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1. 发明授权

US08263875B2 Surface mounting structure for a surface mounting electronic component 有权
标题翻译：表面安装电子部件的表面安装结构
公开(公告)号：US08263875B2
公开(公告)日：2012-09-11
申请号：US11901078
申请日：2007-09-13
申请人： Takamasa Nodo , Haruo Takagi
发明人： Takamasa Nodo , Haruo Takagi
IPC分类号： H05K1/16
CPC分类号： H05K1/111 , H05K3/3442 , H05K2201/09254 , H05K2201/09281 , H05K2201/09381 , H05K2201/09727 , H05K2201/10522 , H05K2201/10636 , Y02P70/611 , Y02P70/613
摘要： A surface mounting structure for a surface mounting electronic component has an electronic component, a land, a wiring, and an electrical connection pattern. The electronic component has electrodes at opposite ends thereof. The land is connected to each electrode through a solder. The wiring is connected to the land and has a width which is smaller than a width of the electronic component in a width direction thereof. The wiring is connected to the electrical connection pattern. The electrical connection pattern has on a side on which the wiring is connected to the electrical connection pattern a width which is larger than the width of the electronic component in the width direction thereof.
摘要翻译：用于表面安装电子部件的表面安装结构具有电子部件，焊盘，布线和电连接图案。电子部件在其相对端具有电极。焊盘通过焊料连接到每个电极。布线连接到台面，其宽度小于电子部件的宽度方向的宽度。接线连接到电气连接图案。电连接图案具有在电连接图案的与电子部件的宽度方向的宽度大的宽度上连接的一侧。

2. 发明申请

US20080066955A1 Surface mounting structure for a surface mounting electronic component 有权
标题翻译：表面安装电子部件的表面安装结构
公开(公告)号：US20080066955A1
公开(公告)日：2008-03-20
申请号：US11901078
申请日：2007-09-13
申请人： Takamasa Nodo , Haruo Takagi
发明人： Takamasa Nodo , Haruo Takagi
IPC分类号： H05K1/11
CPC分类号： H05K1/111 , H05K3/3442 , H05K2201/09254 , H05K2201/09281 , H05K2201/09381 , H05K2201/09727 , H05K2201/10522 , H05K2201/10636 , Y02P70/611 , Y02P70/613
摘要： A surface mounting structure for a surface mounting electronic component comprises an electronic component a land, a wiring, and an electrical connection pattern. The electronic component has electrodes at opposite ends thereof. The land is connected to each electrode through a solder. The wiring is connected to the land and has a width which is smaller than a width of the electronic component in a width direction thereof. The wiring is connected to the electrical connection pattern. The electrical connection pattern has on a side on which the wiring is connected to the electrical connection pattern a width which is larger than the width of the electronic component in the width direction thereof.
摘要翻译：用于表面安装电子部件的表面安装结构包括电子部件，焊盘，布线和电连接图案。电子部件在其相对端具有电极。焊盘通过焊料连接到每个电极。布线连接到台面，其宽度小于电子部件的宽度方向的宽度。接线连接到电气连接图案。电连接图案具有在电连接图案的与电子部件的宽度方向的宽度大的宽度上连接的一侧。

