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1. 发明授权

US06939926B2 Phenol novolak resin, production process thereof, and positive photoresist composition using the same 有权
标题翻译：苯酚酚醛清漆树脂，其制备方法和使用其的正性光致抗蚀剂组合物
公开(公告)号：US06939926B2
公开(公告)日：2005-09-06
申请号：US10773294
申请日：2004-02-09
申请人： Ken Miyagi , Yasuhide Ohuchi , Atsuko Hirata , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Yasuhide Ohuchi , Atsuko Hirata , Kousuke Doi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08G8/10 , C08G14/04 , G03F7/023 , C08G8/28
CPC分类号： G03F7/0236 , C08G14/04
摘要： A phenol novolak resin has a peak intensity ratio of ortho-ortho bond (o-o)/ortho-para bond (o-p)/para-para bond (p-p) in a resin structure not substantially varying in each molecular weight fraction and has a weight average molecular weight (Mw) of 3000 to 20000 in terms of polystyrene, which peak intensity ratio is detected by 13C-NMR analysis. The phenol novolak resin can form both dense pattern and isolation pattern with good shapes in the formation of a fine resist pattern of not more than 0.35 μm and has satisfactory sensitivity, definition, and focal depth range properties, and has a resin composition being uniform in each molecular weight fraction. A process for producing the phenol novolak resin, and a positive photoresist composition using the resin are also provided.
摘要翻译：苯酚酚醛清漆树脂在每个分子量分数基本上不变的树脂结构中具有邻 - 邻键（oo）/邻 - 对键（op）/对 - 对位键（pp）的峰强度比，并具有重均分子量分子量（Mw）为聚苯乙烯换算为3000〜20000，通过13 C-NMR分析检测出峰强度比。苯酚酚醛清漆树脂可以形成具有不大于0.35μm的精细抗蚀剂图案的良好形状的致密图案和隔离图案，并且具有令人满意的灵敏度，定义和焦深范围性质，并且具有均匀的树脂组合物每个分子量分数。还提供了一种制备苯酚酚醛清漆树脂的方法和使用该树脂的正性光致抗蚀剂组合物。

2. 发明授权

US06187500B1 Positive photoresist compositions and multilayer resist materials using same 有权
标题翻译：正光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US06187500B1
公开(公告)日：2001-02-13
申请号：US09432417
申请日：1999-11-02
申请人： Ken Miyagi , Kousuke Doi , Atsuko Hirata , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Kousuke Doi , Atsuko Hirata , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/0236 , C08G8/20 , C08G8/28 , C08L61/12 , C08L61/14
摘要： In a positive photoresist composition including (A) an alkali-soluble novolak resin and (B) a naphthoquinonediazide ester, the alkali-soluble novolak resin is obtained synthetically by condensation of phenol compounds and an aldehyde or ketone, and the phenol compounds include, for example, 1% to 20% by mole of hydroquinone, 30% to 95% by mole of m-cresol and 2% to 50% by mole of 2,5-xylenol. Thus, a high-definition positive photoresist composition can be obtained, which inhibits the formation of scum, and is satisfactory in sensitivity, sectional shape, focal depth range and other properties even in a process for the formation of an ultrafine resist pattern of 0.30 &mgr;m or below by lithography using i-ray.
摘要翻译：在包含（A）碱溶性酚醛清漆树脂和（B）萘醌二叠氮化物酯的正性光致抗蚀剂组合物中，通过酚化合物和醛或酮的缩合合成获得碱溶性酚醛清漆树脂，并且酚化合物包括例如，氢醌的1〜20摩尔％，间甲酚的30〜95摩尔％，2,5-二甲苯酚2〜50摩尔％。因此，即使在形成0.30微米的超细抗蚀剂图案的工艺中，也可以获得抑制浮渣形成的高分辨正性光致抗蚀剂组合物，并且在灵敏度，截面形状，焦深范围和其它性能方面令人满意以下使用i-ray进行平版印刷。

