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1. 发明授权

US06927436B1 Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory 失效
标题翻译：氧化物，氧化铈，氧化ium，氧化物多层结构，场效应晶体管的制造方法，铁电非易失性存储器的制造方法和铁电非易失性存储器的晶体生长方法
公开(公告)号：US06927436B1
公开(公告)日：2005-08-09
申请号：US10429616
申请日：2003-05-05
申请人： Takaaki Ami , Yuichi Ishida , Naomi Nagasawa , Masayuki Suzuki , Akio Machida
发明人： Takaaki Ami , Yuichi Ishida , Naomi Nagasawa , Masayuki Suzuki , Akio Machida
IPC分类号： C30B23/02 , H01L21/02 , H01L21/316 , H01L29/51 , H01L29/78 , H01L29/76
CPC分类号： C30B23/02 , C30B29/16 , H01L21/31604 , H01L21/31612 , H01L28/56 , H01L29/516 , H01L29/78391
摘要： An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.
摘要翻译：外延稀土氧化物（001）/硅（001）结构通过在（001）取向的硅衬底上以（001）取向外延生长二氧化铈等二氧化铈来实现。为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并将立方晶系或四方晶系稀土氧化物如CeO 2 例如通过分子束外延在Si衬底上以（001）取向外延生长。在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。如果需要，在生长后在真空中进行退火。

2. 发明授权

US06749686B2 Crystal growth method of an oxide and multi-layered structure of oxides 失效
标题翻译：氧化物的晶体生长方法和氧化物的多层结构
公开(公告)号：US06749686B2
公开(公告)日：2004-06-15
申请号：US10127155
申请日：2002-04-19
申请人： Takaaki Ami , Yuichi Ishida , Naomi Nagasawa , Masayuki Suzuki , Akio Machida
发明人： Takaaki Ami , Yuichi Ishida , Naomi Nagasawa , Masayuki Suzuki , Akio Machida
IPC分类号： C30B2502
CPC分类号： H01L21/02293 , C30B23/02 , C30B25/02 , C30B29/16 , H01L21/02192 , H01L21/3147 , H01L21/31604 , H01L21/31654
摘要： An epitaxial rare earth oxide (110)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (110) orientation on a (001)-oriented silicon substrate at a growth temperature lower than conventional ones. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (110) orientation on the Si substrate in an atmosphere containing an oxidic gas by using a source material made up of at least one kind of rare earth element. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate.
摘要翻译：外延稀土氧化物（110）/硅（001）结构通过在（001）取向的硅衬底上以比常规的生长温度外延生长（110）取向中的二氧化铈等稀土氧化物。为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并且外延生长立方晶系或四方晶系稀土氧化物，例如CeO 2膜通过使用由至少一种稀土元素构成的源材料，在含有氧化性气体的气氛中在Si衬底上的（110）取向。在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。

3. 发明授权

US06610548B1 CRYSTAL GROWTH METHOD OF OXIDE, CERIUM OXIDE, PROMETHIUM OXIDE, MULTI-LAYERED STRUCTURE OF OXIDES, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR, MANUFACTURING METHOD OF FERROELECTRIC NON-VOLATILE MEMORY AND FERROELECTRIC NON-VOLATILE MEMORY 失效
标题翻译：氧化物，氧化铈，氧化锆，氧化物多层结构的晶体生长方法，场效应晶体管的制造方法，电磁非易失性存储器和非电磁非易失性存储器的制造方法
公开(公告)号：US06610548B1
公开(公告)日：2003-08-26
申请号：US09532793
申请日：2000-03-22
申请人： Takaaki Ami , Yuichi Ishida , Naomi Nagasawa , Masayuki Suzuki , Akio Machida
发明人： Takaaki Ami , Yuichi Ishida , Naomi Nagasawa , Masayuki Suzuki , Akio Machida
IPC分类号： H01L2100
CPC分类号： H01L21/02293 , C30B23/02 , C30B29/16 , H01L21/02192 , H01L21/31604 , H01L21/31612 , H01L28/56 , H01L29/516 , H01L29/78391
摘要： An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.
摘要翻译：外延稀土氧化物（001）/硅（001）结构通过在（001）取向的硅衬底上以（001）取向外延生长二氧化铈等二氧化铈来实现。为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并且外延生长立方晶系或四方晶系稀土氧化物，例如CeO 2膜例如通过分子束外延在Si衬底上的（001）取向。在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。如果需要，在生长后在真空中进行退火。

