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1. 发明授权

US07449722B2 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US07449722B2
公开(公告)日：2008-11-11
申请号：US11285388
申请日：2005-11-23
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai , Takashi Furuya
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai , Takashi Furuya
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/02 , H01L33/04 , H01L33/32
摘要： A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.
摘要翻译：半导体发光元件具有形成在第一导电型半导体基板上的第一导电型包覆层，未掺杂的有源层，第二导电型覆盖层和第二导电型电流扩展层。第二导电型包覆层具有形成在第二导电型包覆层的一部分上的第一掺杂剂抑制层，该部分不与有源层接触。第一掺杂剂抑制层的掺杂剂浓度低于第一掺杂剂抑制层附近的区域。

2. 发明申请

US20070023768A1 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US20070023768A1
公开(公告)日：2007-02-01
申请号：US11285388
申请日：2005-11-23
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai , Takashi Furuya
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai , Takashi Furuya
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/02 , H01L33/04 , H01L33/32
摘要： A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.
摘要翻译：半导体发光元件具有形成在第一导电型半导体基板上的第一导电型包覆层，未掺杂的有源层，第二导电型覆盖层和第二导电型电流扩展层。第二导电型包覆层具有形成在第二导电型包覆层的一部分上的第一掺杂剂抑制层，该部分不与有源层接触。第一掺杂剂抑制层的掺杂剂浓度低于第一掺杂剂抑制层附近的区域。

3. 发明授权

US07368759B2 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US07368759B2
公开(公告)日：2008-05-06
申请号：US11485420
申请日：2006-07-13
申请人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka , Katsuya Akimoto
发明人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka , Katsuya Akimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/30
摘要： A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.
摘要翻译：半导体发光器件具有形成在半导体衬底上的发光部分，形成在其上的As型p型接触层，在其上形成金属氧化物材料的电流扩散层，以及形成在p型接触层之间的缓冲层，型包覆层和p型接触层。缓冲层具有p型导电性的III / V族半导体，有意或不可避免地含有氢或碳，缓冲层的厚度等于或大于掺杂到p型导电体中的掺杂剂的扩散长度L，型接触层。

4. 发明申请

US20070075319A1 Semiconductor light-emitting device with transparent conductive film 失效
标题翻译：具有透明导电膜的半导体发光器件
公开(公告)号：US20070075319A1
公开(公告)日：2007-04-05
申请号：US11485316
申请日：2006-07-13
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02546 , H01L33/02 , H01L33/025
摘要： A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film made of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer. The buffer layer has two or more buffer layer parts, and the adjacent buffer layer parts are different each other in material or composition.
摘要翻译：具有透明导电膜的半导体发光器件具有形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的基于As的接触层，所述接触层掺杂有1×10 19 / cm 3以上的p型掺杂物; 形成在所述接触层上的电流扩展层，所述电流扩散层由由金属氧化物材料制成的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间的缓冲层。缓冲层具有两个以上的缓冲层部分，相邻的缓冲层部分在材料或组成上彼此不同。

5. 发明授权

US07569866B2 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US07569866B2
公开(公告)日：2009-08-04
申请号：US11497379
申请日：2006-08-02
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/30
摘要： A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer or formed being inserted inside of the p-type clad layer. The buffer layer is of an undoped group III/V semiconductor, and the group III/V semiconductor is of a group V element having P (phosphorus) as a main component thereof.
摘要翻译：一种半导体发光器件，具有：形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的As基接触层，所述接触层掺杂有1×1019 / cm3以上的p型掺杂剂; 形成在所述接触层上的电流扩展层，所述电流扩散层由金属氧化物材料的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间或形成为插入所述p型覆盖层内部的缓冲层。缓冲层为未掺杂的III / V族III族半导体，III / V族半导体为具有P（磷）作为主要成分的V族元素。

6. 发明申请

US20060220032A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20060220032A1
公开(公告)日：2006-10-05
申请号：US11165568
申请日：2005-06-24
申请人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka
发明人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/14 , H01L33/30
摘要： A semiconductor light emitting device has: a semiconductor substrate; a semiconductor layer having an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer is made of an As-based material and located at the top of the semiconductor layer and doped with a p-type dopant at a concentration of 1×1019/cm3 or more; a current spreading layer formed on the semiconductor layer and made of a metal oxide material; and a diffusion prevention layer formed between the p-type contact layer and the p-type cladding layer. The diffusion prevention layer is made of a group III-V semiconductor that has phosphorus as a group V element and has a crystal lattice mismatch ratio of within ±0.3% to the semiconductor substrate.
摘要翻译：半导体发光器件具有：半导体衬底; 具有n型包覆层，有源层，p型覆层和p型接触层的半导体层，其中p型接触层由基于As的材料制成，位于半导体层并掺杂浓度为1×10 9 / cm 3以上的p型掺杂剂; 形成在半导体层上并由金属氧化物材料制成的电流扩展层; 以及形成在p型接触层和p型覆层之间的扩散防止层。扩散防止层由具有磷作为V族元素并且具有与半导体衬底的±0.3％以内的晶格失配比的III-V族半导体制成。

7. 发明申请

US20080093612A1 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US20080093612A1
公开(公告)日：2008-04-24
申请号：US11907976
申请日：2007-10-19
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/405
摘要： A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.
摘要翻译：在半导体发光器件中形成包括有源层6和光提取层4的多个半导体层以及反射金属膜11。光提取层4由具有不同组成比的多个层23,24形成。在包括最外层的层23,24上形成凹凸22，以提供作为粗糙表面的主表面S.

8. 发明申请

US20070075328A1 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US20070075328A1
公开(公告)日：2007-04-05
申请号：US11511220
申请日：2006-08-29
申请人： Kazuyuki Iizuka , Taichiroo Konno , Masahiro Arai
发明人： Kazuyuki Iizuka , Taichiroo Konno , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/025 , H01L33/30 , H01L33/42
摘要： A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a Mg concentration of 3.0×1017/cm3 or less and a film thickness of 50 nm or more.
摘要翻译：半导体发光器件具有半导体衬底，n型覆层，有源层，p型覆层，p型缓冲层，p型接触层和电流扩展层。一部分或全部p型缓冲层具有Mg浓度为3.0×10 17 / cm 3以下的低Mg浓度缓冲层，膜厚为 50nm以上。

9. 发明申请

US20070075327A1 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US20070075327A1
公开(公告)日：2007-04-05
申请号：US11485420
申请日：2006-07-13
申请人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka , Katsuya Akimoto
发明人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka , Katsuya Akimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/30
摘要： A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.
摘要翻译：半导体发光器件具有形成在半导体衬底上的发光部分，形成在其上的As型p型接触层，在其上形成金属氧化物材料的电流扩散层，以及形成在p型接触层之间的缓冲层，型包覆层和p型接触层。缓冲层具有p型导电性的III / V族半导体，有意或不可避免地含有氢或碳，缓冲层的厚度等于或大于掺杂到p型导电体中的掺杂剂的扩散长度L，型接触层。

10. 发明授权

US07692203B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07692203B2
公开(公告)日：2010-04-06
申请号：US11907976
申请日：2007-10-19
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/405
摘要： A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.
摘要翻译：在半导体发光器件中形成包括有源层6和光提取层4的多个半导体层以及反射金属膜11。光提取层4由具有不同组成比的多个层23,24形成。在包括最外层的层23,24上形成凹凸22，以提供作为粗糙表面的主表面S.

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