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1. 发明申请

US20050022906A1 Bainite type non-refined steel for nitriding, method for production thereof and nitrided product 审中-公开
标题翻译：用于氮化的贝氏体型非精炼钢，其制造方法和氮化产品
公开(公告)号：US20050022906A1
公开(公告)日：2005-02-03
申请号：US10499657
申请日：2003-01-24
申请人： Takaaki Harasaki , Takuya Nogami , Noriyuki Yamada , Katsuaki Shiiki , Shinya Takahashi , Takashi Kano , Yutaka Kurebayashi
发明人： Takaaki Harasaki , Takuya Nogami , Noriyuki Yamada , Katsuaki Shiiki , Shinya Takahashi , Takashi Kano , Yutaka Kurebayashi
IPC分类号： C22C38/00 , C22C38/04 , C22C38/22 , C22C38/24 , C22C38/42 , C22C38/44 , C22C38/46 , C22C38/60 , C23C8/26 , C22C38/18
CPC分类号： C23C8/26 , C21D2211/002 , C22C38/002 , C22C38/04 , C22C38/22 , C22C38/24 , C22C38/42 , C22C38/44 , C22C38/46 , C22C38/60 , Y02P10/212
摘要： An object of the present invention is to provide an untempered free-machining steel to be nitrided, not containing Pb, capable of securing a predetermined strength and hardness and having machinability higher than steel containing Pb; and nitrided products. To be more specific, the present invention relates to a bainite-type untempered free-machining steel to be nitrided containing C: 0.05 to 0.8 wt %, Si: 0.01 to 2.5 wt %, Mn: 0.1 to 3.5 wt %, P: 0.001 to 0.2 wt %, S: 0.01 to 0.2 wt %, Cr: 1.0 to 3.5 wt %, V: 0.1 to 0.5 wt %, Al: 0.001 to 0.020 wt %, Ca: 0.0005 to 0.02 wt %, and O: 0.0005 to 0.01 wt % and the residue with an alloy composition of unavoidable impurities and Fe as its basic alloy composition, provided that a content of each of the Mn, the S and the Cr satisfy the formula: ([Mn]−55×[S]/32+[Cr])>2.0, in which an occupation area of a sulfide inclusion present in contact with an oxide inclusion containing 8 to 62 wt % of CaO and containing not less than 1.0 wt % of Ca is not less than 2.0×10−4 mm2 per visual field area of 3.5 mm2. The present invention also relates to a method of manufacturing the above bainite-type untempered free-machining steel to be nitrided and nitrided products manufactured by the said manufacturing method.
摘要翻译：本发明的目的是提供一种能够确保预定强度和硬度并且具有高于含Pb的钢的切削加工性的未包含Pb的未经回收的自由加工钢; 和氮化产品。更具体地说，本发明涉及含有C：0.05〜0.8重量％，Si：0.01〜2.5重量％，Mn：0.1〜3.5重量％，P：0.001的氮化的贝氏体型未回火自由加工钢至0.2重量％，S：0.01〜0.2重量％，Cr：1.0〜3.5重量％，V：0.1〜0.5重量％，Al：0.001〜0.020重量％，Ca：0.0005〜0.02重量％，O：0.0005〜 0.01重量％，残留物中不可避免的杂质和Fe作为其基本合金组成的合金组成，其中Mn，S和Cr各自的含量满足下式：（[Mn] -55x [S] / 32+ [Cr]）> 2.0，其中与含有8至62重量％的CaO并且含有不少于1.0重量％的Ca的氧化物夹杂物存在的硫化物夹杂物的占有面积不小于2.0×10 6， -4> mm 2，视场面积为3.5mm 2。本发明还涉及一种制造上述贝氏体型未回火自由加工钢的方法，该钢是由所述制造方法制造的氮化和氮化产品。

