专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07310140B2 Method and apparatus for inspecting a wafer surface 有权
标题翻译：检查晶片表面的方法和装置
公开(公告)号：US07310140B2
公开(公告)日：2007-12-18
申请号：US10877684
申请日：2004-06-25
申请人： Tae-Min Eom , Yu-Sin Yang , Chung-Sam Jun , Yun-Jung Jee , Joung-Soo Kim , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi
发明人： Tae-Min Eom , Yu-Sin Yang , Chung-Sam Jun , Yun-Jung Jee , Joung-Soo Kim , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/47 , G01N21/55 , G01N2021/556
摘要： In a method and an apparatus for inspecting a wafer surface, a wafer is loaded into a chamber. An incident light including a first light for sensing a vertical position of the wafer and a second light for inspecting the wafer surface is irradiated onto the wafer. The first light is reflected on an inspection region or a next inspection region of the wafer and is detected to control a wafer position. The second light is scattered on the inspection region and is detected to inspect the wafer surface of the inspection region. Position information of a wafer is examined and a position of the wafer is adjusted before inspecting a surface of inspection region of a wafer so as to enable accurate inspection of the wafer surface.
摘要翻译：在用于检查晶片表面的方法和装置中，将晶片装入室中。将包括用于感测晶片的垂直位置的第一光和用于检查晶片表面的第二光的入射光照射到晶片上。第一光被反射在晶片的检查区域或下一个检查区域上，并被检测以控制晶片位置。第二光被分散在检查区域上，并被检测以检查检查区域的晶片表面。在检查晶片的检查区域的表面之前检查晶片的位置信息并调整晶片的位置，以便能够精确地检查晶片表面。

2. 发明授权

US07271890B2 Method and apparatus for inspecting defects 失效
标题翻译：检查缺陷的方法和装置
公开(公告)号：US07271890B2
公开(公告)日：2007-09-18
申请号：US10903852
申请日：2004-07-30
申请人： Joung-Soo Kim , Yu-Sin Yang , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
发明人： Joung-Soo Kim , Yu-Sin Yang , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/55
摘要： In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.
摘要翻译：在根据本发明的一个方面的用于检查缺陷的方法中，对象被分成多个区域。获得多个区域中的每一个的反射率。使用反射率确定每个区域的放大率。光照射到这些区域上。从第一区域反射的光被第一区域确定的第一放大率放大。检测到将照射的光从第一区域移动到第二区域。从第二区域反射的光被第二区域确定的第二放大率放大。分析来自第一区域和第二区域的放大的光以确定物体上存在缺陷。

3. 发明申请

US20050094137A1 Method and apparatus for inspecting defects 失效
标题翻译：检查缺陷的方法和装置
公开(公告)号：US20050094137A1
公开(公告)日：2005-05-05
申请号：US10903852
申请日：2004-07-30
申请人： Joung-Soo Kim , Yu-Sin Yang , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
发明人： Joung-Soo Kim , Yu-Sin Yang , Moon-Kyung Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
IPC分类号： H01L21/66 , G01N21/00 , G01N21/55 , G01N21/95
CPC分类号： G01N21/9501 , G01N21/55
摘要： In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.
摘要翻译：在根据本发明的一个方面的用于检查缺陷的方法中，对象被分成多个区域。获得多个区域中的每一个的反射率。使用反射率确定每个区域的放大率。光照射到这些区域上。从第一区域反射的光被第一区域确定的第一放大率放大。检测到将照射的光从第一区域移动到第二区域。从第二区域反射的光被第二区域确定的第二放大率放大。分析来自第一区域和第二区域的放大的光以确定物体上存在缺陷。

4. 发明授权

US06869215B2 Method and apparatus for detecting contaminants in ion-implanted wafer 失效
标题翻译：用于检测离子注入晶片中的污染物的方法和装置
公开(公告)号：US06869215B2
公开(公告)日：2005-03-22
申请号：US10447104
申请日：2003-05-29
申请人： Yu-Sin Yang , Sang-Mun Chon , Sun-Yong Choi , Chung Sam Jun , Kwan-Woo Ryu , Park-Song Kim , Tae-Min Eom
发明人： Yu-Sin Yang , Sang-Mun Chon , Sun-Yong Choi , Chung Sam Jun , Kwan-Woo Ryu , Park-Song Kim , Tae-Min Eom
IPC分类号： H01L21/66 , G01N25/72 , G01K11/00
CPC分类号： G01N25/72
摘要： A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.
摘要翻译：一种用于通过加热或充电或两者退火和激活离子注入晶片并测量从活化晶片产生的热波吸收来检测离子注入晶片中的污染物的方法和装置。

5. 发明授权

US06927077B2 Method and apparatus for measuring contamination of a semiconductor substrate 失效
标题翻译：用于测量半导体衬底的污染物的方法和装置
公开(公告)号：US06927077B2
公开(公告)日：2005-08-09
申请号：US10704753
申请日：2003-11-12
申请人： Tae-Min Eom , Yu-Sin Yang , Kwan-Woo Ryu , Park-Song Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
发明人： Tae-Min Eom , Yu-Sin Yang , Kwan-Woo Ryu , Park-Song Kim , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
IPC分类号： H01L21/66 , G01R31/303 , G01R31/311 , H01L21/00 , G01N21/00 , G01R31/302
CPC分类号： G01R31/303 , G01R31/311
摘要： An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.
摘要翻译：一种用于测量半导体衬底的污染的装置，包括用于装载衬底的卡盘，位置检测装置，用于识别所加载的衬底的前表面，以获得要测量的衬底的一部分的位置数据，用于移动的第一驱动部件所述卡盘根据位置数据来测量所述基板的后部;以及表面测量装置，设置在所述卡盘下方，用于选择性地测量所述基板的后部处的所述基板的金属污染。在操作中，将基板装载到卡盘上，通过识别形成在基板上的图案来获得要测量的基板的一部分的位置数据，然后根据位置数据移动基板，以测量基板的后部衬底和金属污染物在衬底的后部被选择性地测量。

