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1. 发明授权

US06935553B2 Reflow soldering method 有权
标题翻译：回流焊接方法
公开(公告)号：US06935553B2
公开(公告)日：2005-08-30
申请号：US10413564
申请日：2003-04-15
申请人： Tadatomo Suga , Keisuke Saito , Yoshikazu Matsuura , Tatsuya Takeuchi , Johji Kagami , Rikiya Kato , Sakie Yamagata
发明人： Tadatomo Suga , Keisuke Saito , Yoshikazu Matsuura , Tatsuya Takeuchi , Johji Kagami , Rikiya Kato , Sakie Yamagata
IPC分类号： B23K1/008 , B23K1/20 , H05K3/34 , B23K31/02 , B23K31/00 , B23K35/36
CPC分类号： H05K3/3489 , B23K1/008 , B23K1/206 , H05K2203/043 , H05K2203/087
摘要： A soldering method includes exposing a solder paste including a solder powder and a flux on a member to a free radical gas and heating the solder paste to reflow the solder paste and vaporize any active components in the solder paste. Any flux residue is free of active components, so it is not necessary to perform cleaning after soldering to remove flux residue.
摘要翻译：焊接方法包括将包含焊料粉末和助熔剂的焊膏暴露在自由基气体上并加热焊膏以回流焊膏并汽化焊膏中的任何有源成分。任何助焊剂残留物都不含活性组分，所以在焊接后不需要进行清洗以除去助焊剂残留物。

2. 发明申请

US20070170227A1 Soldering method 审中-公开
标题翻译：焊接方法
公开(公告)号：US20070170227A1
公开(公告)日：2007-07-26
申请号：US10588868
申请日：2005-02-16
申请人： Yasuhide Ohno , Takashi Nakamori , Makoto Suenaga , Tatsuya Takeuchi , Johji Kagami , Taizo Hagihara
发明人： Yasuhide Ohno , Takashi Nakamori , Makoto Suenaga , Tatsuya Takeuchi , Johji Kagami , Taizo Hagihara
IPC分类号： A47J36/02
CPC分类号： B23K3/087 , B23K1/008 , B23K35/26 , B23K2101/42 , C22C13/00 , H05K3/3463 , H05K3/3489
摘要： An object of the invention is to provide a high-quality soldering method, by reducing, to a vacuum, the pressure in a vacuum room (2) in which a workpiece (10) having solid solder placed thereon consisting solely of tin or including tin and one or more components selected from silver, lead, copper, bismuth, indium and zinc is disposed. A free-radical gas is generated to remove an oxide film on the solder, and, after that, the generation of the free-radical gas is stopped, and the temperature of the solder is raised to a temperature above the melting point of the solder to melt the solder in the non-oxidizing atmosphere.
摘要翻译：本发明的目的是提供一种高品质的焊接方法，通过将真空室（2）中的固体焊料的工件（10）仅由锡或包括锡构成的真空室减压到真空并且配置选自银，铅，铜，铋，铟和锌中的一种或多种成分。产生自由基气体以除去焊料上的氧化物膜，然后停止自由基气体的产生，并且焊料的温度升高到高于焊料熔点的温度以在非氧化性气氛中熔化焊料。

3. 发明授权

US07539385B2 Optical semiconductor device and fabrication process thereof 有权
标题翻译：光半导体器件及其制造工艺
公开(公告)号：US07539385B2
公开(公告)日：2009-05-26
申请号：US11979136
申请日：2007-10-31
申请人： Ayahito Uetake , Tatsuya Takeuchi
发明人： Ayahito Uetake , Tatsuya Takeuchi
IPC分类号： G02B6/10
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/026 , H01S5/1085 , H01S5/16 , H01S5/2201 , H01S5/2224 , H01S5/2275 , H01S5/3211 , H01S5/34306 , H01S5/34373 , H01S5/50 , H01S2304/04
摘要： An optical semiconductor, includes a semiconductor substrate having a (100) principal surface, a waveguide mesa stripe formed on a first region of the semiconductor substrate, the waveguide mesa stripe guiding a light therethrough; a plurality of dummy mesa patterns formed on the semiconductor substrate in a second region at a forward side of the first region, and a semi-insulating buried semiconductor layer formed on the semiconductor substrate so as to cover the first and second regions continuously, the semi-insulating buried semiconductor layer filling a right side and a left side of the waveguide mesa stripe in the first region and a gap between the plurality of dummy mesa patterns in the second region.
摘要翻译：光学半导体包括具有（100）主表面的半导体衬底，形成在所述半导体衬底的第一区域上的波导台面条，所述波导台面条引导光通过; 在第一区域的前侧的第二区域中形成在半导体衬底上的多个虚拟台面图案，以及形成在半导体衬底上以半导体衬底连续覆盖第一和第二区域的半绝缘掩埋半导体层，半 - 绝缘半导体层，其填充所述第一区域中的所述波导台面条的右侧和左侧以及所述第二区域中的所述多个虚拟台面图案之间的间隙。

