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1. 发明授权

US09186135B2 Medical suture having micro cogs on surface and method of manufacturing the same 有权
标题翻译：具有表面微小齿的医用缝线及其制造方法
公开(公告)号：US09186135B2
公开(公告)日：2015-11-17
申请号：US13580627
申请日：2011-08-29
申请人： Tae Jun Kim , Byung Gwan Kim , Daesung Song
发明人： Tae Jun Kim , Byung Gwan Kim , Daesung Song
IPC分类号： A61B17/04 , A61B17/06 , A61L17/14 , D02J3/00 , A61B17/00
CPC分类号： A61B17/06166 , A61B2017/00526 , A61B2017/00831 , A61B2017/06176 , A61L17/14 , D02J3/00
摘要： Provided are a medical suture having micro cogs on a surface thereof and a method of manufacturing the medical suture. The method of manufacturing a medical suture includes steps of: producing a suture preform where micro cogs are formed on a surface thereof by heating and pressing a raw material of a suture for surgery in an overflow mould in a heat-press solid-phase forming method; and producing a suture with twist maintained by applying a tensile force and a rotational force to the suture preform in a vacuum state where a specific temperature condition is maintained.
摘要翻译：本发明提供一种在其表面上具有微型齿的医用缝合线以及制造医用缝合线的方法。制造医用缝合线的方法包括以下步骤：通过在热压固相形成方法中在溢流模具中加热和压制用于外科手术的缝合线的原材料来生产在其表面上形成微型齿的缝合线预制件 ; 并且在保持特定温度条件的真空状态下，通过向缝合线预成型件施加张力和旋转力来生产具有扭曲的缝合线。

2. 发明申请

US20130072971A1 MEDICAL SUTURE HAVING MICRO COGS ON SURFACE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有微观表面的医疗用具及其制造方法
公开(公告)号：US20130072971A1
公开(公告)日：2013-03-21
申请号：US13580627
申请日：2011-08-29
申请人： Tae Jun Kim , Byung Gwan Kim , Daesung Song
发明人： Tae Jun Kim , Byung Gwan Kim , Daesung Song
IPC分类号： A61B17/06
CPC分类号： A61B17/06166 , A61B2017/00526 , A61B2017/00831 , A61B2017/06176 , A61L17/14 , D02J3/00
摘要： Provided are a medical suture having micro cogs on a surface thereof and a method of manufacturing the medical suture. The method of manufacturing a medical suture includes steps of: producing a suture preform where micro cogs are formed on a surface thereof by heating and pressing a raw material of a suture for surgery in an overflow mould in a heat-press solid-phase forming method; and producing a suture with twist maintained by applying a tensile force and a rotational force to the suture preform in a vacuum state where a specific temperature condition is maintained.
摘要翻译：本发明提供一种在其表面上具有微型齿的医用缝合线以及制造医用缝合线的方法。制造医用缝合线的方法包括以下步骤：通过在热压固相形成方法中在溢流模具中加热和压制用于外科手术的缝合线的原材料来生产在其表面上形成微型齿的缝合线预制件 ; 并且在保持特定温度条件的真空状态下，通过向缝合线预成型件施加张力和旋转力来生产具有扭曲的缝合线。

3. 发明授权

US08682374B2 Mobile terminal and controlling method thereof 有权
标题翻译：移动终端及其控制方法
公开(公告)号：US08682374B2
公开(公告)日：2014-03-25
申请号：US12816204
申请日：2010-06-15
申请人： Tae Jun Kim , Jong Keun Youn
发明人： Tae Jun Kim , Jong Keun Youn
IPC分类号： H04B7/00
CPC分类号： H04M1/271 , H04M1/2745 , H04M2250/74
摘要： A mobile terminal and controlling method thereof are disclosed. According to the present invention, when audio information including recorded voice of a correspondent party is displayed on a screen of a mobile terminal, contact information matching the audio information of the correspondent party stored in the mobile terminal is searched and displayed on the screen. Therefore, a user is able to directly contact the correspondent party having recorded the audio information within the screen.
摘要翻译：公开了一种移动终端及其控制方法。根据本发明，当在移动终端的屏幕上显示包括记录方的记录声音的音频信息时，搜索和显示与存储在移动终端中的通信对方的音频信息相匹配的联系信息。因此，用户能够直接联系在屏幕内记录了音频信息的对方。

