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1. 发明授权

US6008105A Method of planarizing an insulator film using multiple etching steps 失效
标题翻译：使用多个蚀刻步骤平坦化绝缘膜的方法
公开(公告)号：US6008105A
公开(公告)日：1999-12-28
申请号：US151288
申请日：1998-09-11
申请人： Takaaki Ukeda , Tatsuya Yamada , Yoshiaki Kato , Akio Miyajima
发明人： Takaaki Ukeda , Tatsuya Yamada , Yoshiaki Kato , Akio Miyajima
IPC分类号： G03F7/11 , G03F1/68 , G03F1/80 , G03F7/00 , G03F7/40 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/3105 , H01L21/3205 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L21/28
CPC分类号： H01L21/31055 , G03F1/70 , G03F7/0035
摘要： The semiconductor masking device of the invention includes a first semiconductor mask for forming an interconnection on a semiconductor substrate and a second semiconductor mask for forming a resist pattern on an insulating film. The first semiconductor mask has three masking areas and the second semiconductor mask has two masking areas. Masking area intervals, that is, the distances between the three masking areas of the first semiconductor mask and the two masking areas of the second semiconductor mask, are all equal to one another.
摘要翻译：本发明的半导体掩模装置包括用于在半导体衬底上形成互连的第一半导体掩模和用于在绝缘膜上形成抗蚀剂图案的第二半导体掩模。第一半导体掩模具有三个掩蔽区域，第二半导体掩模具有两个掩蔽区域。掩蔽区间隔，即第一半导体掩模的三个屏蔽区域与第二半导体掩模的两个屏蔽区域之间的距离都彼此相等。

2. 发明授权

US5858578A Photo masks for developing planar layers in a semiconductor device, and methods of forming the same 失效
标题翻译：用于在半导体器件中显影平面层的照相掩模及其形成方法
公开(公告)号：US5858578A
公开(公告)日：1999-01-12
申请号：US665622
申请日：1996-06-18
申请人： Takaaki Ukeda , Tatsuya Yamada , Yoshiaki Kato , Akio Miyajima
发明人： Takaaki Ukeda , Tatsuya Yamada , Yoshiaki Kato , Akio Miyajima
IPC分类号： G03F7/11 , G03F1/68 , G03F1/80 , G03F7/00 , G03F7/40 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/3105 , H01L21/3205 , H01L21/321 , H01L21/3213 , H01L21/768 , G03F9/00
CPC分类号： H01L21/31055 , G03F1/70 , G03F7/0035
摘要： The semiconductor masking device of the invention includes a first semiconductor mask for forming an interconnection on a semiconductor substrate and a second semiconductor mask for forming a resist pattern on an insulating film. The first semiconductor mask has three masking areas and the second semiconductor mask has two masking areas. Masking area intervals, that is, the distances between the three masking areas of the first semiconductor mask and the two masking areas of the second semiconductor mask, are all equal to one another.
摘要翻译：本发明的半导体掩模装置包括用于在半导体衬底上形成互连的第一半导体掩模和用于在绝缘膜上形成抗蚀剂图案的第二半导体掩模。第一半导体掩模具有三个掩蔽区域，第二半导体掩模具有两个掩蔽区域。掩蔽区间隔，即第一半导体掩模的三个屏蔽区域与第二半导体掩模的两个屏蔽区域之间的距离都彼此相等。

3. 发明授权

US06504269B1 Input device and electronic appliance using the same 失效
标题翻译：输入设备和使用该设备的电子设备
公开(公告)号：US06504269B1
公开(公告)日：2003-01-07
申请号：US09450306
申请日：1999-11-29
申请人： Akio Miyajima , Tamotsu Yamamoto , Tsutomu Sakuma , Akira Nakanishi , Toyoshi Fukumura
发明人： Akio Miyajima , Tamotsu Yamamoto , Tsutomu Sakuma , Akira Nakanishi , Toyoshi Fukumura
IPC分类号： H02B124
CPC分类号： H03K17/962 , H01H2209/082 , H03K2017/9602 , Y10T307/74 , Y10T307/766 , Y10T307/865
摘要： A touch type input device is used for various forms of control. A primary side line is connected to a power source, and a secondary side circuit ground through a power transformer are connected by an impedance element. Flat electrodes to be touched by a finger are formed on one side of an insulating base material, and are connected to a ground current detection circuit through a high resistor and a low pass filter. A control circuit for converting the output of the ground current detection circuit into a control signal for an electronic appliance, and a display unit are provided. Therefore, an input device having plural touch switches disposed on a base material in a free shape and layout can be obtained.
摘要翻译：触摸型输入装置用于各种形式的控制。初级侧线连接到电源，并且通过电力变压器接地的次级侧电路通过阻抗元件连接。通过手指触摸的平面电极形成在绝缘基材的一侧，并通过高电阻和低通滤波器连接到接地电流检测电路。提供一种用于将接地电流检测电路的输出转换为用于电子设备的控制信号的控制电路和显示单元。因此，可以获得具有设置在自由形状和布局的基材上的多个触摸开关的输入装置。