4. 发明授权

US08318585B2 Bonding method and bonding apparatus 有权
标题翻译：接合方法和接合装置
公开(公告)号：US08318585B2
公开(公告)日：2012-11-27
申请号：US12990608
申请日：2009-04-30
申请人： Yasuhide Ohno , Keisuke Taniguchi , Tatsuya Takeuchi , Taizo Hagihara
发明人： Yasuhide Ohno , Keisuke Taniguchi , Tatsuya Takeuchi , Taizo Hagihara
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H05K3/3489 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L24/83 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/29109 , H01L2224/75 , H01L2224/751 , H01L2224/7525 , H01L2224/757 , H01L2224/8101 , H01L2224/81011 , H01L2224/81022 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83801 , H01L2224/83894 , H01L2924/00011 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1579 , H01L2924/3025 , H05K3/3436 , H05K2201/10674 , H05K2203/1163 , H01L2924/0132 , H01L2924/00014 , H01L2224/83205
摘要： To facilitate bonding of articles at a low temperature without degrading electrical contact between the articles.An oxide film reducing treatment with hydrogen radicals is carried out for surfaces of lead-out electrodes (5) and bump electrodes (6) on the lead-out electrodes (5) of a semiconductor chip (2) and surfaces of lead-out electrodes (8) of an intermediate substrate (3), and, after that, the bump electrodes (6) of the semiconductor chip (2) and the lead-out electrodes (8) of the intermediate substrate (3) are aligned with each other. After that, a pressure is applied to bond the bump electrodes (6) and the lead-out electrodes (8).
摘要翻译：为了便于物品在低温下的粘合而不降低物品之间的电接触。对半导体芯片（2）的引出电极（5）的引出电极（5）和凸点电极（6）的表面进行氢自由基的氧化膜还原处理，以及引出电极（3）的所述半导体芯片（2）的凸起电极（6）和所述中间基板（3）的引出电极（8）彼此对准。之后施加压力以接合凸起电极（6）和引出电极（8）。

5. 发明申请

US20080175549A1 Optical semiconductor device and fabrication process thereof 有权
标题翻译：光半导体器件及其制造工艺
公开(公告)号：US20080175549A1
公开(公告)日：2008-07-24
申请号：US11979136
申请日：2007-10-31
申请人： Ayahito Uetake , Tatsuya Takeuchi
发明人： Ayahito Uetake , Tatsuya Takeuchi
IPC分类号： H01S5/227 , H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/026 , H01S5/1085 , H01S5/16 , H01S5/2201 , H01S5/2224 , H01S5/2275 , H01S5/3211 , H01S5/34306 , H01S5/34373 , H01S5/50 , H01S2304/04
摘要： An optical semiconductor, includes a semiconductor substrate having a (100) principal surface, a waveguide mesa stripe formed on a first region of the semiconductor substrate, the waveguide mesa stripe guiding a light therethrough; a plurality of dummy mesa patterns formed on the semiconductor substrate in a second region at a forward side of the first region, and a semi-insulating buried semiconductor layer formed on the semiconductor substrate so as to cover the first and second regions continuously, the semi-insulating buried semiconductor layer filling a right side and a left side of the waveguide mesa stripe in the first region and a gap between the plurality of dummy mesa patterns in the second region.
摘要翻译：光学半导体包括具有（100）主表面的半导体衬底，形成在所述半导体衬底的第一区域上的波导台面条，所述波导台面条引导光通过; 在第一区域的前侧的第二区域中形成在半导体衬底上的多个虚拟台面图案，以及形成在半导体衬底上以半导体衬底连续覆盖第一和第二区域的半绝缘掩埋半导体层，半 - 绝缘半导体层，其填充所述第一区域中的所述波导台面条的右侧和左侧以及所述第二区域中的所述多个虚拟台面图案之间的间隙。

