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1. 发明授权

US5184201A Static induction transistor 失效
标题翻译：静电感应晶体管
公开(公告)号：US5184201A
公开(公告)日：1993-02-02
申请号：US793235
申请日：1991-11-08
申请人： Shinobu Aoki , Haruo Takagi , Takanori Okabe
发明人： Shinobu Aoki , Haruo Takagi , Takanori Okabe
IPC分类号： H01L21/335 , H01L29/739
CPC分类号： H01L29/66416 , H01L29/739
摘要： A static induction transistor has a gate region formed with a protrusion extending toward a drain region. The protrusion is located toward one side of the gate region such that a shallower gate region lies between the protrusion and the nearest source region. When a reverse voltage higher than the withstand voltage is applied between the gate and drain, avalanche breakdown occurs only in a region immediately below the protrusion, and no hot carriers are allowed to flow into a source region. Deterioration of the voltage-withstanding property and destruction of the device is thereby prevented. Another embodiment has a semiconductor region of a first conductivity type formed in a peripheral portion of a semiconductor layer of the first conductivity type in which a plurality of gate regions are disposed and adjacent a first major surface thereof. The distance between the semiconductor region and the nearest gate region is less than the distance between gate and drain regions such that the withstand voltage between the semiconductor region and the nearest gate region is less than that between the gate region and drain region. When a reverse bias voltage higher than a withstand voltage is applied between the gate and drain, the avalanche breakdown occurs only between the semiconductor region and the gate region nearest thereto.
摘要翻译：静电感应晶体管具有形成有朝向漏极区延伸的突起的栅极区域。突起位于栅极区域的一侧，使得较浅的栅极区域位于突起和最近的源极区域之间。当在栅极和漏极之间施加高于耐压的反向电压时，雪崩击穿仅在突起的正下方的区域中发生，并且不允许热载流子流入源区。从而防止了耐压性能的劣化和装置的破坏。另一实施例具有形成在第一导电类型的半导体层的周边部分中的第一导电类型的半导体区域，其中多个栅极区域设置并邻近其第一主表面。半导体区域和最近的栅极区域之间的距离小于栅极和漏极区域之间的距离，使得半导体区域和最近的栅极区域之间的耐受电压小于栅极区域和漏极区域之间的耐受电压。当在栅极和漏极之间施加高于耐电压的反向偏置电压时，雪崩击穿仅在半导体区域和与其最接近的栅极区域之间发生。

2. 发明授权

US5061863A Transistor provided with a current detecting function 失效
标题翻译：具有电流检测功能的晶体管
公开(公告)号：US5061863A
公开(公告)日：1991-10-29
申请号：US523215
申请日：1990-05-14
申请人： Shogo Mori , Shinobu Aoki , Haruo Takagi
发明人： Shogo Mori , Shinobu Aoki , Haruo Takagi
IPC分类号： H01L23/64 , H03K17/082
CPC分类号： H03K17/0822 , H01L23/647 , H01L2924/0002
摘要： A transistor provided with a current detecting function does not need any external resistance to detect current but uses a part of the electrode wiring through which main current flows as a resistance to prevent power loss. It detects the magnitude of main current on the basis of voltage drop caused by the resistance. Further, a stable sense voltage can be obtained without being affected by temperature change and sense voltages caused at the both ends of a sense resistance can be maintained constant with temperature change. Sense voltages can accurately correspond to the magnitude of main current flowing through a main transistor to enable excess current to be detected accurately.
摘要翻译：具有电流检测功能的晶体管不需要任何外部电阻来检测电流，而是使用主电流流过的电极布线的一部分作为电阻来防止功率损耗。它基于由电阻引起的电压降来检测主电流的大小。此外，可以在不受温度变化的影响的情况下获得稳定的感测电压，并且可以在感测电阻的两端引起的感测电压在温度变化时保持恒定。感测电压可以精确地对应于流过主晶体管的主电流的大小，以便能够精确地检测过电流。

