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1. 发明授权

US09939494B2 Battery system and method of determining polarization of secondary battery 有权
公开(公告)号：US09939494B2
公开(公告)日：2018-04-10
申请号：US14400960
申请日：2012-05-15
申请人： Takashi Ogura
发明人： Takashi Ogura
IPC分类号： H02J7/00 , G01R31/36 , H01M10/48
CPC分类号： G01R31/3627 , G01R31/3648 , H01M10/48 , H01M2220/20
摘要： A concentration distribution in an active material of a battery unit is calculated by using a diffusion equation, and a first polarization elimination time taken for the concentration distribution in the active material to fall within an allowable range is calculated assuming that charge and discharge of the battery unit is not performed. A concentration distribution in an electrolyte of the battery unit is calculated by using a diffusion equation, and a second polarization elimination time taken for the concentration distribution in the electrolyte to fall within an allowable range is calculated assuming that the charge and the discharge of the battery unit is not performed. It is determined that polarization of the battery unit is eliminated when a time for which the charge and the discharge of the battery unit is not performed is longer than the longer one of the first polarization elimination time and the second polarization elimination time.

2. 发明授权

US09131292B2 Wireless microphone system 有权
标题翻译：无线麦克风系统
公开(公告)号：US09131292B2
公开(公告)日：2015-09-08
申请号：US13992653
申请日：2011-12-09
申请人： Ken'ichi Ejima , Takashi Ogura , Koji Moriguchi
发明人： Ken'ichi Ejima , Takashi Ogura , Koji Moriguchi
IPC分类号： H04R3/00 , H04L9/00 , H04R1/08
CPC分类号： H04R3/00 , H04L9/00 , H04L63/0428 , H04R1/08 , H04R2420/07 , H04W12/02
摘要： Provided is a wireless microphone system comprising a microphone and a wireless receiver, wherein the wireless microphone system is provided with: a normal communication mode in which communication is performed by using a normal unique word (UWN) preset in both the microphone and the wireless receiver devices; a confidential setting mode in which a confidential unique word (UWX) is transmitted without being set in either of said devices; and a confidential communication mode in which communication is performed by both said devices by using the confidential unique word (UWX) set by the confidential setting mode.
摘要翻译：提供了一种包括麦克风和无线接收器的无线麦克风系统，其中无线麦克风系统被提供有：正常通信模式，其中通过使用在麦克风和无线接收机中预设的普通唯一字（UWN）来执行通信设备; 保密设置模式，其中在不在所述设备中的任一个中发送机密唯一字（UWX）; 以及通过使用通过机密设置模式设置的机密唯一字（UWX）由两个所述设备进行通信的机密通信模式。

3. 发明授权

US08455925B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08455925B2
公开(公告)日：2013-06-04
申请号：US13024004
申请日：2011-02-09
申请人： Masashige Moritoki , Takamasa Itou , Takashi Ogura , Tsutomu Himukai , Shigeaki Shimizu
发明人： Masashige Moritoki , Takamasa Itou , Takashi Ogura , Tsutomu Himukai , Shigeaki Shimizu
IPC分类号： H01L23/52
CPC分类号： H01L21/76895 , H01L27/10811 , H01L27/10814 , H01L27/10885 , H01L27/10894
摘要： To provide a structure of a semiconductor device that realizes an increase in a capacitor capacitance of a memory circuit to the maximum while inhibiting an increase in a contact resistance of a logic circuit, and a manufacture method thereof. When designating the number of layers of the local interconnect layers having wiring that makes up a logic circuit area as M and designating the number of layers of the local interconnect layers having wiring that makes up the memory circuit as N (M and N are natural numbers and satisfy M>N), capacitance elements are provided over the interconnect layers comprised of (M−N) layers or (M−N+1) layers.
摘要翻译：为了提供一种在抑制逻辑电路的接触电阻的增加的同时最大限度地实现存储电路的电容器电容的增加的半导体器件的结构及其制造方法。当将具有构成逻辑电路区域的布线的局部互连层的层数指定为M并且指定具有构成存储器电路的布线的局部互连层的层数为N（M和N为自然数并且满足M> N），在由（MN）层或（M-N + 1）层组成的互连层上提供电容元件。