4. 发明授权

US5030582A Method of fabricating a CMOS semiconductor device 失效
标题翻译：制造CMOS半导体器件的方法
公开(公告)号：US5030582A
公开(公告)日：1991-07-09
申请号：US418039
申请日：1989-10-06
申请人： Akio Miyajima , Keiichi Kagawa , Akihira Shinohara , Kiyoyuki Morita , Takashi Uehara
发明人： Akio Miyajima , Keiichi Kagawa , Akihira Shinohara , Kiyoyuki Morita , Takashi Uehara
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/092
CPC分类号： H01L29/6659 , H01L21/823814 , H01L21/823828 , H01L27/0928
摘要： An ion implantation stopper is formed on a gate electrode extending on a substrate. When ions are implanted into the substrate to form an LDD layer or source and drain regions in the substrate, the stopper functions to prevent the gate electrode from being exposed to ion implantation. The prevention of the exposure of the gate electrode to the ion implantation ensures the prevention of channeling in the gate electrode.
摘要翻译：在基板上延伸的栅电极上形成离子注入阻挡层。当将离子注入到衬底中以在衬底中形成LDD层或源极和漏极区域时，阻挡层用于防止栅电极暴露于离子注入。防止栅电极暴露于离子注入确保防止栅电极中的沟道化。

5. 发明授权

US06518958B1 Electronic apparatus having plural entry switches 失效
标题翻译：具有多个入口开关的电子设备
公开(公告)号：US06518958B1
公开(公告)日：2003-02-11
申请号：US09654508
申请日：2000-09-01
申请人： Akio Miyajima , Tamotsu Yamamoto
发明人： Akio Miyajima , Tamotsu Yamamoto
IPC分类号： G09G500
CPC分类号： H04M1/23 , H04M1/0202 , H04M1/274525 , H04M2250/22
摘要： In an electronic apparatus having a membrane switch and a touch panel switch at its entirety section, the touch panel switch is elastic and is laid over the membrane switch. The two-layered structure provides users with two operations: a “finger-sliding” operation and a “finger-depressing operation.” When a user slides a finger on the surface of the touch panel switch, the sliding force activates the touch panel switch. The “finger-sliding” is used for selecting a desired item. On the other hand, when the user presses down on the surface of the touch panel switch, the depression force through the touch panel switch activates the underlying membrane switch. The “finger-depressing” is used for numeric or symbolic information entry. It is thus possible to realize an electronic apparatus offering an excellent compromise between ease of operation and a wide display section.
摘要翻译：在具有薄膜开关和触摸屏开关整个部分的电子设备中，触摸面板开关是弹性的并且被放置在薄膜开关上。双层结构为用户提供了两个操作：“手指滑动”操作和“手指按压操作”。当用户在触摸面板开关的表面上滑动手指时，滑动力激活触摸面板开关。 “手指滑动”用于选择所需项目。另一方面，当用户按下触摸面板开关的表面时，通过触摸面板开关的按压力激活下面的薄膜开关。 “finger-depressing”用于数字或符号信息输入。因此，可以实现在易于操作和宽显示部分之间提供极好的折中的电子设备。