3. 发明授权

US5304822A Static induction type semiconductor device with multiple source contact regions 失效
标题翻译：具有多个源极接触区域的静态感应型半导体器件
公开(公告)号：US5304822A
公开(公告)日：1994-04-19
申请号：US877700
申请日：1992-05-01
申请人： Haruo Takagi , Shinobu Aoki , Yukihiko Watanabe , Hiroshi Tadano
发明人： Haruo Takagi , Shinobu Aoki , Yukihiko Watanabe , Hiroshi Tadano
IPC分类号： H01L29/417 , H01L29/772 , H01L29/80 , H01L29/74
CPC分类号： H01L29/41741 , H01L29/7722
摘要： A static induction type semiconductor device of a surface gate type, includes a source region, gate region and drain region. A channel region is formed between the drain region and the source region, such that when a bias potential is applied between the gate region and the source region, carriers flow to the drain region from the source region via the channel region. A source electrode is provided on the semiconductor layer. A source contact region is provided between the source electrode and the source region to establish electrical connection therebetween. The source contact region is segmented into a plurality of smaller regions or sections whose total area is smaller than the area of the corresponding portion of the source region, for improving the current gain, and for preventing or significantly reducing local current concentration.
摘要翻译：表面栅型静电感应型半导体器件包括源极区，栅极区和漏极区。在漏极区域和源极区域之间形成沟道区域，使得当在栅极区域和源极区域之间施加偏置电位时，载流子经由沟道区域从源极区域流到漏极区域。源电极设置在半导体层上。源极接触区域设置在源电极和源极区域之间以在它们之间建立电连接。源极接触区域被分割为总面积小于源极区域的相应部分的面积的多个较小区域或部分，用于改善电流增益，以及用于防止或显着降低局部电流集中。

4. 发明授权

US4994870A Static induction type semiconductor device 失效
标题翻译：静电感应式半导体器件
公开(公告)号：US4994870A
公开(公告)日：1991-02-19
申请号：US563680
申请日：1990-08-02
申请人： Shinobu Aoki , Haruo Takagi , Hiroshi Tadano , Takashi Suzuki , Susumu Sugiyama
发明人： Shinobu Aoki , Haruo Takagi , Hiroshi Tadano , Takashi Suzuki , Susumu Sugiyama
IPC分类号： H01L29/74 , H01L29/772 , H01L29/80
CPC分类号： H01L29/7722
摘要： A static induction type semiconductor device is used as a power transistor. It is of the surface gate type and is used for providing a high current density. The static induction type semiconductor device provides a plurality of small source regions surrounded by a gate region. According to this structure, the channel region beneath the source region becomes small, thereby increasing the stored carrier density and enabling a large main current to flow when using a small gate current, thereby achieving a high current amplification ratio. Further, when it flows the main current is distributed to the source regions, thus preventing increase in on-voltage.
摘要翻译：静电感应型半导体器件用作功率晶体管。它是表面栅型，用于提供高电流密度。静电感应型半导体器件提供由栅极区域包围的多个小的源极区域。根据该结构，源极区域下方的沟道区域变小，从而增加存储的载流子密度，并且在使用小栅极电流时能够使大的主电流流动，从而实现高电流放大率。此外，当其流动时，主电流被分配到源极区域，从而防止导通电压的增加。

5. 发明授权

US07790936B2 Process for preparing alkylated aromatic compound 有权
标题翻译：制备烷基化芳族化合物的方法
公开(公告)号：US07790936B2
公开(公告)日：2010-09-07
申请号：US12526542
申请日：2008-02-12
申请人： Toshihiro Takai , Michiaki Umeno , Shinobu Aoki , Terunori Fujita , Tsuneyuki Ohkubo
发明人： Toshihiro Takai , Michiaki Umeno , Shinobu Aoki , Terunori Fujita , Tsuneyuki Ohkubo
IPC分类号： C07C33/18 , C07C39/00 , C07C15/067 , C07C2/68
CPC分类号： C07C37/08 , B01J23/80 , B01J29/06 , B01J29/072 , B01J29/146 , B01J29/24 , B01J29/46 , B01J29/70 , B01J29/76 , B01J29/7615 , B01J29/7676 , B01J35/0006 , B01J37/0009 , B01J37/031 , C07C2/867 , C07C45/53 , C07C407/00 , C07C409/10 , C07C2523/80 , C07C2529/08 , C07C2529/18 , C07C2529/40 , C07C2529/70 , Y02P20/52 , C07C15/085 , C07C49/08 , C07C39/04
摘要： The present invention provides a process in which a ketone is directly reacted with an aromatic compound in a single reaction step to obtain the corresponding alkylated aromatic compound in a higher yield. By reacting an aromatic compound with a ketone and hydrogen in the presence of a solid acid substance and a catalyst composition containing Cu and Zn in a ratio of Zn to Cu ranging from 0.70 to 1.60 (atomic ratio), the corresponding alkylated aromatic compound is prepared.
摘要翻译：本发明提供一种方法，其中酮在一个反应步骤中与芳族化合物直接反应，以更高的收率获得相应的烷基化芳族化合物。通过在固体酸物质和含有Cu和Zn的催化剂组合物的存在下使芳香族化合物与酮和氢反应，比例为0.70〜1.60（原子比）的Zn与Cu的比例，制备相应的烷基化芳香族化合物。

