专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09490104B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US09490104B2
公开(公告)日：2016-11-08
申请号：US13550638
申请日：2012-07-17
申请人： Ken'etsu Yokogawa , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Ken'etsu Yokogawa , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00 , H01J37/32 , H01L21/324 , H01L21/67
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译：加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。

2. 发明申请

US20130112670A1 HEAT TREATMENT APPARATUS 有权
标题翻译：热处理设备
公开(公告)号：US20130112670A1
公开(公告)日：2013-05-09
申请号：US13550638
申请日：2012-07-17
申请人： Ken'etsu YOKOGAWA , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Ken'etsu YOKOGAWA , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译：提供一种热处理装置，其热效率高，即使在1200℃以上的加热条件下，也能够降低被处理基板的表面粗糙度。加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。

3. 发明申请

US20130277354A1 METHOD AND APPARATUS FOR PLASMA HEAT TREATMENT 审中-公开
标题翻译：等离子体热处理的方法和装置
公开(公告)号：US20130277354A1
公开(公告)日：2013-10-24
申请号：US13571730
申请日：2012-08-10
申请人： Masatoshi Miyake , Ken'etsu Yokogawa , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Masatoshi Miyake , Ken'etsu Yokogawa , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： H05H1/48
CPC分类号： H01J37/32522 , H01J37/32724
摘要： There is provided a method for plasma heat treatment that can suppress the degradation of thermal efficiency even in the case where plasma is used to heat a sample at a temperature of 1,200° C. or more. In a method for plasma heat treatment that a sample to be processed is heated by plasma, the method including the steps of: preheating in which a heat treatment chamber is exhausted while preheating an upper electrode and a lower electrode using plasma generated between the upper electrode and the lower electrode; and heat treatment in which the sample to be processed is heated after the preheating step. The upper electrode and the lower electrode are electrodes containing carbon.
摘要翻译：提供了即使在1200℃以上的温度下使用等离子体加热试样的情况下也能够抑制热效率降低的等离子体热处理方法。在等离子体热处理的方法中，待加工的样品被等离子体加热，所述方法包括以下步骤：使用在上电极和下电极之间产生的等离子体预热上热电极和下电极的热处理室被排出的预热和下电极; 以及在预热步骤之后加热被处理样品的热处理。上电极和下电极是含有碳的电极。

4. 发明申请

US20130112669A1 HEAT TREATMENT APPARATUS 审中-公开
标题翻译：热处理设备
公开(公告)号：US20130112669A1
公开(公告)日：2013-05-09
申请号：US13354358
申请日：2012-01-20
申请人： Takashi UEMURA , Kenetsu Yokogawa , Masatoshi Miyake , Masaru Izawa , Satoshi Sakai
发明人： Takashi UEMURA , Kenetsu Yokogawa , Masatoshi Miyake , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00
CPC分类号： H01J37/32082
摘要： The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.
摘要翻译：本发明提供一种热处理装置，即使在将待加热的样品加热至1200℃以上的情况下，也能够在保持热效率高的同时降低加工基板的表面粗糙化。本发明是一种对待加热样品进行热处理的热处理装置，其中通过辉光放电产生的等离子体被用作加热源，被加热物被间接加热。