4. 发明授权

US06174463B1 Layer crystal structure oxide, production method thereof and memory element using the same 失效
标题翻译：层结晶氧化物，其制造方法和使用其的存储元件
公开(公告)号：US06174463B1
公开(公告)日：2001-01-16
申请号：US09048050
申请日：1998-03-26
申请人： Akio Machida , Naomi Nagasawa , Takaaki Ami , Masayuki Suzuki
发明人： Akio Machida , Naomi Nagasawa , Takaaki Ami , Masayuki Suzuki
IPC分类号： H01B108
CPC分类号： C30B25/22 , C30B23/02 , C30B29/22 , C30B29/225
摘要： A layer crystal structure oxide, and memory element comprising same, comprising bismuth (Bi), a first element, a second element and oxygen (O), wherein the first element is at least one selected from the group consisting of sodium (Na), potassium (K), calcium (Ca), barium (Ba), strontium (Sr), lead (Pb), and bismuth (Bi), the second element is at least one selected from the group consisting of iron (Fe), titanium (Ti), niobium (Nb), tantalum (Ta), and tungsten (W), and the composition ratio of the bismuth with respect to the second element is larger than the stoichiometric composition ratio, wherein, the composition ratio of the bismuth with respect to the first element is in the range of (2±0.17)/(m−1) including the stoichiometric composition ratio 2/(m−1), where m is an integer from, and including, 2 to 5.
摘要翻译：包含铋（Bi），第一元素，第二元素和氧（O）的层结晶氧化物和包含它的记忆元件，其中第一元素是选自由钠（Na），钾（K），钙（Ca），钡（Ba），锶（Sr），铅（Pb）和铋（Bi）中的至少一种，第二元素是选自铁（Fe）（Ti），铌（Nb），钽（Ta）和钨（W），铋相对于第二元素的组成比大于化学计量组成比，其中，铋与相对于第一元素在包括化学计量组成比2 /（m-1）的（2±0.17）/（m-1）的范围内，其中m是从2到5的整数。

5. 发明授权

US6106616A Layer crystal structure oxide, production method thereof, and memory element using the same 失效
标题翻译：层结晶氧化物，其制造方法以及使用其的存储元件
公开(公告)号：US6106616A
公开(公告)日：2000-08-22
申请号：US149712
申请日：1998-09-09
申请人： Akio Machida , Naomi Nagasawa , Takaaki Ami , Masayuki Suzuki
发明人： Akio Machida , Naomi Nagasawa , Takaaki Ami , Masayuki Suzuki
IPC分类号： C30B23/02 , C30B25/22 , C30B23/06
CPC分类号： C30B25/22 , C30B23/02 , C30B29/22 , C30B29/225
摘要： A production method of a crystal structure oxide that includes the steps of evaporating the material by heating the material to generate a gas phase and precipitating crystals from the gas phase at a precipitating part so as to produce a layer crystal structure oxide. The precipitating part is provided away from the material in a range of greater than or equal to about 10 mm to about 30 mm.
摘要翻译：一种晶体结构氧化物的制造方法，包括以下步骤：通过加热材料来蒸发材料以产生气相，并在沉淀部分从气相析出晶体，从而产生层状结晶氧化物。在大于或等于约10mm至约30mm的范围内远离材料提供沉淀部分。