3. 发明授权

US5184201A Static induction transistor 失效
标题翻译：静电感应晶体管
公开(公告)号：US5184201A
公开(公告)日：1993-02-02
申请号：US793235
申请日：1991-11-08
申请人： Shinobu Aoki , Haruo Takagi , Takanori Okabe
发明人： Shinobu Aoki , Haruo Takagi , Takanori Okabe
IPC分类号： H01L21/335 , H01L29/739
CPC分类号： H01L29/66416 , H01L29/739
摘要： A static induction transistor has a gate region formed with a protrusion extending toward a drain region. The protrusion is located toward one side of the gate region such that a shallower gate region lies between the protrusion and the nearest source region. When a reverse voltage higher than the withstand voltage is applied between the gate and drain, avalanche breakdown occurs only in a region immediately below the protrusion, and no hot carriers are allowed to flow into a source region. Deterioration of the voltage-withstanding property and destruction of the device is thereby prevented. Another embodiment has a semiconductor region of a first conductivity type formed in a peripheral portion of a semiconductor layer of the first conductivity type in which a plurality of gate regions are disposed and adjacent a first major surface thereof. The distance between the semiconductor region and the nearest gate region is less than the distance between gate and drain regions such that the withstand voltage between the semiconductor region and the nearest gate region is less than that between the gate region and drain region. When a reverse bias voltage higher than a withstand voltage is applied between the gate and drain, the avalanche breakdown occurs only between the semiconductor region and the gate region nearest thereto.
摘要翻译：静电感应晶体管具有形成有朝向漏极区延伸的突起的栅极区域。突起位于栅极区域的一侧，使得较浅的栅极区域位于突起和最近的源极区域之间。当在栅极和漏极之间施加高于耐压的反向电压时，雪崩击穿仅在突起的正下方的区域中发生，并且不允许热载流子流入源区。从而防止了耐压性能的劣化和装置的破坏。另一实施例具有形成在第一导电类型的半导体层的周边部分中的第一导电类型的半导体区域，其中多个栅极区域设置并邻近其第一主表面。半导体区域和最近的栅极区域之间的距离小于栅极和漏极区域之间的距离，使得半导体区域和最近的栅极区域之间的耐受电压小于栅极区域和漏极区域之间的耐受电压。当在栅极和漏极之间施加高于耐电压的反向偏置电压时，雪崩击穿仅在半导体区域和与其最接近的栅极区域之间发生。

4. 发明授权

US5341706A Screw-driving device 失效
标题翻译：螺丝驱动装置
公开(公告)号：US5341706A
公开(公告)日：1994-08-30
申请号：US128802
申请日：1993-09-29
申请人： Haruo Takagi
发明人： Haruo Takagi
IPC分类号： B25B23/04
CPC分类号： B25B23/045
摘要： A screw-driving device, which can drive screws continuously one by one, comprises a casing coupled to a screwdriver, a slide member slidably moved in reciprocating movement in the casing and a mechanism for feeding a screw-holding tape by one-step pitches corresponding to the distances between the adjacent screws on the tape. The tape feeding mechanism includes a guide slot provided in the casing, and a two-arm lever pivotally connected to the slide member and pivotally moved to perform indexing of the screws to a position aligned with the screwdriver by a pin fitted into the inclined section of the guide slot. A pawl member with a pawl fitted into one of the grooves at one lateral edge of the tape is pivotally connected to the end of the other arm of the two-arm lever and is biased toward the tape by a spring. At the same time, a further pawl member entering one of the grooves at the opposite side of the tape is pivotally connected to the slide member and is biased toward the tape.
摘要翻译：螺杆驱动装置可以一个接一个地连续驱动螺钉，包括一个联接到螺丝刀的壳体，一个在壳体中可往复运动地滑动运动的滑动构件，以及一个用于一个螺距固定带的机构，到磁带上的相邻螺钉之间的距离。带进给机构包括设置在壳体中的引导槽和枢转地连接到滑动构件的两臂杆，并且枢转地运动，以通过安装在倾斜部分的倾斜部分中的销来将螺钉分度到与螺丝刀对准的位置导槽。具有棘爪的棘爪构件，其在带的一个侧边缘处装配到一个凹槽中，枢转地连接到双臂杆的另一个臂的端部，并且通过弹簧朝向带偏压。同时，在带的相反侧进入其中一个槽的另一个棘爪构件枢转地连接到滑动构件并朝向带偏压。