6. 发明授权

US07088662B2 Optical disc drive and method for controlling the same 失效
标题翻译：光盘驱动器及其控制方法
公开(公告)号：US07088662B2
公开(公告)日：2006-08-08
申请号：US10488370
申请日：2003-08-01
申请人： Tetsuya Shihara , Tatsuya Takeuchi , Kenji Fujiune
发明人： Tetsuya Shihara , Tatsuya Takeuchi , Kenji Fujiune
IPC分类号： G11B7/007
CPC分类号： G11B7/0901 , G11B7/0045 , G11B7/005
摘要： An optical disc drive according to the present invention can read and write data from/on an optical disc 100 including record tracks to write data thereon and guide tracks for guiding a light beam 40. The drive includes: an optical pickup 101 with a converging optical system to focus the light beam 40 and form a spot thereof on the optical disc 100 for reading or writing the data; a tracking control section for controlling the converging optical system of the optical pickup 101 such that the light beam spot 40 follows a selected track on the optical disc 100 rotating; and a control unit 35 for operating the tracking control section in a first mode or in a second mode. In the first mode, the tracking control section makes the light beam spot 40 follow the recording tracks. In the second mode, the tracking control section makes the light beam spot 40 follow the guide tracks.
摘要翻译：根据本发明的光盘驱动器可以从包括记录轨道的光盘100上的数据读取数据，以便在其上写入数据，以及用于引导光束40的引导轨道。驱动器包括：具有会聚光学系统的光学拾取器101，用于聚焦光束40并在光盘100上形成一个点，用于读取或写入数据; 跟踪控制部分，用于控制光学拾取器101的会聚光学系统，使得光束光点40跟随旋转的光盘100上的选定轨道; 以及用于以第一模式或第二模式操作跟踪控制部的控制单元35。在第一模式中，跟踪控制部分使光束点40跟随记录轨道。在第二模式中，跟踪控制部分使光束点40跟随导轨。

7. 发明授权

US5755539A Shaping machine capable of suppressing tilt 失效
标题翻译：整形机能够抑制倾斜
公开(公告)号：US5755539A
公开(公告)日：1998-05-26
申请号：US710157
申请日：1996-09-12
申请人： Tatsuya Takeuchi , Noritaka Ise , Tomoji Honda , Toshio Kira , Tetsuaki Hiura
发明人： Tatsuya Takeuchi , Noritaka Ise , Tomoji Honda , Toshio Kira , Tetsuaki Hiura
IPC分类号： B23D37/10 , B23D41/08
CPC分类号： B23D37/10 , Y10T409/4056 , Y10T409/406475 , Y10T409/407
摘要： A shaping machine wherein either a work or a tool is a rod-like member extending along a straight center line while the other is a member having a hole capable of being fitted on the rod-like member and wherein the work is shaped while the member having the hole passes through the rod-like member from one end toward the other end of the rod-like member. The shaping machine comprises a feed mechanism for causing relative movement of the rod-like member and the member having the hole to each other along the center line of the rod-like member, a center line of the feed mechanism being coincident with the center line of the rod-like member.
摘要翻译：一种成型机，其中工件或工具是沿着直线中心线延伸的杆状构件，而另一个是具有能够安装在杆状构件上的孔的构件，并且其中工件成形，而构件所述孔从所述杆状构件的一端朝向另一端穿过所述杆状构件。成型机包括：进给机构，用于使杆状构件和具有孔的构件沿杆状构件的中心线相对移动，进给机构的中心线与中心线重合的棒状成员。

