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1. 发明授权

US07169621B2 Ferroelectric memory device 失效
标题翻译：铁电存储器件
公开(公告)号：US07169621B2
公开(公告)日：2007-01-30
申请号：US10780572
申请日：2004-02-19
申请人： Kazumasa Hasegawa , Eiji Natori , Takao Nishikawa , Koichi Oguchi , Tatsuya Shimoda
发明人： Kazumasa Hasegawa , Eiji Natori , Takao Nishikawa , Koichi Oguchi , Tatsuya Shimoda
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11585 , H01L27/1159
摘要： A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and a ferroelectric layer disposed at least in intersection regions between the first signal electrodes and the second signal electrodes, and a peripheral circuit section for selectively writing information into or reading information from the memory cell. The memory cell array and the peripheral circuit section are formed in different layers. The peripheral circuit section is formed in a region outside the memory cell array.
摘要翻译：本发明的铁电体存储装置具备存储单元阵列，其中存储单元配置成具有第一信号电极的矩阵，第二信号电极沿与第一信号电极交叉的方向排列，以及至少设置在交叉区域的铁电层在第一信号电极和第二信号电极之间，以及用于选择性地将信息写入或从存储单元读取信息的外围电路部分。存储单元阵列和外围电路部分形成在不同的层中。外围电路部分形成在存储单元阵列外部的区域中。

2. 发明授权

US06727536B2 Ferroelectric memory device 失效
标题翻译：铁电存储器件
公开(公告)号：US06727536B2
公开(公告)日：2004-04-27
申请号：US09934550
申请日：2001-08-23
申请人： Kazumasa Hasegawa , Eiji Natori , Takao Nishikawa , Koichi Oguchi , Tatsuya Shimoda
发明人： Kazumasa Hasegawa , Eiji Natori , Takao Nishikawa , Koichi Oguchi , Tatsuya Shimoda
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11585 , H01L27/1159
摘要： A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and a ferroelectric layer disposed at least in intersection regions between the first signal electrodes and the second signal electrodes, and a peripheral circuit section for selectively writing information into or reading information from the memory cell. The memory cell array and the peripheral circuit section are formed in different layers. The peripheral circuit section is formed in a region outside the memory cell array.
摘要翻译：本发明的铁电体存储装置具备存储单元阵列，其中存储单元配置成具有第一信号电极的矩阵，第二信号电极沿与第一信号电极交叉的方向排列，以及至少设置在交叉区域的铁电层在第一信号电极和第二信号电极之间，以及周边电路部分，用于选择性地将信息写入或从存储器单元读取信息。存储单元阵列和外围电路部分形成在不同的层中。外围电路部分形成在存储单元阵列外部的区域中。

3. 发明授权

US06913937B2 Memory cell array having ferroelectric capacity, method of manufacturing the same and ferroelectric memory device 有权
标题翻译：具有铁电容量的存储单元阵列，其制造方法和铁电存储器件
公开(公告)号：US06913937B2
公开(公告)日：2005-07-05
申请号：US10618688
申请日：2003-07-15
申请人： Eiji Natori , Kazumasa Hasegawa , Koichi Oguchi , Takao Nishikawa , Tatsuya Shimoda
发明人： Eiji Natori , Kazumasa Hasegawa , Koichi Oguchi , Takao Nishikawa , Tatsuya Shimoda
IPC分类号： H01L27/105 , G11C11/22 , H01L21/02 , H01L21/8246 , H01L27/10 , H01L21/00
CPC分类号： H01L28/55 , G11C11/22 , H01L27/101
摘要： The present invention relates to: a memory cell array which is capable of decreasing the parasitic capacitance of load capacitance of signal electrodes and has ferroelectric layers making up ferroelectric capacitors and having a predetermined pattern; a method of fabricating the memory cell array, and a ferroelectric memory device. In the memory cell array, memory cells formed of ferroelectric capacitors are arranged in a matrix. The ferroelectric capacitors include first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and ferroelectric layers disposed linearly along either the first signal electrodes or the second signal electrodes. Alternatively, the ferroelectric layers may be disposed only in intersection areas of the first and second signal electrodes.
摘要翻译：本发明涉及一种存储单元阵列，其能够降低信号电极的负载电容的寄生电容，并且具有构成铁电电容器并具有预定图案的铁电层; 一种制造该存储单元阵列的方法和一种铁电存储器件。在存储单元阵列中，由铁电电容器形成的存储单元被布置成矩阵。铁电电容器包括第一信号电极，沿与第一信号电极交叉的方向排列的第二信号电极，以及沿着第一信号电极或第二信号电极线性配置的铁电体层。或者，铁电层可以仅设置在第一和第二信号电极的交叉区域中。

