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    • 2. 发明申请
    • Charge pumping circuit
    • 充电泵电路
    • US20070183175A1
    • 2007-08-09
    • US11637687
    • 2006-12-13
    • Shiro SakiyamaYusuke TokunagaShiro DoshoToru IwataTakashi Hirata
    • Shiro SakiyamaYusuke TokunagaShiro DoshoToru IwataTakashi Hirata
    • H02M7/00
    • H02M3/07H03L7/0895H03L7/0896
    • A charge pumping circuit includes a first switch for controlling one of push and pull operations in accordance with a first control signal; a current mirror circuit constructed from transistors each having a different polarity from the first switch; a second switch for controlling current input to the current mirror circuit in accordance with a second control signal, the second switch being constructed from a transistor having the same characteristic as a transistor used for constructing the first switch; a first MOS capacitor one end of which is connected to an input side of the current mirror circuit; a second MOS capacitor receiving, at one end thereof, a current concerned with the push and pull operations; and a voltage buffer connected to the first and second MOS capacitors. The other of the push and pull operations is performed with an output current of the current mirror circuit.
    • 电荷泵浦电路包括:第一开关,用于根据第一控制信号控制推挽操作中的一个; 由与所述第一开关具有不同极性的晶体管构成的电流镜电路; 第二开关,用于根据第二控制信号控制到电流镜电路的电流输入,第二开关由具有与用于构造第一开关的晶体管相同的特性的晶体管构成; 第一MOS电容器,其一端连接到电流镜电路的输入侧; 在其一端接收与推挽操作有关的电流的第二MOS电容器; 以及连接到第一和第二MOS电容器的电压缓冲器。 推挽操作中的另一个用电流镜电路的输出电流进行。
    • 6. 发明授权
    • Semiconductor integrated circuit with voltage-detecting circuit and signal transmitting and receiving system
    • 具有电压检测电路和信号发射和接收系统的半导体集成电路
    • US06944003B2
    • 2005-09-13
    • US10365527
    • 2003-02-13
    • Hirokazu SugimotoTakashi HirataHironori AkamatsuToru IwataSatoshi Takahashi
    • Hirokazu SugimotoTakashi HirataHironori AkamatsuToru IwataSatoshi Takahashi
    • G01R31/28H01L21/66H02H9/04H02H3/24
    • H02H9/046
    • A first semiconductor integrated circuit is connected to a second semiconductor integrated circuit with a cable. In the first semiconductor integrated circuit, when a power supply voltage becomes less than a set voltage detection level, a voltage-detecting circuit outputs a voltage-detected signal to lower the voltage of the cable and to stop the operation. The second semiconductor integrated circuit detects the decrease in the voltage of the cable to recognize the halt of the operation of the first semiconductor integrated circuit. In the first semiconductor integrated circuit thus configured, in testing the operation under low-voltage conditions in which the power supply voltage is less than the set voltage detection level, the voltage-detecting circuit receives a control signal from an external terminal to stop the operation forcibly. Consequently, even when the power supply voltage is made lower than the set voltage-detecting level, the first semiconductor integrated circuit properly operates until the power supply voltage reaches a predetermined lower limit of operating voltage. Thus, evaluation of operation is possible under low-voltage conditions.
    • 第一半导体集成电路通过电缆连接到第二半导体集成电路。 在第一半导体集成电路中,当电源电压变得小于设定电压检测电平时,电压检测电路输出电压检测信号来降低电缆的电压并停止工作。 第二半导体集成电路检测电缆的电压的降低以识别第一半导体集成电路的操作停止。 在这样配置的第一半导体集成电路中,在电源电压小于设定电压检测电平的低电压条件下进行测试时,电压检测电路从外部端子接收控制信号,停止动作 强制。 因此,即使电源电压低于设定电压检测电平,第一半导体集成电路也可以正常工作,直到电源电压达到预定的工作电压下限。 因此,在低电压条件下可以进行运行评估。
    • 7. 发明申请
    • Semiconductor integrated circuit and signal sending/receiving system
    • 半导体集成电路和信号发送/接收系统
    • US20050024084A1
    • 2005-02-03
    • US10855351
    • 2004-05-28
    • Takashi HirataToru Iwata
    • Takashi HirataToru Iwata
    • G05F1/56H04L25/02H03K19/003
    • H04L25/0278G05F1/56H04L25/028H04L25/0292
    • A terminal resistor built in a signal-sending or signal-receiving semiconductor integrated circuit is composed of a parallel circuit of a polysilicon resistor element having excellent frequency characteristic and a P-type MOS transistor. The resistance value of the polysilicon resistor element is set so as to be an approximate value of the characteristic impedance of a transmission line to be connected. The gate voltage of the P-type MOS transistor is controlled by a gate bias voltage adjustment circuit. The resistance value of the P-type MOS transistor is variably adjusted. Variation in the resistance value of the polysilicon resistor element due to dispersion in its manufacturing process is absorbed by variably adjusting the resistance value of the P-type MOS transistor. The combined resistance value of the polysilicon resistor element and the P-type MOS transistor is adjusted with high precision just to the characteristic impedance of the transmission line. Thus, a signal-sending or signal-receiving semiconductor integrated circuit in which the terminal resistor having excellent frequency and DC characteristics is built can be obtained.
