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1. 发明申请

US20080007171A1 Electroluminescent device 审中-公开
标题翻译：电致发光器件
公开(公告)号：US20080007171A1
公开(公告)日：2008-01-10
申请号：US11730720
申请日：2007-04-03
申请人： Tae-Won Jeong , Shang-Hyeun Park , Jeong-Na Heo , Jeong-Hee Lee , Jong-Min Kim , Jin-Pyo Hong , Yong-Wan Jin , Byong-Gwon Song
发明人： Tae-Won Jeong , Shang-Hyeun Park , Jeong-Na Heo , Jeong-Hee Lee , Jong-Min Kim , Jin-Pyo Hong , Yong-Wan Jin , Byong-Gwon Song
IPC分类号： H01J63/04
CPC分类号： H05B33/10 , H05B33/24 , H05B33/26 , H05B33/28
摘要： An electroluminescent device uses nano structures having a wide surface area. The electroluminescent device includes a substrate, a first electrode having a plurality of nano structures formed on an upper surface of the substrate, a dielectric layer formed so as to correspond to the shape of the nano structures, a light emitting layer formed so as to correspond to the shape of the dielectric layer, and a second electrode covering the light emitting layer. A surface of the second electrode facing the light emitting layer is separated by a predetermined distance from a surface of the nano structures.
摘要翻译：电致发光器件使用具有宽表面积的纳米结构。电致发光器件包括衬底，具有形成在衬底的上表面上的多个纳米结构的第一电极，形成为对应于纳米结构的形状的电介质层，形成为对应于发光层的发光层到电介质层的形状，以及覆盖发光层的第二电极。面向发光层的第二电极的表面与纳米结构的表面隔开预定的距离。

2. 发明申请

US20070164653A1 Field emission type backlight unit and method of manufacturing upper panel thereof 审中-公开
标题翻译：场发射型背光单元及其制造方法
公开(公告)号：US20070164653A1
公开(公告)日：2007-07-19
申请号：US11509622
申请日：2006-08-25
申请人： Byong-Gwon Song , Shang-Hyeun Park , Yong-Wan Jin , Sun-Il Kim , Tae-Won Jeong
发明人： Byong-Gwon Song , Shang-Hyeun Park , Yong-Wan Jin , Sun-Il Kim , Tae-Won Jeong
IPC分类号： H01J63/04 , H01J1/62 , B05D5/12
CPC分类号： H01J63/06 , B82Y10/00 , H01J2201/30469
摘要： A method of manufacturing an upper panel of a field emission type backlight unit. The method includes: sequentially forming an anode electrode and a phosphor layer on a substrate; forming a metal reflection film on the phosphor layer; and annealing a surface of the metal reflection film. The method can increase brightness of an image, can prevent occurrence of an electric arc when a high driving voltage is applied to the backlight unit, and allows removal of residues produced when manufacturing the backlight unit.
摘要翻译：一种制造场致发射型背光单元的上面板的方法。该方法包括：在基板上依次形成阳极电极和荧光体层; 在荧光体层上形成金属反射膜; 并退火金属反射膜的表面。该方法可以增加图像的亮度，当向背光单元施加高驱动电压时可以防止发生电弧，并且允许去除制造背光单元时产生的残留物。

3. 发明授权

US07942714B2 Method of manufacturing field emission device 有权
标题翻译：场致发射装置的制造方法
公开(公告)号：US07942714B2
公开(公告)日：2011-05-17
申请号：US11790657
申请日：2007-04-26
申请人： Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
发明人： Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
IPC分类号： H01J9/02 , H01J1/304
CPC分类号： H01J63/02 , H01J9/025 , H01J2201/30469 , H01J2329/0455
摘要： A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.
摘要翻译：场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

4. 发明申请

US20080108271A1 Method of manufacturing field emission device 有权
标题翻译：场致发射装置的制造方法
公开(公告)号：US20080108271A1
公开(公告)日：2008-05-08
申请号：US11790657
申请日：2007-04-26
申请人： Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
发明人： Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
IPC分类号： H01J9/02
CPC分类号： H01J63/02 , H01J9/025 , H01J2201/30469 , H01J2329/0455
摘要： A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.
摘要翻译：场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

