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    • 2. 发明授权
    • Methods of manufacturing a two-terminal nonlinear device
    • 制造两端非线性器件的方法
    • US06563555B1
    • 2003-05-13
    • US09532018
    • 2000-03-21
    • Takashi InoueYasushi TakanoTakeyoshi UshikiTakumi Seki
    • Takashi InoueYasushi TakanoTakeyoshi UshikiTakumi Seki
    • G02F1136
    • H01L45/00G02F1/1365Y10T29/413
    • An MIM nonlinear device having a large nonlinearity coefficient that represents the sharpness of the voltage-current characteristic, a liquid crystal display panel with high image-quality that uses this device, and a manufacturing method of said MIM nonlinear device are provided. The MIM nonlinear device contains a first conductive film 22, an insulating film 24, and a second conductive film 26 laminated on a substrate 30. The insulating film 24 may contain water, and in the insulating film, in a thermal desorption spectrum, a peak derived from water in the insulating film is 225-300° C. Further, in said thermal desorption spectrum, the number of molecules calculated from the area of the peak derived from the water is preferably 5×1014/cm2 or more.
    • 提供了具有表示电压 - 电流特性的锐度的非线性系数大的MIM非线性器件,使用该器件的具有高图像质量的液晶显示面板以及所述MIM非线性器件的制造方法。 MIM非线性器件包含层叠在基板30上的第一导电膜22,绝缘膜24和第二导电膜26.绝缘膜24可以含有水,并且在绝热膜中,在热解吸光谱中,峰 绝缘膜中的水衍生自225-300℃。此外,在所述热解吸附光谱中,从源自水的峰的面积计算出的分子数优选为5×10 14 / cm 2以上。
    • 3. 发明授权
    • Method of fabricating two-terminal nonlinear element using non-aqueous electrolyte
    • 使用非水电解质制造二端非线性元件的方法
    • US06663760B2
    • 2003-12-16
    • US09117681
    • 1998-09-15
    • Takashi InoueTakeyoshi UshikiTakumi SekiMakoto UeFumikazu MizutaniSachie Takeuchi
    • Takashi InoueTakeyoshi UshikiTakumi SekiMakoto UeFumikazu MizutaniSachie Takeuchi
    • C25D1126
    • C25D11/02G02F1/1365
    • A non-aqueous electrolyte comprises an organic solvent and a solute, and also has an electrolytic conductivity that is greater than or equal to 1 mS/cm but less than or equal to 100 mS/cm. This solute preferably includes at least one of a carboxylate and a salt of inorganic oxoacid. In addition, the non-aqueous electrolyte preferably comprises water in a proportion of 1 to 10 wt %. In an MIM nonlinear element (20), an insulated film (24) is formed by anodic oxidation using the above non-aqueous electrolyte. In addition, the insulated film comprises at least one of carbon atoms and atoms of families 3 to 7 that were originally the central atoms of the salt of inorganic oxoacid, and has a relative permittivity of 10 to 25. With this MIM nonlinear element, the capacitance is sufficiently small, the steepness of the voltage-current characteristic is sufficiently large, and also the resistance is sufficiently uniform over a wide area.
    • 非水电解质包含有机溶剂和溶质,并且还具有大于或等于1mS / cm但小于或等于100mS / cm的电解电导率。 该溶质优选包括无机含氧酸的羧酸盐和盐中的至少一种。 此外,非水电解质优选含有1〜10重量%的比例的水。 在MIM非线性元件(20)中,通过使用上述非水电解质的阳极氧化形成绝缘膜(24)。 此外,绝缘膜包含原子为无机含氧酸盐的中心原子的3至7族的碳原子和原子中的至少一个,并且具有10至25的相对介电常数。利用该MIM非线性元件, 电容足够小,电压 - 电流特性的陡峭度足够大,并且电阻在广泛的面积上也足够均匀。
    • 4. 发明授权
    • Two-terminal type non-linear element, manufacturing method thereof and liquid crystal display panel
    • 双端型非线性元件,其制造方法和液晶显示面板
    • US06384880B1
    • 2002-05-07
    • US09002954
    • 1998-01-05
    • Takashi InoueYasushi TakanoHideaki NaonoWataru ItoTsutomu AsakawaTakeyoshi Ushiki
    • Takashi InoueYasushi TakanoHideaki NaonoWataru ItoTsutomu AsakawaTakeyoshi Ushiki
    • G02F1136
    • H01L45/00G02F1/1365
    • The present invention provides a MIM type non-linear element in which the capacitance is sufficiently small and in which little changes over time are exhibited in the current-voltage characteristics, a liquid crystal display panel with high image quality using the MIM type non-linear element, and a method of manufacturing the MIM type non-linear element. The MIM type non-linear element includes a first conductive film, an insulation film and a second conductive film, which are laminated on a substrate. The insulation film has a relative dielectric constant of 25.5 or less, preferably 24.0-25.5. In elementary analysis by SIMS, a hydrogen spectrum of the boundary region between the first conductive film and the insulation film has a width of 10 nm or more in the depth direction at an intensity of one tenth of the peak intensity. The first conductive film of the MIM type non-linear element shows a peak temperature of 300° C. or higher in a thermal desorption spectroscopy of hydrogen. The MIM type non-linear element is manufactured by, for example, a method containing the steps of (a) forming the first conductive film, (b) heat-treating the first conductive film at a temperature of 300° C. or higher in an inert gas, (c) forming the insulation film on the surface of the first conductive film by anodization of the first conductive film, and (d) forming the second conductive film on the surface of the insulation film.