4. 发明申请

US20120314837A1 RADIATION TRANSMISSION TYPE TARGET 有权
标题翻译：辐射传输类型目标
公开(公告)号：US20120314837A1
公开(公告)日：2012-12-13
申请号：US13469792
申请日：2012-05-11
申请人： Osamu Tsujii , Noriaki Oguri , Takashi Ogura
发明人： Osamu Tsujii , Noriaki Oguri , Takashi Ogura
IPC分类号： H01J35/08 , G01N23/04
CPC分类号： H01J35/18 , H01J35/08 , H01J2235/081 , H01J2235/087 , H01J2235/183
摘要： A radiation transmission type target to be used for a radiation tube has a target metal 12 placed on a substrate 13, and has an antistatic member 14 placed on a surface of the substrate 13 opposite to a surface on which the target metal 12 is placed. The target suppresses its electrostatic charge, and enables the radiation tube to stable operate.
摘要翻译：用于辐射管的辐射透射型靶具有放置在基板13上的目标金属12，并且具有放置在基板13的与放置目标金属12的表面相反的表面上的抗静电部件14。目标抑制其静电电荷，使辐射管稳定运行。

5. 发明授权

US08108408B2 Image recognition device and image recognition method 有权
标题翻译：图像识别装置和图像识别方法
公开(公告)号：US08108408B2
公开(公告)日：2012-01-31
申请号：US12521891
申请日：2008-06-12
申请人： Satoshi Kondo , Aki Yoneda , Ko Mizuno , Takashi Ogura
发明人： Satoshi Kondo , Aki Yoneda , Ko Mizuno , Takashi Ogura
IPC分类号： G06F7/00
CPC分类号： G06F17/30256 , G06K9/00684
摘要： An image recognition device includes: an image input unit obtaining an input image corresponding to a target image to be recognized; a similar image search unit searching out at least one similar image similar to the target image obtained by the image input unit from among images generated independently of the image recognition device, and unintentionally obtained; a keyword extraction unit extracting a plurality of keywords corresponding to candidates for a recognition result of the target image; a keyword analysis unit determining at least one likely keyword likely to be the recognition result of the target image from among the plurality of keywords extracted by the keyword extraction unit by analyzing the plurality of keywords; and a presentation unit outputting at least one likely keyword determined by the keyword analysis unit, as the recognition result of the target image.
摘要翻译：图像识别装置包括：图像输入单元，获得与要识别的目标图像相对应的输入图像; 类似的图像搜索单元，从独立于图像识别装置生成的图像中搜索类似于由图像输入单元获得的目标图像的至少一个类似图像，并且无意地获得; 关键词提取单元，提取与所述目标图像的识别结果的候选对应的多个关键字; 关键字分析单元，通过分析所述多个关键字，从所述关键词提取单元提取的所述多个关键字中确定可能是所述目标图像的识别结果的至少一个可能关键字; 以及表示单元，输出由关键词分析单元确定的至少一个可能关键字作为目标图像的识别结果。

