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1. 发明授权

US08758971B2 Image-forming method 有权
标题翻译：成像方法
公开(公告)号：US08758971B2
公开(公告)日：2014-06-24
申请号：US13056734
申请日：2009-12-16
申请人： Kazuyoshi Akiyama , Shigenori Ueda , Daisuke Tazawa , Tomohito Ozawa
发明人： Kazuyoshi Akiyama , Shigenori Ueda , Daisuke Tazawa , Tomohito Ozawa
IPC分类号： G03G21/06
CPC分类号： G03G5/14704 , G03G5/08214 , G03G5/08221 , G03G5/08285 , G03G13/045
摘要： An image-forming method uses an electrophotographic photosensitive member having a surface layer formed of a hydrogenated amorphous silicon carbide in which a ratio of the number of carbon atoms to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less, and the sum of the atomic density of the silicon atoms and the atomic density of the carbon atoms in the surface layer is 6.60×1022 atoms/cm3 or more, and the peak wavelength of pre-exposure light is shorter than the peak wavelength of image exposure light.
摘要翻译：图像形成方法使用具有由氢化非晶碳化硅形成的表面层的电子照相感光构件，其中碳原子数与硅原子数与表面中碳原子数之和的比率层为0.61以上且0.75以下，表面层中的硅原子的原子密度和碳原子的原子密度之和为6.60×1022原子/ cm 3以上，曝光光比图像曝光光的峰值波长短。

2. 发明申请

US20120201570A1 ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER AND ELECTROPHOTOGRAPHIC APPARATUS 审中-公开
标题翻译：电子照相感光元件和电子照相设备
公开(公告)号：US20120201570A1
公开(公告)日：2012-08-09
申请号：US13501163
申请日：2010-12-16
申请人： Shigenori Ueda , Satoshi Kojima
发明人： Shigenori Ueda , Satoshi Kojima
IPC分类号： G03G15/00
CPC分类号： G03G5/08235 , G03G5/08214
摘要： The present invention provides an electrophotographic photosensitive member having an a-SiC upper charge injection inhibition layer and an a-SiC surface layer, which is superior in adhesiveness, suppresses the surface deterioration, is superior in sensitivity characteristics and charging characteristics, and can keep an adequate image-forming capability for a long period of time. The upper charge injection inhibition layer contains 10 atom ppm or more and 30,000 atom ppm or less of the Group 13 atoms or the Group 15 atoms of the Periodic Table with respect to silicon atoms in the upper charge injection inhibition layer, and the ratio (C/(Si+C)) of the number of carbon atoms in the upper charge injection inhibition layer with respect to the sum of the number of silicon atoms and the number of the carbon atoms in the upper charge injection inhibition layer is 0.10 or more and 0.60 or less; and the sum of the atom density of the silicon atoms and the atom density of the carbon atoms in the surface layer is 6.60×1022 atoms/cm3 or more, and the ratio (C/(Si+C)) of the number of carbon atoms with respect to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less.
摘要翻译：本发明提供一种电子照相感光构件，其具有优异的粘合性，抑制表面变质的a-SiC上电荷注入抑制层和a-SiC表面层，具有优异的灵敏度特性和充电特性，并且可以保持足够的成像能力长时间。上电荷注入抑制层含有上电荷注入抑制层中相对于硅原子的10原子ppm以上且30,000原子ppm以下的元素周期表中的第13族原子或15族原子，上电荷注入抑制层中的碳原子数相对于上电荷注入抑制层中的硅原子数和碳原子数之和的/（Si + C））为0.10以上， 0.60以下; 并且表面层中的硅原子的原子密度和碳原子的原子密度之和为6.60×1022原子/ cm3以上，碳数为C /（Si + C）的比例相对于硅原子数和表面层中碳原子数之和的原子为0.61以上且0.75以下。

