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1. 发明授权

US5362683A Method of making epitaxial wafers 失效
标题翻译：制造外延片的方法
公开(公告)号：US5362683A
公开(公告)日：1994-11-08
申请号：US205558
申请日：1994-03-04
申请人： Takao Takenaka , Masahisa Endo , Masato Yamada
发明人： Takao Takenaka , Masahisa Endo , Masato Yamada
IPC分类号： C30B19/00 , H01L21/20 , H01L21/208 , H01L21/304 , H01L21/302
CPC分类号： H01L21/304 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02625 , H01L21/02628 , Y10S117/915
摘要： To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.
摘要翻译：通过有效的外延生长工艺以更低的成本制造具有更少量的半导体晶体的外延晶片。通过外延生长，通过在晶体平面取向为{100}的GaAs衬底晶片的两侧上形成具有相同结构的GaAlAs层来制造外延晶片。然后将外延晶片在GaAs衬底晶片部分中分成两片，以获得两个外延晶片。为了进行外延生长处理，将多个GaAs衬底晶片保持在其边缘，然后将GaAs衬底晶片以规定的空间间隔放置在Ga溶液中。为了将GaAs衬底部分中的外延晶片分成两片，平行于主表面切割衬底晶片部分。或者，也可以通过蚀刻去除GaAs衬底晶片，同时外延晶片在蚀刻溶液中以高速旋转。

2. 发明授权

US5366552A Apparatus for liquid-phase epitaxial growth 失效
标题翻译：液相外延生长装置
公开(公告)号：US5366552A
公开(公告)日：1994-11-22
申请号：US897169
申请日：1992-06-11
申请人： Masato Yamada , Takao Takenaka , Masahisa Endo
发明人： Masato Yamada , Takao Takenaka , Masahisa Endo
IPC分类号： C30B19/06 , H01L21/208
CPC分类号： C30B19/061
摘要： A method and an apparatus capable of efficiently producing an epitaxial layer grown at one time on a multiplicity of substrates with uniform thickness and quality are disclosed, in which a sealable growth chamber filled in a solution used to achieve liquid-phase epitaxial growth and holding therein at least one row of thin plate-like substrate is turned about the horizontal axis. The growth chamber is tilted or overturned so that the solution in the growth chamber is stirred homogeneously and the effect of gravity on the solution is excluded. A solution chamber for holding therein the solution is connected with the growth chamber via a gate valve. After the liquid-phase epitaxial growth, the growth chamber is overturned and then the gate valve is opened so that the solution in the growth chamber returns to the solution chamber. Thus, reuse of the solution is possible.
摘要翻译：公开了一种能够有效地制造在多个均匀厚度和质量的基板上一次生长的外延层的方法和装置，其中填充有用于实现液相外延生长和保持在其中的溶液的可密封的生长室至少一排薄板状基板围绕水平轴转动。生长室倾斜或翻转，使得生长室中的溶液均匀搅拌，排除重力对溶液的影响。用于保持溶液的溶液室通过闸阀与生长室连接。在液相外延生长之后，生长室被翻转，然后打开闸阀，使得生长室中的溶液返回溶液室。因此，解决方案的重用是可能的。

3. 发明授权

US06847056B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US06847056B2
公开(公告)日：2005-01-25
申请号：US10240101
申请日：2002-01-29
申请人： Nobuhiko Noto , Masato Yamada , Masahisa Endo , Hitoshi Ikeda , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Nobuhiko Noto , Masato Yamada , Masahisa Endo , Hitoshi Ikeda , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L33/32 , H01L33/42 , H01L33/00
CPC分类号： H01L33/42 , H01L33/0079
摘要： A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.
摘要翻译：发光器件100具有以下结构：作为电极接触层的ap型InGaAs层7和作为氧化物透明电极层的ITO电极层8按照发光层部分的第一主表面17侧的顺序形成在发光层部分24的第二主表面18侧，依次形成作为电极接触层的n型InGaAs层9和作为氧化物透明电极层的ITO电极层10。在发光层部分24的两个主表面17和18上形成ITO电极层8和10以及p型InGaAs层7和n型InGaAs层9，以覆盖相应的两个主表面17 全部为18。

4. 发明授权

US5585305A Method for fabricating a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5585305A
公开(公告)日：1996-12-17
申请号：US249197
申请日：1994-05-26
申请人： Masato Yamada , Takao Takenaka
发明人： Masato Yamada , Takao Takenaka
IPC分类号： H01L21/22 , H01L21/223 , H01L33/00 , H01L33/30
CPC分类号： H01L33/305 , H01L21/2205 , H01L21/2233 , H01L33/0062 , Y10S148/099
摘要： A method for fabricating a semiconductor device includes the steps of growing a second semiconductor layer on a first semiconductor layer which is highly doped with an impurity such as Zn and diffusing the impurity concurrently with the growing step of the second semiconductor layer from the first semiconductor layer as an impurity source to the second semiconductor layer to have a predetermined carrier concentration profile, by controlling both the diffusing speed of said impurity and the growing speed of said second semiconductor layer by changing the temperature in accordance with a predetermined sequence to have a predetermined carrier concentration profile in the second semiconductor layer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在第一半导体层上生长第二半导体层，该第一半导体层高度掺杂有诸如Zn的杂质，并且与第二半导体层的生长步骤同时从第一半导体层扩散杂质作为第二半导体层的杂质源以通过根据预定的顺序改变温度来控制所述杂质的扩散速度和所述第二半导体层的生长速度，以具有预定的载流子浓度分布，以具有预定的载流子第二半导体层中的浓度分布。

