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1. 发明授权

US06521928B2 Ferroelectric capacitor array and method for manufacturing ferroelectric memory 失效
标题翻译：铁电电容阵列及制造铁电存储器的方法
公开(公告)号：US06521928B2
公开(公告)日：2003-02-18
申请号：US09769262
申请日：2001-06-28
申请人： Takao Nishikawa , Eiji Natori , Katsuyuki Morii
发明人： Takao Nishikawa , Eiji Natori , Katsuyuki Morii
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/0805 , H01L27/11507 , H01L28/55
摘要： The present invention is equipped with a ferroelectric film having concave and convex patterns formed on both sides thereof corresponding to respective electrodes of a plurality of capacitors. A first substrate has first electrodes of the plurality of capacitors formed on one surface thereof. A second substrate has second electrodes of the plurality of capacitors formed on the other surface thereof. First and second anisotropic conduction films are provided between one surface of the ferroelectric film and the first substrate and between the other surface of the ferroelectric film and the second electrode film, respectively, to thereby establish conduction between the convex sections of the ferroelectric film of the capacitors and the electrodes of the capacitors. Since the multiple capacitors can be formed without conducting an etching (lithography) process, damages that may be inflicted on the ferroelectric film when the ferroelectric capacitors are formed can be reduced.
摘要翻译：本发明装备有对应于多个电容器的各个电极的两侧形成有凹凸图案的铁电体膜。第一基板具有在其一个表面上形成的多个电容器的第一电极。第二基板具有在其另一个表面上形成的多个电容器的第二电极。第一和第二各向异性导电膜分别设置在铁电体膜的一个表面和第一基板之间，并且分别设置在铁电体膜和第二电极膜的另一个表面之间，从而在该铁电体膜的凸部之间建立导电电容器和电容器的电极。由于可以在不进行蚀刻（光刻）工艺的情况下形成多个电容器，所以可以减少在形成强电介质电容器时在铁电体膜上产生的损伤。

2. 发明授权

US07169621B2 Ferroelectric memory device 失效
标题翻译：铁电存储器件
公开(公告)号：US07169621B2
公开(公告)日：2007-01-30
申请号：US10780572
申请日：2004-02-19
申请人： Kazumasa Hasegawa , Eiji Natori , Takao Nishikawa , Koichi Oguchi , Tatsuya Shimoda
发明人： Kazumasa Hasegawa , Eiji Natori , Takao Nishikawa , Koichi Oguchi , Tatsuya Shimoda
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11585 , H01L27/1159
摘要： A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and a ferroelectric layer disposed at least in intersection regions between the first signal electrodes and the second signal electrodes, and a peripheral circuit section for selectively writing information into or reading information from the memory cell. The memory cell array and the peripheral circuit section are formed in different layers. The peripheral circuit section is formed in a region outside the memory cell array.
摘要翻译：本发明的铁电体存储装置具备存储单元阵列，其中存储单元配置成具有第一信号电极的矩阵，第二信号电极沿与第一信号电极交叉的方向排列，以及至少设置在交叉区域的铁电层在第一信号电极和第二信号电极之间，以及用于选择性地将信息写入或从存储单元读取信息的外围电路部分。存储单元阵列和外围电路部分形成在不同的层中。外围电路部分形成在存储单元阵列外部的区域中。

3. 发明授权

US06913937B2 Memory cell array having ferroelectric capacity, method of manufacturing the same and ferroelectric memory device 有权
标题翻译：具有铁电容量的存储单元阵列，其制造方法和铁电存储器件
公开(公告)号：US06913937B2
公开(公告)日：2005-07-05
申请号：US10618688
申请日：2003-07-15
申请人： Eiji Natori , Kazumasa Hasegawa , Koichi Oguchi , Takao Nishikawa , Tatsuya Shimoda
发明人： Eiji Natori , Kazumasa Hasegawa , Koichi Oguchi , Takao Nishikawa , Tatsuya Shimoda
IPC分类号： H01L27/105 , G11C11/22 , H01L21/02 , H01L21/8246 , H01L27/10 , H01L21/00
CPC分类号： H01L28/55 , G11C11/22 , H01L27/101
摘要： The present invention relates to: a memory cell array which is capable of decreasing the parasitic capacitance of load capacitance of signal electrodes and has ferroelectric layers making up ferroelectric capacitors and having a predetermined pattern; a method of fabricating the memory cell array, and a ferroelectric memory device. In the memory cell array, memory cells formed of ferroelectric capacitors are arranged in a matrix. The ferroelectric capacitors include first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and ferroelectric layers disposed linearly along either the first signal electrodes or the second signal electrodes. Alternatively, the ferroelectric layers may be disposed only in intersection areas of the first and second signal electrodes.
摘要翻译：本发明涉及一种存储单元阵列，其能够降低信号电极的负载电容的寄生电容，并且具有构成铁电电容器并具有预定图案的铁电层; 一种制造该存储单元阵列的方法和一种铁电存储器件。在存储单元阵列中，由铁电电容器形成的存储单元被布置成矩阵。铁电电容器包括第一信号电极，沿与第一信号电极交叉的方向排列的第二信号电极，以及沿着第一信号电极或第二信号电极线性配置的铁电体层。或者，铁电层可以仅设置在第一和第二信号电极的交叉区域中。

