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    • 4. 发明申请
    • SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    • 固态成像装置,其制造方法和电子装置
    • US20110241080A1
    • 2011-10-06
    • US13070624
    • 2011-03-24
    • Shinya Yamakawa
    • Shinya Yamakawa
    • H01L27/148H01L31/18
    • H01L27/14616H01L27/14614H01L27/14643H01L27/14689
    • Disclosed herein is a solid-state imaging device, including a plurality of unit pixels, wherein the plurality of unit pixels include: a photoelectric conversion element; a first transfer gate; a charge retaining region; a second transfer gate; and a floating diffusion region; a boundary part between the photoelectric conversion element and the charge retaining region having a structure of an overflow path formed at a potential determining a predetermined amount of charge, the overflow path transferring a charge by which the predetermined amount of charge is exceeded as a signal charge from the photoelectric conversion element to the charge retaining region, and the first transfer gate having two electrodes with different work functions as gate electrodes arranged above the overflow path and above the charge retaining region, respectively.
    • 本文公开了一种固态成像装置,包括多个单位像素,其中多个单位像素包括:光电转换元件; 第一传输门; 电荷保持区域; 第二传输门; 和浮动扩散区; 在光电转换元件和电荷保持区域之间的边界部分,其具有形成在确定预定量的电荷的电位的溢出路径的结构,溢出路径传送超过预定量的电荷的电荷作为信号电荷 从光电转换元件到电荷保持区域,并且第一传输门具有分别具有布置在溢流路径上方和电荷保持区上方的具有不同功函数的两个电极作为栅电极。
    • 6. 发明申请
    • Active matrix substrate, method of making the substrate, and display device
    • 有源矩阵基板,制造基板的方法和显示装置
    • US20110003417A1
    • 2011-01-06
    • US12807215
    • 2010-08-31
    • Yoshihiro OkadaYuichi SaitoShinya YamakawaAtsushi BanMasaya OkamotoHiroyuki Ohgami
    • Yoshihiro OkadaYuichi SaitoShinya YamakawaAtsushi BanMasaya OkamotoHiroyuki Ohgami
    • H01L21/336H01L33/02
    • H01L29/78603G02F1/1362H01L27/124H01L27/1288H01L29/66765
    • An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.
    • 有源矩阵基板包括基底,栅线,数据线,薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线与绝缘膜相交,跨越所有栅极线。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联,并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联,并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉,而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。
    • 9. 发明授权
    • Active matrix substrate, method of making the substrate, and display device
    • 有源矩阵基板,制造基板的方法和显示装置
    • US07459723B2
    • 2008-12-02
    • US11450810
    • 2006-06-08
    • Yoshihiro OkadaYuichi SaitoShinya YamakawaAtsushi BanMasaya OkamotoHiroyuki Ohgami
    • Yoshihiro OkadaYuichi SaitoShinya YamakawaAtsushi BanMasaya OkamotoHiroyuki Ohgami
    • H01L29/04H01L31/036H01L31/0376H01L31/20
    • H01L29/78603G02F1/1362H01L27/124H01L27/1288H01L29/66765
    • An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.
    • 有源矩阵基板包括基底,栅线,数据线,薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线都插入绝缘膜,与所有栅极线交叉。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联,并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联,并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉,而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。