5. 发明申请

US20080084156A1 Anode panel and field emission device (FED) including the anode panel 审中-公开
标题翻译：阳极面板和场发射器件（FED）包括阳极面板
公开(公告)号：US20080084156A1
公开(公告)日：2008-04-10
申请号：US11826357
申请日：2007-07-13
申请人： Jun-Hee Choi , Sun-Il Kim , Shang-Hyeun Park , Andrei Zoulkarneev , Deuk-Seok Chung , Byong-Gwon Song , Ho-Suk Kang , Chan-Wook Baik
发明人： Jun-Hee Choi , Sun-Il Kim , Shang-Hyeun Park , Andrei Zoulkarneev , Deuk-Seok Chung , Byong-Gwon Song , Ho-Suk Kang , Chan-Wook Baik
IPC分类号： H01J1/62
CPC分类号： H01J1/74 , H01J1/70 , H01J31/127 , H01J2329/28
摘要： An anode panel for a Field Emission Device (FED) includes a substrate, an anode electrode arranged on a lower surface of the substrate, a black matrix arranged on a lower surface of the anode electrode and having a plurality of openings with respect to one pixel, phosphor layers having predetermined colors to cover the plurality of openings corresponding to each pixel and the black matrix between the plurality of openings, and a reflection layer arranged on lower surfaces of the phosphor layers.
摘要翻译：用于场发射装置（FED）的阳极面板包括衬底，布置在衬底的下表面上的阳极电极，布置在阳极电极的下表面上并且具有相对于一个像素的多个开口的黑矩阵具有预定颜色的荧光体层，以覆盖对应于每个像素的多个开口和多个开口之间的黑矩阵，以及布置在荧光体层的下表面上的反射层。

6. 发明申请

US20060158094A1 Field emission display (FED) 审中-公开
标题翻译：场发射显示（FED）
公开(公告)号：US20060158094A1
公开(公告)日：2006-07-20
申请号：US11274194
申请日：2005-11-16
申请人： Jung-Woo Kim , Byong-Gwon Song , Jeong-Na Heo
发明人： Jung-Woo Kim , Byong-Gwon Song , Jeong-Na Heo
IPC分类号： H01J63/04
CPC分类号： H01J31/127 , G09G3/22
摘要： A Field Emission Display (FED) using an electromagnetic field includes: a lower substrate and an upper substrate, spaced apart from each other and facing each other; cathode electrodes arranged on the lower substrate; gate electrodes arranged between the cathode electrodes; an anode electrode arranged on the upper substrate; a phosphor layer arranged on the anode electrode; and a gate driving circuit adapted to supply a current to the gate electrode to form an electromagnetic field around the gate electrode.
摘要翻译：使用电磁场的场发射显示器（FED）包括：彼此间隔开并彼此面对的下基板和上基板; 设置在下基板上的阴极电极; 布置在阴极电极之间的栅电极; 布置在上基板上的阳极电极; 布置在所述阳极电极上的荧光体层; 以及栅极驱动电路，其适于向栅电极提供电流以在栅电极周围形成电磁场。

7. 发明申请

US20070138525A1 Mechanical memory device and method of manufacturing the same 失效
标题翻译：机械记忆装置及其制造方法
公开(公告)号：US20070138525A1
公开(公告)日：2007-06-21
申请号：US11606966
申请日：2006-12-01
申请人： Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
发明人： Jae-Eun Jang , Seung-Nam Cha , Byong-Gwon Song , Yong-Wan Jin
IPC分类号： H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： G11C13/025 , B82Y10/00 , G11C23/00 , H01L27/10805 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/86 , Y10S977/724 , Y10S977/725
摘要： A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a source electrode, a drain electrode, and a gate electrode, each of which is formed on an insulating substrate. A nanowire capacitor is formed on the source electrode. The nanowire capacitor includes a first nanowire vertically grown from the source electrode, a dielectric layer formed on the outer surface of the first nanowire, and a floating electrode formed on the outer surface of the dielectric layer. A second nanowire is vertically grown on the drain electrode. The drain electrode is arranged between the source electrode and the gate electrode. The second nanowire is elastically deformed and contacts the nanowire capacitor when a drain voltage is applied to the drain electrode, and polarity of the drain voltage is opposite to polarity of a source voltage that is applied to the source electrode. Information is stored in the memory device in a form of a charged or non-charged state of the nanowire capacitor. Reading and writing operation of the memory device is performed by the mechanical movement of the second nanowire.
摘要翻译：提供了使用纳米线的机械移动执行写入和读取操作的存储器件，以及制造存储器件的方法。存储器件包括源电极，漏电极和栅电极，它们都形成在绝缘衬底上。在源电极上形成纳米线电容器。纳米线电容器包括从源极垂直生长的第一纳米线，形成在第一纳米线的外表面上的电介质层和形成在电介质层的外表面上的浮动电极。在漏电极上垂直生长第二纳米线。漏极布置在源电极和栅电极之间。当向漏电极施加漏极电压时，第二纳米线弹性变形并与纳米线电容器接触，并且漏极电压的极性与施加到源电极的源极电压的极性相反。信息以纳米线电容器的充电或非充电状态的形式存储在存储器件中。通过第二纳米线的机械运动来进行记忆装置的读写操作。

