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1. 发明授权

US5346869A Sintered silicon nitride bodies suitable for use as high impact materials 失效
标题翻译：适用于高冲击材料的烧结氮化硅体
公开(公告)号：US5346869A
公开(公告)日：1994-09-13
申请号：US175490
申请日：1993-12-29
申请人： Takao Nishioka , Takehisa Yamamoto , Kenji Matsunuma , Akira Yamakawa , Masaya Miyake
发明人： Takao Nishioka , Takehisa Yamamoto , Kenji Matsunuma , Akira Yamakawa , Masaya Miyake
IPC分类号： C04B35/584 , C04B35/593 , C04B35/597 , F01L1/20 , F02B3/06 , F02F7/00 , C04B35/58
CPC分类号： C04B35/584 , C04B35/5935 , C04B35/597 , F01L1/205 , F02F7/0087 , F02B3/06 , F05C2203/0895
摘要： Described are sintered silicon nitride bodies useful as materials for parts required to have strength, especially excellent impact strength for items such as automobile parts and machine parts. The sintered Si.sub.3 N.sub.4 bodies contain 80-98 wt. % of silicon nitride and have a porosity not higher than 3% and an shock compressive elasticity limit of at least 15 GPa.
摘要翻译：描述了可用作对于诸如汽车部件和机器部件的物品具有强度，特别优异的冲击强度的部件的材料的烧结氮化硅体。烧结的Si 3 N 4体含有80-98wt。％的氮化硅，并且具有不高于3％的孔隙率和至少15GPa的冲击压缩弹性极限值。

2. 发明授权

US4769350A Silicon nitride sintered material for cutting tools and process for making the same 失效
标题翻译：用于切削刀具的氮化硅烧结材料及其制造方法
公开(公告)号：US4769350A
公开(公告)日：1988-09-06
申请号：US102922
申请日：1987-09-30
申请人： Takao Nishioka , Akira Yamakawa , Masaya Miyake
发明人： Takao Nishioka , Akira Yamakawa , Masaya Miyake
IPC分类号： C04B35/584 , C04B35/593 , C04B35/58
CPC分类号： C04B35/584 , C04B35/593
摘要： A silicon nitride sintered material for cutting tools comprising from about 3 to 10 wt % of partially stablized zirconium oxide, from about 1 to 5 wt % of aluminum oxide, and from about 1 to 10 wt % of yttrium oxide, the balance being silicon nitride, and the process for making the same.

3. 发明授权

US5204297A Silicon nitride sintered body and process for producing the same 失效
标题翻译：硅氮化物烧结体及其制造方法
公开(公告)号：US5204297A
公开(公告)日：1993-04-20
申请号：US825989
申请日：1992-01-27
申请人： Takehisa Yamamoto , Takao Nishioka , Kenji Matsunuma , Akira Yamakawa , Masaya Miyake
发明人： Takehisa Yamamoto , Takao Nishioka , Kenji Matsunuma , Akira Yamakawa , Masaya Miyake
IPC分类号： C04B35/593 , C04B35/597
CPC分类号： C04B35/5935 , C04B35/597
摘要： The present invention relates to a silicon nitride sintered body [wherein the composition of Si.sub.3 N.sub.4 -first aid (Y.sub.2 O.sub.3 +MgO)-second aid (at least one of Al.sub.2 O.sub.3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.-Si.sub.3 N.sub.4 and .beta.'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300.degree. to 1700.degree. C. so that the relative density reaches 96% or more, and the precipitation ratio of the .alpha.-Si.sub.3 N.sub.4 crystal phases to the .beta.'-sialon crystal phase in the sintered body is in the range of from 40:60 to 80:20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300.degree. to 1700.degree. C. so that the relative density reaches 98% or more. The sintered body has superior strength properties, especially at ordinary temperatures, and can be produced with a high productivity in a high yield at a low cost.

