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1. 发明授权

US4746857A Probing apparatus for measuring electrical characteristics of semiconductor device formed on wafer 失效
标题翻译：用于测量在晶片上形成的半导体器件的电特性的探测装置
公开(公告)号：US4746857A
公开(公告)日：1988-05-24
申请号：US903021
申请日：1986-09-02
申请人： Takamasa Sakai , Motohiro Kono , Takayuki Umaba , Yoshiyuki Nakagawa , Yoshihiro Koyama
发明人： Takamasa Sakai , Motohiro Kono , Takayuki Umaba , Yoshiyuki Nakagawa , Yoshihiro Koyama
IPC分类号： G01R1/067 , G01R31/28 , G01R31/02 , G01R1/06
CPC分类号： G01R1/06705 , G01R31/2831
摘要： A probing apparatus is used to measure electrical characteristics of a semiconductor device formed on a wafer. The apparatus includes means for holding the wafer in a vertical or slightly leaned position on a frame, a contact needle, three-directional drive means for holding the needle on the frame movably both vertically and horizontally along the device-bearing surface of the wafer and for bringing the needle into releasable contact with a desired portion of the device-bearing surface of the wafer, and a microscope provided in such a way that the tip of the needle is seen substantially at the center of the field of view, said microscope being movable together with the needle along the device-bearing surface of the wafer.
摘要翻译：探测装置用于测量形成在晶片上的半导体器件的电特性。该装置包括用于将晶片保持在框架上的垂直或稍微倾斜的位置的装置，接触针，三向驱动装置，用于沿着晶片的装置承载表面垂直和水平地可移动地将针保持在框架上; 用于使针与晶片的装置承载表面的期望部分可释放地接触，以及以使得针的尖端基本上被视为视野中心的方式设置的显微镜，所述显微镜是可以沿着晶片的装置承载表面与针一起移动。

2. 发明授权

US06278267B1 Method of determining impurity content and apparatus for the same 失效
标题翻译：确定杂质含量的方法及其设备
公开(公告)号：US06278267B1
公开(公告)日：2001-08-21
申请号：US09134584
申请日：1998-08-14
申请人： Hiroshi Okada , Sadao Hirae , Motohiro Kono
发明人： Hiroshi Okada , Sadao Hirae , Motohiro Kono
IPC分类号： G01N2700
CPC分类号： H01L22/12 , G01N2033/0095
摘要： The method obtains a first C-V curve prior to irradiation with light and a second C-V curve after the irradiation with light. The method determines the amount of the intra-film impurity ions in an insulating film in the state prior to the irradiation with light, based on the first and the second C-V curves.
摘要翻译：该方法在用光照射之后获得第一C-V曲线，并在光照射之后获得第二C-V曲线。该方法基于第一和第二C-V曲线确定在照射光之前的状态下的绝缘膜中的膜内杂质离子的量。

3. 发明授权

US06915232B2 Film thickness measuring method, relative dielectric constant measuring method, film thickness measuring apparatus, and relative dielectric constant measuring apparatus 失效
标题翻译：膜厚测定法，相对介电常数测定法，膜厚测定装置及相对介电常数测定装置
公开(公告)号：US06915232B2
公开(公告)日：2005-07-05
申请号：US10624871
申请日：2003-07-21
申请人： Toshikazu Kitajima , Motohiro Kono
发明人： Toshikazu Kitajima , Motohiro Kono
IPC分类号： G01B7/06 , G01N27/00 , G01N27/22 , G01R27/26 , H01L21/66 , G01B11/02
CPC分类号： G01N27/221 , G01R27/2635
摘要： A non-contact method of measuring the thickness of an insulator film on a semiconductor substrate includes: (i) charging the insulator film surface in a non-contact manner; (ii) obtaining a first flat band voltage by conducting, prior to the charging processing step, a C-V measurement on the semiconductor substrate; obtaining a second flat band voltage by conducting, after the charging processing step, a C-V measurement on the semiconductor substrate; and calculating, based on a difference between the first and second flat band voltages, the charge amount given to the insulator film surface by the charging processing step; (iii) then measuring the insulator film surface potential and (iv) calculating the insulator film thickness based on the charge amount measured at the charge amount measuring step and on the surface potential measured at the surface potential measuring step.
摘要翻译：测量半导体衬底上的绝缘膜的厚度的非接触方法包括：（i）以非接触方式对绝缘膜表面进行充电; （ii）通过在所述充电处理步骤之前，在所述半导体衬底上进行C-V测量来获得第一平带电压; 在所述充电处理步骤之后，通过在所述半导体衬底上进行C-V测量来获得第二平带电压; 并且基于所述第一和第二平带电压之间的差计算通过所述充电处理步骤施加到所述绝缘膜表面的电荷量; （iii）然后测量绝缘膜表面电位，以及（iv）基于在充电量测量步骤测量的充电量和在表面电位测量步骤测量的表面电位来计算绝缘膜厚度。

