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    • 5. 发明授权
    • Electrophotographic copying method
    • 电子照相复印方法
    • US4643559A
    • 1987-02-17
    • US737069
    • 1985-05-23
    • Tadashi Tonegawa
    • Tadashi Tonegawa
    • G03G15/04G03G15/22G03G15/00
    • G03G15/04009G03G15/22
    • There is disclosed an electrophotographic copying method applicable to an electrophotographic copying machine providing a photo-sensitive drum (hereinafter referred to as a first drum) and a drum capable of being brought into contact with or being separated from the first drum on the surface of which an insulation film is formed (hereinafter referred to as a second drum).According to the present method, a latent image formed on the first drum is developed and, thereafter, the toner image transferred to the second drum first. The image transferred to the second drum is used to reproduce a second latent image on the first drum to obtain a copy therefrom.
    • 公开了一种适用于提供感光鼓(以下称为第一鼓)的电子照相复印机和能够与其表面上的第一滚筒接触或分离的滚筒的电子照相复印方法 形成绝缘膜(以下称为第二鼓)。 根据本方法,形成在第一滚筒上的潜像显影,然后将调色剂图像首先转印到第二滚筒。 转移到第二鼓的图像用于在第一滚筒上再现第二潜像以从中获得副本。
    • 8. 发明授权
    • Photoconductive device having photoconductive layer containing hydroxyl
radicals
    • 具有含羟基自由基的光电导层的光电导装置
    • US4632894A
    • 1986-12-30
    • US706669
    • 1985-02-28
    • Kunio OhashiTadashi TonegawaShoichi NagataMasatsugu Nakamura
    • Kunio OhashiTadashi TonegawaShoichi NagataMasatsugu Nakamura
    • G03G5/082H01L31/09H01L31/20G03G5/04B05D5/12G03G5/08G03G15/08
    • G03G5/08242G03G5/08228H01L31/095H01L31/202Y02E10/50Y02P70/521
    • A photoconductive device comprising a conductive substrate and a photoconductive layer applied on the conductive substrate, which photoconductive layer is made of amorphous silicon containing at least hydrogen, wherein the photoconductive layer contains hydroxy radicals.Another photoconductive device comprising a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer; wherein a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface and the surface protection layer has an optical energy gap larger than that of the photoconductive layer.A further photoconductive device comprising a conductive substrate; a photoconductive layer of amorphous silicon applied on the conductive substrate and a surface protection layer of amorphous silicon applied on said photoconductive layer wherein the surface protection layer contains oxygen, and is doped with a IIIb element.
    • 一种光电导器件,包括导电衬底和施加在导电衬底上的光电导层,该光电导层由至少含有氢的非晶硅制成,其中光电导层含有羟基。 另一光导器件包括导电衬底,至少含有氢的非晶硅光电导层和施加在光电导层上的表面保护层; 其中在光电导层中至少在与表面保护层的界面附近添加掺杂剂,并且掺杂剂的浓度在垂直于界面的方向上增加,并且表面保护层的光能隙大于光电导层的光能隙 层。 一种另外的光电导器件,包括导电衬底; 施加在导电基板上的非晶硅光电导层和施加在所述光电导层上的非晶硅表面保护层,其中表面保护层含有氧,并掺杂有IIIb元素。