会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • SWITCHING-DEVICE REMAINING LIFETIME DIAGNOSIS METHOD AND APPARATUS
    • 切换设备剩余寿命诊断方法和设备
    • US20120022797A1
    • 2012-01-26
    • US13148817
    • 2009-02-23
    • Akihiko MaruyamaYuko MaruyamaKatsuhiko Horinouchi
    • Akihiko MaruyamaYuko MaruyamaKatsuhiko Horinouchi
    • G01B3/00
    • G05B23/0283G01R31/3274H01H3/001H01H33/6662H01H2071/044
    • There are provided a switching-device remaining lifetime diagnosis method and a switching-device remaining lifetime diagnosis apparatus, wherein as status amount history data, there are accumulated status amounts related to a deterioration status of a switching device, estimated based on measurement data obtained through measurement of performance characteristics of the switching device; based on the accumulated status amount history data, there are created a plurality of system data pieces in which the status amounts are arranged with the respective abscissas of an elapsed time during an operation period of the switching device, the number of operations of the switching device, an inoperative time of the switching device, and an accumulated operation time of the switching device; based on the created system data pieces, the remaining lifetime of the switching device is estimated.
    • 提供了一种开关装置剩余寿命诊断方法和开关装置剩余寿命诊断装置,其中,作为状态量历史数据,存在与基于通过以下方式获得的测量数据估计的与开关装置的劣化状态相关的累积状态量 测量开关装置的性能特征; 基于累积状态量历史数据,创建多个系统数据,其中状态量在切换装置的操作周期期间以经过时间的横坐标排列,切换装置的操作次数 ,切换装置的不工作时间,以及开关装置的累计运行时间; 基于所创建的系统数据,估计开关装置的剩余寿命。
    • 5. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20110140277A1
    • 2011-06-16
    • US13030861
    • 2011-02-18
    • Takashi OKUDAYasuo MorimotoYuko MaruyamaToshio Kumamoto
    • Takashi OKUDAYasuo MorimotoYuko MaruyamaToshio Kumamoto
    • H01L23/522
    • H01L23/5223H01L23/5225H01L2924/0002H01L2924/3011H01L2924/00
    • A semiconductor device includes a semiconductor substrate including a main surface; a plurality of first interconnections formed in a capacitance forming region defined on the main surface and extending in a predetermined direction; a plurality of second interconnections each adjacent to the first interconnection located at an edge of the capacitance forming region, extending in the predetermined direction, and having a fixed potential; and an insulating layer formed on the main surface and filling in between each of the first interconnections and between the first interconnection and the second interconnection adjacent to each other. The first interconnections and the second interconnections are located at substantially equal intervals in a plane parallel to the main surface, and located to align in a direction substantially perpendicular to the predetermined direction.
    • 半导体器件包括:包括主表面的半导体衬底; 多个第一互连形成在形成在主表面上并沿预定方向延伸的电容形成区域中; 多个第二互连,每个相邻于位于电容形成区域的边缘处的第一互连,沿预定方向延伸并具有固定电位; 以及绝缘层,形成在主表面上,并且填充在每个第一互连之间以及第一互连和第二互连之间相邻。 第一互连和第二互连在平行于主表面的平面中以基本相等的间隔定位,并且被定位成在基本上垂直于预定方向的方向上对齐。