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1. 发明授权

US4625212A Double loop antenna for use in connection to a miniature radio receiver 失效
标题翻译：用于连接微型无线电接收机的双环天线
公开(公告)号：US4625212A
公开(公告)日：1986-11-25
申请号：US590617
申请日：1984-03-19
申请人： Takashi Oda , Koji Yamasaki
发明人： Takashi Oda , Koji Yamasaki
IPC分类号： H01Q7/00 , H01Q1/24 , H01Q1/27
CPC分类号： H01Q7/005 , H01Q1/243 , H01Q1/273
摘要： An antenna having an antenna aperture area and an antenna reactance comprises a first antenna element (31) defining a first aperture area and a first reactance and a second antenna element (32) connected in parallel to the first antenna element to put a miniature radio receiver into operation in a desired frequency band. The second antenna element has a second aperture area and a second reactance greater than the first aperture area and reactance, respectively, so that the antenna aperture area and reactance are substantially determined by the second aperture area and the first reactance, respectively. The first and the second aperture areas may be coplanar. Alternatively, the aperture areas may be orthogonal to each other.
摘要翻译：具有天线孔径区域和天线电抗的天线包括限定第一开口区域和第一电抗的第一天线元件（31）和与第一天线元件并联连接的第二天线元件（32），以将微型无线电接收器在期望的频带中进行操作。第二天线元件分别具有大于第一开口面积和电抗的第二开口面积和第二电抗，使得天线孔径面积和电抗分别基本上由第二开口面积和第一电抗决定。第一和第二开口区域可以是共面的。或者，孔径区域可以彼此正交。

2. 发明授权

US09636490B2 Microneedle 有权
公开(公告)号：US09636490B2
公开(公告)日：2017-05-02
申请号：US13881322
申请日：2011-10-24
申请人： Koichi Masaoka , Keizo Ikari , Takashi Oda , Katsunori Kobayashi , Hidetoshi Hamamoto , Masaki Ishibashi , Kiyotsuna Toyohara
发明人： Koichi Masaoka , Keizo Ikari , Takashi Oda , Katsunori Kobayashi , Hidetoshi Hamamoto , Masaki Ishibashi , Kiyotsuna Toyohara
IPC分类号： A61M5/00 , A61M37/00
CPC分类号： A61M37/0015 , A61M2037/0023 , A61M2037/0053 , A61M2037/0061
摘要： A microneedle and a microneedle array, which have both aspects of safety and easiness to use and can administer a predetermined dose of a medical agent without causing a pain by smoothly running into the skin surface layer of a patient, includes a frustum and a forward end portion thereon, the forward end portion having a forward end apex angle in the range of 15 to 60° and a forward end diameter in the range of 1 to 20 μm and satisfying the expression H/D≧5, where H is a total height of the microneedle, and D is a diameter of a bottom surface of the frustum).

3. 发明授权

US08722765B2 Alumina particle composite, method of manufacturing the alumina particle composite, resin composition and method of manufacturing the resin composition 失效
标题翻译：氧化铝微粒复合体，氧化铝微粒复合体的制造方法，树脂组合物和树脂组合物的制造方法
公开(公告)号：US08722765B2
公开(公告)日：2014-05-13
申请号：US13469302
申请日：2012-05-11
申请人： Takashi Oda , Yasuaki Kai , Tomohiro Ito , Takashi Seino , Hironobu Muramatsu
发明人： Takashi Oda , Yasuaki Kai , Tomohiro Ito , Takashi Seino , Hironobu Muramatsu
IPC分类号： C08K9/10 , C08K3/18 , C01F7/02
CPC分类号： C01F7/02 , B82Y30/00 , C01F7/021 , C01P2004/04 , C01P2004/10 , C01P2004/54 , C01P2004/62 , C01P2004/64 , C01P2006/22 , C08K9/04 , C09C1/407
摘要： An alumina particle composite (1) includes an alumina particle (2) and an organic acid (3) chemically bonded to a surface of the alumina particle (2). Further, the alumina particle (2) has a short axis length of 1 to 10 nm, a long axis length of 20 to 400 nm, and an aspect ratio of 5 to 80, and is represented by Formula I, Al2O3·nH2O Formula I where n is 0 or more.
摘要翻译：氧化铝颗粒复合材料（1）包括氧化铝颗粒（2）和与氧化铝颗粒（2）的表面化学键合的有机酸（3）。此外，氧化铝颗粒（2）的短轴长度为1〜10nm，长轴长度为20〜400nm，纵横比为5〜80，由式I表示，Al 2 O 3·nH 2 O式I 其中n为0以上。