5. 发明申请

US20080128896A1 Semiconductor apparatus and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080128896A1
公开(公告)日：2008-06-05
申请号：US11999387
申请日：2007-12-04
申请人： Keiji Toh , Hidehito Kubo , Masahiko Kimbara , Haruo Takagi , Daizo Kamiyama
发明人： Keiji Toh , Hidehito Kubo , Masahiko Kimbara , Haruo Takagi , Daizo Kamiyama
IPC分类号： H01L23/36 , H01L21/58
CPC分类号： H01L23/473 , H01L24/33 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/3011 , H01L2924/351 , H01L2924/00
摘要： A semiconductor apparatus includes a semiconductor device, a cooler of a forced cooling type, and a heat mass. Heat generated in the semiconductor device is conducted to the cooler. The heat mass comes into junction with the semiconductor device with solder so as to be thermally combined with the semiconductor device. The heat mass functions also as an electrode.
摘要翻译：半导体装置包括半导体装置，强制冷却型的冷却器和热质。在半导体器件中产生的热量被传导到冷却器。热量与焊料与半导体器件结合，以便与半导体器件热结合。热质也用作电极。

6. 发明授权

US5061863A Transistor provided with a current detecting function 失效
标题翻译：具有电流检测功能的晶体管
公开(公告)号：US5061863A
公开(公告)日：1991-10-29
申请号：US523215
申请日：1990-05-14
申请人： Shogo Mori , Shinobu Aoki , Haruo Takagi
发明人： Shogo Mori , Shinobu Aoki , Haruo Takagi
IPC分类号： H01L23/64 , H03K17/082
CPC分类号： H03K17/0822 , H01L23/647 , H01L2924/0002
摘要： A transistor provided with a current detecting function does not need any external resistance to detect current but uses a part of the electrode wiring through which main current flows as a resistance to prevent power loss. It detects the magnitude of main current on the basis of voltage drop caused by the resistance. Further, a stable sense voltage can be obtained without being affected by temperature change and sense voltages caused at the both ends of a sense resistance can be maintained constant with temperature change. Sense voltages can accurately correspond to the magnitude of main current flowing through a main transistor to enable excess current to be detected accurately.
摘要翻译：具有电流检测功能的晶体管不需要任何外部电阻来检测电流，而是使用主电流流过的电极布线的一部分作为电阻来防止功率损耗。它基于由电阻引起的电压降来检测主电流的大小。此外，可以在不受温度变化的影响的情况下获得稳定的感测电压，并且可以在感测电阻的两端引起的感测电压在温度变化时保持恒定。感测电压可以精确地对应于流过主晶体管的主电流的大小，以便能够精确地检测过电流。

7. 发明授权

US08030760B2 Semiconductor apparatus and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08030760B2
公开(公告)日：2011-10-04
申请号：US11999387
申请日：2007-12-04
申请人： Keiji Toh , Hidehito Kubo , Masahiko Kimbara , Haruo Takagi , Daizo Kamiyama
发明人： Keiji Toh , Hidehito Kubo , Masahiko Kimbara , Haruo Takagi , Daizo Kamiyama
IPC分类号： H01L23/34 , H01L21/58
CPC分类号： H01L23/473 , H01L24/33 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/3011 , H01L2924/351 , H01L2924/00
摘要： A semiconductor apparatus includes a semiconductor device, a cooler of a forced cooling type, and a heat mass. Heat generated in the semiconductor device is conducted to the cooler. The heat mass comes into junction with the semiconductor device with solder so as to be thermally combined with the semiconductor device. The heat mass functions also as an electrode.
摘要翻译：半导体装置包括半导体装置，强制冷却型的冷却器和热质。在半导体器件中产生的热量被传导到冷却器。热量与焊料与半导体器件结合，以便与半导体器件热结合。热质也用作电极。

