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1. 发明授权

US08436395B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08436395B2
公开(公告)日：2013-05-07
申请号：US13405961
申请日：2012-02-27
申请人： Takahiro Sato , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
发明人： Takahiro Sato , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/36
CPC分类号： H01L33/24 , H01L33/382 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。透明电极具有设置在n侧和p侧电极之间的孔。沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

2. 发明授权

US08395169B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08395169B2
公开(公告)日：2013-03-12
申请号：US12874839
申请日：2010-09-02
申请人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
发明人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/504 , H01L24/29 , H01L33/507 , H01L33/508 , H01L2224/14 , H01L2224/48091 , H01L2224/49107 , H01L2224/73257 , H01L2224/73265 , H01L2224/92247 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.
摘要翻译：根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。半导体发光元件发射第一光。半导体发光元件被放置在安装构件上。第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。第一透明层对于第一光和第二光是透明的。

3. 发明申请

US20130069098A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20130069098A1
公开(公告)日：2013-03-21
申请号：US13677828
申请日：2012-11-15
申请人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
发明人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
IPC分类号： H01L33/50
CPC分类号： H01L33/50 , H01L24/29 , H01L24/32 , H01L33/44 , H01L33/504 , H01L33/58 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.
摘要翻译：根据一个实施例，发光器件包括发射第一光的半导体发光元件，安装构件，第一和第二波长转换层以及透明层。第一波长转换层设置在与安装构件接触的元件和安装构件之间。第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。半导体发光元件设置在第二波长转换层和第一波长转换层之间。第二波长转换层吸收第一光并发射波长比第一光的波长长的第三光。透明层设置在元件和第二波长转换层之间。透明层对于第一，第二和第三光是透明的。

4. 发明授权

US08368104B2 Light emitting device 有权
公开(公告)号：US08368104B2
公开(公告)日：2013-02-05
申请号：US12874413
申请日：2010-09-02
申请人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
发明人： Toshiki Hikosaka , Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L24/29 , H01L24/32 , H01L33/44 , H01L33/504 , H01L33/58 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

5. 发明申请

US20120056526A1 LIGHT EMITTING DEVICE 有权
公开(公告)号：US20120056526A1
公开(公告)日：2012-03-08
申请号：US13034120
申请日：2011-02-24
申请人： Iwao MITSUISHI , Shinya Nunoue , Takahiro Sato , Yumi Fukuda , Aoi Okada , Naotoshi Matsuda , Toshiki Hikosaka
发明人： Iwao MITSUISHI , Shinya Nunoue , Takahiro Sato , Yumi Fukuda , Aoi Okada , Naotoshi Matsuda , Toshiki Hikosaka
IPC分类号： H01J1/62
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , H01L33/504 , H01L33/505 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

6. 发明授权

US08071995B2 Light emitting device and a method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08071995B2
公开(公告)日：2011-12-06
申请号：US12719484
申请日：2010-03-08
申请人： Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
发明人： Takahiro Sato , Iwao Mitsuishi , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/504 , H01L33/507 , H01L33/508 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting device, includes: a light source to emit source light; a first wavelength conversion portion to absorb the source light and to emit first light having a wavelength different from a wavelength of the source light; a light transmitting portion provided at an opposite side of the first wavelength conversion portion from the light source and configured to transmit the source light and the first light; and a second wavelength conversion portion provided at an opposite side of the light transmitting portion from the first wavelength conversion portion and configured to absorb at least one of the source light and the first light to emit second light having a wavelength different from the wavelength of the source light and also different from a wavelength of the first light. Part of the source light is configured to be taken to an outside of the light emitting device without passing through at least one of the first wavelength conversion portion and the second wavelength conversion portion.
摘要翻译：一种发光器件，包括：发光源的光源; 第一波长转换部分，用于吸收源光并发射具有不同于源光波长的波长的第一光; 光传输部分，设置在与光源相反的第一波长转换部分的相对侧并且被配置为透射源光和第一光; 以及第二波长转换部，其设置在所述透光部的与所述第一波长转换部的相反侧，并且被配置为吸收所述源光和所述第一光中的至少一个，以发射具有与所述第二波长的波长不同的波长的第二光源光并且也不同于第一光的波长。源光的一部分被配置为被带到发光器件的外部，而不通过第一波长转换部分和第二波长转换部分中的至少一个。

