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1. 发明授权

US07135736B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07135736B2
公开(公告)日：2006-11-14
申请号：US10616917
申请日：2003-07-11
申请人： Takashi Nishikawa , Takashi Ohtsuka
发明人： Takashi Nishikawa , Takashi Ohtsuka
IPC分类号： H01L29/788
CPC分类号： H01L21/28291 , H01L21/28273 , H01L29/78391
摘要： This specification relates to a semiconductor device that comprises a semiconductor substrate 11, a source region 12 and a drain region 13, which are formed on the semiconductor substrate 11 with a channel region 14 therebetween; a floating gate electrode 152 that is formed on the channel region 14 with a gate insulator film 151 therebetween; a ferroelectric film 154 that is formed on the floating gate electrode 152; and a control gate electrode 156 that is formed on the ferroelectric film 154, wherein intermediate insulator films 153 and 155 are formed between at least one of the pairs consisting of the floating gate electrode 152 and the ferroelectric film 154, and the ferroelectric film 154 and the control gate electrode 156, and the intermediate insulator films 153 and 155 are made of hafnium oxide that contains nitrogen atoms.
摘要翻译：本说明书涉及半导体器件，其包括在半导体衬底11上形成有沟道区域14的半导体衬底11，源极区12和漏极区13; 在沟道区域14上形成有栅极绝缘膜151的浮栅电极152; 形成在浮栅电极152上的铁电体膜154; 以及形成在铁电体膜154上的控制栅极电极156，其中，在由浮置栅极电极152和铁电体膜154构成的至少一对之间形成中间绝缘膜153,155，以及强电介质膜154和控制栅电极156和中间绝缘膜153,155由含有氮原子的氧化铪构成。

2. 发明授权

US07022530B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07022530B2
公开(公告)日：2006-04-04
申请号：US10311292
申请日：2002-04-03
申请人： Kiyoyuki Morita , Shoji Miyake , Michihito Ueda , Takashi Ohtsuka , Takashi Nishikawa
发明人： Kiyoyuki Morita , Shoji Miyake , Michihito Ueda , Takashi Ohtsuka , Takashi Nishikawa
IPC分类号： H01G7/06
CPC分类号： H01L29/802 , H01L21/823807 , H01L21/84 , H01L27/092 , H01L27/10873 , H01L27/11502 , H01L27/11507 , H01L27/1203 , H01L27/1214 , H01L27/1222 , H01L28/55 , H01L29/1054 , H01L29/783 , H01L29/78687
摘要： A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.
摘要翻译：依次沉积硅衬底101上的氧化硅膜102，Pt膜103x，Ti膜104x和PZT膜105x。将Si衬底101放置在室106中，使得PZT膜105x被EHF波108照射。用EHF波照射局部加热电介质膜，例如PZT膜。结果，可以改善例如电介质膜的泄漏特性，而不会对形成在Si衬底101上的器件产生不利影响。

