专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5888298A Member-handling mechanism, and member-handling jig for a crystal pulling apparatus 失效
标题翻译：会员处理机构和用于晶体拉制装置的成员处理夹具
公开(公告)号：US5888298A
公开(公告)日：1999-03-30
申请号：US759223
申请日：1996-12-05
申请人： Takahiro Yanagimachi , Satoshi Soeta , Atsushi Iwasaki , Shinobu Takeyasu
发明人： Takahiro Yanagimachi , Satoshi Soeta , Atsushi Iwasaki , Shinobu Takeyasu
IPC分类号： B66C1/66 , C30B15/00 , C30B15/30 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/30 , C30B15/00 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1072
摘要： A method, mechanisms and jig for handling a member of a crystal pulling apparatus are disclosed. The crystal pulling apparatus grows a single crystal from a melt of a crystalline material by a CZ method. Handling of a graphite crucible or the like of the crystal pulling apparatus, including a vertical moving operation, a swinging operation, or the like, is performed using a crane and a lifting jig. This makes it possible to readily move the member of the crystal pulling apparatus vertically and otherwise without relying on manual labor.
摘要翻译：公开了一种用于处理拉晶装置的构件的方法，机构和夹具。晶体拉制装置通过CZ法从结晶材料的熔体中生长单晶。使用起重机和提升夹具来执行包括垂直移动操作，摆动操作等的晶体牵引装置的石墨坩埚等的处理。这使得可以在不依赖于手工劳动的情况下垂直地或以其他方式容易地移动晶体牵引装置的构件。

2. 发明授权

US06280522B1 Quartz glass crucible for pulling silicon single crystal and production process for such crucible 有权
标题翻译：用于拉硅单晶的石英玻璃坩埚和这种坩埚的生产工艺
公开(公告)号：US06280522B1
公开(公告)日：2001-08-28
申请号：US09508695
申请日：2000-03-29
申请人： Hiroyuki Watanabe , Hiroyuki Miyazawa , Tatsuhiro Sato , Satoshi Soeta , Tetsuya Igarashi
发明人： Hiroyuki Watanabe , Hiroyuki Miyazawa , Tatsuhiro Sato , Satoshi Soeta , Tetsuya Igarashi
IPC分类号： C30B1322
CPC分类号： C03B19/095 , C03B2201/23 , C03B2201/24 , C30B15/10 , C30B35/002 , Y10S65/08
摘要： There is provided a quartz glass crucible for pulling a silicon single crystal and a production process for the crucible, wherein an inner surface of the crucible is crystallized without addition of impurities during pulling a silicon single crystal, thereby impurities serving as causes of crystal defects being not incorporated into the silicon single crystal, so that deterioration of its inner surface is suppressed to improve a crystallization ratio, and accordingly productivity of the quartz glass crucible as well as a quality of the silicon single crystal is improved, and the quartz glass crucible for pulling a silicon single crystal comprises a crucible base body (3) made of a translucent quartz glass layer and a synthetic quartz glass layer (4) formed on an inner wall surface of the crucible base body (3), wherein a portion encircled by a brown ring on an inner surface of the quartz glass crucible is uniformly crystallized during pulling the silicon single crystal.
摘要翻译：提供了一种用于拉制硅单晶的石英玻璃坩埚和用于坩埚的制造方法，其中在拉取硅单晶时坩埚的内表面结晶而不添加杂质，从而导致晶体缺陷的原因是不掺入到硅单晶中，从而抑制其内表面的劣化以提高结晶化率，从而提高了石英玻璃坩埚的生产率以及硅单晶的质量，并且提高了石英玻璃坩埚拉硅单晶包括由半透明石英玻璃层制成的坩埚基体（3）和形成在坩埚基体（3）的内壁表面上的合成石英玻璃层（4），其中包围由石英玻璃坩埚的内表面上的棕色环在拉制硅单晶时均匀结晶。