4. 发明授权

US06617627B2 Memory cell array having ferroelectric capacitors, method of fabricating the same, and ferroelectric memory device. 有权
标题翻译：具有铁电电容器的存储单元阵列，其制造方法和铁电存储器件。
公开(公告)号：US06617627B2
公开(公告)日：2003-09-09
申请号：US09931915
申请日：2001-08-20
申请人： Eiji Natori , Kazumasa Hasegawa , Koichi Oguchi , Takao Nishikawa , Tatsuya Shimoda
发明人： Eiji Natori , Kazumasa Hasegawa , Koichi Oguchi , Takao Nishikawa , Tatsuya Shimoda
IPC分类号： H01L31062
CPC分类号： H01L28/55 , G11C11/22 , H01L27/101
摘要： The present invention relates to: a memory cell array which is capable of decreasing the parasitic capacitance or load capacitance of signal electrodes and has ferroelectric layers making up ferroelectric capacitors and having a predetermined pattern; a method of fabricating the memory cell array, and a ferroelectric memory device. In the memory cell array, memory cells formed of ferroelectric capacitors are arranged in a matrix. The ferroelectric capacitors include first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and ferroelectric layers disposed linearly along either the first signal electrodes or the second signal electrodes. Alternatively, the ferroelectric layers may be disposed only in intersection areas of the first and second signal electrodes.
摘要翻译：本发明涉及一种存储单元阵列，其能够降低信号电极的寄生电容或负载电容，并且具有构成铁电电容器并具有预定图案的铁电层; 一种制造该存储单元阵列的方法和一种铁电存储器件。在存储单元阵列中，由铁电电容器形成的存储单元被布置成矩阵。铁电电容器包括第一信号电极，沿与第一信号电极交叉的方向排列的第二信号电极，以及沿第一信号电极或第二信号电极线性配置的铁电层。或者，铁电层可以仅设置在第一和第二信号电极的交叉区域中。

5. 发明授权

US06521928B2 Ferroelectric capacitor array and method for manufacturing ferroelectric memory 失效
标题翻译：铁电电容阵列及制造铁电存储器的方法
公开(公告)号：US06521928B2
公开(公告)日：2003-02-18
申请号：US09769262
申请日：2001-06-28
申请人： Takao Nishikawa , Eiji Natori , Katsuyuki Morii
发明人： Takao Nishikawa , Eiji Natori , Katsuyuki Morii
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/0805 , H01L27/11507 , H01L28/55
摘要： The present invention is equipped with a ferroelectric film having concave and convex patterns formed on both sides thereof corresponding to respective electrodes of a plurality of capacitors. A first substrate has first electrodes of the plurality of capacitors formed on one surface thereof. A second substrate has second electrodes of the plurality of capacitors formed on the other surface thereof. First and second anisotropic conduction films are provided between one surface of the ferroelectric film and the first substrate and between the other surface of the ferroelectric film and the second electrode film, respectively, to thereby establish conduction between the convex sections of the ferroelectric film of the capacitors and the electrodes of the capacitors. Since the multiple capacitors can be formed without conducting an etching (lithography) process, damages that may be inflicted on the ferroelectric film when the ferroelectric capacitors are formed can be reduced.
摘要翻译：本发明装备有对应于多个电容器的各个电极的两侧形成有凹凸图案的铁电体膜。第一基板具有在其一个表面上形成的多个电容器的第一电极。第二基板具有在其另一个表面上形成的多个电容器的第二电极。第一和第二各向异性导电膜分别设置在铁电体膜的一个表面和第一基板之间，并且分别设置在铁电体膜和第二电极膜的另一个表面之间，从而在该铁电体膜的凸部之间建立导电电容器和电容器的电极。由于可以在不进行蚀刻（光刻）工艺的情况下形成多个电容器，所以可以减少在形成强电介质电容器时在铁电体膜上产生的损伤。