8. 发明授权

US07714496B2 Field emission display device and field emission type backlight device having a sealing structure for vacuum exhaust 失效
标题翻译：具有真空排气密封结构的场发射显示装置和场发射型背光装置
公开(公告)号：US07714496B2
公开(公告)日：2010-05-11
申请号：US11655153
申请日：2007-01-19
申请人： Kyong-Won Min , Byong-Gwon Song , Yong-Wan Jin , Deuk-Seok Chung , Moon-Jin Shin
发明人： Kyong-Won Min , Byong-Gwon Song , Yong-Wan Jin , Deuk-Seok Chung , Moon-Jin Shin
IPC分类号： H01J1/62
CPC分类号： H01J9/385 , H01J31/127 , H01J2329/941
摘要： A field emission display device and a field emission type backlight device having a sealing structure for a vacuum exhaust are provided. The field emission display device is constructed with a cathode substrate and an anode substrate attached to each other and facing each other and a vacuum-exhausted panel space formed therebetween to generated a visual image. Also, the field emission display device is constructed with a sealing member disposed along edges of the cathode substrate and the anode substrate to seal the panel space. At least one inlet exposed to the panel space and an exhaust passage through which the inlet communicates with an outside of the field emission display device are formed in the sealing member. The field emission display device and the field emission type backlight device according to the present invention has a reduced number of manufacturing processes and is suitable for a compact, slim and lightweight design, and a large screen by having the sealing structure for the vacuum exhaust.
摘要翻译：提供了一种具有真空排气密封结构的场发射显示装置和场发射型背光装置。场致发射显示装置由阴极基板和阳极基板构成，彼此相邻并且彼此面对，并且在其间形成真空排空的面板空间以产生视觉图像。此外，场致发射显示装置构造有沿着阴极基板和阳极基板的边缘设置的密封构件，以密封面板空间。在密封构件中形成有至少一个暴露于面板空间的入口和入口与场致发射显示装置的外部连通的排气通道。根据本发明的场致发射显示装置和场发射型背光装置的制造工艺数量减少，并且适合于紧凑，纤薄和轻便的设计，并且通过具有用于真空排气的密封结构的大屏幕。

9. 发明授权

US08053846B2 Field effect transistor (FET) having nano tube and method of manufacturing the FET 有权
标题翻译：具有纳米管的场效应晶体管（FET）及其制造方法
公开(公告)号：US08053846B2
公开(公告)日：2011-11-08
申请号：US11826170
申请日：2007-07-12
申请人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
发明人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
IPC分类号： H01L27/088
CPC分类号： H01L29/42372 , H01L21/2652 , H01L21/2807 , H01L21/28114 , H01L29/42376 , H01L29/4238 , H01L29/49 , H01L29/515 , H01L29/6659
摘要： A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.
摘要翻译：晶体管包括：半导体衬底; 布置在所述半导体衬底上的沟道区; 分别布置在通道区域的任一侧上的源极和漏极; 以及布置在半导体衬底上以横向源极和漏极之间的沟道区域的导电纳米管栅极。其制造方法包括：在半导体衬底的表面上布置导电纳米管; 限定具有预定尺寸并穿过纳米管的源区和漏区; 在源极和漏极区域上形成金属层; 去除形成在纳米管上的金属层的一部分，以分别形成与纳米管的任一侧上的金属层分离的源极和漏极; 以及通过离子注入在排列在源极和漏极之间的纳米管下方的沟道区域掺杂。

10. 发明申请

US20080150043A1 Field Effect Transistor (FET) having nano tube and method of manufacturing the FET 有权
标题翻译：具有纳米管的场效应晶体管（FET）和制造FET的方法
公开(公告)号：US20080150043A1
公开(公告)日：2008-06-26
申请号：US11826170
申请日：2007-07-12
申请人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
发明人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/42372 , H01L21/2652 , H01L21/2807 , H01L21/28114 , H01L29/42376 , H01L29/4238 , H01L29/49 , H01L29/515 , H01L29/6659
摘要： A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.
摘要翻译：晶体管包括：半导体衬底; 布置在所述半导体衬底上的沟道区; 分别布置在通道区域的任一侧上的源极和漏极; 以及布置在半导体衬底上以横向源极和漏极之间的沟道区域的导电纳米管栅极。其制造方法包括：在半导体衬底的表面上布置导电纳米管; 限定具有预定尺寸并穿过纳米管的源区和漏区; 在源极和漏极区域上形成金属层; 去除形成在纳米管上的金属层的一部分，以分别形成与纳米管的任一侧上的金属层分离的源极和漏极; 以及通过离子注入在排列在源极和漏极之间的纳米管下方的沟道区域掺杂。

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