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    • 3. 发明授权
    • Semiconductor light-emitting device
    • 半导体发光装置
    • US07569866B2
    • 2009-08-04
    • US11497379
    • 2006-08-02
    • Taichiroo KonnoKazuyuki IizukaMasahiro Arai
    • Taichiroo KonnoKazuyuki IizukaMasahiro Arai
    • H01L33/00
    • H01L33/14H01L33/30
    • A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer or formed being inserted inside of the p-type clad layer. The buffer layer is of an undoped group III/V semiconductor, and the group III/V semiconductor is of a group V element having P (phosphorus) as a main component thereof.
    • 一种半导体发光器件,具有:形成在半导体衬底上的发光部分,所述发光部分具有n型覆盖层,有源层和p型覆盖层; 形成在发光部分上的As基接触层,所述接触层掺杂有1×1019 / cm3以上的p型掺杂剂; 形成在所述接触层上的电流扩展层,所述电流扩散层由金属氧化物材料的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间或形成为插入所述p型覆盖层内部的缓冲层。 缓冲层为未掺杂的III / V族III族半导体,III / V族半导体为具有P(磷)作为主要成分的V族元素。
    • 5. 发明申请
    • Semiconductor light emitting device
    • 半导体发光器件
    • US20060220032A1
    • 2006-10-05
    • US11165568
    • 2005-06-24
    • Masahiro AraiTaichiroo KonnoKazuyuki Iizuka
    • Masahiro AraiTaichiroo KonnoKazuyuki Iizuka
    • H01L33/00
    • H01L33/02H01L33/14H01L33/30
    • A semiconductor light emitting device has: a semiconductor substrate; a semiconductor layer having an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer is made of an As-based material and located at the top of the semiconductor layer and doped with a p-type dopant at a concentration of 1×1019/cm3 or more; a current spreading layer formed on the semiconductor layer and made of a metal oxide material; and a diffusion prevention layer formed between the p-type contact layer and the p-type cladding layer. The diffusion prevention layer is made of a group III-V semiconductor that has phosphorus as a group V element and has a crystal lattice mismatch ratio of within ±0.3% to the semiconductor substrate.
    • 半导体发光器件具有:半导体衬底; 具有n型包覆层,有源层,p型覆层和p型接触层的半导体层,其中p型接触层由基于As的材料制成,位于 半导体层并掺杂浓度为1×10 9 / cm 3以上的p型掺杂剂; 形成在半导体层上并由金属氧化物材料制成的电流扩展层; 以及形成在p型接触层和p型覆层之间的扩散防止层。 扩散防止层由具有磷作为V族元素并且具有与半导体衬底的±0.3%以内的晶格失配比的III-V族半导体制成。