6. 发明授权

US07113274B2 Method and apparatus for inspecting a substrate 有权
标题翻译：用于检查基板的方法和装置
公开(公告)号：US07113274B2
公开(公告)日：2006-09-26
申请号：US10777922
申请日：2004-02-11
申请人： Yu-Sin Yang , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
发明人： Yu-Sin Yang , Sang-Mun Chon , Sun-Yong Choi , Chung-Sam Jun
IPC分类号： G01N21/00
CPC分类号： G01N21/4738 , G01N21/94 , G01N21/9501 , G01N21/956
摘要： In a method and an apparatus for inspecting defects on a substrate using a light beam, a light source irradiates light beams having different wavelengths onto the substrate. A detector detects first lights scattered from a surface of the substrate and second lights scattered from impurities on the substrate by irradiation of the light beams. An operation unit compares first intensities of the first lights with second intensities of the second lights in order to produce differential values therebetween, and selects a wavelength corresponding to a maximum value of the differential values. An inspection process for inspecting the defects on the substrate is performed using a light beam having the selected wavelength.
摘要翻译：在使用光束检查基板上的缺陷的方法和装置中，光源将具有不同波长的光束照射到基板上。检测器通过照射光束来检测从基板的表面散射的第一光和从基板上的杂质散射的第二光。操作单元将第一光的第一强度与第二光的第二强度进行比较，以便在其间产生微分值，并选择与差分值的最大值对应的波长。使用具有所选择的波长的光进行用于检查基板上的缺陷的检查处理。

7. 发明授权

US07573568B2 Method and apparatus for detecting a photolithography processing error, and method and apparatus for monitoring a photolithography process 有权
标题翻译：用于检测光刻处理误差的方法和装置，以及用于监测光刻工艺的方法和装置
公开(公告)号：US07573568B2
公开(公告)日：2009-08-11
申请号：US10909238
申请日：2004-07-30
申请人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
发明人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： G01N21/00
CPC分类号： G03F7/70608 , G03F7/70616
摘要： An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.
摘要翻译：用于监测光刻工艺的装置包括测量器和数据处理器。测量器测量衬底的光学特性。数据处理器基于光学测量器来确定衬底的缺陷。

8. 发明申请

US20050026054A1 Method and apparatus for detecting a photolithography processing error, and method and apparatus for monitoring a photolithography process 有权
标题翻译：用于检测光刻处理误差的方法和装置，以及用于监测光刻工艺的方法和装置
公开(公告)号：US20050026054A1
公开(公告)日：2005-02-03
申请号：US10909238
申请日：2004-07-30
申请人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
发明人： Yu-Sin Yang , Chung-Sam Jun , Sang-Mun Chon , Sun-Yong Choi
IPC分类号： H01L21/027 , G03F7/00 , G03F7/20
CPC分类号： G03F7/70608 , G03F7/70616
摘要： An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.
摘要翻译：用于监测光刻工艺的装置包括测量器和数据处理器。测量器测量衬底的光学特性。数据处理器基于光学测量器来确定衬底的缺陷。

9. 发明授权

US07186577B2 Method for monitoring a density profile of impurities 有权
标题翻译：监测杂质浓度分布的方法
公开(公告)号：US07186577B2
公开(公告)日：2007-03-06
申请号：US10787772
申请日：2004-02-27
申请人： Yun-Jung Jee , Sun-Yong Choi , Chung-Sam Jun , Kwan-Woo Ryu
发明人： Yun-Jung Jee , Sun-Yong Choi , Chung-Sam Jun , Kwan-Woo Ryu
IPC分类号： H01L21/66
CPC分类号： G01N21/9501
摘要： A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.
摘要翻译：一种监测杂质浓度分布的方法，该方法包括：预先设置涂覆在基材上的薄层的监测位置，从监测位置监测的杂质的浓度分布沿薄层厚度方向移动，移动曝光器用于将薄层的局部区域暴露于监测位置，使薄层的局部区域沿着薄层的厚度方向暴露，形成薄层暴露局部区域的形状轮廓，并监测密度通过根据形状轮廓确定杂质的密度来描述杂质，及其装置。可以监测杂质浓度分布，而不会破坏其上涂覆有薄层的基底，并且可以实时监测和控制用于形成薄层的杂质的量。

10. 发明申请

US20050134867A1 Systems and methods for measuring distance of semiconductor patterns 有权
标题翻译：测量半导体图形距离的系统和方法
公开(公告)号：US20050134867A1
公开(公告)日：2005-06-23
申请号：US11012005
申请日：2004-12-13
申请人： Koung-Su Shin , Kwang-Jun Yoon , Sun-Yong Choi , Chung-Sam Jun , Dong-Jin Park
发明人： Koung-Su Shin , Kwang-Jun Yoon , Sun-Yong Choi , Chung-Sam Jun , Dong-Jin Park
IPC分类号： H01L21/66 , G03F7/20 , G01B11/14
CPC分类号： G03F7/70616
摘要： A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.
摘要翻译：提供了测量半导体图形的距离的系统和方法。该系统包括显微镜和控制单元。控制单元计算包括斑点，相对于标准点的点的点坐标，来自两个标准坐标和点坐标的点的实际坐标的视场中的标准点的标准坐标，以及最后两个点之间的距离第一个和第二个实际坐标。使用高倍率，结合像素计数确定坐标，允许更精确的距离测量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式