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1. 发明授权

US08396430B2 Semiconductor integrated circuit device and wireless communication system 有权
标题翻译：半导体集成电路器件和无线通信系统
公开(公告)号：US08396430B2
公开(公告)日：2013-03-12
申请号：US13114340
申请日：2011-05-24
申请人： Taizo Yamawaki , Tomonori Tanoue , Kazuaki Hori
发明人： Taizo Yamawaki , Tomonori Tanoue , Kazuaki Hori
IPC分类号： H04B1/44
CPC分类号： H04B1/006 , H04B1/52
摘要： Disclosed are a semiconductor integrated circuit device and a wireless communication system that are capable of improving reception sensitivity. The wireless communication system includes, for instance, a first duplexer, a second duplexer, a first low-noise amplifier circuit, and a second low-noise amplifier circuit. A transmission band compliant with a communication standard is split into two segments for use, namely, low- and high-frequency transmission bands. A reception band compliant with the communication standard is split into two segments for use, namely, low- and high-frequency reception bands. The first duplexer uses the low-frequency transmission band and low-frequency reception band as passbands. The second duplexer uses the high-frequency transmission band and high-frequency reception band as passbands. A signal received from the first duplexer and a signal received from the second duplexer are respectively amplified by the first and the second low-noise amplifier circuits, which are respectively provided to handle such signals.
摘要翻译：公开了能够提高接收灵敏度的半导体集成电路装置和无线通信系统。无线通信系统包括例如第一双工器，第二双工器，第一低噪声放大器电路和第二低噪声放大器电路。符合通信标准的传输频带被分成两个段，即低频和高频传输频带。符合通信标准的接收频段被分为两段供低频和高频接收频段使用。第一双工器使用低频传输频带和低频接收频带作为通带。第二双工器使用高频传输频带和高频接收频带作为通带。从第一双工器接收的信号和从第二双工器接收的信号分别由分别提供以处理这种信号的第一和第二低噪声放大器电路放大。

2. 发明授权

US07184491B2 Wireless communication apparatus 有权
标题翻译：无线通信装置
公开(公告)号：US07184491B2
公开(公告)日：2007-02-27
申请号：US10655045
申请日：2003-09-05
申请人： May Suzuki , Satoshi Tanaka , Taizo Yamawaki , Tomonori Tanoue
发明人： May Suzuki , Satoshi Tanaka , Taizo Yamawaki , Tomonori Tanoue
IPC分类号： H04K1/02
CPC分类号： H03F3/24 , H03F1/02 , H03F1/0205 , H03F1/0227 , H03F1/32 , H03F2200/102 , H03F2200/324 , H03F2200/451 , H03F2200/504 , H03F2200/66 , H04B2001/045 , H04L27/20
摘要： A linear system and an EER system are used in combination such that the EER system can also be used in a cellular phone with a wide output dynamic range. In the EER system, linear control of an amplifier becomes difficult in a low output range. Thus, use of the EER system is limited to a high output range, and the linear system is used in the low output range as in the past. A power efficiency is improved while requirements of linearity are satisfied by this structure. An effective circuit structure is proposed for a switching control system for two systems. In addition, an up-converter is constituted in combination with a step-down element with high responsiveness, whereby a power supply voltage control circuit for the EER system with a wide control range and high responsiveness is provided.
摘要翻译：线性系统和EER系统组合使用，使得EER系统也可以用在具有宽输出动态范围的蜂窝电话中。在EER系统中，放大器的线性控制在低输出范围内变得困难。因此，EER系统的使用被限制在高输出范围，并且线性系统如以往那样在低输出范围内使用。通过这种结构满足线性要求，提高了功率效率。提出了一种用于两个系统的开关控制系统的有效电路结构。此外，上变频器与具有高响应性的降压元件组合构成，由此提供了具有宽控制范围和高响应性的EER系统的电源电压控制电路。