3. 发明授权

US06475694B2 Positive photoresist composition comprising a phenolic compound having both an acid-decomposable group and a naphthoquinonediazide sulfonyl group 失效
标题翻译：正性光致抗蚀剂组合物，其包含具有酸可分解基团和萘醌二叠氮化物磺酰基基团的酚类化合物
公开(公告)号：US06475694B2
公开(公告)日：2002-11-05
申请号：US09863389
申请日：2001-05-24
申请人： Kousuke Doi , Ken Miyagi , Atsuko Hirata , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kousuke Doi , Ken Miyagi , Atsuko Hirata , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/0236 , G03F7/022 , G03F7/0226
摘要： A positive photoresist composition includes (A) an alkali-soluble resin, in which part of phenolic hydroxyl groups is protected by an acid-decomposable group; (B) a quinonediazide ester; and (C) a compound which generates an acid upon irradiation of light with a wavelength of 365 nm. This positive photoresist composition can form a fine pattern of about 0.35 &mgr;m in the photolithographic process using i-ray (365 nm), is excellent in focal depth range properties in such an ultrafine region, and has a high sensitivity.
摘要翻译：正型光致抗蚀剂组合物包括（A）碱性可溶性树脂，其中部分酚羟基被酸可分解基团保护; （B）醌二叠氮酯; 和（C）在365nm波长的光照射下产生酸的化合物。该正性光致抗蚀剂组合物可以在使用i射线（365nm）的光刻工艺中形成约0.35μm的精细图案，在这样的超细区域中的焦深深度范围特性优异，并且具有高灵敏度。

4. 发明授权

US06417317B1 Novolak resin precursor, novolak resin and positive photoresist composition containing the novolak resin 失效
标题翻译：酚醛清漆树脂前体，酚醛清漆树脂和含有酚醛清漆树脂的正性光致抗蚀剂组合物
公开(公告)号：US06417317B1
公开(公告)日：2002-07-09
申请号：US09459606
申请日：1999-12-13
申请人： Ken Miyagi , Kousuke Doi , Ryuusaku Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Kousuke Doi , Ryuusaku Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08G1404
CPC分类号： G03F7/0236
摘要： A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho-ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.
摘要翻译：酚醛清漆树脂前体由键合的酚部分组成，相对于每个酚部分的羟基的邻位或对位中的氢原子之一被具有1至3个碳原子的烷基或烯基取代，并且其他两个氢原子通过亚甲基键键合。邻位键合的含量相对于总亚甲基的数量为30〜70％，前体的重均分子量为300〜10000。从该前体获得酚醛清漆树脂，正性光致抗蚀剂组合物包含该酚醛清漆树脂。本发明提供一种正光致抗蚀剂组合物，其包含较少的双核化合物，抑制浮渣形成，在定义和涂布性能方面优异，并提供具有令人满意的耐热性的抗蚀剂图案。

5. 发明授权

US06207788B1 Novolak resin precursor, novolak resin and positive photoresist composition containing the novolak resin 失效
标题翻译：酚醛清漆树脂前体，酚醛清漆树脂和含有酚醛清漆树脂的正性光致抗蚀剂组合物
公开(公告)号：US06207788B1
公开(公告)日：2001-03-27
申请号：US09122177
申请日：1998-07-24
申请人： Ken Miyagi , Kousuke Doi , Ryuusaku Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Ken Miyagi , Kousuke Doi , Ryuusaku Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C08G1404
CPC分类号： G03F7/0236
摘要： A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho—ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.
摘要翻译：酚醛清漆树脂前体由键合的酚部分组成，相对于每个酚部分的羟基的邻位或对位中的氢原子之一被具有1至3个碳原子的烷基或烯基取代，并且其他两个氢原子通过亚甲基键键合。邻位键合的含量相对于总亚甲基的数量为30〜70％，前体的重均分子量为300〜10000。从该前体获得酚醛清漆树脂，正性光致抗蚀剂组合物包含该酚醛清漆树脂。本发明提供一种正光致抗蚀剂组合物，其包含较少的双核化合物，抑制浮渣形成，在定义和涂布性能方面优异，并提供具有令人满意的耐热性的抗蚀剂图案。