3. 发明申请

US20100089309A1 METHOD FOR PULLING SILICON SINGLE CRYSTAL 有权
标题翻译：拉丝硅单晶的方法
公开(公告)号：US20100089309A1
公开(公告)日：2010-04-15
申请号：US12450961
申请日：2008-04-14
申请人： Satoshi Soeta , Masahiro Mori
发明人： Satoshi Soeta , Masahiro Mori
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/22
摘要： The invention is a method for pulling a silicon single crystal, which is a Czochralski method for growing the silicon single crystal by contacting a seed crystal with a melt and by pulling up, including the steps of: contacting the seed crystal with the melt; forming a necking portion under the seed crystal; and forming the silicon single crystal under the necking portion by increasing a diameter, wherein a pulling rate during forming the necking portion is 2 mm/min or less, and the silicon single crystal with the increased diameter is a boron-doped silicon single crystal having a resistivity of 1.5 mΩ·cm or less at a shoulder portion. Therefore, there can be provided a method of pulling a silicon single crystal without generating defects such as scratches at a wafer surface in the case of processing a boron-doped silicon single crystal ingot with a low resistivity produced by CZ method into a wafer.
摘要翻译：本发明是一种拉硅单晶的方法，该硅单晶是通过使晶种与熔体接触并通过拉起来生长硅单晶的切克劳斯基法，包括以下步骤：使晶种与熔体接触; 在晶种下形成颈缩部分; 并且通过增加直径在颈缩部分下形成硅单晶，其中在形成颈缩部分期间的拉伸速率为2mm / min以下，并且具有增加的直径的硅单晶是具有硼掺杂的硅单晶，其具有在肩部的电阻率为1.5m＆OHgr·cm或更小。因此，在通过CZ法制造的具有低电阻率的硼掺杂硅单晶锭加工成晶片的情况下，可以提供拉丝硅单晶的方法，而不会在晶片表面产生诸如划痕之类的缺陷。

4. 发明授权

US5972106A Device and method for producing single crystal 失效
标题翻译：单晶制造装置及方法
公开(公告)号：US5972106A
公开(公告)日：1999-10-26
申请号：US776776
申请日：1997-02-10
申请人： Tomohiko Ohta , Susumu Sonokawa , Satoshi Soeta , Yoshihiro Kodama
发明人： Tomohiko Ohta , Susumu Sonokawa , Satoshi Soeta , Yoshihiro Kodama
IPC分类号： C30B15/14 , C30B15/20 , C30B29/40
CPC分类号： C30B29/40 , C30B15/14 , C30B15/206 , C30B29/06 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A device and method for producing single crystals by the Czohralski method can control the temperature distribution and thermal history of single crystals to improve the production efficiency and quality of single crystals. The device includes a cylinder coaxially surrounding a single crystal pulling rod, having an upper end airtightly connected to the ceiling of a pulling chamber and a lower end close to the surface of a melt in a crucible. A heat insulating element is attached to the lower end of the cylinder, and is surrounded by a surface of the crystal, the inside wall of the crucible and the surface of the melt. The heat insulating element is sized to occupy 30-95% by volume of the space above the melt, and the space has a height corresponding to the radius of the crystal. The heat insulator has a sufficient heat insulating effect, so that even if the diameter of single crystals is increased, the pulling speed of the crystals does not need to be lowered, the uniformity of temperature of the entire crystal-melt interface is improved, and the ratio of single crystallization is not reduced.
摘要翻译： PCT No.PCT / JP95 / 02514 Sec。 371日期1997年2月10日 102（e）日期1997年2月10日PCT提交1995年12月8日PCT公布。公开号WO97 / 21853 日期：1997年6月19日Czohralski法制备单晶的装置和方法可以控制单晶的温度分布和热历史，提高单晶的生产效率和质量。该装置包括同轴地围绕单晶拉杆的圆筒，其具有气密地连接到拉动室的顶部的上端和靠近坩埚中的熔体表面的下端。绝热元件附着在圆筒的下端，被坩埚的表面，坩埚的内壁和熔体的表面所包围。绝热元件的尺寸设定为占据熔体上方空间的30-95％（体积），并且该空间的高度对应于晶体的半径。绝热体具有充分的隔热效果，即使单晶的直径增大，也不需要降低晶体的拉伸速度，提高整个晶体熔融界面的温度均匀性，单一结晶的比例不降低。