6. 发明申请

US20100185034A1 PROCESS FOR PRODUCING AROMATIC HYDROCARBON 审中-公开
标题翻译：生产芳香烃的方法
公开(公告)号：US20100185034A1
公开(公告)日：2010-07-22
申请号：US12452990
申请日：2008-07-31
申请人： Toru Nishimura , Shinobu Aoki , Yan Liu
发明人： Toru Nishimura , Shinobu Aoki , Yan Liu
IPC分类号： C07C2/52
CPC分类号： B01J29/7876 , B01J29/48 , B01J37/0201 , B01J37/08 , B01J37/18 , C07C2/76 , C07C2529/78 , C10G2400/30 , C07C15/00
摘要： Provided is a process for producing an aromatic hydrocarbon using a molybdenum-containing solid catalyst, more specifically a process for producing an aromatic hydrocarbon efficiently from a lower hydrocarbon gas essentially containing methane by activating the molybdenum-containing solid catalyst with maintaining a high yield for a long period of time.The process comprises a pre-contacting step of allowing a molybdenum-containing solid catalyst to contact with a pre-contacting gas comprising at least one selected from a lower hydrocarbon and a hydrogen gas; and a reaction step of allowing the pre-contacted catalyst to contact with a raw material gas essentially containing methane, to generate an aromatic hydrocarbon, wherein the starting temperature in the pre-contacting step is lower than the reaction temperature, and the temperature during the pre-contacting step from the beginning to the end is not over the reaction temperature.
摘要翻译：本发明提供使用含钼固体催化剂制造芳族烃的方法，更具体地说，是从基本上含有甲烷的低级烃气体中有效地制备芳族烃的方法，其中通过使维持高收率的钼含量的固体催化剂活化很长一段时间该方法包括使含钼固体催化剂与包含选自低级烃和氢气中的至少一种的预接触气体接触的预接触步骤; 以及使预接触催化剂与基本上含甲烷的原料气体接触以产生芳族烃的反应步骤，其中预接触步骤中的起始温度低于反应温度，而在从开始到结束的预接触步骤不超过反应温度。

7. 发明授权

US5940605A Simulation method and simulation system 失效
标题翻译：仿真方法和仿真系统
公开(公告)号：US5940605A
公开(公告)日：1999-08-17
申请号：US659186
申请日：1996-06-06
申请人： Shinobu Aoki
发明人： Shinobu Aoki
IPC分类号： G06F11/28 , G06F9/455 , G06F11/36 , G06F9/445
CPC分类号： G06F11/3664
摘要： At least two test instructions are sequentially simulated. Concurrently the number of clocks taken for simulating at least two test instructions are counted. The peripheral processing program relating to at least two test instructions are simulated for the number of clocks counted after simulating at least two test instructions.
摘要翻译：依次模拟至少两个测试指令。同时计数用于模拟至少两个测试指令的时钟数。在模拟至少两个测试指令之后，对与至少两个测试指令相关的外设处理程序进行模拟。

8. 发明授权

US5179224A Preparation process of cinnamate ester 失效
标题翻译：肉桂酸酯的制备方法
公开(公告)号：US5179224A
公开(公告)日：1993-01-12
申请号：US769481
申请日：1991-10-01
申请人： Usaji Takaki , Yoshihiro Yamamoto , Toshio Matsuhisa , Isamu Sudo , Shinobu Aoki
发明人： Usaji Takaki , Yoshihiro Yamamoto , Toshio Matsuhisa , Isamu Sudo , Shinobu Aoki
IPC分类号： C07C69/618
CPC分类号： C07C69/618 , Y02P20/584
摘要： Disclosed herein is a process for preparing a corresponding cinnamate ester by reacting a styrene compound, carbon monoxide, an alcohol and oxygen by the use of (1) metallic palladium or a compound thereof, (2) a copper compound, (3) a compound of at least one metal selected from Groups 4A, 5A, 7A, 8A (the iron group only) and 2B in the Periodic Table and (4) a halogen compound as a catalyst which comprises treating the catalyst components recovered from the reaction liquid after completion of the reaction with an oxidizing agent in the presence of an organic acid to regenerate their catalytic activity, using the resulting catalyst components again in the reaction as a catalyst and repeating the foregoing procedure.The regenerated catalyst is recovered in catalytic activity to the extent of that of a fresh catalyst and thus gives a high reaction performance in the subsequent reaction. Thus, the catalyst containing expensive metal can be used circulatively.
摘要翻译：本文公开了通过使用（1）金属钯或其化合物使苯乙烯化合物，一氧化碳，醇和氧反应制备相应的肉桂酸酯的方法，（2）铜化合物，（3）化合物的选自4A，5A，7A，8A（仅铁族）和2B中的至少一种金属，以及（4）作为催化剂的卤素化合物，其包括在完成后处理从反应液中回收的催化剂成分在有机酸存在下与氧化剂反应以再生其催化活性，在反应中再次使用所得催化剂组分作为催化剂，并重复上述步骤。再生催化剂的催化活性回收到新鲜催化剂的催化活性，因此在随后的反应中得到高的反应性能。因此，可以循环使用含有贵金属的催化剂。