5. 发明申请

US20080023448A1 Plasma processing apparatus capable of adjusting temperature of sample stand 有权
标题翻译：能够调节样品台温度的等离子体处理装置
公开(公告)号：US20080023448A1
公开(公告)日：2008-01-31
申请号：US11512118
申请日：2006-08-30
申请人： Takumi Tandou , Ken'etsu Yokogawa , Seiichiro Kanno , Masaru Izawa
发明人： Takumi Tandou , Ken'etsu Yokogawa , Seiichiro Kanno , Masaru Izawa
IPC分类号： B23K9/00
CPC分类号： H01L21/67248 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus is provided which processes a sample held on a sample table arranged in a process chamber in a vacuum container by using a plasma formed in the process chamber. The plasma processing apparatus comprises: paths arranged in the sample table in which a coolant is supplied and vaporized as it flows; a refrigeration cycle having the sample table, a compressor, a condenser and an expansion valve connected in that order and having the coolant circulate therein; coolant passages to cause the coolant that has passed through the expansion valve to branch and then merge with a coolant returning from the paths in the sample table toward the compressor; and a regulator to adjust an amount of coolant passing through the paths in the sample table and circulating in the refrigeration cycle and an amount of coolant branching and flowing through the coolant passages.
摘要翻译：提供一种等离子体处理装置，其通过使用在处理室中形成的等离子体处理在真空容器中布置在处理室中的样品台上保持的样品。等离子体处理装置包括：布置在样品台中的通道，其中供应冷却剂并在其流动时蒸发; 具有样品台，压缩机，冷凝器和膨胀阀的制冷循环，其顺序连接并使冷却剂在其中循环; 冷却剂通道使已经通过膨胀阀的冷却剂分支，然后与从样品台中的路径朝向压缩机返回的冷却剂合流; 以及调节器，用于调节通过样品台中的路径并在制冷循环中循环的冷却剂的量以及分配并流过冷却剂通道的冷却剂量。

6. 发明授权

US07838792B2 Plasma processing apparatus capable of adjusting temperature of sample stand 有权
标题翻译：能够调节样品台温度的等离子体处理装置
公开(公告)号：US07838792B2
公开(公告)日：2010-11-23
申请号：US11512118
申请日：2006-08-30
申请人： Takumi Tandou , Ken'etsu Yokogawa , Seiichiro Kanno , Masaru Izawa
发明人： Takumi Tandou , Ken'etsu Yokogawa , Seiichiro Kanno , Masaru Izawa
IPC分类号： B23K9/02 , H05H1/24
CPC分类号： H01L21/67248 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus is provided which processes a sample held on a sample table arranged in a process chamber in a vacuum container by using a plasma formed in the process chamber. The plasma processing apparatus comprises: paths arranged in the sample table in which a coolant is supplied and vaporized as it flows; a refrigeration cycle having the sample table, a compressor, a condenser and an expansion valve connected in that order and having the coolant circulate therein; coolant passages to cause the coolant that has passed through the expansion valve to branch and then merge with a coolant returning from the paths in the sample table toward the compressor; and a regulator to adjust an amount of coolant passing through the paths in the sample table and circulating in the refrigeration cycle and an amount of coolant branching and flowing through the coolant passages.
摘要翻译：提供一种等离子体处理装置，其通过使用在处理室中形成的等离子体处理在真空容器中布置在处理室中的样品台上保持的样品。等离子体处理装置包括：布置在样品台中的通道，其中供应冷却剂并在其流动时蒸发; 具有样品台，压缩机，冷凝器和膨胀阀的制冷循环，其顺序连接并使冷却剂在其中循环; 冷却剂通道使已经通过膨胀阀的冷却剂分支，然后与从样品台中的路径朝向压缩机返回的冷却剂合流; 以及调节器，用于调节通过样品台中的路径并在制冷循环中循环的冷却剂的量以及分配并流过冷却剂通道的冷却剂量。

7. 发明授权

US08034181B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US08034181B2
公开(公告)日：2011-10-11
申请号：US11679979
申请日：2007-02-28
申请人： Takumi Tandou , Ken'etsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Ken'etsu Yokogawa , Masaru Izawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32431 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit.
摘要翻译：等离子体处理装置包括：装在真空容器中的处理室，该真空容器装备有排气装置; 位于所述处理室中并具有上表面的样品台，作为待处理物体的样品在该上表面上; 用于将处理气体供给到处理室中的气体供给单元; 多个制冷剂管道，其布置在样品台的内部，并且液体制冷剂通过该制冷剂流动并且可以蒸发; 包括压缩机，冷凝器，膨胀阀和一组管道的冷却回路，以按顺序连接压缩机，冷凝器和膨胀阀; 以及选择单元，用于在处理的不同步骤中选择性地将制冷剂供给到多个制冷剂管道中。通过使用等离子体处理样品，同时样品台的温度由冷却回路控制。