5. 发明申请

US20110056427A1 SINGLE-CRYSTAL MANUFACTURING APPARATUS AND SINGLE-CRYSTAL MANUFACTURING METHOD 有权
标题翻译：单晶制造装置和单晶制造方法
公开(公告)号：US20110056427A1
公开(公告)日：2011-03-10
申请号：US12991714
申请日：2009-05-18
申请人： Satoshi Soeta , Toshifumi Fujii
发明人： Satoshi Soeta , Toshifumi Fujii
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/10 , Y10T117/1012 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling chamber into which a grown single crystal is pulled and accommodated; a gas inlet provided in the pulling chamber; a gas flow-guide cylinder downwardly extending from a ceiling of the main chamber; and a heat-insulating ring upwardly extending from a lower end portion of the gas flow-guide cylinder with a diameter of the heat-insulating ring increased so as to surround an outside of the gas flow-guide cylinder, wherein at least one window is provided in a region between 50 and 200 mm from a lower end of the gas flow-guide cylinder, and an opening area of the window accounts for 50% or more of a surface area of the region between 50 and 200 mm from the lower end of the gas flow-guide cylinder.
摘要翻译：一种单晶体制造装置，至少包括：构造成容纳坩埚的主室; 连续地设置在主室上方的拉动室，其中拉出和容纳生长的单晶的拉动室; 设置在所述拉动室中的气体入口; 从主室的天花板向下延伸的气体导向缸; 并且从所述气体导流筒的下端部向上延伸的绝热环，所述绝热环的直径增大，以便包围所述气体导流筒的外部，其中，至少一个窗口为设置在距气体导向筒的下端50〜200mm的范围内，窗口的开口面积为距下端50〜200mm区域的面积的50％以上的气体导向筒。

6. 发明申请

US20050205004A1 Graphite heater for producing single crystal, single crystal productin system and single crystal productin method 有权
标题翻译：石墨加热器，用于生产单晶，单晶产品系统和单晶产品方法
公开(公告)号：US20050205004A1
公开(公告)日：2005-09-22
申请号：US10516347
申请日：2003-12-08
申请人： Masahiro Sakurada , Izumi Fusegawa , Satoshi Soeta , Makoto Iida
发明人： Masahiro Sakurada , Izumi Fusegawa , Satoshi Soeta , Makoto Iida
IPC分类号： C30B15/14 , C30B35/00 , C30B1/00
CPC分类号： C30B15/14 , Y10T117/10
摘要： The present invention discloses a graphite heater for producing a single crystal used when producing a single crystal by the Czochralski method which comprises at least a terminal part to which electric current is supplied and a cylindrical heat generating part by resistance heating and are provided so as to surround a crucible for containing a raw material melt wherein the heat generating part has heat generating slit parts formed by being provided with upper slits extending downward from the upper end and lower slits extending upwards from the lower end by turns, and a length of at least one slit of the upper slits differs from others and/or a length of at least one slit of the lower slits differs from others so that a heat generating distribution of the heat generating part may be changed. Thereby, there can be provided a graphite heater for producing a single crystal which makes it possible to produce a silicon single crystal with high productivity when the silicon single crystal is pulled in a predetermined defect-free region or a predetermined defect region.
摘要翻译：本发明公开了一种石墨加热器，用于生产通过切克劳斯基法生产单晶时使用的单晶，该方法至少包括供给电流的端子部分和电阻加热的圆柱形发热部分，围绕用于容纳原料熔体的坩埚，其中发热部具有通过从上端向下延伸的上部狭缝形成的发热狭缝部和由下端向上延伸的下部狭缝，并且至少具有长度上缝隙的一个狭缝与其他狭缝不同，和/或下狭缝的至少一个狭缝的长度不同，从而可以改变发热部分的发热分布。因此，可以提供一种用于制造单晶的石墨加热器，当在预定的无缺陷区域或预定缺陷区域中拉伸硅单晶时，可以以高生产率制造单晶硅。

