed at said outermost surface of said light receiving layer. An electrophotographic apparatus provided with said electrophotographic light receiving member and an electrophotographic process using said electrophotographic light receiving member.
摘要翻译：一种电子照相光接收元件，具有由非单晶材料构成的最外表面部分，其特征在于，含有至少含有金属元素的区域（a），所述金属元素选自属于第13,14,15族的金属元素， 16和基本上不含有所述金属元素的区域（b）在所述光接收层的所述最外表面二维分布。提供有所述电子照相光接收元件的电子照相设备和使用所述电子照相光接收元件的电子照相工艺。

8. 发明授权

US07033717B2 Process for producing electrophotographic photosensitive member, and electrophotographic photosensitive member and electrophotographic apparatus making use of the same 失效
标题翻译：用于制造电子照相感光构件的方法和使用其的电子照相感光构件和电子照相设备
公开(公告)号：US07033717B2
公开(公告)日：2006-04-25
申请号：US10630772
申请日：2003-07-31
申请人： Satoshi Kojima , Toshiyuki Ehara , Hideaki Matsuoka , Junichiro Hashizume , Ryuji Okamura , Koji Hitsuishi , Hironori Ohwaki , Kazuto Hosoi
发明人： Satoshi Kojima , Toshiyuki Ehara , Hideaki Matsuoka , Junichiro Hashizume , Ryuji Okamura , Koji Hitsuishi , Hironori Ohwaki , Kazuto Hosoi
IPC分类号： G03G15/04
CPC分类号： G03G5/08221 , G03G5/08278
摘要： An electrophotographic photosensitive member production process is provided having the steps of placing a cylindrical substrate having a conductive surface in a first film-forming chamber, and decomposing a source gas with high-frequency power to deposit on the cylindrical substrate a first layer formed of a non-single-crystal material, taking out of the first film-forming chamber the cylindrical substrate with the first layer deposited thereon, and placing the cylindrical substrate with the first layer deposited thereon in a second film-forming chamber, and decomposing a source gas with a high-frequency power to deposit on the first layer a second layer having an upper-part blocking layer formed of a non-single-crystal material. Even where abnormal growth portions called spherical protuberances are present on the photosensitive member surface, they can be made not to appear on images, and image defects can vastly be remedied.
摘要翻译：提供一种电子照相感光构件制造方法，其具有以下步骤：将具有导电表面的圆柱形基材放置在第一成膜室中，并且以高频电力分解源气体以沉积在圆柱形基板上，形成第一层非单晶材料，从第一成膜室取出其上沉积有第一层的圆柱形基板，并将其上沉积有第一层的圆柱形基板放置在第二成膜室中，并将源气体具有高频功率以在第一层上沉积具有由非单晶材料形成的上部阻挡层的第二层。即使在感光构件表面上存在称为球形隆起物的异常生长部分，也可以使其不会出现在图像上，并且可以大大地补救图像缺陷。

9. 发明授权

US06183930B2 Electrophotographic photosensitive member having surface of non-monocrystalline carbon with controlled wear loss 有权
标题翻译：具有非单晶碳表面的电子照相感光构件具有受控的磨损损失
公开(公告)号：US06183930B2
公开(公告)日：2001-02-06
申请号：US09218632
申请日：1998-12-22
申请人： Shigenori Ueda , Junichiro Hashizume , Makoto Aoki
发明人： Shigenori Ueda , Junichiro Hashizume , Makoto Aoki
IPC分类号： G03G2100
CPC分类号： G03G21/0017 , G03G5/08285 , G03G5/14704
摘要： For stably obtaining high-quality images with good cleaning properties, with neither occurrence of uneven scraping of a surface layer of a light receiving member nor fusion of a toner, and without occurrence of an image defect even without provision of a heater, the wear loss of the surface layer of a non-monocrystalline hydrogenated carbon film is made not less than 1 Å/10,000 sheets nor more than 10 Å/10,000 sheets after completion of copying processes of A4-size transfer sheets, each copying process including developing an image on a light receiving member with a developer having an average grain diameter of 5 to 8 &mgr;m, then transferring the developer image onto a transfer medium, and thereafter scrape-cleaning the surface of the light receiving member with an elastic rubber blade having the hardness of not less than 70 nor more than 80.
摘要翻译：为了稳定地获得具有良好清洁性能的高质量图像，即使没有加热器也不会发生光接收部件的表面层的不均匀刮擦，也不会发生调色剂的熔融，并且即使没有加热器也不会发生图像缺陷，磨损的非单晶氢化碳膜的表面层在A4尺寸转印纸的复印过程完成之后不小于1 / 10,000张，不大于10埃/ 10,000张，每个复印过程包括显影图像具有平均粒径为5〜8μm的显影剂的光接收元件，然后将显影剂图像转印到转印介质上，然后用硬度不高的弹性橡胶刮刀刮擦光接收元件的表面小于70，不超过80。

10. 发明授权

US5849455A Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US5849455A
公开(公告)日：1998-12-15
申请号：US571784
申请日：1995-12-13
申请人： Shigenori Ueda , Junichiro Hashizume , Shinji Tsuchida
发明人： Shigenori Ueda , Junichiro Hashizume , Shinji Tsuchida
IPC分类号： G03G5/08 , C23C16/24 , C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , G03G5/00 , A01K15/04 , A61D3/00 , H05H1/02
CPC分类号： H01J37/32082 , C23C16/509 , C23C16/5093 , G03G5/08214 , G03G5/08278 , H01J37/32706
摘要： A plasma processing method and a plasma processing apparatus are provided in which a deposition film is formed, on a substrate serving also as an electrode, by application of high frequency power ranging from 20 MHz to 450 MHz with simultaneous application of DC voltage ranging from 30 to 300 V or -30 to -300 V and/or AC voltage ranging from 30 to 600 V to the substrate in an evacuatable reaction chamber. This method make it practicable to uniformize the plasma and the film thickness distribution independently of the discharge frequency and the applied high frequency power, thereby broadening the allowable range of conditions of the processing such as film formation and the allowable range of the design of the apparatus.
摘要翻译：提供一种等离子体处理方法和等离子体处理装置，其中通过施加20MHz至450MHz的高频功率，在同时作为电极的基板上形成沉积膜，同时施加30V的直流电压在可抽空的反应室中至300V或-30至-300V和/或AC至30V至600V的电压。该方法使得等离子体的均匀化和膜厚分布与喷射频率和施加的高频功率无关，从而扩大了成膜的处理条件的允许范围和设备的允许范围。

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