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    • 4. 发明申请
    • Solar radiation shielding member and solar radiation shielding member forming fluid dispersion
    • 太阳辐射屏蔽构件和太阳辐射屏蔽构件形成流体分散体
    • US20090216492A1
    • 2009-08-27
    • US12453034
    • 2009-04-28
    • Takeshi ChonanKenji Adachi
    • Takeshi ChonanKenji Adachi
    • G06F15/00
    • C03C14/00C03C14/004C03C2214/04C03C2214/08C03C2214/16C09D5/32G02B5/206
    • A solar radiation shielding member comprising solar radiation shielding fine particles, which has a transmittance having a maximum value at a wavelength of from 400 nm to 700 nm and a minimum value at a wavelength of from 700 nm to 1,800 nm, and, where the maximum value of the transmittance is represented by P, the minimum value thereof by B and the visible-light transmittance by VLT, has solar radiation shielding performance satisfying the following mathematical expression (1) at 60%≦VLT≦80% or satisfying the following mathematical expression (2) at 38%≦VLT≦55%: P/B+0.2067×VLT≧17.5  (1); or P/B+2.4055×VLT≧133.6  (2).
    • 一种太阳辐射屏蔽构件,包括太阳辐射屏蔽微粒,其具有在400nm至700nm波长处具有最大值的透射率和在700nm至1800nm的波长处的最小值,并且其中最大值 透射率的值由P表示,其最小值B和VLT的可见光透射率在60%<= VLT <= 80%时具有满足以下数学式(1)的太阳辐射屏蔽性能,或满足 以下数学表达式(2)为38%<= VLT <= 55%:<?in-line-formula description =“In-line Formulas”end =“lead”?> P / B + 0.2067xVLT> = 17.5(1 ); 或<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> P / B + 2.4055 xVLT> = 133.6(2)。<?in-line-formula description =“In-line Formulas”end =“tail”?>
    • 7. 发明申请
    • Sun shade and dispersion liquid for forming sun shade
    • 太阳遮阳和分散液形成遮阳
    • US20060086928A1
    • 2006-04-27
    • US10533586
    • 2003-12-18
    • Takeshi ChonanKenji Adachi
    • Takeshi ChonanKenji Adachi
    • G02B5/20
    • C03C14/00C03C14/004C03C2214/04C03C2214/08C03C2214/16C09D5/32G02B5/206
    • A solar radiation shielding member comprising solar radiation shielding fine particles, which has a transmittance having a maximum value at a wavelength of from 400 nm to 700 nm and a minimum value at a wavelength of from 700 nm to 1,800 nm, and, where the maximum value of the transmittance is represented by P, the minimum value thereof by B and the visible-light transmittance by VLT, has solar radiation shielding performance satisfying the following mathematical expression (1) at 60%≦VLT≦80% or satisfying the following mathematical expression (2) at 38%≦VLT≦55%: P/B+0.2067×VLT≧17.5   (1); or P/B+2.4055×VLT≧133.6   (2).
    • 一种太阳辐射屏蔽构件,包括太阳辐射屏蔽微粒,其具有在400nm至700nm波长处具有最大值的透射率和在700nm至1800nm的波长处的最小值,并且其中最大值 透射率的值由P表示,其最小值B和VLT的可见光透射率在60%<= VLT <= 80%时具有满足以下数学式(1)的太阳辐射屏蔽性能,或满足 以下数学表达式(2)为38%<= VLT <= 55%:<?in-line-formula description =“In-line formula”end =“lead”?> P / B + 0.2067x VLT> = 17.5(1 ); <?in-line-formula description =“In-line Formulas”end =“tail”?>或<?in-line-formula description =“In-line Formulas”end =“lead”?> P / B + 2.4055x VLT> = 133.6(2)。 <?in-line-formula description =“In-line Formulas”end =“tail”?>
    • 9. 发明授权
    • Process for making a two-layer film carrier
    • 制备两层薄膜载体的方法
    • US5217849A
    • 1993-06-08
    • US837104
    • 1992-02-18
    • Takeshi ChonanYoshihiro HirotaYuko Kudo
    • Takeshi ChonanYoshihiro HirotaYuko Kudo
    • H01L21/48H01L23/495H05K1/03H05K3/00H05K3/10H05K3/40
    • H05K3/002H01L21/4846H01L23/49572H05K3/4092H01L2924/0002H01L2924/3011H05K1/0346H05K2201/0154H05K2201/0166H05K3/108
    • A two-layer film carrier for TAB is made from a substrate prepared by forming a copper layer on a polyimide film by additive plating. A photoresist layer is formed on the copper layer, and another photoresist layer on the polyimide film. Both of the photoresist layers are simultaneously exposed to light through a mask applied to each of them to define a desired pattern. The exposed portions of the photoresist layer on the copper layer are subjected to development and postbaking, whereby selected portions of the copper layer are exposed. The exposed portions of the copper layer are additive plated with copper, whereby leads are formed. The exposed portions of the photoresist layer on the polyimide film are subjected to development and postbaking, whereby selected portions of the polyimide film are exposed. The remaining portions of the photoresist layer are removed from the copper layer and the underlying copper layer is etched. The exposed portions of the polyimide film are etched, and the remaining portions of the photoresist layer are removed from the polyimide film.
    • 用于TAB的双层膜载体由通过添加电镀在聚酰亚胺膜上形成铜层而制备的基板制成。 在铜层上形成光致抗蚀剂层,在聚酰亚胺膜上形成另一个光致抗蚀剂层。 通过施加到其中的每一个的掩模,两个光致抗蚀剂层同时暴露于光以限定期望的图案。 对铜层上的光致抗蚀剂层的暴露部分进行显影和后烘烤,由此露出铜层的选定部分。 铜层的露出部分用铜添加电镀,由此形成引线。 对聚酰亚胺膜上的光致抗蚀剂层的暴露部分进行显影和后烘烤,由此暴露聚酰亚胺膜的选定部分。 光致抗蚀剂层的其余部分从铜层去除并且下面的铜层被蚀刻。 蚀刻聚酰亚胺膜的露出部分,将光刻胶层的其余部分从聚酰亚胺膜中除去。