7. 发明授权

US07258744B2 Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal 有权
标题翻译：用于制造单晶的石墨加热器，单晶的制造装置以及单晶的制造方法
公开(公告)号：US07258744B2
公开(公告)日：2007-08-21
申请号：US10516347
申请日：2003-12-08
申请人： Masahiro Sakurada , Izumi Fusegawa , Satoshi Soeta , Makoto Iida
发明人： Masahiro Sakurada , Izumi Fusegawa , Satoshi Soeta , Makoto Iida
IPC分类号： C30B35/00 , C30B15/20
CPC分类号： C30B15/14 , Y10T117/10
摘要： The present invention discloses a graphite heater for producing a single crystal used when producing a single crystal by the Czochralski method which comprises at least a terminal part to which electric current is supplied and a cylindrical heat generating part by resistance heating and are provided so as to surround a crucible for containing a raw material melt wherein the heat generating part has heat generating slit parts formed by being provided with upper slits extending downward from the upper end and lower slits extending upwards from the lower end by turns, and a length of at least one slit of the upper slits differs from others and/or a length of at least one slit of the lower slits differs from others so that a heat generating distribution of the heat generating part may be changed. Thereby, there can be provided a graphite heater for producing a single crystal which makes it possible to produce a silicon single crystal with high productivity when the silicon single crystal is pulled in a predetermined defect-free region or a predetermined defect region.
摘要翻译：本发明公开了一种石墨加热器，用于生产通过切克劳斯基法生产单晶时使用的单晶，该方法至少包括供给电流的端子部分和电阻加热的圆柱形发热部分，围绕用于容纳原料熔体的坩埚，其中发热部具有通过从上端向下延伸的上部狭缝形成的发热狭缝部和由下端向上延伸的下部狭缝，并且至少具有长度上缝隙的一个狭缝与其他狭缝不同，和/或下狭缝的至少一个狭缝的长度不同，从而可以改变发热部分的发热分布。因此，可以提供一种用于制造单晶的石墨加热器，当在预定的无缺陷区域或预定缺陷区域中拉伸硅单晶时，可以以高生产率制造单晶硅。

8. 发明授权

US08652254B2 Method for pulling silicon single crystal 有权
标题翻译：拉硅单晶的方法
公开(公告)号：US08652254B2
公开(公告)日：2014-02-18
申请号：US12450961
申请日：2008-04-14
申请人： Satoshi Soeta , Masahiro Mori
发明人： Satoshi Soeta , Masahiro Mori
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/22
摘要： The invention is a method for pulling a silicon single crystal, which is a Czochralski method for growing the silicon single crystal by contacting a seed crystal with a melt and by pulling up, including the steps of: contacting the seed crystal with the melt; forming a necking portion under the seed crystal; and forming the silicon single crystal under the necking portion by increasing a diameter, wherein a pulling rate during forming the necking portion is 2 mm/min or less, and the silicon single crystal with the increased diameter is a boron-doped silicon single crystal having a resistivity of 1.5 mΩ·cm or less at a shoulder portion. Therefore, there can be provided a method of pulling a silicon single crystal without generating defects such as scratches at a wafer surface in the case of processing a boron-doped silicon single crystal ingot with a low resistivity produced by CZ method into a wafer.
摘要翻译：本发明是一种拉硅单晶的方法，该硅单晶是通过使晶种与熔体接触并通过拉起来生长硅单晶的切克劳斯基法，包括以下步骤：使晶种与熔体接触; 在晶种下形成颈缩部分; 并且通过增加直径在颈缩部分下形成硅单晶，其中在形成颈缩部分期间的拉伸速率为2mm / min以下，并且具有增加的直径的硅单晶是具有硼掺杂的硅单晶，其具有肩部的电阻率为1.5mΩ·cm以下。因此，在通过CZ法制造的具有低电阻率的硼掺杂硅单晶锭加工成晶片的情况下，可以提供拉丝硅单晶的方法，而不会在晶片表面产生诸如划痕之类的缺陷。