5. 发明授权

US5401684A Method of manufacturing a light-emitting semiconductor device substrate 失效
标题翻译：制造发光半导体器件基板的方法
公开(公告)号：US5401684A
公开(公告)日：1995-03-28
申请号：US984920
申请日：1992-12-02
申请人： Masato Yamada , Takao Takenaka , Shinji Orimo
发明人： Masato Yamada , Takao Takenaka , Shinji Orimo
IPC分类号： H01L21/208 , H01L33/00 , H01L33/30 , H01L33/40
CPC分类号： H01L33/0025 , H01L33/0062 , Y10S148/101 , Y10S148/135 , Y10S438/955
摘要： Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga.sub.1-x Al.sub.x As compound semiconductor single crystalline thick-film layer having a first AlAs mole fraction and a low Al containing and oxidation-delaying Ga.sub.1-y Al.sub.y As compound semiconductor single crystalline thin film serving as a surface protective layer and having a second AlAs mole fraction to be sequentially grown on a GaAs crystal substrate. The method comprises the step of causing the thick-film layer and the thin film to be sequentially grown on the GaAs crystal substrate. The GaAs crystal substrate is removed after sequential epitaxial growth of the thick-film layer and thin film on the GaAs crystal substrate.
摘要翻译：公开了一种发光半导体器件基板及其制造方法。通过使具有第一AlAs摩尔分数的Ga 1-x Al x As化合物半导体单晶厚膜层和作为表面保护层的低Al含量和氧化延迟Ga 1-y Al y As化合物半导体单晶薄膜制备基板，并具有在GaAs晶体衬底上顺序生长的第二AlAs摩尔分数。该方法包括使厚膜层和薄膜依次生长在GaAs晶体基板上的步骤。在GaAs晶体衬底上的厚膜层和薄膜的顺序外延生长之后，去除GaAs晶体衬底。

6. 发明授权

US5254172A Rotating furnace tube having a non-rotating slidable work holder for processing semiconductor substrates 失效
标题翻译：旋转炉管具有用于处理半导体衬底的非旋转滑动工件保持器
公开(公告)号：US5254172A
公开(公告)日：1993-10-19
申请号：US854037
申请日：1992-03-19
申请人： Toshio Otaki , Hitoshi Ikeda , Masato Yamada , Takao Takenaka
发明人： Toshio Otaki , Hitoshi Ikeda , Masato Yamada , Takao Takenaka
IPC分类号： F27B7/20 , C30B19/06 , H01L21/00 , H01L21/208 , H01L21/22 , H01L21/31 , B08B3/04 , B05D7/24
CPC分类号： H01L21/67023 , C30B19/061
摘要： An semiconductor substrate processing apparatus of the type including a furnace tube associated with a fluid supply unit and a fluid discharge unit, wherein the furnace tube is rotatably supported by pairs of confronting rollers and rotated by a motor under the control of a controller in order to achieve various kinds of processing of semiconductor substrates within the furnace tube. With this rotatable furnace tube, the apparatus exhibits high radial temperature uniformity and is able to prevent deformation of the furnace tube.

7. 发明授权

US5323027A Light emitting device with double heterostructure 失效
标题翻译：具有双异质结构的发光器件
公开(公告)号：US5323027A
公开(公告)日：1994-06-21
申请号：US889372
申请日：1992-05-29
申请人： Masato Yamada , Takao Takenaka
发明人： Masato Yamada , Takao Takenaka
IPC分类号： H01L33/00 , H01L33/30
CPC分类号： H01L33/305 , H01L33/0025
摘要： In a light emitting device comprising a first clad layer composed of a mixed crystal compound semiconductor of first type conductivity, an active layer composed of a mixed crystal compound semiconductor of first type conductivity which has the mixed crystal ratio required to emit the prescribed wavelength, and a second clad layer composed of a mixed crystal compound semiconductor of second type conductivity which has a mixed crystal ratio equivalent to that of the first clad layer, the active layer is sandwiched by the first and second clad layers and forms the double hetero structure with the first and second clad layers, and the carrier concentration in the first clad layer near the junction with the active layer was made to be 5.times.10.sup.16 cm.sup.-3 or less. The carrier concentration in the active layer is preferably 1.times.10.sup.17 cm.sup.-3 or less, and the carrier concentration in the second clad layer is preferably 5.times.10.sup.16 cm.sup.-3 or more.
摘要翻译：在包括由第一类型的导电性的混合晶体化合物半导体构成的第一覆盖层的发光器件中，由具有发射规定波长的混合晶体比的第一导电类型的混晶化合物半导体构成的有源层，以及由第二导电率的混晶化合物半导体构成的第二覆层，其具有与第一覆层相当的混晶比，有源层由第一和第二覆层夹在第二覆层中，并形成双异质结构第一和第二包层，并且与有源层的接合点附近的第一包层中的载流子浓度为5×1016 cm -3以下。活性层中的载流子浓度优选为1×10 17 cm -3以下，第二覆盖层中的载流子浓度优选为5×1016cm-3以上。