3. 发明授权

US06586149B2 Light-receiving member, image-forming apparatus, and image-forming method 有权
标题翻译：光接收元件，成像设备和图像形成方法
公开(公告)号：US06586149B2
公开(公告)日：2003-07-01
申请号：US09808959
申请日：2001-03-16
申请人： Kunimasa Kawamura , Shigenori Ueda , Toshiyuki Ehara , Junichiro Hashizume , Ryuji Okamura , Masaya Kawada , Tetsuya Karaki , Hironori Ohwaki
发明人： Kunimasa Kawamura , Shigenori Ueda , Toshiyuki Ehara , Junichiro Hashizume , Ryuji Okamura , Masaya Kawada , Tetsuya Karaki , Hironori Ohwaki
IPC分类号： G03G514
CPC分类号： G03G5/10 , G03G5/08221 , G03G5/14 , G03G5/147 , G03G5/14704
摘要： A light-receiving member comprising a conductive substrate, and formed superposingly thereon a photosensitive layer and a surface protective layer in order. The light-receiving member has a surface roughness Ra of from 15 nm to 100 nm. Also disclosed is an image-forming apparatus having such a light-receiving member, and an image-forming method of rendering visible an electrostatic pattern formed on the light-receiving member. The light-receiving member promises stable formation of images over a long period of time.
摘要翻译：一种光接收元件，包括导电基底，并且依次叠加形成感光层和表面保护层。光接收部件的表面粗糙度Ra为15nm〜100nm。还公开了一种具有这种光接收元件的图像形成设备，以及使在光接收元件上形成的静电图案可见的图像形成方法。光接收部件能够长时间稳定地形成图像。

4. 发明授权

US06410102B1 Plasma process method 失效
标题翻译：等离子体工艺方法
公开(公告)号：US06410102B1
公开(公告)日：2002-06-25
申请号：US08874584
申请日：1997-06-13
申请人： Junichiro Hashizume , Shigenori Ueda , Makoto Aoki
发明人： Junichiro Hashizume , Shigenori Ueda , Makoto Aoki
IPC分类号： C23C1456
CPC分类号： H01J37/32082 , C23C16/4405 , C23C16/5093
摘要： A plasma process, which can fabricate a deposition film in short time and at low cost, which can fabricate a deposition film with excellent reproducibility, which can greatly decrease the cleaning time upon cleaning, and which is optimum for fabricating a deposit film, especially a photosensitive member for electrophotography, capable of achieving a high charge potential upon electrification and capable of obtaining clear images with less image defects, is arranged such that a raw-material gas comprising silicon is introduced into a deposition chamber while evacuating the deposition chamber capable of being kept airtight in a vacuum, the raw-material gas is decomposed by high-frequency power in the VHF band, film formation is carried out to form a deposit film on a substrate installed in the deposition chamber, and thereafter cleaning inside the deposition chamber is carried out by etching and removing a deposit film depositing inside the deposition chamber, using a gas containing at least fluorine and using high-frequency power of a frequency lower than the VHF band.
摘要翻译：一种等离子体工艺，其可以在短时间和低成本下制造沉积膜，其可以制造具有优异再现性的沉积膜，这可以大大降低清洁时的清洗时间，并且其最适于制造沉积膜，特别是能够在充电时实现高电荷电位并且能够获得具有较少图像缺陷的清晰图像的电子照相用感光构件被布置成使得包含硅的原料气体被引入沉积室，同时抽真空沉积室在真空中保持气密，原料气体在VHF带中被高频功率分解，进行成膜以在安装在沉积室中的基板上形成沉积膜，然后在沉积室内进行清洗通过蚀刻和去除沉积在沉积室内的沉积膜，使用含有l的气体进行东氟，使用频率低于VHF频段的高频功率。