3. 发明申请

US20120208476A1 HIGH FREQUENCY POWER AMPLIFIER, TRANSMITTER AND MOBILE COMMUNICATION TERMINAL USING THE POWER AMPLIFIER 有权
标题翻译：使用功率放大器的高频功率放大器，发射器和移动通信终端
公开(公告)号：US20120208476A1
公开(公告)日：2012-08-16
申请号：US13451850
申请日：2012-04-20
申请人： Tomonori Tanoue , Hidetoshi Matsumoto
发明人： Tomonori Tanoue , Hidetoshi Matsumoto
IPC分类号： H04B1/04 , H04B1/034
CPC分类号： H03G3/3042 , H03F1/0261 , H03F3/191 , H03F3/24 , H03F2200/105 , H03F2200/207 , H03F2200/294 , H03F2200/372 , H03F2200/471 , H03F2200/99
摘要： A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.
摘要翻译：无论负载阻抗的波动如何，高频功率放大器保持良好的线性度，并且小型化。高频功率放大器检测最终放大级晶体管的输出端的交流电压振幅，并且当电压振幅超过预定阈值时，抑制功率放大器的输入信号振幅。

4. 发明申请

US20070190962A1 RF MODULE AND MANUFACTURING THE SAME 有权
标题翻译： RF模块和制造它们
公开(公告)号：US20070190962A1
公开(公告)日：2007-08-16
申请号：US11618207
申请日：2006-12-29
申请人： Kenji Sasaki , Tomonori Tanoue , Sakae Kikuchi , Toshifumi Makino , Takeshi Sato , Tsutomu Kobori , Yasunari Umemoto , Takashi Kitahara
发明人： Kenji Sasaki , Tomonori Tanoue , Sakae Kikuchi , Toshifumi Makino , Takeshi Sato , Tsutomu Kobori , Yasunari Umemoto , Takashi Kitahara
IPC分类号： H04B1/06 , H04B1/28 , H04B7/00
CPC分类号： H04B1/28 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L25/18 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2224/78301 , H01L2224/85181 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01031 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： A technology is provided so that RF modules used for cellular phones etc. can be reduced in size. Over a wiring board constituting an RF module, there are provided a first semiconductor chip in which an amplifier circuit is formed and a second semiconductor chip in which a control circuit for controlling the amplifier circuit is formed. A bonding pad over the second semiconductor chip is connected with a bonding pad over the first semiconductor chip directly by a wire without using a relay pad. In this regard, the bonding pad formed over the first semiconductor chip is not square but rectangular (oblong).
摘要翻译：提供了一种技术，使得用于蜂窝电话等的RF模块的尺寸可以减小。在构成RF模块的布线板上，设置有形成放大器电路的第一半导体芯片和形成用于控制放大器电路的控制电路的第二半导体芯片。第二半导体芯片上的接合焊盘通过导线直接通过第一半导体芯片上的接合焊盘连接而不使用继电器垫。在这方面，形成在第一半导体芯片上的焊盘不是正方形，而是矩形（长方形）。

5. 发明申请

US20060081879A1 Semiconductor device and a manufacturing method thereof, and semiconductor module 失效
标题翻译：半导体装置及其制造方法以及半导体模块
公开(公告)号：US20060081879A1
公开(公告)日：2006-04-20
申请号：US11247234
申请日：2005-10-12
申请人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
发明人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
IPC分类号： H01L31/109
CPC分类号： H01L23/482 , H01L24/48 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.
摘要翻译：本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。在半导体器件中，开口形成在活性部件的正下方。这些开口填充有导体层。还形成了未形成开口的导体层。