6. 发明授权

US06620978B2 Positive photoresist composition and process for synthesizing polyphenol compound 失效
标题翻译：正光致抗蚀剂组合物和合成多酚化合物的方法
公开(公告)号：US06620978B2
公开(公告)日：2003-09-16
申请号：US10207840
申请日：2002-07-31
申请人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C07C3912
CPC分类号： G03F7/022
摘要： The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.
摘要翻译：本发明提供了包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物，成分（B）是例如2,6-双[4-羟基-3 - （2-羟基-3,5-二甲基苄基）-2,5-二甲基苄基] -4-甲基苯酚，其中平均酯化度为20％至80％。

7. 发明授权

US06492085B1 Positive photoresist composition and process and synthesizing polyphenol compound 失效
标题翻译：正光致抗蚀剂组合物和工艺合成多酚化合物
公开(公告)号：US06492085B1
公开(公告)日：2002-12-10
申请号：US09635404
申请日：2000-08-10
申请人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/022
摘要： The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.
摘要翻译：本发明提供了包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物，成分（B）是例如2,6-双[4-羟基-3 - （2-羟基-3,5-二甲基苄基）-2,5-二甲基苄基] -4-甲基苯酚，其中平均酯化度为20％至80％。

8. 发明申请

US20050244740A1 Chemically amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大的正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20050244740A1
公开(公告)日：2005-11-03
申请号：US10522036
申请日：2004-05-19
申请人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
发明人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
IPC分类号： G03C1/492 , G03F7/039
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
摘要翻译：本发明提供了作为瓶中的抗蚀剂溶液的储存稳定性优异的化学增幅型正性光致抗蚀剂组合物。将酚醛清漆树脂或羟基苯乙烯类树脂与交联剂反应，得到轻微碱溶性或碱不溶性树脂，其具有在酸存在下在碱溶液中的溶解度增强的性质，然后将其溶解于有机溶剂与（B）在辐射照射下产生酸的化合物一起获得化学扩增型正性光致抗蚀剂组合物，其中酸成分的含量为10ppm以下。

9. 发明申请

US20070117045A1 CHEMICAL AMPLIFICATION TYPE POSITIVE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 审中-公开
标题翻译：化学放大型积极光电组合物和电阻形成方法
公开(公告)号：US20070117045A1
公开(公告)日：2007-05-24
申请号：US11622988
申请日：2007-01-12
申请人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
发明人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
摘要翻译：本发明提供一种化学放大型正性光致抗蚀剂组合物，其作为瓶中的抗蚀剂溶液具有优异的储存稳定性将酚醛清漆树脂或羟基乙烯基树脂与交联剂反应，得到略微碱溶性或碱不溶性树脂，其具有在碱的存在下，在溶解于有机溶剂中的酸的存在下，与（B）在辐射照射下产生酸的化合物一起溶解在碱溶液中的这种性质得到化学扩增型正性光致抗蚀剂组分，其中酸成分的含量为10ppm以下。

10. 发明授权

US07358028B2 Chemically amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大的正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07358028B2
公开(公告)日：2008-04-15
申请号：US10522036
申请日：2004-05-19
申请人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
发明人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
摘要翻译：本发明提供了作为瓶中的抗蚀剂溶液的储存稳定性优异的化学增幅型正性光致抗蚀剂组合物。将酚醛清漆树脂或羟基苯乙烯类树脂与交联剂反应，得到轻微碱溶性或碱不溶性树脂，其具有在酸存在下在碱溶液中的溶解度增强的性质，然后将其溶解于有机溶剂与（B）在辐射照射下产生酸的化合物一起获得化学扩增型正性光致抗蚀剂组合物，其中酸成分的含量为10ppm以下。

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