2. 发明授权

US06783728B2 Free-cutting steel for machine structural use having good machinability in cutting by cemented carbide tool 有权
标题翻译：用于机械结构用途的自由切削钢，通过硬质合金工具切削加工性能良好
公开(公告)号：US06783728B2
公开(公告)日：2004-08-31
申请号：US10163571
申请日：2002-06-07
申请人： Takashi Kano , Yutaka Kurebayashi
发明人： Takashi Kano , Yutaka Kurebayashi
IPC分类号： C22C3860
CPC分类号： C22C38/002 , C22C38/02 , C22C38/04 , C22C38/22 , C22C38/60
摘要： Disclosed is a free-cutting steel for machine structural use which always exhibits desired machinability, particularly, machinability by cutting with cemented carbide tools. This free-cutting steel is produced by preparing a molten alloy of the composition consisting essentially of, by weight %, C: 0.05-0.8%, Si: 0.01-2.5%, Mn: 0.1-3.5% and O: 0.0005-0.01%, the balance being Fe and inevitable, and adjusting the addition amounts of Al and Ca in such a manner as to satisfy the above ranges, S: 0.01-0.2%, Al: 0.001-0.020% and Ca: 0.0005-0.02%, and the conditions of [S]/[O]: 8-40 [Ca]×[S]: 1×10−5−1×10−3 [Ca]/[S]: 0.01-20 and [Al]: 0.001-0.020% to obtain a steel characterized in that the area in microscopic field occupied by the sulfide inclusions containing Ca of 1.0% or more neighboring to oxide inclusions containing CaO of 8-62% is 2.0×10−4 mm2 or more per 3.5 mm2.
摘要翻译：公开了一种用于机械结构用途的自由切削钢，其总是表现出期望的可加工性，特别是通过用硬质合金刀具切削的切削加工性。该自由切削钢是通过制备基本上由C：0.05-0.8％，Si：0.01-2.5％，Mn：0.1-3.5％和O：0.0005-0.01％的重量％组成的熔融合金制备的，余量为Fe并且不可避免，并且以满足上述范围的方式调节Al和Ca的添加量，S：0.01-0.2％，Al：0.001-0.020％和Ca：0.0005-0.02％，以及 [S] / [O]：8-40 [Ca] x [S]：1×10 -5 -1×10 -3 [Ca] / [S]：0.01-20和[Al]：0.001 -0.020％以获得钢，其特征在于，包含Ca含量为1.0％以上的含有CaO的氧化物夹杂物的含量为1.0％以上的含硫化物夹杂物的微观区域为8-62％，为2.0×10 -4 mm 2或每3.5毫米2更多。

3. 发明授权

US06764645B2 Steel for machine structural use having good machinability and chip-breakability 有权
标题翻译：机械结构用钢具有良好的机械加工性和断屑性
公开(公告)号：US06764645B2
公开(公告)日：2004-07-20
申请号：US10305064
申请日：2002-11-27
申请人： Masakazu Hayaishi , Takashi Kano , Kazuhisa Ishida , Yutaka Kurebayashi , Makoto Hobo
发明人： Masakazu Hayaishi , Takashi Kano , Kazuhisa Ishida , Yutaka Kurebayashi , Makoto Hobo
IPC分类号： C22C3814
CPC分类号： C22C38/60 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/14
摘要： Disclosed is a steel for machine structural use having good machinability and chip-breakability as well as a method of producing the steel. The steel consists essentially of, by wt. %, C: 0.05-0.8%, Si: 0.01-2.0%, Mn: 0.1-3.5%, S: 0.01-0.2%, Al: 0.001-0.020%, Ca: 0.0005-0.02%, O: 0.0005-0.01% and N: 0.001-0.04%, and further, one or both of Ti: 0.002-0.010% and Zr: 0.002-0.025%, the balance being Fe and inevitable impurities. At production of the steel controlled deoxidization is conducted by operation meeting certain conditions so that at least a certain amount of “duplex inclusion” having a specific chemical composition may be formed, and Ti and/or Zr is added to precipitate finely dispersed MnS inclusion particles with nuclei of Ti-oxide and/or Zr-oxide. The finely dispersed MnS inclusions must share a determined part of the total sulfide inclusions.
摘要翻译：公开了一种具有良好的机械加工性和断屑性的机械结构用钢以及钢的制造方法。钢基本上由（重量）％，C：0.05-0.8％，Si：0.01-2.0％，Mn：0.1-3.5％，S：0.01-0.2％，Al：0.001-0.020％，Ca：0.0005-0.02％，O：0.0005-0.01％和N：0.001-0.04％，进一步，Ti：0.002-0.010％和Zr：0.002-0.025％中的一种或两种，余量为Fe和不可避免的杂质。在钢管控制脱氧的生产中，通过满足某些条件的操作进行操作，使得可以形成至少一定量的具有特定化学组成的“双相夹杂物”，并加入Ti和/或Zr以沉淀细分散的MnS夹杂物颗粒具有Ti氧化物和/或氧化锆的核。精细分散的MnS夹杂物必须共享硫化物总含量的确定部分。