4. 发明授权

US06037781A Measurement of electrical characteristics of semiconductor wafer 失效
标题翻译：测量半导体晶圆的电气特性
公开(公告)号：US06037781A
公开(公告)日：2000-03-14
申请号：US46348
申请日：1998-03-23
申请人： Motohiro Kono , Tatsufumi Kusuda
发明人： Motohiro Kono , Tatsufumi Kusuda
IPC分类号： G01N27/00 , G01R31/26 , H01L21/66
CPC分类号： G01R31/2648 , H01L22/14
摘要： C-V measurement is first carried out with respect to a target area on a semiconductor wafer using a measuring electrode located over the target area. Parameters used for C-t measurement of the target area (for example, applied voltages Vacc and Vmeas or a recovery time Tr) are then obtained from a C-V characteristic obtained by the C-V measurement. C-t measurement is subsequently carried out with respect to the target area using these parameters.
摘要翻译：首先使用位于目标区域上方的测量电极相对于半导体晶片上的目标区域进行C-V测量。然后从由C-V测量获得的C-V特性获得用于目标区域的C-t测量的参数（例如，施加的电压Vacc和Vmeas或恢复时间Tr）。随后使用这些参数对目标区域进行C-t测量。

5. 发明申请

US20080238434A1 Surface voltmeter 有权
标题翻译：表面电压表
公开(公告)号：US20080238434A1
公开(公告)日：2008-10-02
申请号：US12076887
申请日：2008-03-25
申请人： Motohiro Kono , Toshikazu Kitajima , Kazuhiko Fuse , Yoshiyuki Nakazawa
发明人： Motohiro Kono , Toshikazu Kitajima , Kazuhiko Fuse , Yoshiyuki Nakazawa
IPC分类号： G01R29/12
CPC分类号： G01R29/12
摘要： In a surface voltmeter (1), a surface voltage on a measurement area on a semiconductor substrate (9) on which an insulating film is formed is measured while applying light to the measurement area. With this operation, a voltage induced on a main body of the substrate (9) by charge which is charged on a surface of the insulating film is balanced out. Consequently, it is possible to measure a surface voltage on the measurement area with high accuracy. Since an electrode wiring (164) used for application of an electrode voltage to an electrode (12) extends from the electrode (12) in a direction away from the substrate (9) along a vibration direction, it is possible to prevent influences of noises caused by vibration of the electrode wiring (164) in vibrating the electrode (12) and to measure the surface voltage on the measurement area more accurately.
摘要翻译：在表面电压计（1）中，在对测量区域施加光的同时测量在其上形成有绝缘膜的半导体衬底（9）上的测量区域上的表面电压。通过该操作，平衡了在基板（9）的主体上通过充电在绝缘膜的表面上的电荷感应的电压。因此，可以高精度地测量测量区域上的表面电压。由于用于向电极（12）施加电极电压的电极配线（164）沿着振动方向从离开基板（9）的方向从电极（12）延伸，所以可以防止噪声的影响由电极布线（164）振动电极（12）的振动引起的，并且更准确地测量测量区域上的表面电压。