3. 发明授权

US07002388B2 Nonvolatile flip-flop circuit and method of driving the same 有权
标题翻译：非易失性触发电路及其驱动方法
公开(公告)号：US07002388B2
公开(公告)日：2006-02-21
申请号：US11080454
申请日：2005-03-16
申请人： Takashi Nishikawa , Kenji Toyoda , Takashi Ohtsuka
发明人： Takashi Nishikawa , Kenji Toyoda , Takashi Ohtsuka
IPC分类号： H03K3/289 , H03K3/356
CPC分类号： H03K3/356008 , G11C11/22
摘要： The present invention provides a method of driving a nonvolatile flip-flop circuit comprising the following steps of: a data hold step of holding an input data signal D utilizing polarization of a ferroelectric material of a ferroelectric gate transistor (601) when the data signal D is input while a first clocked inverter (604), a second clocked inverter (603), and a third switching element (602) are turned on and a first switching element (605), a second switching element (607), and a third clocked inverter (608) are turned off; and a data output step of outputting an output signal Q (−Q) based on the held data signal D placing the first clocked inverter (604), the second clocked inverter (603), and the third switching element (602) in the OFF state and placing the first switching element (605), the second switching element (607), and the third clocked inverter (608) in the ON state so as to interrupt an input of a data signal and maintain a polarization state of the ferroelectric material of the ferroelectric gate transistor (601).
摘要翻译：本发明提供了一种驱动非易失性触发电路的方法，包括以下步骤：数据保持步骤，当数据信号D（D）被利用时，利用铁电栅极晶体管（601）的铁电材料的极化来保持输入数据信号D 在第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）导通时，第一开关元件（605），第二开关元件（607）和第三开关元件时钟反相器（608）关闭; 以及数据输出步骤，基于将第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）放置在OFF中的保持数据信号D输出输出信号Q（-Q）状态，并且将第一开关元件（605），第二开关元件（607）和第三时钟反相器（608）置于导通状态，以便中断数据信号的输入并保持铁电材料的极化状态的铁电栅极晶体管（601）。

4. 发明申请

US20050206421A1 Nonvolatile flip-flop circuit and method of driving the same 有权
标题翻译：非易失性触发电路及其驱动方法
公开(公告)号：US20050206421A1
公开(公告)日：2005-09-22
申请号：US11080454
申请日：2005-03-16
申请人： Takashi Nishikawa , Kenji Toyoda , Takashi Ohtsuka
发明人： Takashi Nishikawa , Kenji Toyoda , Takashi Ohtsuka
IPC分类号： G11C11/22 , H03K3/356 , H03K3/289
CPC分类号： H03K3/356008 , G11C11/22
摘要： The present invention provides a method of driving a nonvolatile flip-flop circuit comprising the following steps of: a data hold step of holding an input data signal D utilizing polarization of a ferroelectric material of a ferroelectric gate transistor (601) when the data signal D is input while a first clocked inverter (604), a second clocked inverter (603), and a third switching element (602) are turned on and a first switching element (605), a second switching element (607), and a third clocked inverter (608) are turned off; and a data output step of outputting an output signal Q (−Q) based on the held data signal D placing the first clocked inverter (604), the second clocked inverter (603), and the third switching element (602) in the OFF state and placing the first switching element (605), the second switching element (607), and the third clocked inverter (608) in the ON state so as to interrupt an input of a data signal and maintain a polarization state of the ferroelectric material of the ferroelectric gate transistor (601).
摘要翻译：本发明提供了一种驱动非易失性触发电路的方法，包括以下步骤：数据保持步骤，当数据信号D（D）被利用时，利用铁电栅极晶体管（601）的铁电材料的极化来保持输入数据信号D 在第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）导通时，第一开关元件（605），第二开关元件（607）和第三开关元件时钟反相器（608）关闭; 以及数据输出步骤，基于将第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）放置在OFF中的保持数据信号D输出输出信号Q（-Q）状态，并且将第一开关元件（605），第二开关元件（607）和第三时钟反相器（608）置于导通状态，以便中断数据信号的输入并保持铁电材料的极化状态的铁电栅极晶体管（601）。