4. 发明申请

US20050265886A1 Steel for machine structural use excellent in friability of chips 审中-公开
标题翻译：机械结构用钢优良的切屑脆性
公开(公告)号：US20050265886A1
公开(公告)日：2005-12-01
申请号：US10523990
申请日：2003-08-06
申请人： Masakazu Hayaishi , Takashi Kano , Noriyuki Yamada , Katsuaki Siiki
发明人： Masakazu Hayaishi , Takashi Kano , Noriyuki Yamada , Katsuaki Siiki
IPC分类号： C22C38/00 , C22C38/02 , C22C38/04 , C22C38/14 , C22C38/18 , C22C38/22 , C22C38/60
CPC分类号： C22C38/002 , C21D6/005 , C21D6/008 , C21D2211/004 , C21D2261/00 , C22C38/02 , C22C38/04 , C22C38/14 , C22C38/18 , C22C38/22 , C22C38/60
摘要： Disclosed is a free cutting steel for machine structural use having excellent chip-breakability. The steel consists essentially of, by wt. %. C: 0.05-0.8%, Si: 0.01-2.5%, Mn: 0.1-3.5%, S: 0.01-0.2%, Ca or Ca+Mg; 0.0005-0.02%, Ti: 0.002-0.010% and/or Zr: 0.002-0.025%, O: 0.0005-0.010%, and the balance of impurities and Fe. At least five MnS inclusion particles having averaged particles sizes of 1.0 μm or more exists per mm2 per 0.01% of S-content in the steel. The steel satisfies the condition that, in the microscopic fields, (area[μm2]/aspect ratio)≧10, and that the the area percentage of Ca-containing sulfide inclusions containing at least 1.0 wt. % of Ca is in the range of 15-40% of the area of all the sulfide inclusions.
摘要翻译：公开了一种机械结构用自由切削钢，具有优异的断屑性。钢基本上由（重量）％。 C：0.05-0.8％，Si：0.01-2.5％，Mn：0.1-3.5％，S：0.01-0.2％，Ca或Ca + Mg; 0.0005-0.02％，Ti：0.002-0.010％和/或Zr：0.002-0.025％，O：0.0005-0.010％，其余为杂质和Fe。在钢中每0.01％的S含量存在平均粒径为1.0μm或更大的至少五个MnS夹杂物颗粒。该钢满足以下条件：在微观领域（面积[mam] /长宽比）> = 10，并且含有至少1.0重量％的含Ca的硫化物夹杂物的面积百分比。 Ca的％在所有硫化物夹杂物的面积的15-40％的范围内。