6. 发明授权

US6143679A Layered crystal structure oxide 失效
标题翻译：层状结晶氧化物
公开(公告)号：US6143679A
公开(公告)日：2000-11-07
申请号：US943791
申请日：1997-10-03
申请人： Naomi Nagasawa , Akio Machida , Takaaki Ami , Masayuki Suzuki
发明人： Naomi Nagasawa , Akio Machida , Takaaki Ami , Masayuki Suzuki
IPC分类号： C30B9/00 , C04B35/01 , C04B35/50
CPC分类号： C30B29/225 , C30B29/32 , C30B9/00
摘要： Provided are a layered crystal structure oxide showing ferroelectricity or paraelectricity and a process for easily producing the same. A raw material containing Bi.sub.2 O.sub.3 as a flux is heated up to 1330.degree. C. or higher and 1450.degree. C. or lower at a suitable temperature-elevating rate (heating step); the raw material is maintained at this heating temperature for prescribed time (constant temperature step); and then, it is slowly cooled down to 800.degree. C. or higher and 1300.degree. C. or lower at a rate of 1.degree. C./hour or more and 20.degree. C./hour or less (slow cooling step). This makes it possible to evaporate the flux and take out directly Bi.sub.2 SrTa.sub.2 O.sub.9. In this Bi.sub.2 SrTa.sub.2 O.sub.9, Bi is partially substituted with Sr, and oxygen is selectively deficient or disordered. Or, Bi and O in the fluorite layer are relatively displaced each other in the polarization direction.
摘要翻译：提供了显示铁电性或顺电性的层状晶体结构氧化物及其制造方法。将含有Bi 2 O 3作为助熔剂的原料以合适的升温速度（加热步骤）加热至1330℃以上且1450℃以下。原料在该加热温度下保持规定时间（恒温步骤）; 然后以1℃/小时以上20℃/小时以下的速度缓慢冷却至800℃以上且1300℃以下（缓慢冷却工序）。这使得可以蒸发通量并直接取出Bi2SrTa2O9。在Bi2SrTa2O9中，Bi部分被Sr取代，氧被选择性地缺陷或无序。或者，萤石层中的Bi和O在偏振方向上相对位移。

7. 发明授权

US06171871B2 Ferroelectric memory device and their manufacturing methods 失效
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US06171871B2
公开(公告)日：2001-01-09
申请号：US09078678
申请日：1998-05-14
申请人： Akio Machida , Naomi Nagasawa , Takaaki Ami , Masayuki Suzuki
发明人： Akio Machida , Naomi Nagasawa , Takaaki Ami , Masayuki Suzuki
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/31691 , H01L27/11507
摘要： It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.
摘要翻译：旨在提供具有优异的铁电性的铁电体。提供的铁电体是具有由Bi，第一元素Me，第二元素R和O组成的层状晶体结构的氧化物。第一元素Me是选自Na，K，Ca ，Ba，Sr，Pb和Bi。第二元素R是选自Fe，Ti，Nb，Ta和W中的至少一种元素。铁电体全体的98％以上表现出铁电性。在通过气相法（晶体生长步骤）生长具有层状晶体结构的氧化物之后，将电极附着到具有层状晶体结构的氧化物并施加电压（电压施加步骤）。结果，至少部分地校正晶格的应变，由于由于失去晶格的对称性的这种大的应变，完全不显示铁电性的部分或者没有表现出优异的铁电性，从而表现出优异的铁电性。