4. 发明授权

US08420510B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08420510B2
公开(公告)日：2013-04-16
申请号：US13530037
申请日：2012-06-21
申请人： Takashi Oda , Naohide Takamoto , Hiroyuki Senzai
发明人： Takashi Oda , Naohide Takamoto , Hiroyuki Senzai
IPC分类号： H01L21/00
CPC分类号： H01L24/27 , H01L23/3114 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16148 , H01L2224/16225 , H01L2224/16245 , H01L2224/27003 , H01L2224/27334 , H01L2224/32145 , H01L2224/73104 , H01L2224/81193 , H01L2224/8191 , H01L2224/83191 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/01029 , H01L2924/15787 , H01L2924/3512 , H01L2924/00
摘要： Provided is a method of manufacturing a semiconductor device wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The method of manufacturing a semiconductor device of the present invention includes preparing a semiconductor wafer with a plurality of members for connection formed on both first and second surfaces; preparing a laminated film including a dicing sheet with a pressure-sensitive adhesive layer laminated on a base material, and a curable film that is laminated on the pressure-sensitive adhesive layer and has a thickness equivalent to or more than the height of the member for connection on the first surface; pasting the curable film of the laminated film to the semiconductor wafer while facing the curable film to the first surface so that the members for connection are not exposed to the pressure-sensitive adhesive layer; and dicing the semiconductor wafer to form a semiconductor element.
摘要翻译：提供一种制造半导体器件的方法，其中可以容易且可靠地填充三维安装的半导体元件之间的空间。本发明的半导体器件的制造方法包括：在第一和第二表面上制备具有多个用于连接的构件的半导体晶片; 制备包括层压在基材上的压敏粘合剂层的切割片的层压膜和层压在压敏粘合剂层上的厚度等于或大于该部件的高度的固化膜第一面上的连接; 将所述层叠膜的固化膜粘贴到所述半导体晶片，同时将所述固化膜面向所述第一表面，使得所述连接构件不暴露于所述压敏粘合剂层; 并切割半导体晶片以形成半导体元件。

5. 发明申请

US20130054040A1 Load Leveling System of Power System 有权
标题翻译：电力系统负载调平系统
公开(公告)号：US20130054040A1
公开(公告)日：2013-02-28
申请号：US13588080
申请日：2012-08-17
申请人： Hirotaka Takahashi , Yasushi Tomita , Takashi Oda , Eri Isozaki , Tsukasa Onishi , Kazuhiro Horikoshi , Katsuhiro Matsuda
发明人： Hirotaka Takahashi , Yasushi Tomita , Takashi Oda , Eri Isozaki , Tsukasa Onishi , Kazuhiro Horikoshi , Katsuhiro Matsuda
IPC分类号： G06F1/26
CPC分类号： H02J3/14 , H02J2003/003 , Y02B70/3225 , Y04S10/54 , Y04S20/222
摘要： It is an object of the present invention to provide a load leveling system of a power system capable of attaining load leveling in a distribution substation unit and a method thereof. Disclosed is a load leveling system of a power system with a controller having a major customer and lower transforming apparatus, and with a customer connected to the lower transforming apparatus via a low-voltage line. The system also has a communication unit between the customer and its own system, and control use time zones of devices within the customer; an electric demand prediction unit, and a first load leveling processing unit. By employing such an arranged system, it becomes possible to provide a load leveling system of a power system capable of realizing load leveling of both a distribution substation unit and a pole transformer unit.
摘要翻译：本发明的目的是提供一种能够实现配电站单元中的负载调平的电力系统的负载均衡系统及其方法。公开了一种具有控制器的电力系统的负载均衡系统，该控制器具有主要客户和较低转换装置，并且客户经由低压线连接到下变换装置。该系统还具有客户与其自身系统之间的通信单元，并控制客户内设备的使用时区; 电力需求预测单元和第一负载均衡处理单元。通过采用这种布置的系统，可以提供能够实现配电站单元和极点变压器单元的负载均衡的电力系统的负载均衡系统。

