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1. 发明申请

US20130112669A1 HEAT TREATMENT APPARATUS 审中-公开
标题翻译：热处理设备
公开(公告)号：US20130112669A1
公开(公告)日：2013-05-09
申请号：US13354358
申请日：2012-01-20
申请人： Takashi UEMURA , Kenetsu Yokogawa , Masatoshi Miyake , Masaru Izawa , Satoshi Sakai
发明人： Takashi UEMURA , Kenetsu Yokogawa , Masatoshi Miyake , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00
CPC分类号： H01J37/32082
摘要： The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.
摘要翻译：本发明提供一种热处理装置，即使在将待加热的样品加热至1200℃以上的情况下，也能够在保持热效率高的同时降低加工基板的表面粗糙化。本发明是一种对待加热样品进行热处理的热处理装置，其中通过辉光放电产生的等离子体被用作加热源，被加热物被间接加热。

2. 发明授权

US09490104B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US09490104B2
公开(公告)日：2016-11-08
申请号：US13550638
申请日：2012-07-17
申请人： Ken'etsu Yokogawa , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Ken'etsu Yokogawa , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00 , H01J37/32 , H01L21/324 , H01L21/67
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译：加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。

3. 发明申请

US20130112670A1 HEAT TREATMENT APPARATUS 有权
标题翻译：热处理设备
公开(公告)号：US20130112670A1
公开(公告)日：2013-05-09
申请号：US13550638
申请日：2012-07-17
申请人： Ken'etsu YOKOGAWA , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Ken'etsu YOKOGAWA , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译：提供一种热处理装置，其热效率高，即使在1200℃以上的加热条件下，也能够降低被处理基板的表面粗糙度。加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。

4. 发明申请

US20130277354A1 METHOD AND APPARATUS FOR PLASMA HEAT TREATMENT 审中-公开
标题翻译：等离子体热处理的方法和装置
公开(公告)号：US20130277354A1
公开(公告)日：2013-10-24
申请号：US13571730
申请日：2012-08-10
申请人： Masatoshi Miyake , Ken'etsu Yokogawa , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Masatoshi Miyake , Ken'etsu Yokogawa , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： H05H1/48
CPC分类号： H01J37/32522 , H01J37/32724
摘要： There is provided a method for plasma heat treatment that can suppress the degradation of thermal efficiency even in the case where plasma is used to heat a sample at a temperature of 1,200° C. or more. In a method for plasma heat treatment that a sample to be processed is heated by plasma, the method including the steps of: preheating in which a heat treatment chamber is exhausted while preheating an upper electrode and a lower electrode using plasma generated between the upper electrode and the lower electrode; and heat treatment in which the sample to be processed is heated after the preheating step. The upper electrode and the lower electrode are electrodes containing carbon.
摘要翻译：提供了即使在1200℃以上的温度下使用等离子体加热试样的情况下也能够抑制热效率降低的等离子体热处理方法。在等离子体热处理的方法中，待加工的样品被等离子体加热，所述方法包括以下步骤：使用在上电极和下电极之间产生的等离子体预热上热电极和下电极的热处理室被排出的预热和下电极; 以及在预热步骤之后加热被处理样品的热处理。上电极和下电极是含有碳的电极。

5. 发明申请

US20070023398A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070023398A1
公开(公告)日：2007-02-01
申请号：US11355165
申请日：2006-02-16
申请人： Hiroyuki Kobayashi , Masatoshi Miyake , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Masatoshi Miyake , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： B23H7/00 , B23H1/00
CPC分类号： H01J37/32678 , H01J37/32027 , H01J37/32082 , H01J37/32706 , H01J2237/335
摘要： A plasma processing apparatus which can remove foreign particles over an object to be processed during or before/after the discharging is provided. The plasma processing apparatus includes a processing chamber; a processing gas supplying unit for supplying a processing gas into the processing chamber, an antenna electrode for supplying a radio frequency electric power into the processing chamber and forming a plasma, a vacuum evacuating unit for evacuating the inside of the processing chamber; a disposing electrode for disposing the object into the processing chamber and holding the object therein; and a DC power supply for supplying a negative electric potential to the antenna electrode.
摘要翻译：提供一种等离子体处理装置，其可以在放电期间或之后去除待处理物体上的异物。等离子体处理装置包括处理室; 用于将处理气体供给到处理室中的处理气体供给单元，用于向处理室供给射频电力并形成等离子体的天线电极，用于抽出处理室内部的真空排气单元; 设置电极，用于将物体放置在处理室中并将物体保持在其中; 以及用于向天线电极提供负电位的直流电源。

