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1. 发明授权

US5904769A Epitaxial growth method 失效
标题翻译：外延生长法
公开(公告)号：US5904769A
公开(公告)日：1999-05-18
申请号：US775353
申请日：1997-01-03
申请人： Tadashi Ohashi , Shinichi Mitani , Takaaki Honda
发明人： Tadashi Ohashi , Shinichi Mitani , Takaaki Honda
IPC分类号： C30B29/06 , C23C16/24 , C30B25/02 , H01L21/205 , C30B25/14
CPC分类号： C30B29/06 , C30B25/02
摘要： This invention provides an epitaxial growth method capable of decreasing variations of the resistance of an epitaxial layer resulting from an in-plane temperature distribution of a silicon wafer and also capable of reducing particles and haze. This epitaxial growth method is an epitaxial growth method of growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of a silicon wafer with an in-plane temperature distribution of 2 to 50.degree. C., and includes the steps of arranging the silicon wafer in a reaction vessel, supplying into the reaction vessel a source gas containing (a) silane, (b) 5 to 600 vol % of hydrogen chloride added to the silane, and (c) a dopant consisting of a boron compound or a phosphorus compound, and growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of the wafer by setting a vacuum degree of 10 to 200 torr in the reaction vessel and heating the wafer to 900 to 1100.degree. C.
摘要翻译：本发明提供一种外延生长方法，其能够降低由硅晶片的面内温度分布产生的外延层的电阻的变化，并且还能够减少颗粒和雾度。这种外延生长方法是在硅晶片的表面上生长含硼或磷掺杂的硅外延层的外延生长方法，其中平面内温度分布为2至50℃，并且包括以下步骤：硅晶片，向反应容器供应含有（a）硅烷，（b）5至600体积％的加入到硅烷中的氯化氢的源气体，以及（c）由硼化合物或磷化合物，并通过在反应容器中设置10至200托的真空度并将晶片加热至900至1100℃，在晶片表面上生长硼或磷掺杂的硅外延层。

2. 发明授权

US6132519A Vapor deposition apparatus and vapor deposition method 失效
标题翻译：蒸镀装置及气相沉积法
公开(公告)号：US6132519A
公开(公告)日：2000-10-17
申请号：US991409
申请日：1997-12-16
申请人： Tadashi Ohashi , Katuhiro Chaki , Ping Xin , Tatsuo Fujii , Katsuyuki Iwata , Shinichi Mitani , Takaaki Honda
发明人： Tadashi Ohashi , Katuhiro Chaki , Ping Xin , Tatsuo Fujii , Katsuyuki Iwata , Shinichi Mitani , Takaaki Honda
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45508 , C23C16/4401 , C23C16/455 , C23C16/54 , C30B25/14 , H01L21/02381 , H01L21/02532 , H01L21/02579 , H01L21/0262
摘要： A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.
摘要翻译：一种气相沉积装置，用于将原料气体供应到反应器中，通过气相沉积在设置在反应器中的晶片基板上形成薄膜，该装置至少包括用于将晶片基板安装在其上的转子，处理气体导入口，矫正叶片具有多个孔，以及晶片基板进入/关闭端口，其中晶片进入/关闭端口的最下部分位于距旋转器的上表面预定的高度处，晶片进/出端口的最下部分和转子的上表面被设定为大于转子上部的过渡层的厚度。在气相沉积方法中，通过使用蒸镀装置，将晶片基板安装在旋转体上，从而在晶片基板上形成缺陷少，膜厚均匀的薄膜。