4. 发明授权

US5461024A Thiophenesulfonylurea derivatives 失效
标题翻译：噻吩磺酰脲衍生物
公开(公告)号：US5461024A
公开(公告)日：1995-10-24
申请号：US117011
申请日：1993-12-09
申请人： Dae-Whang Kim , Dong Ju Jeon , Sang Soon Park , Jae Chun Woo , Tae Jun Kim
发明人： Dae-Whang Kim , Dong Ju Jeon , Sang Soon Park , Jae Chun Woo , Tae Jun Kim
IPC分类号： A01N47/28 , A01N47/36 , C07D409/12 , C07D491/048 , C07D491/052 , C07D521/00 , A01N43/66 , C07D409/14
CPC分类号： C07D521/00 , A01N47/36
摘要： A novel thiophenesulfonylurea derivative having herbicidal activity, having the formula (I): ##STR1## wherein the substituents are herein described.
摘要翻译： PCT No.PCT / KR92 / 00009 Sec。 371日期1993年12月9日第 102（e）日期1993年12月9日PCT提交1992年3月14日PCT公布。出版物WO92 / 16525 具有式（I）的具有除草活性的新的噻吩磺酰基脲衍生物：描述。

5. 发明申请

US20080105889A1 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080105889A1
公开(公告)日：2008-05-08
申请号：US11976791
申请日：2007-10-29
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

6. 发明授权

US08623692B2 Method for manufacturing solar cell including etching 有权
标题翻译：包括蚀刻的太阳能电池的制造方法
公开(公告)号：US08623692B2
公开(公告)日：2014-01-07
申请号：US13276044
申请日：2011-10-18
申请人： Myung Su Kim , Min Chul Song , Soon Young Park , Dong Seop Kim , Sung Chan Park , Yoon Mook Kang , Tae Jun Kim , Min Ki Shin , Sang Won Lee , Heung Kyoon Lim
发明人： Myung Su Kim , Min Chul Song , Soon Young Park , Dong Seop Kim , Sung Chan Park , Yoon Mook Kang , Tae Jun Kim , Min Ki Shin , Sang Won Lee , Heung Kyoon Lim
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.
摘要翻译：提出了一种制造太阳能电池的方法。该方法包括：在光吸收层的第一表面上形成非晶硅层; 用掺杂剂掺杂非晶硅层; 通过用激光将掺杂剂扩散到非晶硅层中形成掺杂剂层; 通过去除保留在掺杂剂层外部的掺杂剂形成半导体层; 通过使用蚀刻剂蚀刻半导体层的表面; 在所述半导体层上形成第一电极; 以及在所述光吸收层的第二表面上形成第二电极。

7. 发明授权

US08124997B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08124997B2
公开(公告)日：2012-02-28
申请号：US12756528
申请日：2010-04-08
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L31/0232
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

8. 发明授权

US07906785B2 Vertical type nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：垂直型氮化物半导体发光器件及其制造方法
公开(公告)号：US07906785B2
公开(公告)日：2011-03-15
申请号：US11585212
申请日：2006-10-24
申请人： Doo Go Baik , Bang Won Oh , Tae Jun Kim
发明人： Doo Go Baik , Bang Won Oh , Tae Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/0033 , H01L33/32
摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.
摘要翻译：提供了一种垂直氮化物半导体发光器件及其制造方法。在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积。高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

9. 发明授权

US07727787B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07727787B2
公开(公告)日：2010-06-01
申请号：US11976791
申请日：2007-10-29
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L21/304
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

10. 发明申请

US20070145391A1 Vertical type nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：垂直型氮化物半导体发光器件及其制造方法
公开(公告)号：US20070145391A1
公开(公告)日：2007-06-28
申请号：US11585212
申请日：2006-10-24
申请人： Doo Go Baik , Bang Won Oh , Tae Jun Kim
发明人： Doo Go Baik , Bang Won Oh , Tae Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/0033 , H01L33/32
摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.
摘要翻译：提供了一种垂直氮化物半导体发光器件及其制造方法。在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积。高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

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