8. 发明授权

US06207082B1 Layer-structured oxide and process of producing the same 失效
标题翻译：层状氧化物及其制造方法
公开(公告)号：US06207082B1
公开(公告)日：2001-03-27
申请号：US08848613
申请日：1997-04-29
申请人： Masayuki Suzuki , Naomi Nagasawa , Akio Machida , Takaaki Ami
发明人： Masayuki Suzuki , Naomi Nagasawa , Akio Machida , Takaaki Ami
IPC分类号： H01B102
CPC分类号： H01L21/31691 , C01G29/006 , C01G35/006 , C01P2002/20 , C01P2002/72 , C01P2002/88 , C01P2006/60 , C30B9/00 , C30B29/30
摘要： A layer-structured oxide exhibiting a paraelectric characteristic and a layer-structured oxide having a preferable remanent polarization, and a process of producing the same. A layer-structured oxide containing Bi, a first component Me, a second component R, and O is produced by heating raw materials at a high temperature of about 1400° C. for several ten minutes by a self-flux method using Bi2O3 as a flux. The first component Me is composed of at least one kind selected from a group consisting of Sr, Pb, Ba, and Ca, and the second component R is composed of at least one kind selected from a group consisting of Nb and Ta. The composition formula of the oxide is expressed by Bi2−aMe1+bR2O9+c where a, b, and c are values in ranges of 0
摘要翻译：表现出顺电特性的层状氧化物和具有优选的剩余极化的层状氧化物及其制造方法。通过使用Bi 2 O 3作为主要成分的自身通过法，通过在约1400℃的高温下加热原料数十分钟来制造含有Bi，第一成分Me，第二成分R和O的层状氧化物。助焊剂第一组分Me由选自Sr，Pb，Ba和Ca中的至少一种组成，第二组分R由选自Nb和Ta中的至少一种组成。氧化物的组成式由Bi2-aMe1 + bR2O9 + c表示，其中a，b和c是0

9. 发明授权

US06577039B2 Driving system and actuator 失效
标题翻译：驱动系统和执行器
公开(公告)号：US06577039B2
公开(公告)日：2003-06-10
申请号：US09739224
申请日：2000-12-18
申请人： Yuichi Ishida , Naomi Nagasawa , Masayuki Suzuki , Takaaki Ami , Teiichiro Nishimura
发明人： Yuichi Ishida , Naomi Nagasawa , Masayuki Suzuki , Takaaki Ami , Teiichiro Nishimura
IPC分类号： A61F208
CPC分类号： A61F2/08 , A61F2002/0894 , F03G7/005
摘要： A driving system using an intercalation substance as a novel mechanochemical system includes an actuator using the intercalation substance and driven by exchange of solutions or by changing concentration of a solution, and a solution supplier that supplies the actuator with the driving solution or solutions. The actuator is composed of one or more cylindrical or fiber-shaped elements each extending in the expanding and contracting direction of the intercalation substance, or one or more film-shaped or plate-shaped elements each having a major surface extending vertically of the expanding and contracting direction of the intercalation substance. The driving system is used as artificial muscle, for example.
摘要翻译：使用插层物质作为新型机械化学系统的驱动系统包括使用插层物质并通过交换溶液或改变溶液浓度驱动的致动器以及为致动器供应驱动溶液或解决方案的解决方案供应商。致动器由一个或多个圆柱形或纤维形元件组成，每个元件沿插入物质的膨胀和收缩方向延伸，或者一个或多个膜形或板状元件，每个元件或板状元件都具有垂直于膨胀物体的垂直方向延伸的主表面，插层物质的收缩方向。驾驶系统例如用作人造肌肉。

10. 发明授权

US06400489B1 Solid-state displacement element, optical element, and interference filter 有权
标题翻译：固态位移元件，光学元件和干涉滤波器
公开(公告)号：US06400489B1
公开(公告)日：2002-06-04
申请号：US09610583
申请日：2000-07-05
申请人： Masayuki Suzuki , Yuichi Ishida , Naomi Nagasawa , Takaaki Ami , Teiichiro Nishimura
发明人： Masayuki Suzuki , Yuichi Ishida , Naomi Nagasawa , Takaaki Ami , Teiichiro Nishimura
IPC分类号： B02F100
CPC分类号： G02F1/21 , G02F1/0126 , G02F1/133362 , G02F1/216
摘要： A solid-state displacement element includes an inorganic layered compound having a layered structure and an organic substance inserted between layers of the inorganic layered compound. The solid-state displacement element expands or contracts in the lamination direction of the inorganic layered compound when irradiated with controlling light. An optical element and an interference filter using the same principle of expansion or contraction as that in the solid-state displacement element are also disclosed.
摘要翻译：固态置换元件包括具有层状结构的无机层状化合物和插入无机层状化合物的层之间的有机物质。当用控制光照射时，固态位移元件在无机层状化合物的层叠方向上膨胀或收缩。还公开了使用与固态位移元件相同的膨胀或收缩原理的光学元件和干涉滤光器。

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