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1. 发明申请

US20080084156A1 Anode panel and field emission device (FED) including the anode panel 审中-公开
标题翻译：阳极面板和场发射器件（FED）包括阳极面板
公开(公告)号：US20080084156A1
公开(公告)日：2008-04-10
申请号：US11826357
申请日：2007-07-13
申请人： Jun-Hee Choi , Sun-Il Kim , Shang-Hyeun Park , Andrei Zoulkarneev , Deuk-Seok Chung , Byong-Gwon Song , Ho-Suk Kang , Chan-Wook Baik
发明人： Jun-Hee Choi , Sun-Il Kim , Shang-Hyeun Park , Andrei Zoulkarneev , Deuk-Seok Chung , Byong-Gwon Song , Ho-Suk Kang , Chan-Wook Baik
IPC分类号： H01J1/62
CPC分类号： H01J1/74 , H01J1/70 , H01J31/127 , H01J2329/28
摘要： An anode panel for a Field Emission Device (FED) includes a substrate, an anode electrode arranged on a lower surface of the substrate, a black matrix arranged on a lower surface of the anode electrode and having a plurality of openings with respect to one pixel, phosphor layers having predetermined colors to cover the plurality of openings corresponding to each pixel and the black matrix between the plurality of openings, and a reflection layer arranged on lower surfaces of the phosphor layers.
摘要翻译：用于场发射装置（FED）的阳极面板包括衬底，布置在衬底的下表面上的阳极电极，布置在阳极电极的下表面上并且具有相对于一个像素的多个开口的黑矩阵具有预定颜色的荧光体层，以覆盖对应于每个像素的多个开口和多个开口之间的黑矩阵，以及布置在荧光体层的下表面上的反射层。

2. 发明申请

US20080108271A1 Method of manufacturing field emission device 有权
标题翻译：场致发射装置的制造方法
公开(公告)号：US20080108271A1
公开(公告)日：2008-05-08
申请号：US11790657
申请日：2007-04-26
申请人： Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
发明人： Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
IPC分类号： H01J9/02
CPC分类号： H01J63/02 , H01J9/025 , H01J2201/30469 , H01J2329/0455
摘要： A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.
摘要翻译：场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

3. 发明授权

US07942714B2 Method of manufacturing field emission device 有权
标题翻译：场致发射装置的制造方法
公开(公告)号：US07942714B2
公开(公告)日：2011-05-17
申请号：US11790657
申请日：2007-04-26
申请人： Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
发明人： Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
IPC分类号： H01J9/02 , H01J1/304
CPC分类号： H01J63/02 , H01J9/025 , H01J2201/30469 , H01J2329/0455
摘要： A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.
摘要翻译：场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

4. 发明申请

US20070152554A1 Illuminating device 审中-公开
标题翻译：照明装置
公开(公告)号：US20070152554A1
公开(公告)日：2007-07-05
申请号：US11580062
申请日：2006-10-13
申请人： Sun-Il Kim , Deuk-Seok Chung , Byong-gwon Song , Shang-Hyeun Park , Moon-Jin Shin
发明人： Sun-Il Kim , Deuk-Seok Chung , Byong-gwon Song , Shang-Hyeun Park , Moon-Jin Shin
IPC分类号： H01J19/02 , H01J1/62
CPC分类号： H01J63/02 , G02F1/133602 , H01J61/35 , H01J63/06
摘要： An illuminating device includes: an upper substrate and a lower substrate facing each other and spaced apart from each other; an anode electrode arranged on a lower surface of the upper substrate; a phosphor layer arranged on a lower surface of the anode electrode; a cathode electrode arranged on an upper surface of the lower substrate; an electron emission source arranged on the cathode electrode; and a reflection film arranged between the electron emission source and the phosphor layer and respectively separated therefrom, the reflection film being patterned on a surface facing the phosphor layer to diffuse light emitted from the phosphor layer. The illuminating device provides improved brightness uniformity by forming a pattern on the reflection film so that light can be uniformly diffused or dispersed.
摘要翻译：照明装置包括：上基板和下基板，彼此面对并且彼此间隔开; 阳极，布置在上基板的下表面上; 布置在所述阳极电极的下表面上的荧光体层; 阴极电极，设置在下基板的上表面上; 设置在阴极上的电子发射源; 以及反射膜，其布置在电子发射源和荧光体层之间并分别与其分离，反射膜在面向荧光体层的表面上被图案化以扩散从荧光体层发射的光。照明装置通过在反射膜上形成图案使得可以均匀地扩散或分散光而提供改善的亮度均匀性。

