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1. 发明申请

US20120286237A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 审中-公开
标题翻译：半导体发光器件和散热器
公开(公告)号：US20120286237A1
公开(公告)日：2012-11-15
申请号：US13222185
申请日：2011-08-31
申请人： Hajime Nago , Koichi Tachibana , Shigeya Kimura , Takahiro Sato , Taisuke Sato , Toshihide Ito , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Shigeya Kimura , Takahiro Sato , Taisuke Sato , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/325 , H01S5/34333 , H01S2304/04
摘要： According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including Inx1Ga1-x1N (0
摘要翻译：根据一个实施例，半导体发光器件包括：n型半导体层，p型半导体层和发光部分。发光部分设置在n型半导体层和p型半导体层之间。发光部分包括：包括In x Ga 1-x1 N（0

2. 发明授权

US08436395B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08436395B2
公开(公告)日：2013-05-07
申请号：US13405961
申请日：2012-02-27
申请人： Takahiro Sato , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
发明人： Takahiro Sato , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/36
CPC分类号： H01L33/24 , H01L33/382 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。透明电极具有设置在n侧和p侧电极之间的孔。沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

3. 发明申请

US20130001584A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20130001584A1
公开(公告)日：2013-01-03
申请号：US13405961
申请日：2012-02-27
申请人： Takahiro SATO , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
发明人： Takahiro SATO , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/24 , H01L33/382 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。透明电极具有设置在n侧和p侧电极之间的孔。沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

4. 发明授权

US08653498B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08653498B2
公开(公告)日：2014-02-18
申请号：US13032943
申请日：2011-02-23
申请人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/40 , H01L33/04
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。第一电极包括第一接触电极部分。第二电极包括第二接触电极部分和p侧焊盘电极。第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

5. 发明申请

US20120032139A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20120032139A1
公开(公告)日：2012-02-09
申请号：US13032943
申请日：2011-02-23
申请人： Shigeya KIMURA , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya KIMURA , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/40 , H01L33/04
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。第一电极包括第一接触电极部分。第二电极包括第二接触电极部分和p侧焊盘电极。第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

6. 发明授权

US08461615B2 Semiconductor light emitting device 失效
公开(公告)号：US08461615B2
公开(公告)日：2013-06-11
申请号：US12875632
申请日：2010-09-03
申请人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/36 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.

7. 发明申请

US20110215363A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110215363A1
公开(公告)日：2011-09-08
申请号：US12875632
申请日：2010-09-03
申请人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/36
CPC分类号： H01L33/36 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.
摘要翻译：根据一个实施例，半导体发光器件包括层叠结构体，第一电极和第二电极。层叠结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和发光部分。层叠结构体在第二半导体层的一侧具有第一主表面。第一电极设置在第一半导体上。第二电极设置在第二半导体层上。第一电极包括第一焊盘部分和从第一焊盘部分沿着第一延伸方向延伸的第一延伸部分。第一延伸部分包括第一宽度增加部分。第一宽度增加部分沿着与第一延伸方向正交的方向的宽度从第一焊盘部分朝向第一延伸部分的端部增加。

8. 发明申请

US20110215291A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110215291A1
公开(公告)日：2011-09-08
申请号：US12873586
申请日：2010-09-01
申请人： Toshihide Ito , Koichi Tachibana , Shinya Nunoue
发明人： Toshihide Ito , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L31/0256 , H01L31/0352
CPC分类号： H01L31/022466 , B82Y20/00 , H01L31/035236 , H01L33/42
摘要： According to one embodiment, a semiconductor light-emitting device using an ITON layer for a transparent conductor and realizing low drive voltage, high luminance efficiency, and uniformed light emission intensity distribution is provided. The semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and whose uppermost part is a p-type GaN layer; an ITON (Indium Tin Oxynitride) layer formed on the p-type GaN layer; an ITO (Indium Tin Oxide) layer formed on the ITON layer; a first metal electrode formed on a part on the ITO layer; and a second metal electrode formed in contact with the n-type semiconductor layer.
摘要翻译：根据一个实施例，提供了一种使用用于透明导体的ITON层并实现低驱动电压，高亮度效率和均匀的发光强度分布的半导体发光器件。半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层上的有源层; 在有源层上形成的p型半导体层，其最上部是p型GaN层; 形成在p型GaN层上的ITON（铟锡氧氮化物）层; 形成在ITON层上的ITO（氧化铟锡）层; 形成在所述ITO层的一部分上的第一金属电极; 以及形成为与n型半导体层接触的第二金属电极。

9. 发明授权

US09412910B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09412910B2
公开(公告)日：2016-08-09
申请号：US13030453
申请日：2011-02-18
申请人： Toshihide Ito , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Toshihide Ito , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/42 , H01L33/44
CPC分类号： H01L33/44 , H01L33/42 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光部分，第一透明导电层和第二透明导电层。发光部分设置在第一和第二半导体层之间。第二半导体层设置在第一透明导电层和发光部之间。第一透明导电层包括氧。第二透明导电层设置在第二半导体层和第一透明导电层之间。第二透明导电层的折射率高于第一透明导电层的折射率，并且包括浓度高于第一透明导电层中包含的氧浓度的氧。

10. 发明授权

US08766297B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08766297B2
公开(公告)日：2014-07-01
申请号：US13030264
申请日：2011-02-18
申请人： Toshihide Ito , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
发明人： Toshihide Ito , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/36 , H01L33/42
CPC分类号： H01L33/145 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer is disposed between the first electrode and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the first semiconductor layer. The second electrode has reflectivity with respect to luminescent light. The high resistance layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode and includes a portion overlapping with the first electrode. The transparent conductive layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode. The transparent conductive layer has a resistance lower than a resistance of the high resistance layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极，高电阻层和透明导电层。堆叠结构体包括第一和第二半导体层和发光层。第一半导体层设置在第一电极和第二半导体层之间。第二半导体层设置在第二电极和第一半导体层之间。第二电极具有相对于发光的反射率。高电阻层与第二半导体层与第二电极之间的第二半导体层接触并且包括与第一电极重叠的部分。透明导电层与第二半导体层在第二半导体层和第二电极之间接触。透明导电层的电阻低于高电阻层的电阻。

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