5. 发明授权

US07951497B2 Fuel cell system 有权
标题翻译：燃料电池系统
公开(公告)号：US07951497B2
公开(公告)日：2011-05-31
申请号：US10542171
申请日：2004-07-26
申请人： Yoshikazu Tanaka , Takashi Nishikawa , Masataka Ozeki , Akinari Nakamura
发明人： Yoshikazu Tanaka , Takashi Nishikawa , Masataka Ozeki , Akinari Nakamura
IPC分类号： H01M8/04
CPC分类号： H01M8/04604 , H01M8/04223 , H01M8/04225 , H01M8/04302 , H01M8/04955 , H01M8/0612
摘要： A fuel cell system of the present invention comprises a fuel cell (13), a load value detecting means (16) configured to detect a load value of a load of electric power or heat which is generated by equipment (14) supplied with the electric power or the heat from the fuel cell system, a load value storage means (17) configured to store a history of the load value which is detected by the load value detecting means (16), a load value predicting means (18) configured to predict a load value which is going to be generated, based on the history of the load value, and to store the predicted load value as load value data, and scheduled start-up time of a fuel cell (13) is decided based on the load value data.
摘要翻译：本发明的燃料电池系统包括燃料电池（13），负载值检测装置（16），其被配置为检测由提供有电的设备（14）产生的电力或热量负载的负载值功率或来自燃料电池系统的热量，负载值存储装置（17），被配置为存储由负载值检测装置（16）检测的负载值的历史，负载值预测装置（18），被配置为基于负载值的历史来预测将要生成的负载值，并将预测负载值存储为负载值数据，并且基于所述负载值数据来确定燃料电池（13）的计划启动时间负载值数据。

6. 发明授权

US06169296A Light-emitting diode device 有权
标题翻译：发光二极管装置
公开(公告)号：US06169296A
公开(公告)日：2001-01-02
申请号：US09176906
申请日：1998-10-22
申请人： Satoshi Kamiyama , Shigeo Yoshii , Ryoko Miyanaga , Takashi Nishikawa , Tohru Saitoh , Yoichi Sasai
发明人： Satoshi Kamiyama , Shigeo Yoshii , Ryoko Miyanaga , Takashi Nishikawa , Tohru Saitoh , Yoichi Sasai
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L33/145 , H01L33/38 , H01L33/42
摘要： The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.
摘要翻译：本发明的发光二极管器件包括有源层，p型接触层，肖特基电极和欧姆电极。有源层形成在n型半导体衬底上。接触层形成在有源层上。肖特基电极选择性地形成在接触层上并与接触层进行肖特基接触。欧姆电极形成为围绕接触层上的肖特基电极并与肖特基电极电连接并透射从有源层发射的光。

7. 发明授权

US5619520A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5619520A
公开(公告)日：1997-04-08
申请号：US523189
申请日：1995-09-05
申请人： Yoichi Sasai , Nobuyuki Uemura , Satoshi Kamiyama , Minoru Kubo , Takashi Nishikawa
发明人： Yoichi Sasai , Nobuyuki Uemura , Satoshi Kamiyama , Minoru Kubo , Takashi Nishikawa
IPC分类号： H01S5/223 , H01S5/347 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/347 , H01S5/2231
摘要： A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x
摘要翻译：本发明的半导体激光器包括：半导体衬底; 由第一导电型ZnMgSSe制成的第一包层，其由半导体衬底保持并与半导体衬底晶格匹配; 由与半导体基板的第二导电型ZnMgSSe晶格匹配构成的条状的第二包层; 包括由Zn1-xMgxS1-ySey（0≤x≤1,0

