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1. 发明申请

US20090169854A1 Porous Member 审中-公开
标题翻译：多孔会员
公开(公告)号：US20090169854A1
公开(公告)日：2009-07-02
申请号：US12225696
申请日：2007-03-29
申请人： Tadahiro Ohmi , Yukio Kishi , Mabito Iguchi , Yoshitaka Ichikawa , Yusuke Komatsu
发明人： Tadahiro Ohmi , Yukio Kishi , Mabito Iguchi , Yoshitaka Ichikawa , Yusuke Komatsu
IPC分类号： C04B35/01 , C04B33/02
CPC分类号： C04B38/0058 , C04B35/111 , C04B35/505 , C04B35/6316 , C04B2235/3418 , C04B2235/36 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/72 , C04B2235/77 , Y10T428/249921 , C04B35/00 , C04B38/0054
摘要： To provide a porous member that can suppress energy loss in a microwave band and can evenly disperse gas when used in a field requiring a high level of cleanness. The porous member is formed of porous ceramics and has a dielectric loss tangent of not more than 1×10−3 in a microwave band. A ceramic member has sintered ceramics including the porous member at a part thereof.
摘要翻译：提供能够抑制微波带中的能量损失的多孔构件，并且当在需要高清洁度的场中使用时可以均匀地分散气体。多孔构件由多孔陶瓷形成，并且在微波带中具有不大于1×10 -3的介电损耗角正切。陶瓷构件的一部分具有包括多孔构件的烧结陶瓷。

2. 发明申请

US20090101070A1 Member for a Plasma Processing Apparatus and Method of Manufacturing the Same 审中-公开
标题翻译：等离子体处理装置的成员及其制造方法
公开(公告)号：US20090101070A1
公开(公告)日：2009-04-23
申请号：US12224784
申请日：2007-02-20
申请人： Tadahiro Ohmi , Masafumi Kitano , Yoshihumi Tsutai , Keisuke Satou , Mabito Iguchi
发明人： Tadahiro Ohmi , Masafumi Kitano , Yoshihumi Tsutai , Keisuke Satou , Mabito Iguchi
IPC分类号： C23C28/04
CPC分类号： C04B41/87 , C03C17/25 , C03C2217/228 , C03C2218/113 , C04B41/009 , C04B41/5031 , C04B41/5045 , C23C4/10 , C23C18/1208 , C23C18/1254 , C23C18/1279 , C23C28/042 , C04B41/4531 , C04B41/4537 , C04B35/10 , C04B35/00
摘要： A member for a plasma processing apparatus, which is excellent in film-formability, durability, and reliability, is provided.On a substrate, a ceramic film having a purity not less than 98% is provided. In the ceramic film, grains constituting the film have a grain diameter not greater than 50 nm and the amount of moisture released from the film is not more than 1019 molecules/cm2.
摘要翻译：提供了一种等离子体处理装置的成膜性，耐久性和可靠性优异的构件。在基材上提供纯度不低于98％的陶瓷膜。在陶瓷膜中，构成膜的晶粒的粒径不大于50nm，从膜释放的水分量不大于1019分子/ cm 2。

3. 发明授权

US08124240B2 Protective film structure of metal member, metal component employing protective film structure, and equipment for producing semiconductor or flat-plate display employing protective film structure 有权
标题翻译：金属构件的保护膜结构，采用保护膜结构的金属成分，以及使用保护膜结构制造半导体或平板显示器的设备
公开(公告)号：US08124240B2
公开(公告)日：2012-02-28
申请号：US11917633
申请日：2006-06-16
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Hitoshi Morinaga , Yasuhiro Kawase , Masafumi Kitano , Fumikazu Mizutani , Makoto Ishikawa , Yukio Kishi
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Hitoshi Morinaga , Yasuhiro Kawase , Masafumi Kitano , Fumikazu Mizutani , Makoto Ishikawa , Yukio Kishi
IPC分类号： B32B9/00
CPC分类号： C23C4/02 , C23C8/80 , C23C28/00 , C23C28/042 , C25D11/02 , C25D11/04 , C25D11/08 , C25D11/10 , C25D11/16 , C25D11/18 , Y10T428/26 , Y10T428/265 , Y10T428/31678
摘要： A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.
摘要翻译：一种用于半导体制造装置的金属构件的保护膜结构，所述保护膜结构包括由铝合金的基材金属的直接阳极氧化形成的无缺陷氧化铝的第一涂层; 以及通过等离子喷涂法形成在第一涂层上并由氧化钇制成的第二涂层。