6. 发明申请

US20110152691A1 ULTRASONIC TRANSDUCER 有权
标题翻译：超声波传感器
公开(公告)号：US20110152691A1
公开(公告)日：2011-06-23
申请号：US13060704
申请日：2010-06-04
申请人： Masako Ikeda , Takashi Ogura
发明人： Masako Ikeda , Takashi Ogura
IPC分类号： A61B8/14 , B29C39/12 , B29C47/00
CPC分类号： B06B1/0677 , A61B8/00 , A61B8/4405 , A61B8/4455 , G01N29/0672 , G10K11/002
摘要： An ultrasonic transducer includes: a piezoelectric transducer (1) emitting ultrasonic waves; and a backing layer (4) provided in contact with a back side of the piezoelectric transducer (1) and attenuating ultrasonic waves that are emitted toward the back side of the piezoelectric transducer (1) and have an opposite phase to the phase of ultrasonic waves emitted toward a front side of the piezoelectric transducer (1). The acoustic tubes (5) are disposed in the backing layer (4) such that a longitudinal direction of each acoustic tube (5) is in line with a traveling direction of the ultrasonic waves emitted by the piezoelectric transducer (1) toward the front and the back side. The acoustic tubes (5) have mutually different lengths on the basis of a principle of an acoustic wave synthesis, and attenuate in whole or in part the ultrasonic waves emitted by the piezoelectric transducer (1) toward the backing layer (4).
摘要翻译：超声换能器包括：发射超声波的压电换能器（1）以及设置成与所述压电换能器（1）的背面接触并且衰减朝向所述压电换能器（1）的背侧发射并且与超声波的相位相反的超声波的背衬层（4）朝向压电换能器（1）的前侧发射。声管（5）设置在背衬层（4）中，使得每个声管（5）的纵向方向与压电换能器（1）朝向前方发射的超声波的行进方向一致，以及背面。声管（5）基于声波合成的原理具有相互不同的长度，并且将压电换能器（1）发射的超声波全部或部分衰减到背衬层（4）。

7. 发明授权

US07947568B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07947568B2
公开(公告)日：2011-05-24
申请号：US12548471
申请日：2009-08-27
申请人： Keiji Sakamoto , Takashi Ogura , Masashige Moritoki
发明人： Keiji Sakamoto , Takashi Ogura , Masashige Moritoki
IPC分类号： H01L21/76
CPC分类号： H01L21/76232
摘要： A method of manufacturing a semiconductor device includes a process of forming a STI trench in a substrate, a process of forming a thermal oxide film on a sidewall and a bottom surface of the STI trench, a process of performing a plasma treatment on a surface of the thermal oxide film that is located at a bottom portion of the STI trench, and a process of forming an insulating film in the STI trench using a CVD method.
摘要翻译：制造半导体器件的方法包括在衬底中形成STI沟槽的工艺，在STI沟槽的侧壁和底表面上形成热氧化膜的工艺，在表面上进行等离子体处理的工艺位于STI沟槽的底部的热氧化膜，以及使用CVD法在STI沟槽中形成绝缘膜的工序。

8. 发明授权

US07432590B2 Ceramic package, assembled substrate, and manufacturing method therefor 失效
标题翻译：陶瓷封装，组装衬底及其制造方法
公开(公告)号：US07432590B2
公开(公告)日：2008-10-07
申请号：US11198135
申请日：2005-08-08
申请人： Natsuyo Nagano , Takashi Ogura , Masanori Hongo , Masami Fukuyama
发明人： Natsuyo Nagano , Takashi Ogura , Masanori Hongo , Masami Fukuyama
IPC分类号： H01L23/12 , H01L23/48
CPC分类号： H01L21/50 , H01L21/4807 , H01L23/13 , H01L24/48 , H01L24/73 , H01L2224/16225 , H01L2224/16235 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/15153 , H01L2924/1517 , H01L2924/15787 , H01L2924/16152 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In a ceramic package including one or more ceramic layers and being capable of having an electronic component and a lid fixed to a surface thereof, a surface of a ceramic layer having a sealing electrode for joining the lid through a sealing member and a pad to be connected to input and output electrodes and/or a ground electrode of the electronic component is divided into an inner portion having the pad and an outer portion having the sealing electrode with a stepped side wall as a border for preventing the sealing member from flowing, and one of the inner portion and the outer portion projects relative to the other.
摘要翻译：在包括一个或多个陶瓷层并且能够将电子部件和固定在其表面上的盖的陶瓷封装中的陶瓷层的表面上，具有密封电极的表面，所述密封电极用于通过密封构件和垫将盖接合，连接到电子部件的输入和输出电极和/或接地电极被分成具有焊盘的内部部分和具有密封电极的外部部分，其具有阶梯状侧壁作为防止密封部件流动的边界，以及内部部分和外部部分中的一个相对于另一个突出。

