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1. 发明授权

US06800416B2 Negative deep ultraviolet photoresist 失效
标题翻译：负深紫外光致抗蚀剂
公开(公告)号：US06800416B2
公开(公告)日：2004-10-05
申请号：US10042531
申请日：2002-01-09
申请人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel , Medhat A. Touky
发明人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel , Medhat A. Touky
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0046 , Y10S430/108
摘要： The present invention relates to a novel negative working deep uv photoresist that is developable in an aqueous alkaline solution, and comprises a fluorinated polymer, photoactive compound and a crosslinking agent. The photoresist composition is particularly useful for patterning with exposure wavelengths of 193 nm and 157 nm.
摘要翻译：本发明涉及一种可在碱性水溶液中显影的新型负极深紫外光致抗蚀剂，其包含氟化聚合物，光活性化合物和交联剂。光致抗蚀剂组合物特别适用于193nm和157nm的曝光波长的图形化。

2. 发明授权

US06991888B2 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 有权
标题翻译：用于深紫外光刻的光致抗蚀剂组合物，其包含光活性化合物的混合物
公开(公告)号：US06991888B2
公开(公告)日：2006-01-31
申请号：US10439472
申请日：2003-05-16
申请人： Munirathna Padmanaban , Takanori Kudo , Sangho Lee , Ralph R. Dammel , M. Dalil Rahman
发明人： Munirathna Padmanaban , Takanori Kudo , Sangho Lee , Ralph R. Dammel , M. Dalil Rahman
IPC分类号： G03F7/004 , C08F2/46 , C07C53/00 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/115
摘要： The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.
摘要翻译：本发明涉及一种可用碱性水溶液显影的新型光刻胶组合物，能够在深紫外线的曝光波长下成像。本发明还涉及用于对新型光致抗蚀剂以及新型光酸产生剂进行成像的方法。新型光致抗蚀剂包含a）含有酸不稳定基团的聚合物，和b）光活性化合物的新混合物，其中该混合物包含选自结构1和2的较低吸收化合物和选自结构4和5的较高吸收化合物，其中R 1和R 2 R 5，R 6，R 7，或N R 8，R 9和R 9在本文中定义; m = 1-5; X - 是阴离子，Ar选自萘基，蒽基和结构3，其中R 30，R 31，R SUB > 32，R 33和R 34在本文中定义。

3. 发明授权

US07595141B2 Composition for coating over a photoresist pattern 有权
标题翻译：用于在光致抗蚀剂图案上涂覆的组合物
公开(公告)号：US07595141B2
公开(公告)日：2009-09-29
申请号：US10973633
申请日：2004-10-26
申请人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel
发明人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/40
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.
摘要翻译：本发明涉及包含含有氨基的聚合物的光致抗蚀剂图案的水性涂料组合物。本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分不与去除溶液反应的涂料。

4. 发明申请

US20110086312A1 Positive-Working Photoimageable Bottom Antireflective Coating 审中-公开
标题翻译：正面照相底部防反射涂层
公开(公告)号：US20110086312A1
公开(公告)日：2011-04-14
申请号：US12576622
申请日：2009-10-09
申请人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
发明人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/091
摘要： The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is wherein W is selected from (C1-C30) linear, branched or cyclic alkyl moiety, substituted or unsubstituted (C3-C40) alicyclic hydrocarbon moiety and substituted is or unsubstituted (C3-C40) cycloalkylalkylene moiety; R is selected from C1-C10 linear or branched alkylene and n≧2. The invention further relates to a process for using such a composition.
摘要翻译：本发明涉及能够在含水碱性显影剂中显影的正底部可光成像抗反射涂料组合物，其中抗反射涂料组合物包含含有至少一个具有发色团的重复单元的聚合物和一个具有羟基的重复单元， /或羧基，结构式（7）的乙烯基醚封端的交联剂，以及任选的光酸产生剂和/或酸和/或热酸发生剂，其中结构（7）其中W选自（C1 -C 30）直链，支链或环状的烷基部分，取代或未取代的（C 3 -C 40）脂环烃部分和取代的或未取代的（C 3 -C 40）环烷基亚烷基部分; R选自C1-C10直链或支链亚烷基，n≥2。本发明还涉及使用这种组合物的方法。

5. 发明授权

US06723488B2 Photoresist composition for deep UV radiation containing an additive 失效
标题翻译：用于含有添加剂的深紫外线辐射的光刻胶组合物
公开(公告)号：US06723488B2
公开(公告)日：2004-04-20
申请号：US10037161
申请日：2001-11-07
申请人： Takanori Kudo , Ralph R. Dammel , Munirathna Padmanaban
发明人： Takanori Kudo , Ralph R. Dammel , Munirathna Padmanaban
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0397 , G03F7/40 , Y10S430/106
摘要： The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.
摘要翻译：本发明涉及对深紫外线辐射敏感的光致抗蚀剂组合物，特别是在100-200纳米（nm）范围内敏感的正性工作光致抗蚀剂。光致抗蚀剂组合物包含：a）不溶于碱性水溶液且包含至少一种酸不稳定基团的聚合物，此外，聚合物基本上是非酚类的，b）能够在辐射时产生酸的化合物，c ）减少电子和离子对光致抗蚀剂图像的影响的添加剂。