5. 发明申请

US20070164653A1 Field emission type backlight unit and method of manufacturing upper panel thereof 审中-公开
标题翻译：场发射型背光单元及其制造方法
公开(公告)号：US20070164653A1
公开(公告)日：2007-07-19
申请号：US11509622
申请日：2006-08-25
申请人： Byong-Gwon Song , Shang-Hyeun Park , Yong-Wan Jin , Sun-Il Kim , Tae-Won Jeong
发明人： Byong-Gwon Song , Shang-Hyeun Park , Yong-Wan Jin , Sun-Il Kim , Tae-Won Jeong
IPC分类号： H01J63/04 , H01J1/62 , B05D5/12
CPC分类号： H01J63/06 , B82Y10/00 , H01J2201/30469
摘要： A method of manufacturing an upper panel of a field emission type backlight unit. The method includes: sequentially forming an anode electrode and a phosphor layer on a substrate; forming a metal reflection film on the phosphor layer; and annealing a surface of the metal reflection film. The method can increase brightness of an image, can prevent occurrence of an electric arc when a high driving voltage is applied to the backlight unit, and allows removal of residues produced when manufacturing the backlight unit.
摘要翻译：一种制造场致发射型背光单元的上面板的方法。该方法包括：在基板上依次形成阳极电极和荧光体层; 在荧光体层上形成金属反射膜; 并退火金属反射膜的表面。该方法可以增加图像的亮度，当向背光单元施加高驱动电压时可以防止发生电弧，并且允许去除制造背光单元时产生的残留物。

6. 发明授权

US08183097B2 Thin-film transistor substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08183097B2
公开(公告)日：2012-05-22
申请号：US12186659
申请日：2008-08-06
申请人： Sang-Ki Kwak , Hyang-Shik Kong , Sun-Il Kim
发明人： Sang-Ki Kwak , Hyang-Shik Kong , Sun-Il Kim
IPC分类号： H01L27/88
CPC分类号： H01L27/1288 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A thin-film transistor (TFT) substrate includes a semiconductor pattern, a conductive pattern, a first wiring pattern, an insulation pattern and a second wiring pattern. The semiconductor pattern is formed on a substrate. The conductive pattern is formed as a layer identical to the semiconductor pattern on the substrate. The first wiring pattern is formed on the semiconductor pattern. The first wiring pattern includes a source electrode and a drain electrode spaced apart from the source electrode. The insulation pattern is formed on the substrate having the first wiring pattern to cover the first wiring pattern. The second wiring pattern is formed on the insulation pattern. The second wiring pattern includes a gate electrode formed on the source and drain electrodes. Therefore, a TFT substrate is manufactured using two or three masks, so that manufacturing costs may be decreased.
摘要翻译：薄膜晶体管（TFT）衬底包括半导体图案，导电图案，第一布线图案，绝缘图案和第二布线图案。半导体图案形成在基板上。导电图案形成为与衬底上的半导体图案相同的层。第一布线图案形成在半导体图案上。第一布线图案包括与源电极间隔开的源电极和漏电极。在具有第一布线图案的基板上形成绝缘图案以覆盖第一布线图案。第二布线图案形成在绝缘图案上。第二布线图案包括形成在源极和漏极上的栅电极。因此，使用两个或三个掩模制造TFT基板，从而可以降低制造成本。

7. 发明申请

US20090057745A1 Inverted nonvolatile memory device, stack module, and method of fabricating the same 失效
标题翻译：反相非易失性存储器件，堆叠模块及其制造方法
公开(公告)号：US20090057745A1
公开(公告)日：2009-03-05
申请号：US12073398
申请日：2008-03-05
申请人： Huaxiang Yin , Young-soo Park , Sun-Il Kim
发明人： Huaxiang Yin , Young-soo Park , Sun-Il Kim
IPC分类号： H01L29/788 , H01L29/792 , H01L21/335
CPC分类号： H01L27/115 , H01L21/84 , H01L27/11521 , H01L27/1203
摘要： Example embodiments provide a nonvolatile memory device that may be integrated through stacking, a stack module, and a method of fabricating the nonvolatile memory device. In the nonvolatile memory device according to example embodiments, at least one bottom gate electrode may be formed on a substrate. At least one charge storage layer may be formed on the at least one bottom gate electrode, and at least one semiconductor channel layer may be formed on the at least one charge storage layer.
摘要翻译：示例性实施例提供了可以通过堆叠集成的非易失性存储器件，堆叠模块和制造非易失性存储器件的方法。在根据示例性实施例的非易失性存储器件中，可以在衬底上形成至少一个底栅电极。至少一个电荷存储层可以形成在至少一个底栅电极上，并且至少一个半导体沟道层可以形成在至少一个电荷存储层上。

