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1. 发明申请

US20210328087A1 THERMOPHOTOVOLTAIC CELLS WITH INTEGRATED AIR-BRIDGE FOR IMPROVED EFFICIENCY 有权
公开(公告)号：US20210328087A1
公开(公告)日：2021-10-21
申请号：US17232243
申请日：2021-04-16
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN
发明人： Tobias BURGER , Byungjun LEE , Dejiu FAN , Andrej LENERT , Stephen R. FORREST
IPC分类号： H01L31/0687 , H01L31/18 , G03F7/00 , H01L31/0232 , H01L31/0264 , H01L33/00 , C30B25/04 , C30B25/22 , H01L31/043 , H01L31/0735
摘要： To reach high efficiencies, thermophotovoltaic cells must utilize the broad spectrum of a radiative thermal source. One promising approach to overcome this challenge is to have low-energy photons reflected and reabsorbed by the thermal emitter, where their energy can have another chance at contributing toward photogeneration in the cell. However, current methods for photon recuperation are limited by insufficient bandwidth or parasitic absorption, resulting in large efficiency losses relative to theoretical limits. This work demonstrates nearly perfect reflection of low-energy photons (˜99%) by embedding an air layer within the TPV cell. This result represents a four-fold reduction in parasitic absorption relative to existing TPV cells. As out-of-band reflectance approaches unity, TPV efficiency becomes nearly insensitive to cell bandgap and emitter temperature. Accessing this regime unlocks a range of possible materials and heat sources that were previously inaccessible to TPV energy conversion.

2. 发明申请

US20200208298A1 DIAMONDS AND HETERO-EPITAXIAL METHODS OF FORMING DIAMONDS 审中-公开
公开(公告)号：US20200208298A1
公开(公告)日：2020-07-02
申请号：US16811926
申请日：2020-03-06
申请人： J2 Materials, LLC
发明人： John P. Ciraldo , Jonathan Levine-Miles
IPC分类号： C30B25/22 , C30B29/04 , C30B25/12 , C30B29/68
摘要： A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

3. 发明授权

US09824886B2 Stress mitigating amorphous SiO2 interlayer 有权
公开(公告)号：US09824886B2
公开(公告)日：2017-11-21
申请号：US15031504
申请日：2014-10-27
申请人： TRANSLUCENT, INC.
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun
IPC分类号： H01L21/02 , C30B25/22 , C30B25/18 , C30B29/16 , C30B29/40 , H01L33/00 , H01L33/12 , H01L33/32
CPC分类号： H01L21/02488 , C30B25/183 , C30B25/22 , C30B29/16 , C30B29/403 , H01L21/02381 , H01L21/02433 , H01L21/02483 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO on the substrate. The single crystal REO has a lattice constant adjacent the substrate matching the lattice constant of the substrate and a lattice constant matching a selected III-N material adjacent an upper surface. A uniform layer of a-Si is formed on the REO. A second layer of REO is deposited on the layer of a-Si with the temperature required for epitaxial growth crystallizing the layer of a-Si and the crystallized silicon being transformed to amorphous silicon after transferring the lattice constant of the selected III-N material of the first layer of REO to the second layer of REO, and a single crystal layer of the selected III-N material deposited on the second layer of REO.

4. 发明申请

US20160298263A1 PROCESS GAS PREHEATING SYSTEMS AND METHODS FOR DOUBLE-SIDED MULTI-SUBSTRATE BATCH PROCESSING 有权
标题翻译：过程气体预处理系统和双面多基板批处理方法
公开(公告)号：US20160298263A1
公开(公告)日：2016-10-13
申请号：US15092875
申请日：2016-04-07
申请人： APPLIED MATERIALS, INC.
发明人： DAVID MASAYUKI ISHIKAWA , PAUL J. STEFFAS , SUMEDH ACHARYA , BRIAN H. BURROWS
IPC分类号： C30B25/22 , H01L21/02 , H01L21/67 , C30B29/06 , C30B25/12 , C30B25/14 , C30B25/10 , H01L31/18 , H01L21/687
CPC分类号： C30B25/22 , C23C16/45502 , C23C16/45512 , C23C16/4557 , C23C16/46 , C30B25/10 , C30B25/12 , C30B25/14 , C30B29/06 , H01L21/02532 , H01L21/0262 , H01L21/67103 , H01L21/67109 , H01L21/6719 , H01L21/68771 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In some embodiments, an substrate processing system may include a chamber body, a heater assembly disposed within the chamber body, wherein the heater assembly includes a plurality of resistive heater elements coupled together to form an isothermal heated enclosure, and a process kit disposed within the isothermal heated enclosure and having an inner processing volume that includes a plurality of substrate supports to support substrates when disposed thereon, wherein the process kit includes a first processing gas inlet to provide processing gases to the inner processing volume, a first carrier gas inlet to provide a carrier gas to the inner processing volume, and a first exhaust outlet, and a first gas heater coupled via a first conduit to the first carrier gas inlet to heat the carrier gas prior to flowing into the inner processing volume.
摘要翻译：在一些实施例中，衬底处理系统可以包括室主体，设置在室主体内的加热器组件，其中加热器组件包括耦合在一起以形成等温加热外壳的多个电阻加热器元件，以及设置在室主体内的处理套件等温加热的外壳并且具有内部处理体积，其包括多个基板支撑件，以在其上设置时支撑基板，其中所述处理套件包括用于向内部处理体积提供处理气体的第一处理气体入口，第一载气入口，以提供到内部处理体积的载气和第一排气出口，以及经由第一导管连接到第一载气入口的第一气体加热器，以在流入内部处理容积之前加热载气。