6. 发明授权

US07842619B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07842619B2
公开(公告)日：2010-11-30
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/00
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： A plasma processing method includes etching an insulating film of a sample to be processed using plasma generated from etching gas, supplying a large flow of inert gas from above the sample while having the sample mounted on a sample mounting stage, supplying deposit removal gas to only an area near a side wall of a processing chamber, and controlling a plasma density distribution to thereby vary a plasma density at a center area of the processing chamber and a plasma density at an area near the side wall of the processing chamber so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译：等离子体处理方法包括使用蚀刻气体产生的等离子体对待处理样品的绝缘膜进行蚀刻，同时将样品安装在样品安装台上，从样品安装台提供大量惰性气体，仅向其提供沉积物去除气体处理室的侧壁附近的区域，并且控制等离子体密度分布，从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的等离子体密度，以便执行用于去除沉积在处理室的侧壁上的膜的沉积膜去除工艺。

7. 发明申请

US20100029024A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20100029024A1
公开(公告)日：2010-02-04
申请号：US12202692
申请日：2008-09-02
申请人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Masatoshi Miyake , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/31138 , H01J37/321 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01L21/31116 , Y10S438/905
摘要： The invention provides a plasma processing method capable of reducing the damage applied to the low-k film or the underlayer. The method uses a plasma processing apparatus comprising gas supply means 41, 42 for respectively supplying processing gas independently to a center area of the processing chamber 1 and to an area near the sidewall thereof; a sample mounting electrode 13 for mounting a sample W to be processed; a high frequency power supply 21 for generating plasma; an antenna 11; and a plasma generating means 17 for generating plasma in the processing chamber; the method comprising etching an insulating film on the sample W using plasma; and supplying a large flow of inert gas from the center area of the chamber while having the sample W mounted on the sample mounting electrode 13, supplying deposit removal gas to only the area near the side wall of the processing chamber 1 and controlling the plasma density distribution to thereby vary the plasma density at the center area of the processing chamber and the plasma density at the area near the side wall of the processing chamber, so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.
摘要翻译：本发明提供一种等离子体处理方法，其能够降低对低k膜或底层施加的损伤。该方法使用包括气体供给装置41,42的等离子体处理装置，用于分别独立地向处理室1的中心区域供应处理气体，并且分配到其侧壁附近的区域; 用于安装待处理样品W的样品安装电极13; 用于产生等离子体的高频电源21; 天线11; 以及用于在处理室中产生等离子体的等离子体产生装置17; 该方法包括使用等离子体蚀刻样品W上的绝缘膜; 并且在将样品W安装在样品安装电极13上的同时，从室的中心区域供给大量惰性气体，仅将沉积物去除气体提供给处理室1的侧壁附近的区域，并控制等离子体密度从而改变处理室的中心区域处的等离子体密度和处理室侧壁附近的区域的等离子体密度，从而进行沉积膜去除工艺，以去除沉积在侧壁上的膜处理室。

8. 发明申请

US20110100555A1 Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开
标题翻译：具有降低粒子污染的半导体器件制造装置
公开(公告)号：US20110100555A1
公开(公告)日：2011-05-05
申请号：US12987448
申请日：2011-01-10
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： C23F1/08 , C23C16/455 , C23C16/52 , C23C16/44
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.
摘要翻译：半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为处理。温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。

9. 发明申请

US20090250000A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20090250000A1
公开(公告)日：2009-10-08
申请号：US12193815
申请日：2008-08-19
申请人： Hiroyuki Kobayashi , Kazuyuki Ono , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
发明人： Hiroyuki Kobayashi , Kazuyuki Ono , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： C23C14/00 , F04B49/00
CPC分类号： H01L21/67201 , Y10T137/85986
摘要： A vacuum processing apparatus capable of attaining compatibility between the decrease for the number of foreign particles deposited on a sample in a lock chamber and improvement of the throughput, in which an open speed controllable valve is disposed and the depressurization speed can be controlled automatically by a controlling computer.
摘要翻译：一种真空处理装置，其能够获得在锁定室中沉积在样品上的异物的数量的减少与提高打开速度可控阀的通过量之间的相容性，并且可以通过以下步骤自动控制减压速度控制电脑。

10. 发明申请

US20080277061A1 WAFER EDGE CLEANER 审中-公开
公开(公告)号：US20080277061A1
公开(公告)日：2008-11-13
申请号：US11835463
申请日：2007-08-08
申请人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： H01L21/306 , G06F19/00
CPC分类号： H01L21/02087 , B08B7/0042 , H01L21/67028
摘要： An object of the present invention is to provide a wafer edge cleaner which is capable of removing an undesired material that adheres to an outer periphery of an object to be processed at the low costs and with high throughput. The wafer edge cleaner according to the present invention irradiates a deposited material that has adhered to the rear surface outer periphery of the object to be processed with a laser beam that is at least 30 kW/mm2 in the peak power density.
摘要翻译：本发明的目的是提供一种晶片边缘清洁器，其能够以低成本和高产量去除附着在被处理物体的外周的不需要的材料。根据本发明的晶片边缘清洁器用在其中的至少30kW / mm 2的激光束照射附着在待处理物体的后表面外周的沉积材料峰值功率密度。

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