4. 发明授权

US5173458A Silicon nitride sintered body and process for producing the same 失效
标题翻译：硅氮化物烧结体及其制造方法
公开(公告)号：US5173458A
公开(公告)日：1992-12-22
申请号：US810723
申请日：1991-12-18
申请人： Takao Nishioka , Kenji Matsunuma , Koichi Sogabe , Tomoyuki Awatsu , Masaya Miyake , Takehisa Yamamoto , Akira Yamakawa
发明人： Takao Nishioka , Kenji Matsunuma , Koichi Sogabe , Tomoyuki Awatsu , Masaya Miyake , Takehisa Yamamoto , Akira Yamakawa
IPC分类号： C04B35/593
CPC分类号： C04B35/5935
摘要： Disclosed is a silicon nitride sintered body produced by subjecting a green compact of a mixed powder composed of 1) a silicon nitride powder having a percentage .alpha. crystallization of 93% or more and a mean grain diameter of 0.7 .mu.m or less and 2) 5 to 15% by weight in total of a first sintering aid selected from among rare earth element, yttrium oxide and lanthanide oxides and a second sintering aid consisting of aluminum oxide or nitride and at least one selected from among oxides and nitrides of Mg, Ca and Li, to primary sintering in a nitrogen gas atmosphere under a pressure of 1.1 atm or less at 1500.degree. to 1700.degree. C.; and subjecting the sintered body to secondary sintering in a nitrogen gas atmosphere under a pressure of 10 atm or more at the primary sintering temperature or below, thereby giving a sintered body wherein the relative density of the sintered body is 99% or more and the precipitation ratio of an .alpha.-Si.sub.3 N.sub.4 (including .beta.'-sialon) crystal phase ranges from 1:3 to 1:8 in terms of the peak intensity ratio in X-ray diffraction.

5. 发明授权

US4764490A Process for preparation of sintered silicon nitride 失效
标题翻译：烧结氮化硅的制备方法
公开(公告)号：US4764490A
公开(公告)日：1988-08-16
申请号：US849330
申请日：1986-04-08
申请人： Akira Yamakawa , Masaya Miyake , Takao Nishioka
发明人： Akira Yamakawa , Masaya Miyake , Takao Nishioka
IPC分类号： C04B35/626 , C04B35/584 , C04B35/593 , C04B35/58
CPC分类号： C04B35/584 , C04B35/5935
摘要： Disclosed is a process for preparation of a sintered silicon nitride. The process comprises the steps of:mixing a powder of silicon nitride with a powder of a sintering agent;compacting the obtained mixture; andsintering the compacted mixture in a non-oxidizing atmosphere.The feature of the process is that the powder of the sintering agent includes a powder mixture of oxide and/or hydroxide of at least two kinds of metals which has been prepared by co-precipitation.Due to the use of the co-precipitated powder as the sintering agent, it is possible to obtain a sintered silicon nitride having an excellent strength and uniformity in quality. The obtained sintered silicon nitride is preferably used as an engineering ceramic.
摘要翻译：公开了一种制备氮化硅烧结体的方法。该方法包括以下步骤：将氮化硅粉末与烧结剂粉末混合; 压实得到的混合物; 并在非氧化气氛中烧结压实的混合物。该方法的特征在于，烧结剂的粉末包含通过共沉淀制备的至少两种金属的氧化物和/或氢氧化物的粉末混合物。由于使用共沉淀粉末作为烧结剂，可以获得质量优异的强度和均匀性的烧结氮化硅。得到的烧结氮化硅优选用作工程陶瓷。

6. 发明授权

US5275772A Silicon nitride sintered body and process for producing the same 失效
标题翻译：氮化硅烧结体及其制造方法
公开(公告)号：US5275772A
公开(公告)日：1994-01-04
申请号：US957506
申请日：1992-10-05
申请人： Takehisa Yamamoto , Takao Nishioka , Kenji Matsunuma , Akira Yamakawa , Masaya Miyake
发明人： Takehisa Yamamoto , Takao Nishioka , Kenji Matsunuma , Akira Yamakawa , Masaya Miyake
IPC分类号： C04B35/593 , C04B35/597 , C04B35/58
CPC分类号： C04B35/5935 , C04B35/597
摘要： The present invention relates to a silicon nitride sintered body [wherein the composition of Si.sub.3 N.sub.4 -first aid (Y.sub.2 O.sub.3 +MgO)-second aid (at least one of Al.sub.2 O.sub.3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.-Si.sub.3 N.sub.4 and .beta.'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 96% or more, and the precipitation ratio of the .alpha.-Si.sub.3 N.sub.4 crystal phases to the .beta.'-sialon crystal phase in the sintered body is in the range of from 40:60 to 80:20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 98% or more. The sintered body has superior strength properties, especially at ordinary temperatures, and can be produced with a high productivity in a high yield at a low cost.
摘要翻译：本发明涉及一种氮化硅烧结体[其中，Si 3 N 4 - 急救（Y 2 O 3 + MgO） - 辅助剂（Al 2 O 3和AlN中的至少一种）的组成]落在由连接点A，B， C和D。如图1所示，烧结体的结晶相含有α-Si 3 N 4和β'-Sialon，相对密度为98％以上。该烧结体是通过使上述源的生坯在1300〜1700℃的氮气气氛中进行一次烧结而制成的，使得相对密度达到96％以上， Si3N4晶相与烧结体中的β' - 赛隆结晶相的比例范围为40:60至80:20; 然后在1300〜1700℃的氮气气氛中使一次烧结体进行二次烧结，使得相对密度达到98％以上。该烧结体具有优异的强度特性，特别是在普通温度下，可以低成本高产率地以高生产率生产。