8. 发明授权

US5304822A Static induction type semiconductor device with multiple source contact regions 失效
标题翻译：具有多个源极接触区域的静态感应型半导体器件
公开(公告)号：US5304822A
公开(公告)日：1994-04-19
申请号：US877700
申请日：1992-05-01
申请人： Haruo Takagi , Shinobu Aoki , Yukihiko Watanabe , Hiroshi Tadano
发明人： Haruo Takagi , Shinobu Aoki , Yukihiko Watanabe , Hiroshi Tadano
IPC分类号： H01L29/417 , H01L29/772 , H01L29/80 , H01L29/74
CPC分类号： H01L29/41741 , H01L29/7722
摘要： A static induction type semiconductor device of a surface gate type, includes a source region, gate region and drain region. A channel region is formed between the drain region and the source region, such that when a bias potential is applied between the gate region and the source region, carriers flow to the drain region from the source region via the channel region. A source electrode is provided on the semiconductor layer. A source contact region is provided between the source electrode and the source region to establish electrical connection therebetween. The source contact region is segmented into a plurality of smaller regions or sections whose total area is smaller than the area of the corresponding portion of the source region, for improving the current gain, and for preventing or significantly reducing local current concentration.
摘要翻译：表面栅型静电感应型半导体器件包括源极区，栅极区和漏极区。在漏极区域和源极区域之间形成沟道区域，使得当在栅极区域和源极区域之间施加偏置电位时，载流子经由沟道区域从源极区域流到漏极区域。源电极设置在半导体层上。源极接触区域设置在源电极和源极区域之间以在它们之间建立电连接。源极接触区域被分割为总面积小于源极区域的相应部分的面积的多个较小区域或部分，用于改善电流增益，以及用于防止或显着降低局部电流集中。

9. 发明授权

US5083483A Screw positioning device 失效
标题翻译：螺丝定位装置
公开(公告)号：US5083483A
公开(公告)日：1992-01-28
申请号：US636844
申请日：1991-01-02
申请人： Haruo Takagi
发明人： Haruo Takagi
IPC分类号： B25B23/04
CPC分类号： B25B23/045
摘要： In a screw positioning device, a slide element (5) is slidably fitted, through a return spring (10), in a slide guide case (3) which is mounted to a forward end of a screw driver tool (1), and a pin (13) is provided on the slide element (5) and is movable within an elongated bore (11) formed in the slide guide case (3) in a longitudinal direction, during the sliding movement of the slide element (5).A transfer mechanism is provided which transfers a screw holding belt (15) by a single screw section when the slide element (5) is pushed into the slide guide case (3) part of the way. A holding mechanism is also provided which restricts return of the pin (13) to restrict return of the slide element (5).
摘要翻译：在螺钉定位装置中，滑动元件（5）通过复位弹簧（10）可滑动地装配在安装到螺丝刀工具（1）的前端的滑动导向壳体（3）中，并且销（13）设置在滑动元件（5）上，并且在滑动元件（5）的滑动运动期间可在纵向方向上在形成于滑动导向壳体（3）中的细长孔（11）内移动。提供了一种传送机构，当滑动元件（5）被推入滑动导向壳体（3）的一部分时，通过单个螺杆部分传送螺钉保持带（15）。还提供一种限制销（13）的返回以限制滑动元件（5）的返回的保持机构。

10. 发明授权

US4994870A Static induction type semiconductor device 失效
标题翻译：静电感应式半导体器件
公开(公告)号：US4994870A
公开(公告)日：1991-02-19
申请号：US563680
申请日：1990-08-02
申请人： Shinobu Aoki , Haruo Takagi , Hiroshi Tadano , Takashi Suzuki , Susumu Sugiyama
发明人： Shinobu Aoki , Haruo Takagi , Hiroshi Tadano , Takashi Suzuki , Susumu Sugiyama
IPC分类号： H01L29/74 , H01L29/772 , H01L29/80
CPC分类号： H01L29/7722
摘要： A static induction type semiconductor device is used as a power transistor. It is of the surface gate type and is used for providing a high current density. The static induction type semiconductor device provides a plurality of small source regions surrounded by a gate region. According to this structure, the channel region beneath the source region becomes small, thereby increasing the stored carrier density and enabling a large main current to flow when using a small gate current, thereby achieving a high current amplification ratio. Further, when it flows the main current is distributed to the source regions, thus preventing increase in on-voltage.
摘要翻译：静电感应型半导体器件用作功率晶体管。它是表面栅型，用于提供高电流密度。静电感应型半导体器件提供由栅极区域包围的多个小的源极区域。根据该结构，源极区域下方的沟道区域变小，从而增加存储的载流子密度，并且在使用小栅极电流时能够使大的主电流流动，从而实现高电流放大率。此外，当其流动时，主电流被分配到源极区域，从而防止导通电压的增加。

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