3. 发明授权

US6113705A High-speed rotational vapor deposition apparatus and high-speed rotational vapor deposition thin film method 有权
标题翻译：高速旋转蒸镀装置和高速旋转蒸镀薄膜法
公开(公告)号：US6113705A
公开(公告)日：2000-09-05
申请号：US137298
申请日：1998-08-20
申请人： Tadashi Ohashi , Katuhiro Chaki , Ping Xin , Tatsuo Fujii , Katsuyuki Iwata , Shinichi Mitani , Takaaki Honda , Yuusuke Sato
发明人： Tadashi Ohashi , Katuhiro Chaki , Ping Xin , Tatsuo Fujii , Katsuyuki Iwata , Shinichi Mitani , Takaaki Honda , Yuusuke Sato
IPC分类号： C30B25/14 , C23C16/44 , C23C16/455 , C23C16/458 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/455 , C23C16/4584
摘要： There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.
摘要翻译：提供了一种用于形成薄膜的气相沉积装置，该薄膜在中空反应器的顶部包括多个反应气体供给口，反应器底部的排气口，设置在反应器内部的旋转基板保持器，衬底安装。在反应器的上部设置有形成有多个气孔的矫直叶片。反应器被分隔成具有不同内径的上部和下部，上部的内径小于下部的内径。上部的下端和下部的上端通过具有预定形状的连接部连接以使反应器的中空内部连续。通过将反应气体供应到反应器中，在放置在旋转基板保持器上的晶片基板的表面上形成薄膜。

4. 发明授权

US6059885A Vapor deposition apparatus and method for forming thin film 失效
标题翻译：蒸镀装置及薄膜形成方法
公开(公告)号：US6059885A
公开(公告)日：2000-05-09
申请号：US991407
申请日：1997-12-16
申请人： Tadashi Ohashi , Katuhiro Chaki , Ping Xin , Tatsuo Fujii , Katsuyuki Iwata , Shinichi Mitani , Takaaki Honda
发明人： Tadashi Ohashi , Katuhiro Chaki , Ping Xin , Tatsuo Fujii , Katsuyuki Iwata , Shinichi Mitani , Takaaki Honda
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/4401 , C23C16/4412 , C23C16/45502 , C23C16/45519 , C23C16/45565 , C23C16/45576 , C23C16/4584 , C30B25/14
摘要： A vapor deposition apparatus includes a cylindrical hollow reactor having gas supply ports at its upper portion and an exhaust port at its bottom portion. A rotational substrate holder, which seats a wafer substrate, is concentrically placed inside the reactor. The reactor has a straightening vane having gas holes concentrically positioned at its upper portion. Reaction gas is supplied into the reactor to form a thin film on the surface of the wafer substrate on the rotational substrate holder by vapor deposition. In one embodiment, the straightening vane is configured so that the flow rate of the reaction gas in the center portion covering the area of the wafer substrate and the gas flow rate of the reaction gas in the outer portion of the center portion are different from each other. In another embodiment, the reactor is sectioned into upper and lower portions. The inner diameter of the upper portion is smaller than the inner diameter of the lower portion. A link portion connects the lower end of the upper portion and the upper end of the lower portion. The link portion is provided with straightening gas flow-out holes. The rotational substrate holder is positioned below the lower end of the upper portion of the reactor by a predetermined height difference.
摘要翻译：蒸镀装置包括：圆筒状中空反应器，其上部具有气体供给口，底部具有排气口。旋转衬底保持器，其位于晶片衬底上，同心地放置在反应器内。反应器具有矫直叶片，其具有同心地位于其上部的气孔。将反应气体供给到反应器中，通过气相沉积在旋转基板保持器上的晶片基板的表面上形成薄膜。在一个实施例中，矫直叶片被构造成使得覆盖晶片基板的区域的中心部分中的反应气体的流量和中心部分的外部中的反应气体的气体流量各自不同其他。在另一个实施方案中，反应器被分成上部和下部。上部的内径小于下部的内径。连接部分连接上部的下端和下部的上端。连杆部设有矫直气体流出孔。旋转衬底保持器定位在反应器的上部的下端下方预定的高度差。