7. 发明授权

US5776600A Slide member and method of manufacturing the same 失效
标题翻译：滑动构件及其制造方法
公开(公告)号：US5776600A
公开(公告)日：1998-07-07
申请号：US631666
申请日：1996-04-09
申请人： Tetsuya Katayama , Kaoru Murabe , Osamu Komura , Chihiro Kawai , Akira Yamakawa , Kenji Matsunuma , Norio Yasuoka , Matsuo Higuchi , Masaya Miyake
发明人： Tetsuya Katayama , Kaoru Murabe , Osamu Komura , Chihiro Kawai , Akira Yamakawa , Kenji Matsunuma , Norio Yasuoka , Matsuo Higuchi , Masaya Miyake
IPC分类号： C04B35/01 , C04B35/584 , C04B35/593 , C04B41/00 , C04B41/80 , F16C33/04 , F16C33/16 , C04B35/587
CPC分类号： C04B41/009 , C04B35/01 , C04B35/584 , C04B35/593 , C04B35/5935 , C04B41/0072 , C04B41/80 , F16C33/043 , F16C33/16 , C04B2111/00353 , Y10T428/252 , Y10T428/2991 , Y10T428/30
摘要： A slide member has a sliding surface made of ceramic and a has surface roughness of not more than 1.0 .mu.m in center line average roughness Ra. The ceramics includes a silicon nitride sintered body which contains crystal grains having a linear density of at least 35 per 30 .mu.m in length with a boundary phase volume ratio of not more than 15 volume %, and which contains pores of not more than 20 .mu.m in maximum diameter in a content of not more than 3%. In a method of manufacturing the slide member, it is possible to ensure smoothness of the sliding surface by grinding the sliding surface and thereafter heating the ceramic in an either an inert gas or atmospheric air. A slide member that can be used under severe sliding conditions of high-speed sliding or the like and that has excellent wear resistance is obtained. Even if the slide member is used for to a sliding part of a compressor or the like which employs a fluorocarbon containing no chlorine as a cooling medium, it is possible to prevent the occurrence of seizure and abnormal wear on the sliding surface.
摘要翻译：滑动构件具有由陶瓷制成的滑动面，并且在中心线平均粗糙度Ra中具有不大于1.0μm的表面粗糙度。陶瓷包括氮化硅烧结体，其包含长度为30μm以上的线密度为35以上，边界相体积比为15体积％以下且含有不大于20μm的孔的晶粒 m最大直径，含量不超过3％。在制造滑动构件的方法中，可以通过研磨滑动表面并随后在惰性气体或大气中加热陶瓷来确保滑动表面的平滑度。可以获得可以在高速滑动等的严酷滑动条件下使用且具有优异的耐磨性的滑动构件。即使将滑动部件用于使用不含氯的氟碳化合物的压缩机等的滑动部作为冷却介质，也可以防止滑动面发生卡滞和异常磨损。