6. 发明授权

US06967114B2 Large EL panel and manufacturing method therefor 失效
标题翻译：大型EL面板及其制造方法
公开(公告)号：US06967114B2
公开(公告)日：2005-11-22
申请号：US10617746
申请日：2003-07-14
申请人： Tatsuya Shimoda , Takao Nishikawa
发明人： Tatsuya Shimoda , Takao Nishikawa
IPC分类号： G09F9/30 , G09F9/313 , G09F9/40 , H01L27/32 , H01L51/50 , H05B33/12 , H05B33/14 , H01L21/00
CPC分类号： H01L27/3293 , G09F9/313 , H01L27/3244
摘要： A manufacturing method is disclosed for a large EL panel in which a plurality of EL display panels are used. Each of said plurality of EL display panels are constructed of an EL display device and a sub-transparent substrate. The EL display device includes a base layer over which a luminescent material is applied, an electrode layer which is laminated on one side of said base layer, and a TFT layer including a circuit section. The circuit section of a TFT layer is disposed behind an adjacent EL display device. Thus, the EL display devices appear to be unified, forming a large EL display panel. In addition, in the case of in which a plurality of EL display devices are arranged in a matrix pattern, pitch between the pixels provided in the pixel section of the TFT array is maintained constant.
摘要翻译：公开了一种使用多个EL显示面板的大型EL面板的制造方法。所述多个EL显示面板中的每一个由EL显示装置和副透明基板构成。 EL显示装置包括施加发光材料的基底层，层叠在所述基底层一侧的电极层和包括电路部分的TFT层。 TFT层的电路部分设置在相邻的EL显示装置的后面。因此，EL显示装置看起来是统一的，形成大的EL显示面板。此外，在多个EL显示装置以矩阵图案布置的情况下，设置在TFT阵列的像素部分中的像素之间的间距保持恒定。

7. 发明授权

US5952129A Method of making a color filter 失效
标题翻译：制作滤色片的方法
公开(公告)号：US5952129A
公开(公告)日：1999-09-14
申请号：US721202
申请日：1996-09-26
申请人： Hiroshi Kiguchi , Takao Nishikawa , Tatsuya Shimoda , Masaru Kojima , Sadao Kanbe
发明人： Hiroshi Kiguchi , Takao Nishikawa , Tatsuya Shimoda , Masaru Kojima , Sadao Kanbe
IPC分类号： G02B5/20 , G02B5/22 , G02F1/1335
CPC分类号： G02B5/223 , G02F1/133516
摘要： A process of making a color filter includes a first step of producing a master having a plurality of ink charging recesses arranged in a given pattern, a second step of charging ink of preselected colors into the ink charging recesses to form an ink layer, a third step of forming a resin layer over the master into which the ink have been charged and a fourth step of separating the ink layer and the resin layer together from the master after these layers have been cured.
摘要翻译：制造滤色器的过程包括制备具有以给定图案布置的多个墨水填充凹槽的母版的第一步骤，将预选颜色的墨水充入墨水填充凹部中以形成墨层的第二步骤，第三步骤在已经充有油墨的母料上形成树脂层的步骤以及在这些层已经固化之后将油墨层和树脂层与母料分离的第四步骤。