5. 发明申请

US20100300168A1 Method for Shot Peening 有权
标题翻译：喷丸硬化方法
公开(公告)号：US20100300168A1
公开(公告)日：2010-12-02
申请号：US12745156
申请日：2008-11-21
申请人： Ryohei Ishikura , Takashi Kano , Makio Kato , Yuji Kobayashi , Satoru Ujihashi , Kiyoshi Okumura
发明人： Ryohei Ishikura , Takashi Kano , Makio Kato , Yuji Kobayashi , Satoru Ujihashi , Kiyoshi Okumura
IPC分类号： C21D7/06 , B24C1/10
CPC分类号： B24C1/10 , B24C1/086 , C21D1/26 , C21D7/06 , C21D2211/001 , C21D2211/008 , Y10T29/479
摘要： The object of the present invention is to provide a method for shot peening by which a compressive residual stress that is higher than any achieved by the conventional method can be achieved while the thickness of the processed material that is scraped is suppressed. The method is characterized in that the shot materials are shot against the processed material that has the hardness of 750 HV or more that is calculated from equations (1) to (3) below. The shot materials have Vickers hardness that is higher than the hardness of the processed material by 50 HV to 250 HV. The thickness of the processed material that is to be scraped is suppressed to 5 μm or less. HV(m)={f(C)−f(T,t)}(1−γR/100)+400×γR/100 Equation (1) f(C)=−660C2+1373C+278 Equation (2) f(T,t)=0.05T(log t+17)−318 Equation (3) where C denotes the C (carbon) content in the surface layer that is achieved by carburizing (mass %), T denotes the tempering temperature (K), t denotes the tempering time (hr), and γR denotes the amount of residual austenite (vol. %).
摘要翻译：本发明的目的是提供一种用于喷丸硬化的方法，通过该方法可以获得高于通过常规方法实现的压缩残余应力，同时抑制被刮除的被处理材料的厚度。该方法的特征在于，针对由下述等式（1）至（3）计算的具有750HV或更高的硬度的处理材料进行喷丸处理。喷丸材料的维氏硬度比加工材料的硬度高50HV至250HV。要被刮削的被处理材料的厚度被抑制在5μm以下。 HV（m）= {f（C）-f（T，t）}（1-γR/ 100）+ 400×γR/ 100等式（1）f（C）= - 660C2 + 1373C + f（T，t）= 0.05T（log t + 17）-318等式（3）其中C表示通过渗碳实现的表面层中的C（碳）含量（质量％），T表示回火温度 K），t表示回火时间（hr），γR表示残留奥氏体量（体积％）。

6. 发明申请

US20100252913A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100252913A1
公开(公告)日：2010-10-07
申请号：US12818694
申请日：2010-06-18
申请人： Nobuhiko Hayashi , Takashi Kano
发明人： Nobuhiko Hayashi , Takashi Kano
IPC分类号： H01L29/20
CPC分类号： H01S5/32341 , H01L21/31608 , H01L33/007 , H01S5/0216 , H01S5/0217 , H01S2304/12
摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.
摘要翻译：在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后使用外延横向生长在GaN层和SiO 2膜上生长包括MQW有源层的GaN半导体层。通过蚀刻除去在SiO 2膜上的区域中的GaN基半导体层，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极，以将p电极连接到GaN基半导体层涉及GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。