5. 发明授权

US06406824B1 Electrophotographic photosensitive member and electrophotographic apparatus having the photosensitive member 有权
标题翻译：具有感光构件的电子照相感光构件和电子照相设备
公开(公告)号：US06406824B1
公开(公告)日：2002-06-18
申请号：US09448599
申请日：1999-11-24
申请人： Ryuji Okamura , Shigenori Ueda , Junichiro Hashizume
发明人： Ryuji Okamura , Shigenori Ueda , Junichiro Hashizume
IPC分类号： G03G5147
CPC分类号： G03G5/08278 , G03G5/08235 , G03G5/08285
摘要： As the surface layers of an electrophotographic photosensitive member, a first surface layer which satisfies a condition that a center line average surface roughness (Ra) ranges from 50 Å to 5000 Å and a second surface layer comprising a non-single-crystal carbon containing at least fluorine are laminated in this order. Thus, the generation of a defective image such as the dimness of an image or an image smearing can be suppressed under an environment of high temperature and high humidity without providing any heater even when an electrophotographic apparatus is repeatedly employed. Further, even when a toner of small particle size and excellent in its fixing characteristic is used, a cleaning characteristic can be improved and the fusion of the toner can be suppressed. Still further, even in an electrophotographic process with a frictional force raised for improving the cleaning characteristic, the cleaning characteristic can be improved and the fusion of the toner can be suppressed.
摘要翻译：作为电子照相感光构件的表面层，满足中心线平均表面粗糙度（Ra）为50〜5000的条件的第一表面层和包含含有在第一表面层上的非单晶碳的第二表面层最少氟按顺序层压。因此，即使在重复使用电子照相设备的情况下，也可以在高温高湿的环境下抑制诸如图像昏暗或图像拖尾的缺陷图像的产生，而不需要提供任何加热器。此外，即使使用粒径小，定影特性优异的调色剂，也能够提高清洗特性，能够抑制调色剂的熔融。此外，即使在为提高清洁特性而提高摩擦力的电子照相方法中，也可以提高清洁特性，并且可以抑制调色剂的熔融。

6. 发明授权

US06218064B1 Electrophotographic apparatus and electrophotographic light receiving member 失效
标题翻译：电子照相设备和电子照相光接收元件
公开(公告)号：US06218064B1
公开(公告)日：2001-04-17
申请号：US09449678
申请日：1999-11-24
申请人： Shigenori Ueda , Junichiro Hashizume , Ryuji Okamura
发明人： Shigenori Ueda , Junichiro Hashizume , Ryuji Okamura
IPC分类号： G03G5147
CPC分类号： G03G21/0005 , G03G5/08221 , G03G5/08235 , G03G5/08285 , G03G5/14704
摘要： In an electrophotographic apparatus having a structure for scrape-cleaning a developer of an average particle diameter of 5 to 8 &mgr;m with an elastic rubber blade having a modulus of repulsion elasticity of not less than 10% nor more than 50%, by using a light receiving member having a surface layer comprised of a non-monocrystalline fluorinated carbon film in which the wear loss after copying steps of 10,000 A4-size transfer sheets is not less than 0.1 Å nor more than 100 Å, in which the dynamic hardness is within the range of 10 to 500 kgf/mm2, and in which the fluorine content is not less than 5 atomic % nor more than 50 atomic %, an electrophotographic apparatus is provided which can prevent scattering or fusion of a developer, uneven scraping of a surface layer and image smearing irrespective of the service environment conditions and also can prevent image smearing without provision of means for directly heating the light receiving member.
摘要翻译：在具有刮擦清洁平均粒径为5〜8μm的显影剂的结构的电子照相设备中，使用具有不小于10％且不大于50％的排斥弹性模量的弹性橡胶刮刀，通过使用光接收构件，其具有由非单晶氟化碳膜构成的表面层，其中10,000张A4尺寸转印片的复印步骤之后的磨损量不小于0.1埃不大于100埃，其中动态硬度在范围为10〜500kgf / mm 2，氟含量为5原子％以上且50原子％以下，提供能够防止显影剂的散射或熔融的电子照相设备，表面层的不均匀刮擦和图像涂抹，而不管使用环境条件如何，并且还可以防止图像污染而不提供用于直接加热光接收部件的装置。