8. 发明授权

US08798110B2 Optical semiconductor device and method of manufacturing optical semiconductor device 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US08798110B2
公开(公告)日：2014-08-05
申请号：US13094117
申请日：2011-04-26
申请人： Tatsuya Takeuchi , Taro Hasegawa
发明人： Tatsuya Takeuchi , Taro Hasegawa
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01S5/2227 , H01S5/2275 , H01S5/3013
摘要： A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.
摘要翻译：一种制造光半导体器件的方法，包括：在第一导电型半导体衬底上形成包括第一导电型包覆层，有源层和第二导电型包覆层的台面结构，台面的最上表面结构由第二导电型包层的上表面构成; 生长的第一个埋藏层在比活性层更高的位置掩埋台面结构的两侧; 通过蚀刻第二导电型包覆层的上表面的两个边缘来形成凹陷面; 以及在所述第二导电型包覆层和所述第一掩埋层的凹面上生长所述第一导电类型的第二掩埋层。

9. 发明申请

US20130108240A1 DISC REPRODUCTION APPARATUS, DISC REPRODUCTION METHOD AND PROGRAM 审中-公开
标题翻译：光盘复制设备，光盘复制方法和程序
公开(公告)号：US20130108240A1
公开(公告)日：2013-05-02
申请号：US13808361
申请日：2012-02-29
申请人： Yoshinori Hiramatsu , Tatsuya Takeuchi , Koichi Tasaki
发明人： Yoshinori Hiramatsu , Tatsuya Takeuchi , Koichi Tasaki
IPC分类号： H04N9/80
CPC分类号： H04N9/80 , G11B19/02 , G11B19/047 , G11B20/10 , G11B27/105 , G11B27/11 , G11B27/36 , G11B2020/10972 , G11B2220/2541 , H04N5/85 , H04N9/8042 , H04N9/8205 , H04N21/42646 , H04N21/4325 , H04N21/8455
摘要： A reproduction control unit starts to monitor a reproduction state of a title being reproduced by a reproduction unit. If a specific navigation command added to the title being reproduced is executed, the reproduction state at a timing of the execution of this command is stored into a local storage. Moreover, the reproduction control unit determines whether or not the title being reproduced by the reproduction unit is an HDMV movie title, and in the case of the HDMV movie title, the reproduction control unit stores its reproduction state into the local storage. Resume reproduction depending on a reproduction target title is performed based on the reproduction state associated with the execution of the above specific navigation command and register information on the HDMV movie title.
摘要翻译：再现控制单元开始监视由再现单元再现的标题的再现状态。如果执行添加到正在再现的标题中的特定导航命令，则在执行该命令的定时处的再现状态被存储到本地存储器中。此外，再现控制单元确定由再现单元再现的标题是否是HDMV电影标题，并且在HDMV电影标题的情况下，再现控制单元将其再现状态存储到本地存储器中。基于与上述特定导航命令的执行相关联的再现状态和关于HDMV电影标题的登记信息，执行根据再现目标标题的恢复再现。

10. 发明授权

US07804870B2 Semiconductor optical device and manufacturing method thereof 失效
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US07804870B2
公开(公告)日：2010-09-28
申请号：US12053213
申请日：2008-03-21
申请人： Kan Takada , Mitsuru Ekawa , Tsuyoshi Yamamoto , Tatsuya Takeuchi
发明人： Kan Takada , Mitsuru Ekawa , Tsuyoshi Yamamoto , Tatsuya Takeuchi
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , H01S5/2206 , H01S5/2224 , H01S5/2226 , H01S5/3054 , H01S5/3072
摘要： In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×1018 cm−3 and the Fe concentration is 1.8×1017 cm−3. In a semi-insulating burying layer, Fe is doped as an impurity generating a deep acceptor level and the concentration thereof is 6.0×1016 cm−3. The Fe concentration in the p-type clad layer is thus three times higher than the Fe concentration in the burying layer.
摘要翻译：在p型覆盖层中，不仅掺杂p型掺杂剂Zn而且掺杂Fe。其Zn浓度为1.5×1018 cm-3，Fe浓度为1.8×1017 cm-3。在半绝缘掩埋层中，掺杂Fe作为杂质产生深受主层，其浓度为6.0×1016cm-3。因此，p型覆盖层中的Fe浓度比掩埋层中的Fe浓度高三倍。

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