6. 发明申请

US20120326280A1 LAMINATED FILM AND USE THEREOF 有权
标题翻译：层压膜及其使用
公开(公告)号：US20120326280A1
公开(公告)日：2012-12-27
申请号：US13530068
申请日：2012-06-21
申请人： Takashi Oda , Naohide Takamoto , Hiroyuki Senzai
发明人： Takashi Oda , Naohide Takamoto , Hiroyuki Senzai
IPC分类号： H01L23/544 , B32B7/12 , C09J7/02 , H01L21/78
CPC分类号： H01L24/27 , C09J7/22 , C09J7/30 , C09J2201/36 , C09J2201/606 , C09J2201/61 , C09J2203/326 , C09J2433/00 , C09J2461/00 , C09J2463/00 , H01L23/29 , H01L23/3114 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16148 , H01L2224/16225 , H01L2224/16245 , H01L2224/27003 , H01L2224/27334 , H01L2224/32145 , H01L2224/73104 , H01L2224/81193 , H01L2224/8191 , H01L2224/83191 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/01029 , H01L2924/15787 , Y10T428/2826 , H01L2924/01082 , H01L2924/01047 , H01L2924/0103 , H01L2924/01083 , H01L2924/3512 , H01L2924/00
摘要： Provided is a laminated film wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The laminated film of the present invention is a laminated film for filling the space between semiconductor elements that are electrically connected through a member or connection, the film including a dicing sheet in which a pressure-sensitive adhesive layer is laminated on a base material and a curable film that is laminated on the pressure-sensitive adhesive layer, wherein the curable film has a lowest melt viscosity at 50 to 200° C. of 1×102 Pa·s or more and 1×104 Pa·s or less.
摘要翻译：提供一种层叠膜，其中可以容易且可靠地填充三维安装的半导体元件之间的空间。本发明的层压膜是用于填充通过构件或连接电连接的半导体元件之间的空间的层压膜，该膜包括其中压敏粘合剂层层压在基材上的切割片和层压在粘合剂层上的固化膜，其中固化膜在50〜200℃下的熔融粘度最低为1×102Pa·s以上且1×104Pa·s以下。

7. 发明申请

US20120289653A1 ALUMINA PARTICLE COMPOSITE, METHOD OF MANUFACTURING THE ALUMINA PARTICLE COMPOSITE, RESIN COMPOSITION AND METHOD OF MANUFACTURING THE RESIN COMPOSITION 失效
标题翻译：氧化铝颗粒复合材料，制造氧化铝颗粒复合材料的方法，树脂组合物和制备树脂组合物的方法
公开(公告)号：US20120289653A1
公开(公告)日：2012-11-15
申请号：US13469302
申请日：2012-05-11
申请人： Takashi Oda , Yasuaki Kai , Tomohiro Itou , Takashi Seino , Hironobu Muramatsu
发明人： Takashi Oda , Yasuaki Kai , Tomohiro Itou , Takashi Seino , Hironobu Muramatsu
IPC分类号： C08K3/22 , C08L33/12 , C08L69/00
CPC分类号： C01F7/02 , B82Y30/00 , C01F7/021 , C01P2004/04 , C01P2004/10 , C01P2004/54 , C01P2004/62 , C01P2004/64 , C01P2006/22 , C08K9/04 , C09C1/407
摘要： An alumina particle composite (1) includes an alumina particle (2) and an organic acid (3) chemically bonded to a surface of the alumina particle (2). Further, the alumina particle (2) has a short axis length of 1 to 10 nm, a long axis length of 20 to 400 nm, and an aspect ratio of 5 to 80, and is represented by Formula I, Al2O3.nH2O Formula I where n is 0 or more.
摘要翻译：氧化铝颗粒复合材料（1）包括氧化铝颗粒（2）和与氧化铝颗粒（2）的表面化学键合的有机酸（3）。此外，氧化铝颗粒（2）的短轴长度为1〜10nm，长轴长度为20〜400nm，纵横比为5〜80，由式I表示，Al 2 O 3·nH 2 O式I 其中n为0以上。

8. 发明授权

US08247890B2 Wiring circuit structure and manufacturing method for semiconductor device using the structure 有权
标题翻译：使用该结构的半导体器件的接线电路结构和制造方法
公开(公告)号：US08247890B2
公开(公告)日：2012-08-21
申请号：US12952404
申请日：2010-11-23
申请人： Takashi Oda , Shigenori Morita
发明人： Takashi Oda , Shigenori Morita
IPC分类号： H01L23/495
CPC分类号： H01L24/81 , H01L21/6835 , H01L23/49816 , H01L23/49827 , H01L23/49838 , H01L24/13 , H01L24/16 , H01L2221/68345 , H01L2224/10165 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/16227 , H01L2224/29015 , H01L2224/73103 , H01L2224/73203 , H01L2224/81001 , H01L2224/81136 , H01L2224/8114 , H01L2224/81193 , H01L2224/81801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , H01L2924/1461 , H01L2924/15788 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A conductor layer 2 is formed as a circuit pattern on a base insulating layer 1, a terminal 3 is formed thereon, and a supporting column 4 is formed in the vicinity of the terminal on the upper face of the base insulating layer 1. Here, supposing the protrusion height B of the bump from the element to be connected is B, the height of the supporting column is H, the height of the terminal is h, and the layer thickness of the terminal is t, as measured from the upper face of the base insulating layer as the reference surface, the height H of the supporting column is determined to satisfy B
摘要翻译：在基底绝缘层1上形成导体层2作为电路图案，在其上形成端子3，并且在基底绝缘层1的上表面上的端子附近形成支撑柱4.这里，假设凸起的突出高度B与要连接的元件的B高度一致，支柱的高度为H，端子的高度为h，端子的层厚为t，从上表面作为基准面的基底绝缘层的高度H被确定为满足B