7. 发明授权

US5958644A Process to form light-receiving member with outer layer made by alternately forming and etching 失效
标题翻译：通过交替成形和蚀刻形成外层的光接收元件的工艺
公开(公告)号：US5958644A
公开(公告)日：1999-09-28
申请号：US637188
申请日：1996-04-24
申请人： Shigenori Ueda , Junichiro Hashizume , Makoto Aoki , Shinji Tsuchida
发明人： Shigenori Ueda , Junichiro Hashizume , Makoto Aoki , Shinji Tsuchida
IPC分类号： G03G5/08 , C23C16/44 , C23F4/00 , G03G5/082 , H01L21/302 , H01L21/3065 , H01L31/08 , G03G5/00
CPC分类号： C23C16/44 , G03G5/08235 , G03G5/08264 , G03G5/08278
摘要： In a reactor capable of reducing an internal pressure thereof, a non-single-crystalline material layer containing at least one kind of carbon atoms, hydrogen atoms or nitrogen atoms is formed and etched on a non-single-crystalline photoconductive layer mainly composed of silicon atoms, formed on a substrate, under application of a high-frequency power of 50 MHz to 450 MHz, and the formation and the etching are alternately repeated plural times to form a surface layer.A light-receiving member having such a surface layer does not damage cleaning performance over a long period of time, hardly allows adhesion of corona discharge products, and can be free from faint images, smeared images and uneven image density even if no heating means for the drum is provided.
摘要翻译：在能够降低其内部压力的反应器中，形成含有至少一种碳原子，氢原子或氮原子的非单晶材料层，并在主要由硅构成的非单晶光电导层上进行蚀刻原子，在50MHz〜450MHz的高频功率下，在基板上形成，并且形成和蚀刻交替重复多次以形成表面层。具有这种表面层的光接收部件长时间不损坏清洗性能，几乎不能使电晕放电产物附着，并且即使没有加热装置，也不会产生微弱的图像，模糊图像和不均匀的图像浓度提供鼓。

8. 发明授权

US5849446A Light receiving member having a surface protective layer with a specific outermost surface and process for the production thereof 失效
标题翻译：具有具有特定最外表面的表面保护层的光接收元件及其制造方法
公开(公告)号：US5849446A
公开(公告)日：1998-12-15
申请号：US785862
申请日：1997-01-21
申请人： Junichiro Hashizume , Shigenori Ueda , Makoto Aoki
发明人： Junichiro Hashizume , Shigenori Ueda , Makoto Aoki
IPC分类号： G03G5/08 , C23C16/26 , C23C16/56 , G03G5/043 , G03G5/082 , G03G5/147
CPC分类号： C23C16/56 , C23C16/26 , G03G5/0433 , G03G5/08221 , G03G5/08285 , G03G5/14704
摘要： A light receiving member comprising a electrically conductive substrate, a photoconductive layer composed of a non-single crystalline material containing at least silicon atoms as a matrix formed on said substrate by decomposing a silicon-containing raw material gas, and a surface protective layer composed of a non-single crystalline carbon material containing hydrogen formed on said photoconductive layer by decomposing a raw material gas comprising at least a hydrocarbon using a high frequency power with an oscillation frequency of 50 MHz to 450 MHz, wherein a 20 .ANG. or more thick surface side layer region of said surface protective layer composed of said non-single crystalline carbon material is etched at an etching speed of 0.1 to 50 .ANG./sec. by means of a fluorine-containing plasma produced by decomposing a fluorine-containing gas using a high frequency power with an oscillation frequency of 50 MHz to 450 MHz such that said surface protective layer has a thickness of 100 to 10000 .ANG. and has an etched surface deposited with fluorine atoms so as to cover said etched surface. And a process for producing said light receiving member.
摘要翻译：一种光接收元件，包括导电衬底，由至少含有硅原子作为基质的非单晶材料构成的光电导层，其通过分解含硅原料气体而形成在所述衬底上，以及表面保护层由通过使用振荡频率为50MHz至450MHz的高频功率分解至少包含烃的原料气体，在所述光电导层上形成含有氢的非单晶碳材料，其中20或更厚的表面侧以0.1至50安培/秒的蚀刻速度蚀刻由所述非单晶碳材料构成的所述表面保护层的层区域。通过使用振荡频率为50MHz〜450MHz的高频功率分解含氟气体而制成的含氟等离子体，使得所述表面保护层的厚度为100〜10000，具有蚀刻面沉积有氟原子以覆盖所述蚀刻表面。以及用于制造所述光接收元件的工艺。