7. 发明申请

US20110220933A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置及制造半导体发光装置的方法
公开(公告)号：US20110220933A1
公开(公告)日：2011-09-15
申请号：US12874399
申请日：2010-09-02
申请人： Toru GOTODA , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
发明人： Toru GOTODA , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
IPC分类号： H01L33/22 , H01L33/00
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/20 , H01L2933/0091
摘要： A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.
摘要翻译：半导体发光器件具有发光元件，以及第一和第二电极。发光元件在基板上具有基于氮化物的III-V族化合物半导体。第一和第二电极分别设置在发光元件的两侧。发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。第一导电型半导体层设置在发光层和第一电极之间。第二导电型半导体层设置在发光层和第二电极之间。第一导电类型半导体层的一个表面接触第一电极，并且是大致加工以具有两种或更多种倾斜角的光提取表面。

8. 发明授权

US08921870B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08921870B2
公开(公告)日：2014-12-30
申请号：US13037740
申请日：2011-03-01
申请人： Takahiro Sato , Shinya Nunoue
发明人： Takahiro Sato , Shinya Nunoue
IPC分类号： H01L29/18 , H01L25/075 , H01L33/60
CPC分类号： H01L25/0753 , H01L33/60 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265
摘要： According to one embodiment, a light emitting device includes a base substrate, first and second substrates, first and second semiconductor light emitting elements. The first and second substrates are provided on a major surface of the base substrate and include first and second reflection regions, respectively. The first and second semiconductor light emitting elements include first and second structural bodies including first and second light emitting layers, respectively. Each of the first and second semiconductor light emitting elements is inputted with a power not less than 1 Watt. An area of a face of the first semiconductor light emitting element is S1, and a gap between the first light emitting layer and the first substrate is t1. An area R1 of the first reflection region satisfies a relationship (S1+100t12)≦R1≦(S1+10000t12). A gap L between the first and the second semiconductor light emitting elements satisfies the relationships 100t1≦L≦10000t1.
摘要翻译：根据一个实施例，发光器件包括基底衬底，第一和第二衬底，第一和第二半导体发光元件。第一和第二基板设置在基底基板的主表面上，分别包括第一和第二反射区域。第一和第二半导体发光元件分别包括包括第一和第二发光层的第一和第二结构体。第一和第二半导体发光元件中的每一个都输入不小于1瓦特的功率。第一半导体发光元件的面的面积为S1，第一发光层与第一基板的间隔为t1。第一反射区域的区域R1满足关系（S1 + 100t12）＆nlE; R1＆nlE;（S1 + 10000t12）。第一和第二半导体发光元件之间的间隙L满足关系式100t1＆nlE; L＆nlE; 10000t1。

9. 发明授权

US08653498B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08653498B2
公开(公告)日：2014-02-18
申请号：US13032943
申请日：2011-02-23
申请人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/40 , H01L33/04
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。第一电极包括第一接触电极部分。第二电极包括第二接触电极部分和p侧焊盘电极。第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

10. 发明授权

US08207659B2 Light emitting device and light emitting apparatus 有权
标题翻译：发光装置和发光装置
公开(公告)号：US08207659B2
公开(公告)日：2012-06-26
申请号：US12548772
申请日：2009-08-27
申请人： Takahiro Sato , Shinya Nunoue
发明人： Takahiro Sato , Shinya Nunoue
IPC分类号： H01J1/62 , H01J63/04 , H01L33/00
CPC分类号： C09K11/08 , C09K11/02 , C09K11/06 , C09K2211/1007 , C09K2211/182 , H01L33/504 , H01L2224/48091 , H01L2224/48465 , H01L2924/01019 , H01L2924/01066 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device, includes: a light source; a first wavelength conversion unit absorbing a light-source light radiated by the light source and radiating a first light, a wavelength of the first light being different from a wavelength of the light-source light; and a second wavelength conversion unit dispersedly provided in the first wavelength conversion unit, the second wavelength conversion unit absorbing the light-source light and radiating a second light. An absorptance of the light-source light in the second wavelength conversion unit is higher than an absorptance of the light-source light in the first wavelength conversion unit. A wavelength of the second light is different from the wavelength of the light-source light and different from the wavelength of the first light.
摘要翻译：一种发光器件，包括：光源; 第一波长转换单元，其吸收由所述光源照射的光源光并照射第一光，所述第一光的波长与所述光源光的波长不同; 以及分散地设置在所述第一波长转换单元中的第二波长转换单元，所述第二波长转换单元吸收所述光源光并照射第二光。第二波长转换单元中的光源光的吸收率高于第一波长转换单元中的光源光的吸收率。第二光的波长与光源光的波长不同，与第一光的波长不同。

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