8. 发明授权

US07910920B2 Thin film transistor and method of forming the same 有权
公开(公告)号：US07910920B2
公开(公告)日：2011-03-22
申请号：US12005395
申请日：2007-12-27
申请人： Jae-chul Park , Young-soo Park , Sun-Il Kim
发明人： Jae-chul Park , Young-soo Park , Sun-Il Kim
IPC分类号： H01L29/08 , H01L51/00 , H01L29/10 , H01L29/12 , H01L21/00 , H01L21/84
CPC分类号： H01L29/7869 , H01L29/78609
摘要： A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on the channel layer. The protective layer may be under the source electrode and the drain electrode and/or may cover the channel layer. The gate electrode may be configured to apply an electric field to the channel layer. The gate insulating layer may be interposed between the gate electrode and the channel layer.

9. 发明授权

US07105443B2 Method for fabricating epitaxial cobalt-disilicide layers using cobalt-nitride thin film 失效
标题翻译：使用氮化钴薄膜制造外延二硫化钴层的方法
公开(公告)号：US07105443B2
公开(公告)日：2006-09-12
申请号：US11008671
申请日：2004-12-10
申请人： Byung-Tae Ahn , Sun-Il Kim , Seung-Ryul Lee , Jong-Ho Park
发明人： Byung-Tae Ahn , Sun-Il Kim , Seung-Ryul Lee , Jong-Ho Park
IPC分类号： H01L21/44
CPC分类号： H01L29/665 , H01L21/28518
摘要： A method for fabricating epitaxial cobalt disilicide layers uses a cobalt-nitride thin film. Epitaxial cobalt disilicide (CoSi2) layers are fabricated using a cobalt-nitride thin film in a salicide process, wherein a silicide is formed on source/drain regions and a polysilicon gate electrode of a nanoscale MOS transistor. Epitaxial CoSi2 layers can be fabricated on source/drain regions and a gate electrode of a silicon substrate using a cobalt-nitride thin film, without the formation of an interlayer between a cobalt layer and the silicon substrate.
摘要翻译：用于制造外延二硫化钴层的方法使用氮化钴薄膜。在硅化物工艺中使用氮化钴薄膜制造外延二硅化钴（CoSi 2 N）层，其中硅化物形成在纳米级MOS晶体管的源极/漏极区域和多晶硅栅极电极上。可以在源极/漏极区域和使用氮化钴薄膜的硅衬底的栅电极上制造外延CoSi 2层，而不在钴层和硅衬底之间形成中间层。

10. 发明申请

US20050130417A1 Method for fabricating epitaxial cobalt-disilicide layers using cobalt-nitride thin film 失效
标题翻译：使用氮化钴薄膜制造外延二硫化钴层的方法
公开(公告)号：US20050130417A1
公开(公告)日：2005-06-16
申请号：US11008671
申请日：2004-12-10
申请人： Byung-Tae Ahn , Sun-Il Kim , Seung-Ryul Lee , Jong-Ho Park
发明人： Byung-Tae Ahn , Sun-Il Kim , Seung-Ryul Lee , Jong-Ho Park
IPC分类号： H01L21/24 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/44 , H01L21/4763
CPC分类号： H01L29/665 , H01L21/28518
摘要： A method for fabricating epitaxial cobalt disilicide layers uses a cobalt-nitride thin film. Epitaxial cobalt disilicide (CoSi2) layers are fabricated using a cobalt-nitride thin film in a salicide process, wherein a silicide is formed on source/drain regions and a polysilicon gate electrode of a nanoscale MOS transistor. Epitaxial CoSi2 layers can be fabricated on source/drain regions and a gate electrode of a silicon substrate using a cobalt-nitride thin film, without the formation of an interlayer between a cobalt layer and the silicon substrate.
摘要翻译：用于制造外延二硫化钴层的方法使用氮化钴薄膜。在硅化物工艺中使用氮化钴薄膜制造外延二硅化钴（CoSi 2 N）层，其中硅化物形成在纳米级MOS晶体管的源极/漏极区域和多晶硅栅极电极上。可以在源极/漏极区域和使用氮化钴薄膜的硅衬底的栅电极上制造外延CoSi 2层，而不在钴层和硅衬底之间形成中间层。

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