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1. 发明申请

US20120286237A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 审中-公开
标题翻译：半导体发光器件和散热器
公开(公告)号：US20120286237A1
公开(公告)日：2012-11-15
申请号：US13222185
申请日：2011-08-31
申请人： Hajime Nago , Koichi Tachibana , Shigeya Kimura , Takahiro Sato , Taisuke Sato , Toshihide Ito , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Shigeya Kimura , Takahiro Sato , Taisuke Sato , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/325 , H01S5/34333 , H01S2304/04
摘要： According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including Inx1Ga1-x1N (0
摘要翻译：根据一个实施例，半导体发光器件包括：n型半导体层，p型半导体层和发光部分。发光部分设置在n型半导体层和p型半导体层之间。发光部分包括：包括In x Ga 1-x1 N（0

2. 发明授权

US08436395B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08436395B2
公开(公告)日：2013-05-07
申请号：US13405961
申请日：2012-02-27
申请人： Takahiro Sato , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
发明人： Takahiro Sato , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/36
CPC分类号： H01L33/24 , H01L33/382 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。透明电极具有设置在n侧和p侧电极之间的孔。沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

3. 发明申请

US20130001584A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20130001584A1
公开(公告)日：2013-01-03
申请号：US13405961
申请日：2012-02-27
申请人： Takahiro SATO , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
发明人： Takahiro SATO , Shigeya Kimura , Taisuke Sato , Toshihide Ito , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/24 , H01L33/382 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。透明电极具有设置在n侧和p侧电极之间的孔。沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

4. 发明授权

US08653498B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08653498B2
公开(公告)日：2014-02-18
申请号：US13032943
申请日：2011-02-23
申请人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya Kimura , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/40 , H01L33/04
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。第一电极包括第一接触电极部分。第二电极包括第二接触电极部分和p侧焊盘电极。第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

5. 发明申请

US20120032139A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20120032139A1
公开(公告)日：2012-02-09
申请号：US13032943
申请日：2011-02-23
申请人： Shigeya KIMURA , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Shigeya KIMURA , Taisuke Sato , Toshihide Ito , Takahiro Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/40 , H01L33/04
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。第一电极包括第一接触电极部分。第二电极包括第二接触电极部分和p侧焊盘电极。第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

6. 发明授权

US08441023B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08441023B2
公开(公告)日：2013-05-14
申请号：US13226045
申请日：2011-09-06
申请人： Taisuke Sato , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
发明人： Taisuke Sato , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/46
摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.
摘要翻译：根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。在第一电介质层，第二电介质层和衬底上形成第一半导体层。第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

7. 发明授权

US08643044B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08643044B2
公开(公告)日：2014-02-04
申请号：US13222912
申请日：2011-08-31
申请人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。第一半导体层具有第一和第二部分。发光层设置在第二部分上。第二半导体层设置在发光层上。第一电极设置在第一部分上。第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。焊盘层连接到第二电极。焊盘层的透射率低于第二电极的透射率。第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

8. 发明申请

US20120217524A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS 失效
标题翻译：半导体发光装置和发光装置
公开(公告)号：US20120217524A1
公开(公告)日：2012-08-30
申请号：US13206649
申请日：2011-08-10
申请人： Taisuke Sato , Shigeya Kimura , Kotaro Zaima , Koichi Tachibana , Shinya Nunoue
发明人： Taisuke Sato , Shigeya Kimura , Kotaro Zaima , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/50 , H01L33/40
CPC分类号： H01L33/02 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/50 , H01L2224/73265 , H01L2924/181 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

9. 发明授权

US08766311B2 Semiconductor light emitting device and light emitting apparatus 失效
标题翻译：半导体发光器件和发光装置
公开(公告)号：US08766311B2
公开(公告)日：2014-07-01
申请号：US13206649
申请日：2011-08-10
申请人： Taisuke Sato , Shigeya Kimura , Kotaro Zaima , Koichi Tachibana , Shinya Nunoue
发明人： Taisuke Sato , Shigeya Kimura , Kotaro Zaima , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/40
CPC分类号： H01L33/02 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/50 , H01L2224/73265 , H01L2924/181 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

10. 发明申请

US20120061713A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120061713A1
公开(公告)日：2012-03-15
申请号：US13222912
申请日：2011-08-31
申请人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/42
CPC分类号： H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。第一半导体层具有第一和第二部分。发光层设置在第二部分上。第二半导体层设置在发光层上。第一电极设置在第一部分上。第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。焊盘层连接到第二电极。焊盘层的透射率低于第二电极的透射率。第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

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