4. 发明授权

US06727536B2 Ferroelectric memory device 失效
标题翻译：铁电存储器件
公开(公告)号：US06727536B2
公开(公告)日：2004-04-27
申请号：US09934550
申请日：2001-08-23
申请人： Kazumasa Hasegawa , Eiji Natori , Takao Nishikawa , Koichi Oguchi , Tatsuya Shimoda
发明人： Kazumasa Hasegawa , Eiji Natori , Takao Nishikawa , Koichi Oguchi , Tatsuya Shimoda
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11585 , H01L27/1159
摘要： A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and a ferroelectric layer disposed at least in intersection regions between the first signal electrodes and the second signal electrodes, and a peripheral circuit section for selectively writing information into or reading information from the memory cell. The memory cell array and the peripheral circuit section are formed in different layers. The peripheral circuit section is formed in a region outside the memory cell array.
摘要翻译：本发明的铁电体存储装置具备存储单元阵列，其中存储单元配置成具有第一信号电极的矩阵，第二信号电极沿与第一信号电极交叉的方向排列，以及至少设置在交叉区域的铁电层在第一信号电极和第二信号电极之间，以及周边电路部分，用于选择性地将信息写入或从存储器单元读取信息。存储单元阵列和外围电路部分形成在不同的层中。外围电路部分形成在存储单元阵列外部的区域中。

5. 发明授权

US06617627B2 Memory cell array having ferroelectric capacitors, method of fabricating the same, and ferroelectric memory device. 有权
标题翻译：具有铁电电容器的存储单元阵列，其制造方法和铁电存储器件。
公开(公告)号：US06617627B2
公开(公告)日：2003-09-09
申请号：US09931915
申请日：2001-08-20
申请人： Eiji Natori , Kazumasa Hasegawa , Koichi Oguchi , Takao Nishikawa , Tatsuya Shimoda
发明人： Eiji Natori , Kazumasa Hasegawa , Koichi Oguchi , Takao Nishikawa , Tatsuya Shimoda
IPC分类号： H01L31062
CPC分类号： H01L28/55 , G11C11/22 , H01L27/101
摘要： The present invention relates to: a memory cell array which is capable of decreasing the parasitic capacitance or load capacitance of signal electrodes and has ferroelectric layers making up ferroelectric capacitors and having a predetermined pattern; a method of fabricating the memory cell array, and a ferroelectric memory device. In the memory cell array, memory cells formed of ferroelectric capacitors are arranged in a matrix. The ferroelectric capacitors include first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and ferroelectric layers disposed linearly along either the first signal electrodes or the second signal electrodes. Alternatively, the ferroelectric layers may be disposed only in intersection areas of the first and second signal electrodes.
摘要翻译：本发明涉及一种存储单元阵列，其能够降低信号电极的寄生电容或负载电容，并且具有构成铁电电容器并具有预定图案的铁电层; 一种制造该存储单元阵列的方法和一种铁电存储器件。在存储单元阵列中，由铁电电容器形成的存储单元被布置成矩阵。铁电电容器包括第一信号电极，沿与第一信号电极交叉的方向排列的第二信号电极，以及沿第一信号电极或第二信号电极线性配置的铁电层。或者，铁电层可以仅设置在第一和第二信号电极的交叉区域中。