5. 发明授权

US07959731B2 Method for producing semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US07959731B2
公开(公告)日：2011-06-14
申请号：US11665977
申请日：2005-11-02
申请人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
IPC分类号： C30B25/22
CPC分类号： H01L21/26506 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L21/76254 , Y10S117/915
摘要： A method for producing a semiconductor wafer, including epitaxially growing a Si1-XGeX layer (0
摘要翻译：一种制造半导体晶片的方法，包括在硅单晶晶片的表面上外延生长Si1-XGeX层（0

6. 发明授权

US6110290A Method for epitaxial growth and apparatus for epitaxial growth 失效
标题翻译：外延生长方法和外延生长装置
公开(公告)号：US6110290A
公开(公告)日：2000-08-29
申请号：US12452
申请日：1998-01-23
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： C30B25/10 , C23C16/44 , C23C16/455 , C23C16/46 , C30B25/02 , C30B25/14 , C30B25/22 , H01L21/205 , C23C14/00
CPC分类号： C30B25/22 , C30B29/06
摘要： This invention concerns a method for epitaxial growth by the use of a so-called heterogeneous reaction and includes disposing a source material in a first area of a horizontal chamber, disposing a growth substrate in a second area thereof, heating the first area thereby keeping the source material at a first temperature, heating the second area thereby keeping the growth substrate at a second temperature, lower than the first temperature, introducing a reaction gas into the chamber thereby causing the reaction gas to react with the source material and depositing the resultant reaction product on the growth substrate and consequently obtaining formation of a film by epitaxial growth.
摘要翻译：本发明涉及通过使用所谓的非均相反应进行外延生长的方法，包括将源材料设置在水平室的第一区域中，将生长衬底放置在其第二区域中，加热第一区域从而保持在第一温度下加热第二区域，从而将生长衬底保持在低于第一温度的第二温度，将反应气体引入室中，从而使反应气体与源材料反应并沉积所得反应产物在生长衬底上，从而通过外延生长获得膜的形成。

7. 发明授权

US4756792A Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film 失效
标题翻译：单晶砷化镓薄膜的气相外延生长方法
公开(公告)号：US4756792A
公开(公告)日：1988-07-12
申请号：US904178
申请日：1986-09-05
申请人： Hisanori Fujita , Masaaki Kanayama
发明人： Hisanori Fujita , Masaaki Kanayama
IPC分类号： H01L21/20 , C30B25/02 , C30B25/16 , H01L21/18 , H01L21/205 , C30B25/12 , C30B25/22
CPC分类号： H01L21/02546 , C30B25/02 , C30B29/42 , H01L21/02395 , H01L21/02433 , H01L21/02576 , H01L21/0262 , H01L21/02658
摘要： In a GaAs epitaxial wafer including, for example, two epitaxial layers having high and low carrier concentrations, the carrier concentration of the low carrier concentration layer is liable to greatly vary, so that wafers suitable for FETs and Schottky barrier diodes operated at UHF and SHF are produced at only a low yield. This drawback is eliminated by adjusting the heating temperature of GaAs substrate to 690.degree. to 730.degree. C. during the growth of the low carrier concentration layer.
摘要翻译：在包括例如具有高和低载流子浓度的两个外延层的GaAs外延晶片中，低载流子浓度层的载流子浓度易于大大变化，使得适用于FET的肖特基势垒二极管和肖特基势垒二极管在UHF和SHF 仅以低产量生产。通过在低载流子浓度层的生长期间将GaAs衬底的加热温度调节至690℃至730℃来消除该缺点。