6. 发明授权

US06943387B2 Semiconductor device, manufacturing thereof and power amplifier module 失效
标题翻译：半导体器件，其制造和功率放大器模块
公开(公告)号：US06943387B2
公开(公告)日：2005-09-13
申请号：US10409455
申请日：2003-04-09
申请人： Isao Ohbu , Tomonori Tanoue , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa , Kazuhiro Mochizuki , Masami Ohnishi , Hidetoshi Matsumoto
发明人： Isao Ohbu , Tomonori Tanoue , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa , Kazuhiro Mochizuki , Masami Ohnishi , Hidetoshi Matsumoto
IPC分类号： H01L21/331 , H01L29/06 , H01L29/423 , H01L29/737 , H03F1/30 , H03F3/19 , H01L31/072
CPC分类号： H01L29/66318 , H01L29/0692 , H01L29/42304 , H01L29/7371 , H01L2924/15153 , H01L2924/1517 , H01L2924/16152 , H03F1/302 , H03F3/19 , H03F2203/21178
摘要： In a semiconductor device using an emitter top heterojunction bipolar transistor having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. This allows reduction of base/collector junction capacitance per unit emitter area, whereby a semiconductor device having high power adding efficiency and high power gain suitable for a power amplifier can be realized. Further, in a multistage power amplifier including first and second amplifier circuits each having one or more of bipolar transistors, a bipolar transistor in the first amplifier circuit uses an emitter having a planar shape in a rectangular shape, and a bipolar transistor in the second amplifier circuit uses an emitter having a ring-like shape and a base electrode only on the inner side of the emitter.
摘要翻译：在使用具有环状形状的发射极顶面异质结双极晶体管的半导体器件中，提供了仅在环状发射极 - 基极结区域的内侧存在基极的结构。这允许减小每单位发射极面积的基极/集电极结电容，由此可以实现具有高功率增加效率和适用于功率放大器的高功率增益的半导体器件。此外，在包括具有一个或多个双极晶体管的第一和第二放大器电路的多级功率放大器中，第一放大器电路中的双极晶体管使用具有矩形形状的平面形状的发射极和第二放大器中的双极晶体管电路仅在发射体的内侧使用具有环状形状的发射体和基极。

7. 发明授权

US06881639B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06881639B2
公开(公告)日：2005-04-19
申请号：US10372774
申请日：2003-02-26
申请人： Kazuhiro Mochizuki , Kiyoshi Ouchi , Tomonori Tanoue
发明人： Kazuhiro Mochizuki , Kiyoshi Ouchi , Tomonori Tanoue
IPC分类号： H01L21/265 , H01L21/331 , H01L21/8222 , H01L21/8252 , H01L27/06 , H01L29/737 , H03F1/30 , H03F3/19
CPC分类号： H01L21/263 , H01L21/8252 , H01L27/0605 , H01L29/66318 , H01L29/7371 , H03F1/302 , H03F3/19
摘要： The present invention provides a method of manufacturing semiconductor devices, by which InGaAs-base C-top HBTs are manufactured at low cost. Helium ions with a smaller radius are implanted into a p-type InGaAs layer (in external base regions) not covered with a lamination consisting of an undoped InGaAs spacer layer, n-type InP collector layer, n-type InGaAs cap layer, and collector electrode from a direction vertical to the surface of the external base layer or within an angle of 3 degrees off the vertical. In consequence, the p-type InGaAs in the external base regions remains p-type conductive and low resistive and the n-type InAlAs layer in the external emitter regions can be made highly resistive. By this method, InGaAs-base C-top HBTs can be fabricated on a smaller chip at low cost without increase of the number of processes.
摘要翻译：本发明提供一种半导体器件的制造方法，以低成本制造InGaAs基C顶HBT。具有较小半径的氦离子注入未被不掺杂的InGaAs间隔层，n型InP集电极层，n型InGaAs覆盖层和集电体组成的叠层的p型InGaAs层（在外部基极区域中）电极从垂直于外部基底层的表面的方向延伸，或者垂直于3度的角度。因此，外部基极区域中的p型InGaAs保持p型导电和低电阻，并且外部发射极区域中的n型InAlAs层可以被制成高电阻性。通过这种方法，可以以较低的成本在较小的芯片上制造InGaAs基C顶HBT，而不增加工艺数量。

8. 发明授权

US06822517B2 Power amplifier module 有权
公开(公告)号：US06822517B2
公开(公告)日：2004-11-23
申请号：US10753484
申请日：2004-01-09
申请人： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
发明人： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
IPC分类号： H03F368
CPC分类号： H03F1/56 , H03F1/0222 , H03F1/0261 , H03F1/0266 , H03F1/301 , H03F1/302 , H03F1/306 , H03F3/19 , H03F3/1935 , H03F2200/318 , H03F2200/453
摘要： A power amplifier module comprises a plurality of amplifier stages, each including a reference amplifier for emulating the operation of the amplifier. The current flowing to the base of a bipolar transistor that forms each reference amplifier depending on an input power level is detected, amplified, and supplied as base current of the transistor of the corresponding amplifier.