8. 发明授权

US07820584B2 Visible light-responsive photocatalyst, method for producing same, photocatalyst coating agent using same, and photocatalyst dispersion 有权
标题翻译：可见光响应性光催化剂，其制造方法，使用该光催化剂的光催化剂涂布剂和光催化剂分散体
公开(公告)号：US07820584B2
公开(公告)日：2010-10-26
申请号：US12225011
申请日：2007-03-13
申请人： Youichi Ishibai , Takashi Nishikawa , Junya Sato
发明人： Youichi Ishibai , Takashi Nishikawa , Junya Sato
IPC分类号： B01J27/135
CPC分类号： B01J35/004 , B01J23/42 , B01J27/13 , B01J35/002 , B01J37/0215 , B01J37/03
摘要： Disclosed is a photocatalyst which is excited when irradiated with visible light and exhibits high photocatalytic activity stably. This photocatalyst has a white hue with little yellow tint. Specifically, titanium oxide particles and a halogenated platinum compound are heated and mixed in a liquid medium, so that the surfaces of the titanium oxide particles are loaded with the halogenated platinum compound; then the pH of the liquid medium is adjusted to 5 or less; and after that, the liquid medium is neutralized if necessary. By such a process, there can be produced a photocatalyst having a specific surface area of 10-100 m2/g, wherein the surfaces of the titanium oxide particles are loaded with the halogenated platinum compound and the b* value of the powder color according to the Hunter color system is not more than 6.
摘要翻译：公开了一种当用可见光照射并且稳定地表现出高光催化活性时被激发的光催化剂。这种光催化剂具有黄色色调的白色色调。具体地说，将氧化钛颗粒和卤化铂化合物在液体介质中加热混合，以使二氧化钛颗粒的表面装载卤化铂化合物; 然后将液体介质的pH调节至5以下; 之后，根据需要中和液体介质。通过这样的方法，可以制造比表面积为10〜100m 2 / g的光催化剂，其中，氧化钛粒子的表面装载有卤化铂化合物，粉末颜色的b *值根据猎人色系不超过6。

9. 发明授权

US07615296B2 Fuel cell system 有权
标题翻译：燃料电池系统
公开(公告)号：US07615296B2
公开(公告)日：2009-11-10
申请号：US11547562
申请日：2005-08-04
申请人： Hideo Ohara , Masataka Ozeki , Akinari Nakamura , Yoshikazu Tanaka , Shigeki Yasuda , Takashi Nishikawa
发明人： Hideo Ohara , Masataka Ozeki , Akinari Nakamura , Yoshikazu Tanaka , Shigeki Yasuda , Takashi Nishikawa
IPC分类号： H01M8/04
CPC分类号： H01M8/04156 , H01M8/04022 , H01M8/04223 , H01M8/04228 , H01M8/0612 , H01M8/0662
摘要： A fuel cell system includes a fuel cell configured to generate power by consuming a fuel gas and having an outlet port through which the fuel gas flows out; a moisture removal unit configured to remove moisture contained in the fuel gas that has been sent through the outlet port; a burner located downstream of the moisture removal unit to combust the fuel gas; and a gas pipe on-off valve configured to open and close a pipe that makes the moisture removal unit and the burner communicate with each other, and the fuel cell system is designed such that the gas pipe on-off valve closes when the power generation stops.
摘要翻译：燃料电池系统包括燃料电池，该燃料电池被配置为通过消耗燃料气体并且具有燃料气体流出的出口来发电; 除湿单元，其构造成去除通过所述出口端口送出的燃料气体中含有的水分; 位于除湿单元下游的燃烧燃料气体的燃烧器; 以及配置为打开和关闭使除湿单元和燃烧器彼此连通的管道的燃气管开关阀，并且燃料电池系统被设计成使得当发电的气体管道开关阀关闭时停止

10. 发明授权

US06569240B1 Dielectric film and method for forming the same 失效
公开(公告)号：US06569240B1
公开(公告)日：2003-05-27
申请号：US09527475
申请日：2000-03-17
申请人： Takashi Nishikawa , Kenji Iijima
发明人： Takashi Nishikawa , Kenji Iijima
IPC分类号： C30B2502
CPC分类号： C30B23/02 , C30B29/16
摘要： After an underlying layer, made of a single crystal metal material, has been formed on a semiconductor layer, part or all of the underlying layer is changed into a metal oxide layer by supplying oxygen thereto from above the underlying layer. Then, a ferroelectric or high-dielectric-constant film is further formed on the metal oxide layer. Since the film made of a metal material is formed on the semiconductor layer, a silicon dioxide film or the like is not formed easily. Thus, a dielectric film, which includes an underlying layer with a high dielectric constant and has a large capacitance per unit area, can be obtained. Various defects such as interface states in the semiconductor layer can also be reduced advantageously if these process steps are performed after a thermal oxide film has been formed on the semiconductor layer.

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