    • 本发明提供了一种MIM型非线性元件,其中电容足够小,并且在电流 - 电压特性中随时间呈现小的变化,使用MIM型非线性的具有高图像质量的液晶显示面板 元件,以及MIM型非线性元件的制造方法。 MIM型非线性元件包括层叠在基板上的第一导电膜,绝缘膜和第二导电膜。 绝缘膜的相对介电常数为25.5以下,优选为24.0〜25.5。 在通过SIMS的元素分析中,第一导电膜和绝缘膜之间的边界区域的氢谱在峰强度的十分之一处具有在深度方向上的10nm或更大的宽度。 MIM型非线性元件的第一导电膜在氢的热解吸光谱中显示出300℃以上的峰值温度。 MIM型非线性元件例如通过以下步骤制造:(a)形成第一导电膜,(b)在300℃以上的温度下对第一导电膜进行热处理 惰性气体,(c)通过第一导电膜的阳极氧化在第一导电膜的表面上形成绝缘膜,以及(d)在绝缘膜的表面上形成第二导电膜。
    • 5. 发明授权
    • Two-terminal type non-linear element, manufacturing method and liquid crystal display panel
    • 双端子型非线性元件,制造方法和液晶显示面板
    • US06710826B2
    • 2004-03-23
    • US10095688
    • 2002-03-13
    • Takashi InoueYasushi TakanoHideaki NaonoWataru ItoTsutomu AsakawaTakeyoshi Ushiki
    • Takashi InoueYasushi TakanoHideaki NaonoWataru ItoTsutomu AsakawaTakeyoshi Ushiki
    • G02F1136
    • H01L45/00G02F1/1365
    • The present invention provides a MIM type non-linear element in which the capacitance is sufficiently small and in which little changes over time are exhibited in the current-voltage characteristics, a liquid crystal display panel with high image quality using the MIM type non-linear element, and a method of manufacturing the MIM type non-linear element. The MIM type non-linear element includes a first conductive film, an insulation film and a second conductive film, which are laminated on a substrate. The insulation film has a relative dielectric constant of 25.5 or less, preferably 24.0-25.5. In elementary analysis by SIMS, a hydrogen spectrum of the boundary region between the first conductive film and the insulation film has a width of 10 nm or more in the depth direction at an intensity of one tenth of the peak intensity. The first conductive film of the MIM type non-linear element shows a peak temperature of 300° C. or higher in a thermal desorption spectroscopy of hydrogen. The MIM type non-linear element is manufactured by, for example, a method containing the steps of (a) forming the first conductive film, (b) heat-treating the first conductive film at a temperature of 300° C. or higher in an inert gas, (c) forming the insulation film on the surface of the first conductive film by anodization of the first conductive film, and (d) forming the second conductive film on the surface of the insulation film.