9. 发明授权

US06775525B1 Radio communication apparatus and semiconductor device 失效
标题翻译：无线电通信装置和半导体装置
公开(公告)号：US06775525B1
公开(公告)日：2004-08-10
申请号：US09697210
申请日：2000-10-26
申请人： Tomonori Tanoue , Kiichi Yamashita
发明人： Tomonori Tanoue , Kiichi Yamashita
IPC分类号： H01Q1112
CPC分类号： H01L29/7371 , H01L2224/0603 , H01L2224/48227 , H01L2224/49111 , H01L2924/1305 , H01L2924/13091 , H01L2924/19105 , H01L2924/30111 , H03F1/0216 , H03F1/0261 , H03F3/191 , H03F3/68 , H03G1/0005 , H01L2924/00 , H01L2924/00012
摘要： A radio communication apparatus including at the transmitter-side output stage a high-frequency power amplifier module that has incorporated therein a single-stage amplifier using one multi-finger type heterojunction bipolar transistor (HBT) or a multi-stage amplifier using a plurality of HBTs sequentially connected in cascade, and at the output end an antenna connected to the high-frequency power amplifier module, wherein first capacitors and first resistors are inserted in series between the input terminal of the high-frequency power amplifier module and the control fingers of the HBT, and second resistors are inserted between the control terminal of the high-frequency power amplifier module and the control fingers of the HBT and connected to the nodes of the first resistors and the first capacitors.
摘要翻译：一种无线电通信装置，包括在发射机侧输出级的高频功率放大器模块，其中结合有使用一个多指型异质结双极晶体管（HBT）的单级放大器或使用多 HBT顺序地级联连接，在输出端连接到高频功率放大器模块的天线，其中第一电容器和第一电阻串联插入高频功率放大器模块的输入端和控制指 HBT和第二电阻器插入在高频功率放大器模块的控制端子和HBT的控制指头之间，并连接到第一电阻器和第一电容器的节点。

10. 发明授权

US5598015A Hetero-junction bipolar transistor and semiconductor devices using the same 失效
标题翻译：异质结双极晶体管和使用其的半导体器件
公开(公告)号：US5598015A
公开(公告)日：1997-01-28
申请号：US357342
申请日：1994-12-15
申请人： Tomonori Tanoue , Hiroshi Masuda , Tohru Nakamura , Takahiro Onai , Katsuyoshi Washio
发明人： Tomonori Tanoue , Hiroshi Masuda , Tohru Nakamura , Takahiro Onai , Katsuyoshi Washio
IPC分类号： H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737 , H01L31/0328 , H01L27/082 , H01L31/0336
CPC分类号： H01L29/66318 , H01L29/7371
摘要： A hetero-junction bipolar transistor having an emitter composed of a semiconductor having a wider forbidden band width than that of a semiconductor constituting a base is disclosed. In the transistor, the emitter and the electrode leader area composed of a single crystalline semiconductor are provided being extended from the upper part of the emitter to the surface of the base through an insulating layer, for the purpose of making it possible to miniaturize the transistor and to operate the transistor at a high-speed by decreasing the emitter resistance.
摘要翻译：公开了一种异质结双极晶体管，其具有由具有比构成基极的半导体宽的禁带宽度的半导体构成的发射极。在晶体管中，由单晶半导体构成的发射极和电极引出区域通过绝缘层从发射极的上部延伸到基底的表面，以便使晶体管小型化并通过降低发射极电阻来高速运行晶体管。

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