8. 发明授权

US06420190B1 Method of manufacturing ferroelectric memory device 失效
标题翻译：铁电存储器件的制造方法
公开(公告)号：US06420190B1
公开(公告)日：2002-07-16
申请号：US09762222
申请日：2001-02-06
申请人： Tatsuya Shimoda , Takao Nishikawa
发明人： Tatsuya Shimoda , Takao Nishikawa
IPC分类号： H01G706
CPC分类号： H01L27/11502 , H01L21/0337 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A method of manufacturing a ferroelectric memory device includes a step of forming a first region (24) having surface characteristics allowing the material for the members of a ferroelectric capacitor section to be preferentially deposited, and a second region (26) having surface characteristics allowing the material for the capacitor section to be less deposited than the first region (24), and a step of providing the material on the base (10) to form a first electrode (32), a ferroelectric film (34), and a second electrode (36) in the first region (24) of the base (10).
摘要翻译：制造铁电存储器件的方法包括形成具有表现特性的第一区域（24）的步骤，所述表面特性允许强电介质电容器部件的部件的材料被优先沉积;以及第二区域（26），具有允许电容器部分的材料比第一区域（24）更少沉积;以及在基底（10）上提供材料以形成第一电极（32），铁电体膜（34）和第二电极（10）的第一区域（24）中的位置（36）。

9. 发明授权

US06480212B1 Printer 有权
标题翻译：打印机
公开(公告)号：US06480212B1
公开(公告)日：2002-11-12
申请号：US09606838
申请日：2000-06-28
申请人： Tatsuya Shimoda , Takao Nishikawa
发明人： Tatsuya Shimoda , Takao Nishikawa
IPC分类号： B41J2385
CPC分类号： H04N1/508 , B41J2/45 , G03G2215/0174
摘要： Primary scanning or other operation is not required by the light source of an internal exposure method, significantly improving the positioning of each color. An EL pixel array 134 is affixed as internal light source 124 to the entire surface of a photoconductive drum 114, and pixels controllable by TFT layer 144 are allocated to the entire image formation area of the photoconductive drum 114. Unlike with a conventional internal light source using an LED, a mechanism for moving in a primary scanning direction is therefore not needed and elements whereby the position of each color image shift are completely eliminated. As a result, there is absolutely no color shifting in full color images, and high quality images can be obtained.
摘要翻译：主要扫描或其他操作不需要内部曝光方法的光源，显着改善每种颜色的定位。 EL像素阵列134作为内部光源124固定在感光鼓114的整个表面上，并且由TFT层144控制的像素被分配给感光鼓114的整个图像形成区域。与传统的内部光源不同因此，使用LED，因此不需要在主扫描方向上移动的机构，并且完全消除了每个彩色图像偏移的位置的元件。结果，在全色图像中绝对没有颜色偏移，并且可以获得高质量的图像。

10. 发明申请

US20050032268A1 Organic thin film transistor and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20050032268A1
公开(公告)日：2005-02-10
申请号：US10882091
申请日：2004-06-30
申请人： Takao Nishikawa , Tatsuya Shimoda , Yoshihiro Iwasa , Taishi Takenobu , Shinichiro Kobayashi , Tadaoki Mitani
发明人： Takao Nishikawa , Tatsuya Shimoda , Yoshihiro Iwasa , Taishi Takenobu , Shinichiro Kobayashi , Tadaoki Mitani
IPC分类号： H01L51/05 , G02F1/13 , H01L21/28 , H01L29/786 , H01L51/30 , H01L35/24 , H01L21/84
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0046 , H01L51/0052 , H01L51/0516
摘要： An organic thin film transistor and a method of manufacturing the same are provided. The transistor has a threshold voltage that can be easily controlled without changing the material forming an organic semiconductor film. The organic thin film transistor includes a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor film. A threshold voltage controlling film is provided between the gate insulating film and the organic semiconductor film.
摘要翻译：提供有机薄膜晶体管及其制造方法。晶体管具有可以容易地控制的阈值电压，而不改变形成有机半导体膜的材料。有机薄膜晶体管包括栅电极，栅极绝缘膜，源电极，漏电极和有机半导体膜。在栅极绝缘膜和有机半导体膜之间设置阈值电压控制膜。

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