6. 发明授权

US07537879B2 Photoresist composition for deep UV and process thereof 失效
标题翻译：用于深紫外线的光致抗蚀剂组合物及其工艺
公开(公告)号：US07537879B2
公开(公告)日：2009-05-26
申请号：US10994745
申请日：2004-11-22
申请人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
发明人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , G03C1/73
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.
摘要翻译：本发明涉及一种对300nm至100nm之间的波长敏感的新型化学放大光致抗蚀剂，并且包括a）一种新型聚合物，其包含不溶于碱性水溶液的聚合物主链的侧基的砜基，用酸不稳定基团保护的至少一个酸性部分，和b）在照射时能够产生酸的化合物。本发明还涉及对新型正性光致抗蚀剂组合物进行成像的方法。

7. 发明授权

US06447980B1 Photoresist composition for deep UV and process thereof 失效
标题翻译：用于深紫外线的光致抗蚀剂组合物及其工艺
公开(公告)号：US06447980B1
公开(公告)日：2002-09-10
申请号：US09619336
申请日：2000-07-19
申请人： M. Dalil Rahman , Munirathna Padmanaban , Ralph R. Dammel
发明人： M. Dalil Rahman , Munirathna Padmanaban , Ralph R. Dammel
IPC分类号： G03C1492
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0395 , Y10S430/115
摘要： The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.
摘要翻译：本发明涉及一种化学放大系统，其对300nm至100nm之间的波长敏感，并且包括a）不溶于碱性水溶液并且包含至少一种酸不稳定基团的聚合物，b）具有能力的化合物在辐射时产生酸。本发明包括由脂环烃烯烃，具有侧链环状的丙烯酸酯和环状酸酐制成的聚合物。本发明还涉及这种光致抗蚀剂的成像方法。

8. 发明申请

US20120108067A1 Edge Bead Remover For Coatings 审中-公开
标题翻译：用于涂料的边缘珠去除剂
公开(公告)号：US20120108067A1
公开(公告)日：2012-05-03
申请号：US12915950
申请日：2010-10-29
申请人： Mark O. Neisser , Srinivasan Chakrapani , Munirathna Padmanaban , Ralph R. Dammel
发明人： Mark O. Neisser , Srinivasan Chakrapani , Munirathna Padmanaban , Ralph R. Dammel
IPC分类号： H01L21/311 , G03F7/42
CPC分类号： G03F7/168 , C11D3/373 , C11D3/3765 , C11D3/43 , C11D7/5022 , C11D11/0047 , G03F7/2041
摘要： The invention relates to an edge bead remover composition for an organic film disposed on a substrate surface, comprising an organic solvent and at least one polymer having a contact angle with water greater than 70°. The invention also relates to a process for using the composition as an edge bead remover for an organic film.
摘要翻译：本发明涉及一种用于有机膜的边缘珠粒去除组合物，其用于设置在基材表面上，包括有机溶剂和至少一种与水的接触角大于70°的聚合物。本发明还涉及使用该组合物作为有机膜的边缘珠去除剂的方法。

9. 发明申请

US20090253080A1 Photoresist Image-Forming Process Using Double Patterning 审中-公开
标题翻译：使用双重图案的光刻胶图像形成过程
公开(公告)号：US20090253080A1
公开(公告)日：2009-10-08
申请号：US12061061
申请日：2008-04-02
申请人： Ralph R. Dammel , David Abdallah , Eric Alemy , Munirathna Padmanaban
发明人： Ralph R. Dammel , David Abdallah , Eric Alemy , Munirathna Padmanaban
IPC分类号： G03F7/30
CPC分类号： G03F7/0035 , G03F7/40
摘要： A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) imagewise exposing the second photoresist; and, g) developing the imagewise exposed second photoresist to form a second photoresist pattern between the first photoresist pattern, thereby providing a double photoresist pattern.
摘要翻译：一种在器件上形成光致抗蚀剂图案的工艺，包括： a）从第一光致抗蚀剂组合物在衬底上形成第一光致抗蚀剂层; b）成像曝光第一光致抗蚀剂; c）显影第一光致抗蚀剂以形成第一光致抗蚀剂图案; d）用包含至少2个氨基（NH 2）基团的硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的第一光致抗蚀剂图案; e）在包含来自第二光致抗蚀剂组合物的硬化的第一光致抗蚀剂图案的衬底的区域上形成第二光致抗蚀剂层; f）成像曝光第二光致抗蚀剂; 以及g）显影所述成像曝光的第二光致抗蚀剂以在所述第一光致抗蚀剂图案之间形成第二光致抗蚀剂图案，从而提供双光致抗蚀剂图案。

10. 发明授权

US6114085A Antireflective composition for a deep ultraviolet photoresist 有权
标题翻译：用于深紫外光致抗蚀剂的抗反射组合物
公开(公告)号：US6114085A
公开(公告)日：2000-09-05
申请号：US195057
申请日：1998-11-18
申请人： Munirathna Padmanaban , Ralph R. Dammel , Stanley A. Ficner , Joseph E. Oberlander , John P. Sagan
发明人： Munirathna Padmanaban , Ralph R. Dammel , Stanley A. Ficner , Joseph E. Oberlander , John P. Sagan
IPC分类号： G03F7/11 , G03F7/09 , H01L21/027 , G03F7/004
CPC分类号： G03F7/091
摘要： The present invention relates to a novel antireflecting coating composition, where the composition comprises a polymer, thermal acid generator and a solvent composition. The invention further comprises processes for the use of such a composition in photolithography. The composition strongly absorbs radiation ranging from about 130 nm (nanometer) to about 250 nm.
摘要翻译：本发明涉及新型抗反射涂料组合物，其中组合物包含聚合物，热酸产生剂和溶剂组合物。本发明还包括在光刻中使用这种组合物的方法。该组合物强烈地吸收约130nm（纳米）至约250nm的辐射。

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