9. 发明授权

US08236104B2 Single-crystal manufacturing apparatus and single-crystal manufacturing method 有权
标题翻译：单晶制造装置和单晶制造方法
公开(公告)号：US08236104B2
公开(公告)日：2012-08-07
申请号：US12991714
申请日：2009-05-08
申请人： Satoshi Soeta , Toshifumi Fujii
发明人： Satoshi Soeta , Toshifumi Fujii
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/10 , Y10T117/1012 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling chamber into which a grown single crystal is pulled and accommodated; a gas inlet provided in the pulling chamber; a gas flow-guide cylinder downwardly extending from a ceiling of the main chamber; and a heat-insulating ring upwardly extending from a lower end portion of the gas flow-guide cylinder with a diameter of the heat-insulating ring increased so as to surround an outside of the gas flow-guide cylinder, wherein at least one window is provided in a region between 50 and 200 mm from a lower end of the gas flow-guide cylinder, and an opening area of the window accounts for 50% or more of a surface area of the region between 50 and 200 mm from the lower end of the gas flow-guide cylinder.
摘要翻译：一种单晶体制造装置，至少包括：构造成容纳坩埚的主室; 连续地设置在主室上方的拉动室，其中拉出和容纳生长的单晶的拉动室; 设置在所述拉动室中的气体入口; 从主室的天花板向下延伸的气体导向缸; 并且从所述气体导流筒的下端部向上延伸的绝热环，所述绝热环的直径增大，以便包围所述气体导流筒的外部，其中，至少一个窗口为设置在距气体导向筒的下端50〜200mm的范围内，窗口的开口面积为距下端50〜200mm区域的面积的50％以上的气体导向筒。

10. 发明授权

US5851287A Seed crystal holder 失效
标题翻译：种子晶体座
公开(公告)号：US5851287A
公开(公告)日：1998-12-22
申请号：US804146
申请日：1997-02-20
申请人： Satoshi Soeta
发明人： Satoshi Soeta
IPC分类号： C30B15/32 , C30B35/00
CPC分类号： C30B15/32 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1072
摘要： A seed crystal holder is used to grow a single crystal in an intended direction. In order to grow a single crystal in an intended direction by a crystal pulling method, a seed crystal is accurately cut out along a crystal orientation, and this seed crystal is accurately held in a predetermined attitude by the seed crystal holder. A seed crystal insertion bore having a rectangular cross-section is formed in the body of the seed crystal holder. A seed crystal having a taper surface at one edge is inserted into the seed crystal insertion bore. The inserted seed crystal is pressed at its taper surface by a taper surface of a block, so that two surfaces of the seed crystal are fixedly pressed against two inner surfaces of the seed crystal insertion bore. The other end of the block is covered with a block-retaining ring, so that the block does not come off the seed crystal holder.
摘要翻译：种子晶体保持器用于在预期方向上生长单晶。为了通过晶体拉伸法在预期的方向上生长单晶，可以将晶种沿着晶体取向精确地切出，并且通过籽晶保持器将晶种准确地保持在预定的姿态。具有矩形横截面的晶种插入孔形成在晶种保持器的主体中。在一个边缘具有锥形表面的籽晶插入晶种插入孔中。插入的晶种在其锥形表面被块的锥形表面压制，使得晶种的两个表面被固定地压在晶种插入孔的两个内表面上。块的另一端覆盖有块保持环，使得块不会从晶种座脱落。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式