8. 发明授权

US4743310A HGCDTE epitaxially grown on crystalline support 失效
标题翻译： HGCDTE外延生长在结晶支持
公开(公告)号：US4743310A
公开(公告)日：1988-05-10
申请号：US10028
申请日：1987-02-02
申请人： Robert E. Kay , Hakchill Chan , Fred Ju , Burton A. Bray
发明人： Robert E. Kay , Hakchill Chan , Fred Ju , Burton A. Bray
IPC分类号： C30B25/02 , C30B25/22 , H01L21/363
CPC分类号： C30B25/02 , C30B25/22 , C30B29/48 , H01L21/0237 , H01L21/02411 , H01L21/0248 , H01L21/02562 , H01L21/02631 , Y10S148/064 , Y10T428/12528
摘要： A layer of HgCdTe (15) is epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500.degree. C. and 625.degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are non-isothermal. In a second growth step embodiment, the source (3) and substrate (5) are isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400.degree. C. and 500.degree. C. for a time of between 1 hour and 16 hours. Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis, and for polishing the finished HgCdTe layer (15).
摘要翻译：在晶体载体（10）上外延生长一层HgCdTe（15）。首先将单晶CdTe衬底（5）外延生长至1微米至5微米的厚度至载体（10）上。然后，HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。基材（5）和源（3）在绝热的可重复使用的安瓿（17）中在500℃至625℃的生长温度范围内一起加热5分钟至13小时的生长时间。在第一生长步骤的实施例中，源（3）和衬底（5）是非等温的。在第二生长步骤的实施例中，源（3）和衬底（5）是等温的。然后进行可选的相互扩散步骤，其中将源（3）和基底（5）在400℃至500℃的温度范围内冷却1小时至16小时。公开了用于在HgTe（3）合成期间防止反应物污染并用于抛光最终的HgCdTe层（15）的手段。

9. 发明授权

US4262630A Method of applying layers of source substance over recipient and device for realizing same 失效
标题翻译：将源物质层应用于接收者和实现相同装置的方法
公开(公告)号：US4262630A
公开(公告)日：1981-04-21
申请号：US955024
申请日：1978-10-25
申请人： Ellin P. Bochkarev , Nikolai G. Voronin , Oleg E. Korobov , Vadim N. Maslov , Irina B. Nikitina
发明人： Ellin P. Bochkarev , Nikolai G. Voronin , Oleg E. Korobov , Vadim N. Maslov , Irina B. Nikitina
IPC分类号： C23C14/24 , C30B23/02 , C30B25/22 , C23C13/08
CPC分类号： C23C14/24 , C30B23/02 , C30B25/22 , Y10S438/925
摘要： A method of applying a layer of a source substance over a recipient, consisting in that the substance of the source is converted to gas and then precipitated onto the surface of the recipient, wherein the substance is, according to the invention, applied over at least one intermediate body and then the substance is transferred from the intermediate body onto the recipient.
摘要翻译：将源物质层施加在接受者上的方法，其包括将源的物质转化为气体，然后沉淀到接受者的表面上，其中根据本发明的物质至少应用于一个中间体，然后物质从中间体转移到接受者身上。

10. 发明授权

US4100879A Device for epitaxial growing of semiconductor periodic structures from gas phase 失效
标题翻译：用于从气相外延生长半导体周期性结构的器件
公开(公告)号：US4100879A
公开(公告)日：1978-07-18
申请号：US766775
申请日：1977-02-08
申请人： Grigory Borisovich Goldin , Valentin Petrovich Khlebnikov , Jury Vasilievich Jushkov , Vadim Nikolaevich Maslov , Oleg Evgenievich Korobov , Vladimir Petrovich Kuklev , Vladimir Grigorievich Demyanets , Ljudvig Alexandrovich Dolomanov , Emilia Stanislavovna Kudeyarova , Vladimir Viktorovich Nechaev , Ellin Petrovich Bochkarev , Nikolai Georgievich Voronin , Jury Anatolievich Drozdov
发明人： Grigory Borisovich Goldin , Valentin Petrovich Khlebnikov , Jury Vasilievich Jushkov , Vadim Nikolaevich Maslov , Oleg Evgenievich Korobov , Vladimir Petrovich Kuklev , Vladimir Grigorievich Demyanets , Ljudvig Alexandrovich Dolomanov , Emilia Stanislavovna Kudeyarova , Vladimir Viktorovich Nechaev , Ellin Petrovich Bochkarev , Nikolai Georgievich Voronin , Jury Anatolievich Drozdov
IPC分类号： C30B25/04 , C30B25/22 , C23C13/08
CPC分类号： C30B25/22 , C30B25/04
摘要： A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis.
摘要翻译：一种装置，其中反应容器填充有气体，并且其中第一和第二等同和同轴的盘被定位。它们具有分别携带形成半导体周期性结构的至少一个衬底和至少两个不同半导体物质的源的平行操作表面。基板加热器和源加热器分别放置在第一和第二盘附近。第一和第二电动机布置在反应容器的外部，以分别围绕容器垂直轴线旋转第一和第二盘，以及驱动器沿着轴线移动盘中的一个。

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