9. 发明申请

US20120205820A1 ENCAPSULATING RESIN SHEET AND SEMICONDUCTOR DEVICE USING THE SAME, AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：使用其的封装树脂片和半导体器件以及半导体器件的制造方法
公开(公告)号：US20120205820A1
公开(公告)日：2012-08-16
申请号：US13364592
申请日：2012-02-02
申请人： Takashi Oda , Kosuke Morita , Hiroyuki Senzai
发明人： Takashi Oda , Kosuke Morita , Hiroyuki Senzai
IPC分类号： H01L23/522 , B32B7/02 , B32B27/38 , H01L21/56
CPC分类号： H01L21/563 , H01L23/293 , H01L23/295 , H01L2224/29082 , H01L2224/73104 , H01L2224/83191 , Y10T428/24942 , Y10T428/2495
摘要： Provided are an encapsulating resin sheet having improved a connection reliability by improving a connection failure, and by suppressing intrusion of an inorganic filler between terminals of the semiconductor element and the interconnection circuit substrate, a semiconductor device using the same, and a fabricating method for the semiconductor device. The encapsulating resin sheet is an epoxy resin composition sheet having a two-layer structure of an inorganic filler containing layer and an inorganic filler non-containing layer, in which a melt viscosity of the inorganic filler containing layer is 1.0×102 to 2.0×104 Pa·s, a melt viscosity of the inorganic filler non-containing layer is 1.0×103 to 2.0×105 Pa·s, a viscosity difference between both layers is 1.5×104 Pa·s or more; and a thickness of the inorganic filler non-containing layer is ⅓ to ⅘ of a height of the connecting electrode portion formed in the semiconductor element.
摘要翻译：提供一种封装树脂片，其通过改善连接故障而提高连接可靠性，并且通过抑制半导体元件和互连电路基板的端子之间的无机填料的侵入，使用该封装树脂片的半导体器件及其制造方法半导体器件。封装树脂片是具有无机填料含有层和无机填料不含层的两层结构的无机填料含有层的熔融粘度为1.0×10 2〜2.0×10 4的环氧树脂组合物片 Pa·s时，无机填料无含水层的熔融粘度为1.0×10 3〜2.0×10 5 Pa·s，两层之间的粘度差为1.5×10 4 Pa·s以上; 无机填料不含有层的厚度为半导体元件中形成的连接电极部的高度的1/3〜。。

10. 再颁专利

USRE43468E1 Alumina particles of high aspect ratio, alumina particle manufacturing method, resin composition, and resin composition manufacturing method 失效
标题翻译：高纵横比的氧化铝颗粒，氧化铝颗粒的制造方法，树脂组合物和树脂组合物制造方法
公开(公告)号：USRE43468E1
公开(公告)日：2012-06-12
申请号：US12621060
申请日：2009-11-18
申请人： Takashi Oda , Yasuaki Kai , Tomohiro Ito
发明人： Takashi Oda , Yasuaki Kai , Tomohiro Ito
IPC分类号： B32B5/16 , C04B14/30
CPC分类号： C01F7/02 , B82Y30/00 , C01F7/34 , C01F7/448 , C01P2004/04 , C01P2004/13 , C01P2004/54 , Y10T428/257 , Y10T428/2982
摘要： An alumina particle (1) of the present invention has an alumina body with a short axis length (b) of 1 to 10 nm, a long axis length (a) of 20 to 400 nm and an aspect ratio (a/b) of 5 to 80. The alumina body is expressed by a Formula I, and n is not less than 0. Al2O3.nH2O Formula I
摘要翻译：本发明的氧化铝颗粒（1）具有短轴长（b）为1〜10nm，长轴长（a）为20〜400nm，纵横比（a / b）为氧化铝体由式I表示，n不小于0.Al 2 O 3·nH 2 O式I

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