9. 发明授权

US5718769A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5718769A
公开(公告)日：1998-02-17
申请号：US404496
申请日：1995-03-17
申请人： Junichiro Hashizume , Shigenori Ueda , Shinji Tsuchida
发明人： Junichiro Hashizume , Shigenori Ueda , Shinji Tsuchida
IPC分类号： C23C16/24 , C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/302 , C23C16/00
CPC分类号： H01J37/32082
摘要： In a plasma processing method and apparatus for carrying out plasma processing by supplying a high-frequency power of 20 MHz to 450 MHz to cause discharge to take place between a first electrode serving also as a film forming substrate and a second electrode provided so as to surround the first electrode, the high-frequency power is supplied from its power source to the second electrode at two points at least. In plasma processing apparatuses as typified by plasma CVD apparatuses to which the high-frequency power of a frequency from 20 MHz to 450 MHz is supplied, this method and apparatus can effectively decrease unevenness is plasma processing in the peripheral direction of the film formed, can promise a high plasma processing rate and can improve the characteristics of a deposited film during deposited film formation.
摘要翻译：在通过提供20MHz至450MHz的高频功率进行等离子体处理的等离子体处理方法和装置中，在也用作成膜基板的第一电极和第二电极之间发生放电，围绕第一电极，至少在两点将高频电力从其电源提供给第二电极。在以等离子体CVD装置为代表的等离子体处理装置中，通过提供20MHz〜450MHz频率的高频功率，该方法和装置可以有效地减少不均匀性，是形成膜的周向的等离子体处理承诺了高等离子体处理速度，并且可以在沉积膜形成期间改善沉积膜的特性。

10. 发明授权

US5558719A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5558719A
公开(公告)日：1996-09-24
申请号：US421255
申请日：1995-04-13
申请人： Shinji Tsuchida , Shigenori Ueda , Junichiro Hashizume
发明人： Shinji Tsuchida , Shigenori Ueda , Junichiro Hashizume
IPC分类号： H05H1/46 , C23C16/50 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32541 , H01J37/3255
摘要： A plasma processing apparatus has a cathode electrode surrounding a target film formation base set in a deposition apparatus capable of pressure reduction and arranged parallel to the target film formation base. In the plasma processing apparatus, a plasma is generated between the cathode electrode and the target film formation base by applying an RF power having a discharge frequency of 20 MHz to 450 MHz to the cathode electrode. In the plasma processing apparatus, the cathode electrode is constituted by one metal material portion and at least two dielectric portions arranged at positions to sandwich the metal material portion, and a ratio (L.sub.1 /L.sub.2) of a size (L.sub.1) of the metal material portion of the cathode electrode in an axial direction to a size (L.sub.2) of the target film formation base in the axial direction falls within a range of 0.1 to 0.45. With the plasma processing apparatus, instability and nonuniformity in plasma discharge are prevented to eliminate nonuniformity in film thickness and film quality, and a film having good characteristics is formed on a relatively large target film formation base at a high deposition speed to realize efficiency of productivity and a decrease in cost.
摘要翻译：等离子体处理装置具有围绕设置在能够减压并与靶成膜基底平行布置的沉积设备中的靶成膜基底的阴极电极。在等离子体处理装置中，通过向阴极施加放电频率为20MHz〜450MHz的RF电力，在阴极电极与目标成膜基体之间产生等离子体。在等离子体处理装置中，阴极由一个金属材料部分和至少两个布置在夹着金属材料部分的位置处的电介质部分构成，并且金属材料的尺寸（L1）的比率（L1 / L2）阴极电极在轴向上的距离与目标成膜基材的轴向尺寸（L2）的比例落在0.1〜0.45的范围内。利用等离子体处理装置，可以防止等离子体放电的不稳定性和不均匀性，以消除膜厚度和膜质量的不均匀性，并且在相对大的目标成膜基底上以高沉积速度形成具有良好特性的膜以实现生产率并降低成本。

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