5. 发明授权

US5868850A Vapor phase growth apparatus 失效
标题翻译：气相生长装置
公开(公告)号：US5868850A
公开(公告)日：1999-02-09
申请号：US659498
申请日：1996-06-06
申请人： Masahiko Ichishima , Eiichi Toya , Tadashi Ohashi , Masaki Shimada , Shinichi Mitani , Takaaki Honda
发明人： Masahiko Ichishima , Eiichi Toya , Tadashi Ohashi , Masaki Shimada , Shinichi Mitani , Takaaki Honda
IPC分类号： C23C16/46 , C30B23/06 , C30B25/10 , C23C16/00
CPC分类号： C23C16/46 , C30B23/063 , C30B25/10
摘要： A vapor phase growth unit for vapor phase growing on the surface of a wafer under a heated condition, which supports the wafer with a wafer supporter within a reaction chamber and has a heater under the wafer supported by said wafer supporter, wherein a reflection plate for reflecting at least downward heat from said heater is provided, an insulation cylinder is provided surrounding the side periphery of the heater, and the reflection plate consists of vitreous carbon.
摘要翻译：一种汽相生长装置，用于在加热状态下在晶片表面上生长的气相生长装置，其在反应室内将晶片支撑在晶片支撑件上，并且在由所述晶片支撑件支撑的晶片下方具有加热器，其中，提供了来自所述加热器的至少向下的热量的反射，围绕加热器的侧边缘设置绝缘筒，并且反射板由玻璃碳组成。

6. 发明授权

US06461428B2 Method and apparatus for controlling rise and fall of temperature in semiconductor substrates 有权
标题翻译：用于控制半导体衬底温度升高和降低的方法和装置
公开(公告)号：US06461428B2
公开(公告)日：2002-10-08
申请号：US09729669
申请日：2000-12-05
申请人： Shyuji Tobashi , Tadashi Ohashi , Katsuyuki Iwata , Hiroyuki Saito , Shinichi Mitani , Takaaki Honda , Hideki Arai , Yoshitaka Murofushi , Kunihiko Suzuki , Hidenori Takahashi , Hideki Ito , Hirofumi Katsumata
发明人： Shyuji Tobashi , Tadashi Ohashi , Katsuyuki Iwata , Hiroyuki Saito , Shinichi Mitani , Takaaki Honda , Hideki Arai , Yoshitaka Murofushi , Kunihiko Suzuki , Hidenori Takahashi , Hideki Ito , Hirofumi Katsumata
IPC分类号： C30B2514
CPC分类号： C23C16/45587 , C23C16/4584 , C23C16/46 , C23C16/52 , C30B25/12 , C30B25/16 , C30B31/14 , C30B31/18
摘要： A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.
摘要翻译：控制半导体基板的温度的方法，即使在具有不同温度上升/下降特性的半导体的半导体衬底的事件中，也可以将半导体衬底的各个半导体衬底进行氧化，扩散，或化学气相沉积工艺。在加热的反应器中的半导体衬底中的各个点测量温度; 其温度上升/下降特性通过计算测量值中的温度升高速率和面内温度分布来确定; 可以从预先书写的多个温度控制程序中自动选择适合于所述温度上升/下降特性的温度控制程序; 基于所选择的温度控制程序来控制半导体衬底。还提供了一种感受器，用于在半导体衬底上形成薄膜时减少含有气体流的金属杂质的半导体衬底的污染，以及使用这种感受体的气相薄膜生长装置。基座形成有从基座的相反侧的周边部分向下突出的气流导流器，以使沿基座的相反侧旋转的气流从其中心偏转到其周边部分。

7. 发明授权

US06245313B1 Process for manufacturing a product of glassy carbon 失效
标题翻译：玻璃碳制品的制造方法
公开(公告)号：US06245313B1
公开(公告)日：2001-06-12
申请号：US09312695
申请日：1999-05-17
申请人： Kunihiko Suzuki , Takaaki Honda , Shinichi Mitani , Tadashi Ohashi , Shuji Tobashi
发明人： Kunihiko Suzuki , Takaaki Honda , Shinichi Mitani , Tadashi Ohashi , Shuji Tobashi
IPC分类号： C01B3102
CPC分类号： C04B35/524
摘要： The object of the present invention is to provide a process for manufacturing a product of glassy carbon, having endurance strength to fatigue at elevated temperature, and to thermal fatigue. After curing the material resin in a mold, the cured resin is baked to obtain a glassy carbon piece. The piece is then machined into a predetermined shape. Subsequently, the surface of the piece resulted after machining, is impregnated with the resin. Further, the resin-impregnated piece is baked so as to transform the impregnated resin into glassy carbon.
摘要翻译：本发明的目的是提供一种制造玻璃碳的产品的方法，其具有耐高温疲劳强度和高温疲劳性能。在模具中固化材料树脂后，将固化的树脂烘烤以获得玻璃碳片。然后将该件加工成预定的形状。随后，在机械加工之后，片材的表面被树脂浸渍。此外，将树脂浸渍片烘烤以将浸渍树脂转变成玻璃碳。