8. 发明申请

US20080203925A1 PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体加工设备
公开(公告)号：US20080203925A1
公开(公告)日：2008-08-28
申请号：US11679979
申请日：2007-02-28
申请人： Takumi Tandou , Ken'etsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Ken'etsu Yokogawa , Masaru Izawa
IPC分类号： H05H1/00
CPC分类号： H01J37/32431 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit.
摘要翻译：等离子体处理装置包括：装在真空容器中的处理室，该真空容器装备有排气装置; 位于所述处理室中并具有上表面的样品台，作为待处理物体的样品在该上表面上; 用于将处理气体供给到处理室中的气体供给单元; 多个制冷剂管道，其布置在样品台的内部，并且液体制冷剂通过该制冷剂流动并且可以蒸发; 包括压缩机，冷凝器，膨胀阀和一组管道的冷却回路，以按顺序连接压缩机，冷凝器和膨胀阀; 以及选择单元，用于在处理的不同步骤中选择性地将制冷剂供给到多个制冷剂管道中。通过使用等离子体处理样品，同时样品台的温度由冷却回路控制。

9. 发明授权

US06551445B1 Plasma processing system and method for manufacturing a semiconductor device by using the same 失效
标题翻译：等离子体处理系统及其制造方法
公开(公告)号：US06551445B1
公开(公告)日：2003-04-22
申请号：US09665045
申请日：2000-09-19
申请人： Ken'etsu Yokogawa , Yoshinori Momonoi , Nobuyuki Negishi , Masaru Izawa , Shinichi Tachi
发明人： Ken'etsu Yokogawa , Yoshinori Momonoi , Nobuyuki Negishi , Masaru Izawa , Shinichi Tachi
IPC分类号： H05H100
CPC分类号： H01J37/32623 , H01J37/32678
摘要： A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming means are provided so that a the distribution of a direction of a magnetic line of flux on the surface of a planar plate is controlled by a combined magnetic field from the first and second magnetic field-forming means thereby controlling the distribution in degree of the interactions of the magnetic field and an electromagnetic wave. This control ensures the uniformity of a plasma under high density plasma formation conditions, thus enabling one to form a continuous plasma over a wide range of low to high densities. Thus, there can be realized a plasma processing system that ensures processing under wide plasma conditions including high-speed processing under high density conditions.
摘要翻译：平行板ECR等离子体处理系统能够延长能够保持连续，均匀状态的等离子体密度区域。在该系统中，设置由螺线管线圈和第二磁场形成装置形成的第一磁场形成装置，使得平面板表面上的磁通线的方向分布由来自第一和第二磁场形成装置的组合磁场由此控制磁场与电磁波的相互作用程度的分布。该控制确保在高密度等离子体形成条件下的等离子体的均匀性，从而使得能够在宽范围的低至高密度下形成连续的等离子体。因此，可以实现等离子体处理系统，其确保在宽等离子体条件下的处理，包括在高密度条件下的高速处理。

10. 发明申请

US20070023398A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070023398A1
公开(公告)日：2007-02-01
申请号：US11355165
申请日：2006-02-16
申请人： Hiroyuki Kobayashi , Masatoshi Miyake , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Masatoshi Miyake , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： B23H7/00 , B23H1/00
CPC分类号： H01J37/32678 , H01J37/32027 , H01J37/32082 , H01J37/32706 , H01J2237/335
摘要： A plasma processing apparatus which can remove foreign particles over an object to be processed during or before/after the discharging is provided. The plasma processing apparatus includes a processing chamber; a processing gas supplying unit for supplying a processing gas into the processing chamber, an antenna electrode for supplying a radio frequency electric power into the processing chamber and forming a plasma, a vacuum evacuating unit for evacuating the inside of the processing chamber; a disposing electrode for disposing the object into the processing chamber and holding the object therein; and a DC power supply for supplying a negative electric potential to the antenna electrode.
摘要翻译：提供一种等离子体处理装置，其可以在放电期间或之后去除待处理物体上的异物。等离子体处理装置包括处理室; 用于将处理气体供给到处理室中的处理气体供给单元，用于向处理室供给射频电力并形成等离子体的天线电极，用于抽出处理室内部的真空排气单元; 设置电极，用于将物体放置在处理室中并将物体保持在其中; 以及用于向天线电极提供负电位的直流电源。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式