    • 本发明提供了一种MIM型非线性元件,其中电容足够小,并且在电流 - 电压特性中随时间呈现小的变化,使用MIM型非线性的具有高图像质量的液晶显示面板 元件,以及MIM型非线性元件的制造方法。 MIM型非线性元件包括层叠在基板上的第一导电膜,绝缘膜和第二导电膜。 绝缘膜的相对介电常数为25.5以下,优选为24.0〜25.5。 在通过SIMS的元素分析中,第一导电膜和绝缘膜之间的边界区域的氢谱在峰强度的十分之一处具有在深度方向上的10nm或更大的宽度。 MIM型非线性元件的第一导电膜在氢的热解吸光谱中显示出300℃以上的峰值温度。 MIM型非线性元件例如通过以下步骤制造:(a)形成第一导电膜,(b)在300℃以上的温度下对第一导电膜进行热处理 惰性气体,(c)通过第一导电膜的阳极氧化在第一导电膜的表面上形成绝缘膜,以及(d)在绝缘膜的表面上形成第二导电膜。
    • 6. 发明授权
    • Two-terminal nonlinear device, method for manufacturing the same, and
liquid-crystal display panel
    • 两端非线性器件及其制造方法以及液晶显示面板
    • US5994748A
    • 1999-11-30
    • US936545
    • 1997-09-24
    • Takashi InoueYasushi TakanoWataru ItoTsutomu AsakawaTakumi SekiYasuhiro Yoshimizu
    • Takashi InoueYasushi TakanoWataru ItoTsutomu AsakawaTakumi SekiYasuhiro Yoshimizu
    • G02F1/1365H01L45/00H01L29/78
    • H01L45/00G02F1/1365
    • A MIM nonlinear device is provided having a large nonlinearity coefficient that represents the sharpness of the voltage-current characteristic. A liquid-crystal display panel may be manufactured using the device to exhibit high image-quality. A method for manufacturing such a MIM nonlinear device is also provided. A MIM nonlinear device may include a first conductive film, an insulating film and a second conductive film laminated on a substrate. The insulating film may contain water at a content gradient descending in the direction of the film thickness from the surface facing the second conductive film. The hydrogen spectrum that is derived from the water and obtained by a secondary ion-mass spectrography (SIMS) elemental analysis with the radiation of cesium primary ions exhibits a peak near a surface of the insulating film facing the second conductive film. Additionally, the thermal desorption spectroscopy of the insulating film has a peak derived from water in the insulating film within a range of 220.degree. C..+-.5.degree. C.
    • 提供具有表示电压 - 电流特性的清晰度的非线性系数大的MIM非线性器件。 可以使用该装置制造液晶显示面板以显示高图像质量。 还提供了一种制造这种MIM非线性器件的方法。 MIM非线性器件可以包括层压在衬底上的第一导电膜,绝缘膜和第二导电膜。 绝缘膜可以含有从面向第二导电膜的表面沿膜厚度方向下降的含量梯度的水。 通过用铯初级离子的辐射进行二次离子质谱分析(SIMS)元素分析得到的氢色谱在面向第二导电膜的绝缘膜的表面附近表现出峰值。 此外,绝缘膜的热解吸光谱具有在220℃±5℃的范围内由绝缘膜中的水衍生的峰。
    • 7. 发明授权
    • Manufacturing method of mim nonlinear device, mim nonlinear device, and
liquid crystal display device
    • mim非线性器件,mim非线性器件和液晶显示器件的制造方法
    • US5867234A
    • 1999-02-02
    • US750042
    • 1996-11-29
    • Yasushi TakanoTakumi SekiYasuhiro YoshimizuTakashi Inoue
    • Yasushi TakanoTakumi SekiYasuhiro YoshimizuTakashi Inoue
    • G02F1/1365H01L45/00C23C28/00B05D3/02C25D5/50G02F1/135
    • H01L45/00G02F1/1365
    • In a manufacturing method of a MIM nonlinear device (50) having a Ta electrode layer (16), an anodic oxidation film (18) and a Cr electrode layer (20), tantalum oxidation film (14) is first formed on the transparent substrate (12). The Ta electrode layer (16) is formed on the tantalum oxidation film (14) and the anodic oxidation film (18) is formed on the Ta electrode layer (16). Then, heat treatment is performed to the substrate. The final temperature drop in the heat treatment process is carried out in the atmosphere that contains water vapor. After that, the Cr electrode layer (20) is formed to complete the MIM nonlinear device (50). By conducting the heat treatment in the atmosphere that contains water vapor, the nonlinear characteristics of the MIM device can be improved as well as the improvement of the resistance characteristic in the OFF state.
    • PCT No.PCT / JP96 / 00903 Sec。 371日期1996年11月29日第 102(e)1996年11月29日PCT PCT 1996年4月1日PCT公布。 第WO96 / 30953号公报 日期:1996年10月3日在具有Ta电极层(16),阳极氧化膜(18)和Cr电极层(20)的MIM非线性器件(50)的制造方法中,钽氧化膜(14) 形成在透明基板(12)上。 在钽氧化膜(14)上形成Ta电极层(16),在Ta电极层(16)上形成阳极氧化膜(18)。 然后,对基板进行热处理。 热处理过程中的最终温度下降在含有水蒸汽的气氛中进行。 之后,形成Cr电极层(20),以完成MIM非线性装置(50)。 通过在含有水蒸气的气氛中进行热处理,可以提高MIM装置的非线性特性,以及提高OFF状态下的电阻特性。