6. 发明授权

US5539477A Video-signal transmitter-receiver and a signal transmission apparatus utilizing the same 失效
标题翻译：视频信号发射机 - 接收机和使用该接收机的信号发送装置
公开(公告)号：US5539477A
公开(公告)日：1996-07-23
申请号：US365199
申请日：1994-12-28
申请人： Akio Miyajima
发明人： Akio Miyajima
IPC分类号： H04N5/04 , H04B1/04 , H04B1/16 , H04N5/08 , H04N5/63 , H04N7/22
CPC分类号： H04N5/63 , H04N7/22
摘要： A signal transmitter and receiver (or a combination thereof) incorporated for example in audio and video apparatus such as a TV and a video-deck, comprises a synchronizing signal separator separating a synchronizing signal from video-signal, a monostable circuit of which period recovering its stable state, or unstable period, after an input of triggering signal, is longer than the period of synchronizing signal separated by the synchronizing signal separator, and a dc-power supply on-off controller controlling the on-off of dc-power supply according to the output of the monostable circuit. The dc-power supply on-off controller limits the supply of dc-power to a minimal number of circuits except during signal processing.
摘要翻译：包含在例如TV和视频甲板的音频和视频设备中的信号发射器和接收器（或它们的组合）包括一个从视频信号中分离同步信号的同步信号分离器，其中周期恢复的单稳态电路其稳定状态或不稳定周期在触发信号的输入之后比由同步信号分离器分离的同步信号的周期长;以及直流电源开关控制器，其控制直流电源的开关根据单稳态电路的输出。直流电源开关控制器将直流电源的供给限制在最小数量的电路，除了信号处理之外。

7. 发明授权

US06965352B2 Antenna device for vehicles and vehicle antenna system and communication system using the antenna device 失效
标题翻译：天线装置用于车辆和车载天线系统以及使用天线装置的通信系统
公开(公告)号：US06965352B2
公开(公告)日：2005-11-15
申请号：US10794091
申请日：2004-03-05
申请人： Masahiro Ohara , Akio Miyajima , Tsutomu Maeda , Takefumi Inoue
发明人： Masahiro Ohara , Akio Miyajima , Tsutomu Maeda , Takefumi Inoue
IPC分类号： B60R1/12 , B60R25/24 , H01Q1/32 , H01Q7/08
CPC分类号： H01Q7/08 , B60R25/24 , B60R2001/1261 , H01Q1/3241 , H01Q1/3266
摘要： An antenna device for installation on vehicles, which antenna device including a core made of a magnetic material, a holding portion provided by a dielectric film sheet wound around the core, a coil formed with a linear conductor wound around the holding portion, a case made of a dielectric resin material for housing the core, the holding portion and the coil, and a flexible dielectric resin filling the space within the case excluding the core, the holding portion and the coil.
摘要翻译：一种用于安装在车辆上的天线装置，所述天线装置包括由磁性材料制成的芯，由围绕芯部缠绕的电介质薄膜片提供的保持部分，形成有缠绕在保持部分上的线状导体的线圈，用于容纳芯部，保持部分和线圈的介电树脂材料和填充除了芯体，保持部分和线圈之外的壳体内的空间的柔性介电树脂。

8. 发明授权

US5273914A Method of fabricating a CMOS semiconductor devices 失效
标题翻译：制造CMOS半导体器件的方法
公开(公告)号：US5273914A
公开(公告)日：1993-12-28
申请号：US900743
申请日：1992-06-19
申请人： Akio Miyajima , Keiichi Kagawa , Akihira Shinohara , Kiyoyuki Morita , Takashi Uehara
发明人： Akio Miyajima , Keiichi Kagawa , Akihira Shinohara , Kiyoyuki Morita , Takashi Uehara
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/092 , H01L21/266
CPC分类号： H01L29/6659 , H01L21/823814 , H01L21/823828 , H01L27/0928 , Y10S148/015
摘要： An ion implantation stopper is formed on a gate electrode extending on a substrate. When ions are implanted into the substrate to form an LDD layer or source and drain regions in the substrate, the stopper functions to prevent the gate electrode from being exposed to ion implantation. The prevention of the exposure of the gate electrode to the ion implantation ensures the prevention of channeling in the gate electrode. The invention includes forming a first protective film on the gate of an NMOS, implanting to form LDD region for the NMOS, implanting to form source and drain regions of a PMOS, forming a second protective film on the gate of the NMOS, implanting to form source and drain regions of the NMOS, the first and second protective films prevent the gate electrode of the NMOS from being exposed to ion implantation during the respective implanting steps so that channeling is prevented from occurring in the gate electrode of the NMOS.
摘要翻译：在基板上延伸的栅电极上形成离子注入阻挡层。当将离子注入到衬底中以在衬底中形成LDD层或源极和漏极区域时，阻挡层用于防止栅电极暴露于离子注入。防止栅电极暴露于离子注入确保防止栅电极中的沟道化。本发明包括在NMOS的栅极上形成第一保护膜，注入以形成用于NMOS的LDD区，注入以形成PMOS的源极和漏极区，在NMOS的栅极上形成第二保护膜，以形成源极和漏极区域中，第一和第二保护膜防止NMOS的栅电极在相应的注入步骤期间暴露于离子注入，从而防止在NMOS的栅电极中发生沟道化。

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