6. 发明授权

US07956519B2 Piezoelectric device having a ferroelectric film including a solid solution 有权
标题翻译：具有包含固溶体的铁电体膜的压电元件
公开(公告)号：US07956519B2
公开(公告)日：2011-06-07
申请号：US12662617
申请日：2010-04-26
申请人： Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
发明人： Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
IPC分类号： H01L41/187
CPC分类号： C04B35/457 , C04B35/01 , C04B35/16 , C04B35/42 , C04B35/4521 , C04B35/465 , C04B35/472 , C04B35/475 , C04B35/491 , C04B35/493 , C04B35/495 , C04B35/497 , C04B35/624 , C04B35/6264 , C04B35/62645 , C04B35/64 , C04B2235/3205 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3287 , C04B2235/3296 , C04B2235/3298 , C04B2235/3418 , C04B2235/3427 , C04B2235/3436 , C04B2235/3445 , C04B2235/3454 , C04B2235/3463 , C04B2235/664 , C04B2235/76 , C04B2235/80 , C23C14/08 , C23C16/40 , C23C16/409 , C23C18/1208 , C23C18/1225 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L41/1878 , H01L41/318
摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
摘要翻译：一种制造陶瓷的方法包括：形成包含具有氧八面体结构的复合氧化物材料和对复合氧化物材料具有催化作用的顺电性材料的混合状态的膜，并对膜进行热处理，其中，顺电材料是构成元素中包含Si的层状催化物质和构成元素中包含Si和Ge的层状催化物质之一。热处理包括烧结和后退火。至少在包括氧和臭氧中的至少一种的加压气氛中进行后退火。陶瓷是具有氧八面体结构的复合氧化物，并且具有氧八面体结构中的Si和Ge。

7. 发明授权

US07255941B2 Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor 有权
标题翻译：铁电体膜，铁电体电容器，铁电体存储器，压电元件，半导体元件，铁电体膜的制造方法以及铁电体电容器的制造方法
公开(公告)号：US07255941B2
公开(公告)日：2007-08-14
申请号：US10690021
申请日：2003-10-22
申请人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
发明人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
IPC分类号： B32B9/00
CPC分类号： C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/77 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C01P2006/80 , H01B1/08 , H01G4/1254 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/316 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A ferroelectric film is formed by an oxide that is described by a general formula AB1−xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x
摘要翻译：铁氧体膜由通式AB 1-x N x O 3 O 3所描述的氧化物形成。 A元素至少包含Pb，B元素包括Zr，Ti，V，W，Hf和Ta中的至少一种。铁电体膜包括在0.05 <= x <1的范围内的Nb。铁电薄膜可用于1T1C，2T2C和简单矩阵类型的铁电存储器。

8. 发明授权

US07205056B2 Ceramic film and method of manufacturing the same, ferroelectric capacitor, semiconductor device, and other element 有权
标题翻译：陶瓷膜及其制造方法，铁电电容器，半导体器件等元件
公开(公告)号：US07205056B2
公开(公告)日：2007-04-17
申请号：US10166781
申请日：2002-06-12
申请人： Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
发明人： Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
IPC分类号： B32B9/00
CPC分类号： C04B35/457 , C04B35/01 , C04B35/16 , C04B35/42 , C04B35/4521 , C04B35/465 , C04B35/472 , C04B35/475 , C04B35/491 , C04B35/493 , C04B35/495 , C04B35/497 , C04B35/624 , C04B35/6264 , C04B35/62645 , C04B35/64 , C04B2235/3205 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3287 , C04B2235/3296 , C04B2235/3298 , C04B2235/3418 , C04B2235/3427 , C04B2235/3436 , C04B2235/3445 , C04B2235/3454 , C04B2235/3463 , C04B2235/664 , C04B2235/76 , C04B2235/80 , C23C14/08 , C23C16/40 , C23C16/409 , C23C18/1208 , C23C18/1225 , H01L21/02197 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L41/1878 , H01L41/318
摘要： A method of manufacturing a ceramic film includes forming the ceramic film by crystallizing a ceramic raw material liquid which includes a first raw material liquid and a second raw material liquid. The first raw material liquid and the second raw material liquid are different types of liquids, the first raw material liquid is a raw material liquid for producing a ferroelectric, the second raw material liquid is a raw material liquid for producing an oxide such as an ABO-type oxide, a solvent included in the first raw material liquid and a solvent included in the second raw material liquid have different polarities, and the ceramic film is formed in a state in which the first raw material liquid and the second raw material liquid are phase separated so that first crystals formed of the first raw material liquid are intermittently formed in a surface direction of the ceramic film and second crystals formed of the second raw material liquid are formed so as to interpose between the first crystals.
摘要翻译：制造陶瓷膜的方法包括通过使包含第一原料液体和第二原料液体的陶瓷原料液体结晶来形成陶瓷膜。第一原料液体和第二原料液体是不同种类的液体，第一原料液体是用于生产铁电体的原料液体，第二原料液体是用于生产诸如ABO的氧化物的原料液体型氧化物，包含在第一原料液体中的溶剂和包含在第二原料液体中的溶剂具有不同的极性，并且陶瓷膜形成为第一原料液体和第二原料液体为相分离，使得在陶瓷膜的表面方向间歇地形成由第一原料液形成的第一晶体，并且形成由第二原料液形成的第二晶体，以便介于第一晶体之间。