6. 发明申请

US20050206911A1 Method and apparatus for measuring thickness of thin film formed on substrate 失效
标题翻译：用于测量在基板上形成的薄膜厚度的方法和装置
公开(公告)号：US20050206911A1
公开(公告)日：2005-09-22
申请号：US11069996
申请日：2005-03-03
申请人： Motohiro Kono , Yoshiyuki Nakazawa , Toshikazu Kitajima
发明人： Motohiro Kono , Yoshiyuki Nakazawa , Toshikazu Kitajima
IPC分类号： G01B11/06 , G01B21/08 , H01L21/00 , H01L21/66 , G01B11/28
CPC分类号： G01B11/0641 , G01B11/0675 , H01L21/67098
摘要： A memory (43) of a control unit (4) stores correction data (81) indicating a relationship between a decrement in a measurement value of a film thickness by removal of organic contamination adsorbed onto a substrate and an amount of adsorbed organic contamination corresponding to a difference between a true film thickness and the measurement. The difference is caused by organic contamination adsorbed onto the substrate before removal of organic contamination. In a film-thickness measuring apparatus (1), a calculating/measuring part 41 obtains a first measurement value of a film thickness on a substrate (9) using an ellipsometer (23), and further obtains a second measurement value which is affected by remaining organic contamination after organic contamination adsorbed onto the substrate (9) is removed by an organic contamination remover (3). A film-thickness calculator (42) obtains an amount of adsorbed organic contamination before removal of organic contamination based on the first and second measurement values and the correction data (81). A thickness of the thin film formed on the substrate (9) is accurately obtained based on the first measurement value and the amount of adsorbed organic contamination before removal of organic contamination.
摘要翻译：控制单元（4）的存储器（43）存储校正数据（81），其指示通过去除吸附在基板上的有机污染物和对应于有机污染物的吸附量而指示膜厚测量值的减小之间的关系真实膜厚度和测量值之间的差异。不同之处在于去除有机污染物之前吸附在基材上的有机污染物。在膜厚测量装置（1）中，计算/测量部分41使用椭偏仪（23）获得衬底（9）上的膜厚度的第一测量值，并且进一步获得受第通过有机污染去除剂（3）除去吸附在基材（9）上的有机污染物之后的剩余有机污染物。薄膜厚度计算器（42）基于第一测量值和第二测量值以及校正数据（81）获得去除有机污染物之前的吸附的有机污染物的量。基于在除去有机污染物之前的第一测量值和吸附的有机污染物的量，准确地获得形成在基板（9）上的薄膜的厚度。

7. 发明申请

US20050198857A1 Apparatus and method for removing organic contamination adsorbed onto substrate, and apparatus and method for measuring thickness of thin film formed on substrate 审中-公开
标题翻译：用于去除吸附在基板上的有机污染物的装置和方法，以及用于测量在基板上形成的薄膜厚度的装置和方法
公开(公告)号：US20050198857A1
公开(公告)日：2005-09-15
申请号：US11069995
申请日：2005-03-03
申请人： Yoshiyuki Nakazawa , Motohiro Kono , Toshikazu Kitajima , Daisuke Iso
发明人： Yoshiyuki Nakazawa , Motohiro Kono , Toshikazu Kitajima , Daisuke Iso
IPC分类号： G01B11/06 , F26B7/00 , F26B19/00 , H01L21/00 , H01L21/66
CPC分类号： G01B11/0641 , B08B7/0071 , B08B9/00 , H01L21/67069 , H01L21/67103 , H01L21/67253
摘要： In a body of a film-thickness measuring apparatus (1), an organic contamination remover (3) for removing organic contamination adsorbed onto a substrate (9) is provided. The organic contamination remover (3) includes a chamber body (31), an interior of which is kept clean. In the chamber body (31), a hot plate (32) for heating the substrate, a cooling plate (33) for cooling the substrate, and a transfer arm (34) for moving the substrate (9) from the hot plate (32) to the cooling plate (33) in the chamber body 31, are provided. With this structure, it is possible to keep the substrate (9) in a clean atmosphere within the chamber body (31), to thereby suppress re-adsorption of organic contamination onto the substrate during a time period from a time when organic contamination adsorbed onto the substrate (9) is removed to a time when cooling is completed.
摘要翻译：在膜厚测量装置（1）的主体中，提供了用于去除吸附在基板（9）上的有机污染物的有机污染物去除器（3）。有机污染物去除剂（3）包括室主体（31），其内部保持清洁。在室主体（31）中，设置用于加热基板的加热板（32），冷却基板的冷却板（33）和用于使基板（9）从热板（32）移动的转移臂）设置在室主体31中的冷却板（33）上。通过这种结构，可以将基板（9）保持在室主体（31）内的清洁气氛中，从而在从有机污染物吸附到时间的时间段内抑制有机污染物再次吸附到基板上将基板（9）移除到冷却完成的时间。