9. 发明授权

US08536394B2 Process for producing alkylated aromatic compounds and process for producing phenols 有权
标题翻译：烷基化芳香族化合物的制造方法和酚类的制造方法
公开(公告)号：US08536394B2
公开(公告)日：2013-09-17
申请号：US13256626
申请日：2010-03-12
申请人： Tsuneyuki Ohkubo , Shinobu Aoki , Masayasu Ishibashi , Masao Imai , Terunori Fujita , Kenji Fujiwara
发明人： Tsuneyuki Ohkubo , Shinobu Aoki , Masayasu Ishibashi , Masao Imai , Terunori Fujita , Kenji Fujiwara
IPC分类号： C07C2/86 , C07C37/08
CPC分类号： C07C2/867 , B01J21/08 , B01J23/50 , B01J29/7007 , B01J35/0006 , B01J37/0201 , B01J37/0205 , B01J37/04 , C07C37/08 , C07C2521/04 , C07C2521/06 , C07C2521/08 , C07C2521/12 , C07C2521/18 , C07C2523/42 , C07C2523/44 , C07C2523/50 , C07C2523/68 , C07C2527/08 , C07C2527/10 , C07C2527/232 , C07C2527/25 , C07C2527/26 , C07C2529/08 , C07C2529/18 , C07C2529/70 , C07C2531/04 , Y02P20/52 , C07C15/085 , C07C39/04
摘要： According to a process of the invention, a ketone, an aromatic compound and hydrogen as starting materials are reacted together in a single reaction step to produce an alkylaromatic compound in high yield. A process for producing phenols in the invention includes a step of performing the above alkylation process and does not increase the number of steps compared to the conventional cumene process. The process for producing alkylated aromatic compounds includes reacting an aromatic compound such as benzene, a ketone such as acetone and hydrogen in the presence of a solid acid substance, preferably a zeolite, and a silver-containing catalyst.
摘要翻译：根据本发明的方法，将酮，芳族化合物和作为原料的氢在单一反应步骤中一起反应，以高产率生成烷基芳族化合物。在本发明中生产酚类的方法包括进行上述烷基化方法并且不增加与常规异丙苯法相比的步骤数量的步骤。制备烷基化芳族化合物的方法包括在固体酸物质，优选沸石和含银催化剂存在下使芳香化合物如苯，丙酮和氢等酮反应。

10. 发明授权

US08476887B2 DC to DC converter with pseudo constant switching frequency 有权
标题翻译：直流到直流转换器具有伪恒定开关频率
公开(公告)号：US08476887B2
公开(公告)日：2013-07-02
申请号：US12367384
申请日：2009-02-06
申请人： Tetsuo Tateishi , Shinobu Aoki
发明人： Tetsuo Tateishi , Shinobu Aoki
IPC分类号： G05F1/40
CPC分类号： G05F1/46 , H02M1/44 , H02M3/1588 , H02M2001/0032 , Y02B70/1466 , Y02B70/16
摘要： Various apparatuses, methods and systems for a DC to DC converter with a pseudo constant switching frequency are disclosed herein. For example, some embodiments provide a DC to DC converter having a switch connected to a switching node to control a voltage of the switching node, and a switching controller that is adapted to turn on and off the switch at a substantially constant frequency based at least in part on the voltage of the switching node. The switching controller includes a modulator connected to a control electrode of the switch and that is adapted to actuate and deactuate the switch, and a first timer that is connected to the switching node and to the modulator. The first timer uses the voltage of the switching node to determine an on-time for the switch.
摘要翻译：本文公开了具有伪恒定切换频率的DC-DC转换器的各种装置，方法和系统。例如，一些实施例提供一种具有连接到开关节点的开关以控制开关节点的电压的DC至DC转换器，以及适于基于至少基本上恒定的频率来接通和断开开关的开关控制器部分是交换节点的电压。开关控制器包括连接到开关的控制电极并且适于致动和停用开关的调制器，以及连接到开关节点和调制器的第一定时器。第一个定时器使用交换节点的电压来确定交换机的接通时间。

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