9. 发明授权

US07196457B2 Piezoelectric film, piezoelectric element, piezoelectric actuator, piezoelectric pump, ink-jet type recording head, ink-jet printer, surface-acoustic-wave element, thin-film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus 有权
标题翻译：压电膜，压电元件，压电致动器，压电泵，喷墨式记录头，喷墨打印机，表面声波元件，薄膜压电谐振器，频率滤波器，振荡器，电子电路和电子设备
公开(公告)号：US07196457B2
公开(公告)日：2007-03-27
申请号：US10970697
申请日：2004-10-21
申请人： Hiromu Miyazawa , Takeshi Kijima , Eiji Natori , Taku Aoyama , Setsuya Iwashita , Takamitsu Higuchi
发明人： Hiromu Miyazawa , Takeshi Kijima , Eiji Natori , Taku Aoyama , Setsuya Iwashita , Takamitsu Higuchi
IPC分类号： H01L41/187 , B41J2/045
CPC分类号： H03H9/0542 , B41J2/14233 , B41J2202/03 , F04B43/046 , H01L41/0815 , H01L41/1876 , H01L41/318 , H03H9/02574 , H03H9/02984 , H03H9/173 , H03H9/174 , H03H9/64
摘要： A piezoelectric film is provided having good piezoelectric properties. The piezoelectric film is represented by the following general formula: A1−bB1−aXaO3 wherein A contains Pb; B is at least one of Zr and Ti; X is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05≦a≦0.3; and b satisfies 0.025≦b≦0.15.
摘要翻译：提供具有良好的压电性能的压电膜。压电膜由以下通式表示：A 1-b B 1-a X a O 3 3 / >其中A含有Pb; B是Zr和Ti中的至少一种; X是V，Nb，Ta，Cr，Mo和W中的至少一种; a满足0.05 <= a <= 0.3; 并且b满足0.025≤b≤0.15。

10. 发明授权

US07186570B2 Method of manufacturing ceramic film, method of manufacturing ferroelectric capacitor, ceramic film, ferroelectric capacitor, and semiconductor device 有权
标题翻译：制造陶瓷膜的方法，制造铁电电容器，陶瓷膜，铁电电容器和半导体器件的方法
公开(公告)号：US07186570B2
公开(公告)日：2007-03-06
申请号：US10722422
申请日：2003-11-28
申请人： Takeshi Kijima , Eiji Natori
发明人： Takeshi Kijima , Eiji Natori
IPC分类号： H01L21/00 , C30B1/00
CPC分类号： H01L21/02356 , B82Y30/00 , C04B35/491 , C04B35/64 , C04B2235/6584 , C04B2235/662 , C04B2235/781 , H01G4/1209 , H01L21/02197 , H01L21/02282 , H01L21/02337 , H01L21/28291 , H01L21/31691 , H01L27/11502 , H01L28/55 , H01L29/516
摘要： A lower electrode is formed over a substrate, and a raw material including a complex oxide is heated in an atmosphere pressurized to two atmospheres or more and containing oxygen at a volume ratio of 10% or less at a temperature raising rate of 100° C./min or less, thereby forming a lower alloy film of a compound of a first metal which makes up the complex oxide, and a second metal, which makes up the lower electrode, over the lower electrode. A ceramic film in which the raw material is crystallized is formed over the lower alloy film, and an upper electrode is formed over the ceramic film.
摘要翻译：在基板上形成下电极，将包含复合氧化物的原料在加压至2个大气压以上的气氛中以100℃的升温速度以10体积％以下的体积比进行加热。 /分钟以下，由此在下电极上形成构成复合氧化物的第一金属的化合物和构成下电极的第二金属的下合金膜。在下合金膜上形成原料结晶的陶瓷膜，在陶瓷膜上形成上电极。

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