9. 发明申请

US20080203500A1 Semiconductor device and production method therefor 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080203500A1
公开(公告)日：2008-08-28
申请号：US12071126
申请日：2008-02-15
申请人： Takashi Ogura , Nobuyuki Ikarashi , Toshiyuki Iwamoto , Hirohito Watanabe
发明人： Takashi Ogura , Nobuyuki Ikarashi , Toshiyuki Iwamoto , Hirohito Watanabe
IPC分类号： H01L29/78
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28211 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/6656 , H01L29/78
摘要： A semiconductor device provided with a MIS type field effect transistor comprising a silicon substrate, a gate insulating film having a high-dielectric-constant metal oxide film which is formed on the silicon substrate via a silicon containing insulating film, a silicon-containing gate electrode formed on the gate insulating film, and a sidewall including, as a constituting material, silicon oxide on a lateral face side of the gate electrode, wherein a silicon nitride film is interposed between the sidewall and at least the lateral face of the gate electrode. This semiconductor device, although having a fine structure with a small gate length, is capable of low power consumption and fast operation.
摘要翻译：一种设置有MIS型场效应晶体管的半导体器件，包括硅衬底，具有通过含硅绝缘膜形成在硅衬底上的高介电常数金属氧化物膜的栅极绝缘膜，含硅栅电极形成在所述栅极绝缘膜上的侧壁，以及在所述栅电极的侧面上包含氧化硅作为构成材料的侧壁，其中，所述侧壁与所述栅电极的至少所述侧面之间插入有氮化硅膜。该半导体器件尽管具有栅极长度小的精细结构，但能够实现低功耗和快速操作。

10. 发明申请

US20080048315A1 Electronic Device and Package Used for the Same 审中-公开
标题翻译：用于其的电子设备和包装
公开(公告)号：US20080048315A1
公开(公告)日：2008-02-28
申请号：US11664108
申请日：2005-09-08
申请人： Natsuyo Nagano , Takashi Ogura
发明人： Natsuyo Nagano , Takashi Ogura
IPC分类号： H03H9/05 , H01L23/15
CPC分类号： H03H9/0576 , H01L24/06 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/48091 , H01L2924/16195 , H01L2924/181 , H03H9/0571 , H03H9/706 , H03H9/72 , H03H9/725 , H01L2924/00014 , H01L2924/00
摘要： [PROBLEM ] To provide a laminate ceramic electronic device applicable to two types of design specifications by using a common package. [SOLUTION A laminate ceramic electronic device of the present invention has filter chips 2, 3 for transmission and reception mounted therein. A wiring pattern 7, which connects an input terminal A of the transmission filter chip 2 with a transmission side signal terminal Tx in a first arrangement, has two branch wiring portions 72, 73 extending from the transmission side signal terminal Tx toward the input terminal A of the transmission filter chip 2 in the first arrangement and toward an output terminal D of the reception filter chip 3 in a second arrangement. A wiring pattern 8, which connects the output terminal D of the reception filter chip 3 with a reception side signal terminal Rx in the first arrangement, has two branch wiring portions 82, 83 extending from the reception side signal terminal Rx toward the output terminal D of the reception filter chip 3 in the first arrangement and toward the input terminal A of the transmission filter chip 2 in the second arrangement.
摘要翻译： [问题]通过使用通用包装提供适用于两种设计规格的层压陶瓷电子设备。 [解决方案]本发明的层叠陶瓷电子器件具有安装在其中的用于发送和接收的滤波器芯片2,3。将发送滤波器芯片2的输入端子A与第一配置的发送侧信号端子Tx连接的布线图案7具有从发送侧信号端子Tx朝向输入端子A延伸的两个支路布线部72,73 的第一布置中的发送滤波器芯片2，并且在第二布置中朝向接收滤波器芯片3的输出端子D。将接收滤波器芯片3的输出端D与第一配置中的接收侧信号端子Rx连接的布线图案8具有从接收侧信号端子Rx朝向输出端子D延伸的两个分支布线部82,83 的第一布置中的接收滤波器芯片3，并且在第二布置中朝向发送滤波器芯片2的输入端子A.

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