8. 发明授权

US4905058A Light-emitting semiconductor device 失效
标题翻译：发光半导体器件
公开(公告)号：US4905058A
公开(公告)日：1990-02-27
申请号：US226542
申请日：1988-08-01
申请人： Masato Yamada , Shinji Orimo , Takao Takenaka
发明人： Masato Yamada , Shinji Orimo , Takao Takenaka
IPC分类号： H01L33/30 , H01L33/40
CPC分类号： H01L33/025 , H01L33/0025
摘要： In a light-emitting semiconductor device of double heterostructure consisting of GaAlAs mixed crystal, a film of Ga.sub.1-y Al.sub.y As having a thickness less than 1 .mu.m is sandwiched in between a p-type clad layer of mixed crystal Ga.sub.1-x1 Al.sub.xl As and an n-type clad layer of mixed crystal Ga.sub.1-z Al.sub.z AS, whereby the wavelength of the emitted light is stabilized, and the thyristor phenomenon is curbed in the n-type clad layer, and at the same time the p-type carrier concentration is increased in the growth layer or in the substrate.

9. 发明申请

US20120287990A1 IMAGE PROCESSOR 有权
标题翻译：图像处理器
公开(公告)号：US20120287990A1
公开(公告)日：2012-11-15
申请号：US13522122
申请日：2010-11-29
申请人： Toshimitsu Tatsuka , Hiromu Hasegawa , Takeaki Komuro , Masato Yamada
发明人： Toshimitsu Tatsuka , Hiromu Hasegawa , Takeaki Komuro , Masato Yamada
IPC分类号： H04N7/12
CPC分类号： H04N19/174 , H04N19/124 , H04N19/147 , H04N19/149 , H04N19/196 , H04N19/61
摘要： An image processor includes an encoder that performs encoding including quantization on an image signal and a controller that controls a quantization parameter for quantization. The controller determines a quantization parameter of a currently target macroblock as an increase or decrease from a reference value, and determines the increase or decrease based on a difference between a target amount of code for a predetermined number of macroblocks fewer than a total number of macroblocks within one frame and a generated amount of code of the predetermined number of macroblocks processed immediately before. The controller can further determine the increase or decrease, based on pixel information of the currently target macroblock such as an activity evaluation value.
摘要翻译：图像处理器包括编码器，该编码器执行包括对图像信号的量化的编码以及控制量化量化参数的控制器。控制器根据参考值确定当前目标宏块的量化参数为增加或减小，并且基于小于总宏块数的预定数量的宏块的目标代码量之间的差确定增加或减小并且在紧接着之前处理预定数量的宏块的生成的代码量。控制器可以基于诸如活动评估值的当前目标宏块的像素信息来进一步确定增加或减少。

10. 发明申请

US20110051209A1 BEAM IRRADIATION APPARATUS AND LASER RADAR 审中-公开
标题翻译：光束辐射装置和激光雷达
公开(公告)号：US20110051209A1
公开(公告)日：2011-03-03
申请号：US12869312
申请日：2010-08-26
申请人： Masato Yamada , Takaaki Morimoto , Yoichiro Goto
发明人： Masato Yamada , Takaaki Morimoto , Yoichiro Goto
IPC分类号： G02B26/10
CPC分类号： G02B26/101 , B60T7/22 , G01S7/4814 , G01S7/4817 , G01S17/10 , G01S17/42
摘要： A beam irradiation apparatus includes a light source which outputs a laser beam, a convergent lens into which the laser beam output from the light source is entered, and a scanning portion which makes the laser beam transmitted through the convergent lens scan on a target region. In the beam irradiation apparatus, the laser light source is arranged such that a pn junction surface of a laser chip is parallel with the vertical direction. Length of the laser beam in the vertical direction on the target region is set by length of a light emitting portion of the laser light source in the vertical direction. Further, a wavefront aberration of the convergent lens with respect to the laser beam is set to be 0.15 λrms or less.
摘要翻译：束照射装置包括输出激光束的光源，从光源输出的激光束入射到的会聚透镜，以及使激光束通过会聚透镜扫描的目标区域的扫描部。在光束照射装置中，激光光源被配置为使得激光芯片的pn结面与垂直方向平行。目标区域上的垂直方向上的激光束的长度由激光光源的发光部分的垂直方向的长度来设定。此外，会聚透镜相对于激光束的波前像差被设定为0.15λrms以下。

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