8. 发明授权

US5603788A Method of manufacturing a ceramics-type vacuum vessel 失效
标题翻译：制造陶瓷型真空容器的方法
公开(公告)号：US5603788A
公开(公告)日：1997-02-18
申请号：US457013
申请日：1995-06-01
申请人： Tetsuya Abe , Yoshio Murakami , Hisao Takeuchi , Akira Yamakawa , Masaya Miyake
发明人： Tetsuya Abe , Yoshio Murakami , Hisao Takeuchi , Akira Yamakawa , Masaya Miyake
IPC分类号： C04B37/00 , F16J12/00 , H05H7/14 , B32B31/12 , B32B31/26
CPC分类号： H05H7/14
摘要： A vacuum vessel is provided in which the majority of a vessel wall including an annular wall portion (1) and a plate-wall portion (2) is formed of ceramic material such as silicon nitride, for example. To bond the plural wall members together, bonding faces having a surface flatness of not more than 1 .mu.m are prepared thereon, and then a ceramic powder bonding substance with an average particle diameter of not more than 1 .mu.m is interposed between adjacent bonding faces and subjected to heating. Because the generation of gas, such as hydrogen, from the wall of the ceramic vessel is reduced, extremely high vacuum can be generated and maintained in the interior of the vacuum vessel. Also, because the wall of the vacuum vessel has a high permeability with respect to a magnetic field and an electric field, the vacuum vessel can be used as a vessel in a particle accelerator that allows the high precision control of charged particles therein by means of an electromagnetic field.
摘要翻译：提供一种真空容器，其中包括环形壁部分（1）和板壁部分（2）的容器壁的大部分由诸如氮化硅的陶瓷材料形成。为了将多个壁构件结合在一起，在其上制备具有不大于1μm的表面平坦度的接合面，然后将平均粒径不大于1μm的陶瓷粉末粘合物置于相邻的接合面并进行加热。因为从陶瓷容器的壁产生气体，例如氢气，所以可以在真空容器的内部产生极高的真空度并维持真空。此外，由于真空容器的壁相对于磁场和电场具有高磁导率，所以真空容器可以用作粒子加速器中的容器，其允许通过以下方式对带电粒子进行高精度控制：电磁场。

9. 发明授权

US5273700A Aluminum nitride sintered body and process for producing the same 失效
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US5273700A
公开(公告)日：1993-12-28
申请号：US838800
申请日：1992-03-16
申请人： Akira Yamakawa , Kouiti Sogabe , Kohei Shimoda , Masaya Miyake
发明人： Akira Yamakawa , Kouiti Sogabe , Kohei Shimoda , Masaya Miyake
IPC分类号： C04B35/581 , C04B35/58
CPC分类号： C04B35/581
摘要： An aluminum nitride sintered body characterized by comprising aluminum nitride as the main component, containing a titanium compound, and having a black color, a transmittance of 10% or less with the light having a wavelength in the range of from 500 to 650 nm and a heat conductivity of 120 W/m.multidot.K or more. The sintered body is produced by adding 0.05 to 5% by weight, in terms of Ti, of a titanium compound and a sintering aid compound and, if necessary, a compound capable of forming carbon after being thermally decomposed to an aluminum nitride powder, molding the mixture, heating the molding in vacuo, air or a nitrogen gas, a hydrogen gas or an atmosphere comprising a mixture of these gases until the residual carbon content is reduced to 2.0% by weight or less, and sintering the heat-treated mixture in a nonoxidizing atmosphere containing nitrogen at 1600.degree. C. or above. The titanium compound is Ti.sub.n O.sub.2n-1 or a solid solution comprising Ti.sub.n O.sub.2n-1 and nitrogen partly dissolved therein in the solid solution form wherein n is 1 or more, or a compound represented by the formula TiN.sub.x O.sub. y wherein 0

10. 发明授权

US5264388A Sintered body of aluminum nitride 失效
标题翻译：氮化铝烧结体
公开(公告)号：US5264388A
公开(公告)日：1993-11-23
申请号：US824746
申请日：1992-01-17
申请人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Koichi Sogabe
发明人： Akira Yamakawa , Masaya Miyake , Hitoyuki Sakanoue , Koichi Sogabe
IPC分类号： C04B35/581 , H01L23/15 , H05K1/03 , C04B35/58
CPC分类号： C04B35/581 , H01L23/15 , H01L2924/0002 , H05K1/0306 , Y10S428/901
摘要： The present invention provides a sintered body of aluminum nitride comprising (i) aluminum nitride as a main component and (ii) at least one component selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd, Ho, Ti, and compounds thereof in the total amounts of not greater than 1.0 wt. % and not less than 0.01 wt. % in terms of elements on the basis of sintered body, the sintered body being colored and having a thermal conductivity of at least 150 W/mK. The sintered body is useful for the preparation of circuit boards having printed circuits thereon and highly heat-releasing ceramic packages for semiconductive devices.
摘要翻译：本发明提供一种氮化铝烧结体，其包含（i）氮化铝作为主要成分，和（ii）选自Zr，Hf，V，Nb，Ta，Cr，Mo，W， Fe，Co，Ni，Nd，Ho，Ti及其化合物的总量不大于1.0wt。％且不小于0.01wt。基于烧结体的元素的％，烧结体着色并具有至少150W / mK的导热率。该烧结体可用于制备其上具有印刷电路的电路板和用于半导体器件的高度散热的陶瓷封装。

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