8. 发明授权

US07795886B2 Surface voltmeter 有权
标题翻译：表面电压表
公开(公告)号：US07795886B2
公开(公告)日：2010-09-14
申请号：US12076887
申请日：2008-03-25
申请人： Motohiro Kono , Toshikazu Kitajima , Kazuhiko Fuse , Yoshiyuki Nakazawa
发明人： Motohiro Kono , Toshikazu Kitajima , Kazuhiko Fuse , Yoshiyuki Nakazawa
IPC分类号： G01R31/302
CPC分类号： G01R29/12
摘要： In a surface voltmeter (1), a surface voltage on a measurement area on a semiconductor substrate (9) on which an insulating film is formed is measured while applying light to the measurement area. With this operation, a voltage induced on a main body of the substrate (9) by charge which is charged on a surface of the insulating film is balanced out. Consequently, it is possible to measure a surface voltage on the measurement area with high accuracy. Since an electrode wiring (164) used for application of an electrode voltage to an electrode (12) extends from the electrode (12) in a direction away from the substrate (9) along a vibration direction, it is possible to prevent influences of noises caused by vibration of the electrode wiring (164) in vibrating the electrode (12) and to measure the surface voltage on the measurement area more accurately.
摘要翻译：在表面电压计（1）中，在对测量区域施加光的同时测量在其上形成有绝缘膜的半导体衬底（9）上的测量区域上的表面电压。通过该操作，平衡了在基板（9）的主体上通过充电在绝缘膜的表面上的电荷感应的电压。因此，可以高精度地测量测量区域上的表面电压。由于用于向电极（12）施加电极电压的电极配线（164）沿着振动方向从离开基板（9）的方向从电极（12）延伸，所以可以防止噪声的影响由电极布线（164）振动电极（12）的振动引起的，并且更准确地测量测量区域上的表面电压。

9. 发明授权

US07598746B2 Surface voltmeter and surface voltage measurement method 失效
标题翻译：表面电压表和表面电压测量方法
公开(公告)号：US07598746B2
公开(公告)日：2009-10-06
申请号：US11715846
申请日：2007-03-09
申请人： Motohiro Kono , Kazuhiko Fuse , Yoshiyuki Nakazawa
发明人： Motohiro Kono , Kazuhiko Fuse , Yoshiyuki Nakazawa
IPC分类号： G01R29/12
CPC分类号： G01R29/12
摘要： A surface voltmeter has a stage having a conductive surface, a vibrating electrode, a vibration part, and an elevation mechanism. While vibrating the vibrating electrode, displacement current from the conductive surface is acquired. A control part controls electrode voltage so that the displacement current becomes a value specified by a computer, and acquires a relationship between the displacement current and the electrode voltage while changing the displacement current. Acquisition of the relationship is performed a plurality of times while changing distance between the vibrating electrode and an object, the electrode voltage which is independent from the distance between the vibrating electrode and the object is obtained as reference voltage, and surface voltage on the object is obtained on the basis of the reference voltage. This makes it possible to remove effects of stray capacitances between the vibrating electrode and other constituent elements therearound from measurement, and easily perform higher-precision measurement.
摘要翻译：表面电压表具有导电表面的阶段，振动电极，振动部分和升降机构。在振动电极振动的同时，获得来自导电表面的位移电流。控制部件控制电极电压，使得位移电流变为由计算机指定的值，并且在改变位移电流的同时获取位移电流和电极电压之间的关系。在改变振动电极和物体之间的距离的同时进行关系的获取，获得与振动电极和物体之间的距离无关的电极电压作为参考电压，并且物体上的表面电压为基于参考电压获得。这样可以消除振动电极与测量之外的其他构成元件之间的杂散电容的影响，并且容易进行更高精度的测量。

10. 发明授权

US07375537B2 Method and apparatus for measuring relative dielectric constant 有权
标题翻译：用于测量相对介电常数的方法和装置
公开(公告)号：US07375537B2
公开(公告)日：2008-05-20
申请号：US11087572
申请日：2005-03-24
申请人： Toshikazu Kitajima , Motohiro Kono
发明人： Toshikazu Kitajima , Motohiro Kono
IPC分类号： G01R27/26
CPC分类号： G01B11/065 , G01N21/211
摘要： A relative-dielectric-constant measuring apparatus according to the present invention includes an ellipsometer and a capacitance measuring part. The ellipsometer allows non-contact measurements of the film thickness and optical constants of an insulation film formed on the upper surface of a wafer. The capacitance measuring part, on the other hand, allows non-contact measurements of the gap between the insulation film and an electrode and accumulation capacitance. The relative-dielectric-constant measuring apparatus can calculate the relative dielectric constant of the insulation film based on the measured film thickness, gap, and accumulation capacitance. Thus, the relative dielectric constant of the insulation film can be determined without contact and with high precision.
摘要翻译：根据本发明的相对介电常数测量装置包括椭偏仪和电容测量部分。椭偏仪允许对在晶片的上表面上形成的绝缘膜的膜厚度和光学常数进行非接触测量。另一方面，电容测量部件允许对绝缘膜和电极之间的间隙进行非接触测量和累积电容。相对介电常数测量装置可以基于所测量的膜厚度，间隙和累积电容来计算绝缘膜的相对介电常数。因此，可以不接触地且高精度地确定绝缘膜的相对介电常数。

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