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    • 5. 发明授权
    • Surface elastic wave device
    • 表面弹性波装置
    • US4689586A
    • 1987-08-25
    • US869979
    • 1986-06-02
    • Jun YamadaAkitsuna YuharaTakashi ShibaYuji Fujita
    • Jun YamadaAkitsuna YuharaTakashi ShibaYuji Fujita
    • H03H9/02H03H9/145H03H9/42
    • H03H9/14505
    • A surface acoustic wave (SAW) device comprises a piezo-electric surface acoustic substrate, and plural sets of input/output interdigital electrodes disposed on the substrate. A phase shifter is provided between a sending electrode and a reflecting electrode included in the input or output interdigital electrodes for producing an electrical phase difference to implement a unidirectional electrode. The sending electrode and the reflecting electrode are mutually connected through the phase shifter including two pure reactance elements serially connected between the sending and the reflecting electrodes and a pure reactance element connected to the junction between the two serially connected reactance elements so as to form a T-circuit. When the two serially connected pure reactance elements are selected equal to each other, the operating frequency band is broadened. The phase shifter includes no ohmic resistance and thus is lossless.
    • 表面声波(SAW)器件包括压电表面声学衬底和设置在衬底上的多组输入/输出叉指电极。 在发送电极和包括在输入或输出叉指电极中的反射电极之间提供移相器,用于产生电相差以实现单向电极。 发送电极和反射电极通过移相器相互连接,该移相器包括串联连接在发送电极和反射电极之间的两个纯电抗元件和连接到两个串联的电抗元件之间的接点的纯电抗元件,从而形成T 电路 当选择两个串联的纯电抗元件彼此相等时,工作频带变宽。 移相器不包含欧姆电阻,因此无损耗。
    • 9. 发明授权
    • Method and apparatus for preparing crystal thin films by using a surface
acoustic wave
    • 通过使用表面声波制备晶体薄膜的方法和装置
    • US5837332A
    • 1998-11-17
    • US690030
    • 1996-07-31
    • Migaku TakahashiKatsuya YokoyamaJun YamadaTakashi Shiba
    • Migaku TakahashiKatsuya YokoyamaJun YamadaTakashi Shiba
    • C23C14/22C23C16/44G11B5/012G11B5/31G11B5/84G11B5/85G11B5/851H01F41/30H01L39/24B06B1/00H03H9/00
    • B82Y25/00B82Y40/00C23C14/22C23C16/4415G11B5/012G11B5/3163G11B5/8404G11B5/85G11B5/851H01F41/302H01L39/2496
    • A method and apparatus for preparing thin films, a device, an electronic and magnetic apparatus, an information recording and reproducing apparatus, an information processing apparatus and a crystal preparing method from the molten state. A thin film is prepared as the substrate or the surface of the substrate is being excited and characterized by a device having at least a substrate and a thin film with at least one layer prepared thereon and an electronic and magnetic apparatus having integration of the devices, wherein at least one layer of the thin film is prepared as the surface of the substrate is being excited. The recording and reproducing apparatus for recording and reproducing information is composed of an information memory medium device having a recording layer of the thin film prepared as the surface of the substrate is being excited and a recording head whose core is prepared as the surface of the substrate is being excited. An information processing apparatus for use in input, record, process and output of information is composed of an information memory medium device having a recording layer which is prepared as the surface of the substrate is being excited and a processing part having a semiconductor device with a thin film prepared as the surface of the substrate is being excited.
    • 一种从熔融状态制备薄膜的方法和装置,装置,电子和磁性装置,信息记录和再现装置,信息处理装置和晶体制备方法。 制备薄膜作为衬底或者衬底的表面被激发并且通过具有至少一个衬底的薄膜和其上制备有至少一层的薄膜和具有这些器件集成的电子和磁性设备被激发并表征, 其中当衬底的表面被激发时,制备至少一层薄膜。 用于记录和再现信息的记录和再现装置由一个信息存储介质装置组成,该信息存储介质装置具有被激励的衬底表面所制备的薄膜的记录层,以及一个记录头,其芯准备为衬底的表面 正在兴奋 用于信息的输入,记录,处理和输出的信息处理装置由具有记录层的信息存储介质装置组成,该记录层是在被激励的基板的表面上准备的,并且具有半导体装置的处理部分具有 作为衬底表面制备的薄膜正在被激发。
    • 10. 发明授权
    • Surface acoustic wave resonator
    • 表面声波谐振器
    • US4760359A
    • 1988-07-26
    • US763
    • 1987-01-06
    • Takashi ShibaNorio HosakaTakemitsu BumaJun Yamada
    • Takashi ShibaNorio HosakaTakemitsu BumaJun Yamada
    • H03H9/02H03H9/25
    • H03H9/0285H03H9/25
    • A surface acoustic wave resonator has two solid-type interdigital transducers and two grating reflectors arranged on a piezoelectric substrate or on a surface acoustic wave substrate which contains a piezoelectric material and the reflectors are arranged outside these transducers. If the electrode pitch of the interdigital transducers is suitably different from the pitch of grating of the reflectors, ripples caused by the triple transit echo at frequencies other than the peak frequency are deviated so as to lie outside the stop band of the reflectors, so that spurious responses are suppressed. In this case, the number of electrode pairs Ni of the interdigital transducers should satisfy a relation, Ni.gtoreq..pi./.epsilon., wherein .epsilon. denotes a characteristic mechanical impedance mismatch contribution on the surface of the electrode and on the free surface in the interdigital transducers, so that a peak caused by the trapping of energy in the interdigital transducers is brought into agreement with a peak caused by the triple transit echo to decrease the losses and to increase the Q value.
    • 表面声波谐振器具有两个固体型叉指式换能器和布置在压电基片上的两个光栅反射器或包含压电材料的表面声波基片,反射器设置在这些换能器之外。 如果叉指式换能器的电极间距适当地不同于反射器的光栅的间距,则在峰值频率以外的频率处由三次转接回波引起的波纹偏离,以便位于反射器的阻带之外,使得 杂散响应被抑制。 在这种情况下,叉指式换能器的电极对Ni的数量应满足关系式,其中,ε表示在电极表面上和叉指中的自由表面上的特征性机械阻抗失配贡献 换能器,使得由叉指式换能器中的能量捕获引起的峰值与由三通道回波引起的峰值相一致,以减少损耗并增加Q值。