7. 发明申请

US20100139451A1 CRANKSHAFT MEMBER AND MANUFACTURING METHOD THEREOF 有权
标题翻译：起重机构及其制造方法
公开(公告)号：US20100139451A1
公开(公告)日：2010-06-10
申请号：US12630536
申请日：2009-12-03
申请人： Isamu SAITO , Yoshihiro Takitani , Shinichiro Kato , Makoto Hobo , Keiichiro Kamiya , Takahiro Miyazaki , Takashi Kano
发明人： Isamu SAITO , Yoshihiro Takitani , Shinichiro Kato , Makoto Hobo , Keiichiro Kamiya , Takahiro Miyazaki , Takashi Kano
IPC分类号： F16C3/06 , B21K1/08
CPC分类号： F16C3/06 , B21K1/08 , C23C8/32 , Y10T29/49286 , Y10T74/2173
摘要： The invention relates to a crankshaft member having high fatigue strength and good bending correctability, and its method of manufacture. The steel made crankshaft member mainly consists of a two-phase structure of ferrite and perlite. The steel includes C, Ni, Mn, and Cr as required elements and Si, Cu, Mo, Ti, V, Nb, Ca, and S as optional elements that may be included, in the amounts of C within the range of 0.20 to 0.50 wt %, Si within the range of 0 to 0.6 wt %, Mn within the range of 0.5 to 1.5 wt %, Cu within the range of 0 to 0.7 wt %, Ni within the range of 0.05 to 1.5 wt %, Cr within the range of 0.05 to 0.45 wt %, and Mo within the range of 0 to 0.5 wt % to satisfy the condition 115≧70 C+8 Si+23 Mn+11 Cu+128 Cr+83 Mo≧50. A portion of the member surface is provided at least with a hard nitride layer having an average hardness within the range of 300 to 450 HV. Lamellar spacing of the perlite is 0.3 μm or less.
摘要翻译：本发明涉及具有高疲劳强度和良好的弯曲矫正性的曲轴件及其制造方法。钢制曲轴构件主要由铁素体和珍珠岩的两相结构组成。所述钢包含C，Ni，Mn和Cr作为要素，Si，Cu，Mo，Ti，V，Nb，Ca和S作为可以包含的任意元素，C的量在0.20〜 0.50重量％，Si在0〜0.6重量％的范围内，Mn在0.5〜1.5重量％的范围内，Cu在0〜0.7重量％的范围内，Ni在0.05〜1.5重量％的范围内，Cr在 0.05〜0.45重量％的范围，Mo在0〜0.5重量％的范围内，满足条件115≥70℃+ 8Si + 23 Mn + 11 Cu + 128 Cr + 83Mo≥50。构件表面的一部分至少设置有平均硬度在300至450HV范围内的硬质氮化物层。珍珠岩的层状间隔为0.3μm以下。

8. 发明授权

US07567605B2 Semiconductor laser device and method of fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07567605B2
公开(公告)日：2009-07-28
申请号：US11393891
申请日：2006-03-31
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
摘要翻译：获得能够降低阈值电流并提高发光效率的半导体激光器件及其制造方法。该半导体激光器件包括具有主表面和半导体元件层的半导体衬底，该半导体衬底形成在半导体衬底的主表面上，其主表面相对于半导体衬底的主表面大致倾斜并且包括发射层。

9. 发明申请

US20090114941A1 Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer 有权
公开(公告)号：US20090114941A1
公开(公告)日：2009-05-07
申请号：US12149960
申请日：2008-05-12
申请人： Nobuhiko Hayashi , Takashi Kano
发明人： Nobuhiko Hayashi , Takashi Kano
IPC分类号： H01L33/00 , H01L21/00 , H01L21/20 , H01L21/02
CPC分类号： H01S5/32341 , H01L21/31608 , H01L33/007 , H01S5/0216 , H01S5/0217 , H01S2304/12
摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

10. 发明申请

US20090010292A1 Nitride-based semiconductor laser device 审中-公开
标题翻译：基于氮化物的半导体激光器件
公开(公告)号：US20090010292A1
公开(公告)日：2009-01-08
申请号：US12213914
申请日：2008-06-26
申请人： Yasuhiko Nomura , Takashi Kano
发明人： Yasuhiko Nomura , Takashi Kano
IPC分类号： H01S5/34
CPC分类号： B82Y20/00 , H01S5/2009 , H01S5/34333 , H01S2301/173 , H01S2301/18
摘要： A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.
摘要翻译：获得能够延长寿命的氮化物系半导体激光装置。该氮化物系半导体激光装置包括由第一导电型氮化物系半导体构成的第一包层，形成在第一包层上的由氮化物系半导体和第二包层构成的发光层，发射层，由第二导电型氮化物基半导体组成，而发射层包括发射光的有源层，用于限制光的导光层和布置在有源层和导光层之间的载流子阻挡层，具有比导光层更大的带隙。

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