8. 发明授权

US06537924B2 Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate 失效
公开(公告)号：US06537924B2
公开(公告)日：2003-03-25
申请号：US09921893
申请日：2001-08-06
申请人： Shuji Tobashi , Tadashi Ohashi , Shinichi Mitani , Hideki Arai , Hidenori Takahashi
发明人： Shuji Tobashi , Tadashi Ohashi , Shinichi Mitani , Hideki Arai , Hidenori Takahashi
IPC分类号： H01L2131
CPC分类号： C30B29/06 , C23C16/24 , C23C16/4584 , C30B25/14 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

9. 发明授权

US06485573B2 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus 有权
标题翻译：减压外延生长装置及其控制方法
公开(公告)号：US06485573B2
公开(公告)日：2002-11-26
申请号：US09855654
申请日：2001-05-16
申请人： Katsuyuki Iwata , Tadashi Ohashi , Shyuji Tobashi , Shinichi Mitani , Hideki Arai , Hideki Ito
发明人： Katsuyuki Iwata , Tadashi Ohashi , Shyuji Tobashi , Shinichi Mitani , Hideki Arai , Hideki Ito
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/45557 , C23C16/4584 , C23C16/52 , C30B25/12 , C30B25/14
摘要： An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus. The apparatus comprises a purging gas introduction pipe 6 for purging the interior of the rotary mechanical portion, a purging gas exhaust pipe 7 for exhausting the gas introduced through the purging gas introduction pipe, a pressure adjusting valve 41 provided in the purging gas exhaust pipe, a pressure gauge 21 for detecting the pressure in the rotary mechanical portion, and an arithmetic/control unit 31 for executing an arithmetic operation based upon the detected pressure and for controlling the opening degree of the pressure adjusting valve 41 provided in the purging gas exhaust pipe, so that the pressure in the rotary mechanical portion assumes a proper value.
摘要翻译：一种通过抑制构成旋转机械部分的机器部件上的污染并通过将旋转机械部分中的压力维持在特定范围内来抑制半导体晶片上的污染物的减压气相外延生长装置，以及控制方法上述装置。该装置包括用于清洗旋转机械部分内部的净化气体引入管6，用于排出通过吹扫气体导入管引入的气体的净化气体排出管7，设置在净化气体排出管中的压力调节阀41，用于检测旋转机械部分中的压力的压力计21以及用于基于检测到的压力执行算术运算并且用于控制设置在净化气体排出管中的压力调节阀41的开度的运算/控制单元31 ，使得旋转机械部分中的压力呈现适当的值。

10. 发明授权

US5700992A Zigzag heating device with downward directed connecting portions 失效
标题翻译：具有向下定向连接部分的曲折加热装置
公开(公告)号：US5700992A
公开(公告)日：1997-12-23
申请号：US525266
申请日：1995-09-07
申请人： Takaaki Honda , Shinichi Mitani
发明人： Takaaki Honda , Shinichi Mitani
IPC分类号： C23C16/46 , C30B25/10 , C30B31/12 , F27B5/14 , H05B3/24 , H05B3/62 , H05B3/02 , H01C3/00 , H05B3/00
CPC分类号： C23C16/46 , C30B25/10 , C30B31/12 , F27B5/14 , H05B3/24 , H05B3/62
摘要： A heating device has a plurality of strip heating portions separated by a plurality of slits. The strip heating portions are connected to one another by connecting portions, thereby forming a heating surface in which a zigzag current path extends. The connecting portions in which uneven-temperature regions exist are bent so as not to be positioned in the same plane as the heating surface, thereby making the heating surface, to be opposed to an object to be heated, to have a uniform temperature.
摘要翻译：加热装置具有由多个狭缝分开的多个带状加热部。带状加热部分通过连接部彼此连接，从而形成锯齿形电流路径延伸的加热面。其中存在不均匀温度区域的连接部分被弯曲成不与加热表面位于同一平面上，从而使加热表面与待加热物体相对应具有均匀的温度。

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