    • 内置在信号发送或信号接收半导体集成电路中的端子电阻由具有优异频率特性的多晶硅电阻元件和P型MOS晶体管的并联电路组成。 将多晶硅电阻元件的电阻值设定为要连接的传输线的特性阻抗的近似值。 P型MOS晶体管的栅极电压由栅极偏置电压调节电路控制。 可变地调节P型MOS晶体管的电阻值。 通过可变地调节P型MOS晶体管的电阻值来吸收由于其制造过程中的分散而导致的多晶硅电阻元件的电阻值的变化。 与传输线的特性阻抗相比,多晶硅电阻元件和P型MOS晶体管的组合电阻值被高精度地调整。 因此,可以获得其中构建具有优异的频率和DC特性的端子电阻器的信号发送或信号接收半导体集成电路。
    • 8. 发明授权
    • Multi-phase clock transmission circuit and method
    • 多相时钟传输电路及方法
    • US06794912B2
    • 2004-09-21
    • US10361610
    • 2003-02-11
    • Takashi HirataToru Iwata
    • Takashi HirataToru Iwata
    • H03D324
    • H03L7/0805H03K5/133H03K5/1504H03L7/07H03L7/08H03L7/0812H03L7/0814
    • A multi-phase clock transmission circuit includes: a clock generator for generating a clock synchronizing with a reference clock and a control signal responsive to the phase difference between the reference clock and the generated clock; and a delay circuit for generating a multi-phase clock based on the clock and the control signal. The clock generator generates a signal having a frequency equal to an integral multiple of the frequency of the reference clock and outputs the signal as the clock. The delay circuit has a circuit receiving the clock and including a plurality of delay elements in cascade connection each giving a delay according to the control signal to an input signal. Signals output from the plurality of delay elements are used as signals constituting the multi-phase clock.
    • 多相时钟传输电路包括:时钟发生器,用于响应于参考时钟和所产生的时钟之间的相位差,产生与参考时钟同步的时钟和控制信号; 以及用于基于时钟和控制信号产生多相时钟的延迟电路。 时钟发生器产生具有等于参考时钟的频率的整数倍的频率的信号,并将该信号作为时钟输出。 延迟电路具有接收时钟并且包括多个级联连接的延迟元件的电路,每个延迟元件根据与输入信号的控制信号给出延迟。 将从多个延迟元件输出的信号用作构成多相时钟的信号。
    • 10. 发明授权
    • Skewing-suppressive output buffer circuit
    • 偏移抑制输出缓冲电路
    • US6073245A
    • 2000-06-06
    • US234708
    • 1999-01-21
    • Takashi HirataToru Iwata
    • Takashi HirataToru Iwata
    • G06F5/06G06F1/12
    • G06F5/06
    • In an output buffer circuit, an input signal is transmitted through a bus by way of a latch circuit and a driver. A stable-state interval detector detects an interval during which the input signal remains in the same logical state. If the stable-state interval detected is relatively short, a drivability controller controls the drivability of the driver at a normal value. To the contrary, if the interval detected is relatively long, the controller increases the drivability of the driver. In general, if the stable-state interval of an input signal is relatively long, then the time taken for the subsequent logical state transition of the signal tends to be longer as compared with a signal having a shorter stable-state interval. However, if the drivability of the driver is increased, then the state transition time is shortened, and substantially equalized with that of a signal having a relatively short stable-state interval. As a result, signal skewing can be minimized.
    • 在输出缓冲电路中,输入信号通过一个总线通过一个锁存电路和一个驱动器传输。 稳态区间检测器检测输入信号保持在相同逻辑状态的间隔。 如果检测到的稳态间隔相对较短,则驾驶员控制器将驾驶员的驾驶性能控制在正常值。 相反,如果检测到的间隔相对较长,则控制器增加驾驶员的驾驶性能。 一般来说,如果输入信号的稳态间隔相对较长,则与具有较短稳态间隔的信号相比,信号的后续逻辑状态转换所花费的时间趋于变长。 然而,如果驾驶员的驾驶性能增加,则状态转移时间缩短,并且与具有相对较短的稳态间隔的信号基本相等。 结果,信号偏移可以最小化。