4. 发明申请

US20090142588A1 Protective Film Structure of Metal Member, Metal Component Employing Protective Film Structure, and Equipment for Producing Semiconductor or Flat-Plate Display Employing Protective Film Structure 有权
标题翻译：金属部件的保护膜结构，使用保护膜结构的金属部件以及使用保护膜结构的半导体或平板显示器的生产设备
公开(公告)号：US20090142588A1
公开(公告)日：2009-06-04
申请号：US11917633
申请日：2006-06-16
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Hitoshi Morinaga , Yasuhiro Kawase , Masafumi Kitano , Fumikazu Mizutani , Makoto Ishikawa , Yukio Kishi
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Hitoshi Morinaga , Yasuhiro Kawase , Masafumi Kitano , Fumikazu Mizutani , Makoto Ishikawa , Yukio Kishi
IPC分类号： B32B15/00
CPC分类号： C23C4/02 , C23C8/80 , C23C28/00 , C23C28/042 , C25D11/02 , C25D11/04 , C25D11/08 , C25D11/10 , C25D11/16 , C25D11/18 , Y10T428/26 , Y10T428/265 , Y10T428/31678
摘要： Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1μ thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200 μm thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film. Consequently, contamination of the substrate with metals generated from each metal member and the inner surface of the process chamber is reduced, and stripping of the second layer protective film due to lowering in adhesion of the second layer protective film due to corrosion of the interface between the parent material and the second layer protective film can be suppressed.
摘要翻译：多功能生产设备能够实现多个工艺，其中在用于制造半导体或平板显示器的设备的处理室的内壁上沉积反应产物，由于内壁的腐蚀而引起的金属污染等，以及排出气体的处理的波动被抑制，以及用于其中的保护膜结构。在金属材料的表面上，形成通过母材直接氧化形成作为下层的1μm厚以下的氧化物被膜的第1被覆层和200μm厚的第2被覆层。通过这样的布置，可以对第二层保护膜赋予对离子或自由基的照射的耐腐蚀性，以及用于防止母体金属表面由于扩散分子或离子而导致的第二层保护层的腐蚀的保护层的效果可以将膜施加到第一层氧化物膜。因此，由金属构件和处理室的内表面产生的金属对衬底的污染减少，并且由于第二层保护膜的粘附性的降低而导致的第二层保护膜的剥离可以抑制母材和第二层保护膜。

5. 发明申请

US20090133713A1 Multilayer structural body and method for cleaning the same 审中-公开
标题翻译：多层结构体及其清洗方法
公开(公告)号：US20090133713A1
公开(公告)日：2009-05-28
申请号：US11988648
申请日：2006-07-12
申请人： Tadahiro Ohmi , Akinobu Teramoto , Hitoshi Morinaga , Yukio Kishi , Hiromichi Ohtaki , Yoshihumi Tsutai
发明人： Tadahiro Ohmi , Akinobu Teramoto , Hitoshi Morinaga , Yukio Kishi , Hiromichi Ohtaki , Yoshihumi Tsutai
IPC分类号： B08B3/12 , B32B5/16
CPC分类号： C23C4/00 , B08B3/02 , B08B3/12 , B08B2203/0288 , C23C4/02 , C23C4/11 , C23C16/405 , C23C16/545 , C23C26/00 , C23C28/04 , Y10T428/25 , Y10T428/252
摘要： It has been difficult to provide a large-sized ceramic member quickly and economically. A multilayer structure is produced by forming a ceramic film on a base which is made of a material that can be shaped comparatively easily. The ceramic film is formed by a plasma spraying method, CVD method, PVD method, sol-gel method or the like. Alternatively, the ceramic film may be formed by a method combined with a spray deposit film.
摘要翻译：很难快速，经济地提供大型陶瓷件。通过在可以相对容易地成形的材料制成的基底上形成陶瓷膜来制造多层结构体。陶瓷膜通过等离子喷涂法，CVD法，PVD法，溶胶 - 凝胶法等形成。或者，陶瓷膜可以通过与喷雾沉积膜结合的方法形成。

6. 发明授权

US09105450B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09105450B2
公开(公告)日：2015-08-11
申请号：US13145398
申请日：2009-11-02
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/32238 , H05H1/46 , H05H2001/4622
摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
摘要翻译：微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

7. 发明申请

US20140186162A1 ROTATION MECHANISM FOR GAS EXHAUST PUMP, MANUFACTURING METHOD OF THE SAME, GAS EXHAUST PUMP HAVING ROTATION MECHANISM, AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：用于排气泵的旋转机构，其制造方法，具有旋转机构的气体排气泵及其制造方法
公开(公告)号：US20140186162A1
公开(公告)日：2014-07-03
申请号：US14131299
申请日：2012-06-27
申请人： Masamichi Iwaki , Tadahiro Ohmi , Kenji Ohyama , Isao Akutsu , Hajime Iizuka
发明人： Masamichi Iwaki , Tadahiro Ohmi , Kenji Ohyama , Isao Akutsu , Hajime Iizuka
IPC分类号： F01D5/02
CPC分类号： F01D5/02 , F04C18/16 , F04C25/02 , F04C27/009 , F04C29/023 , F04C2220/30 , F04C2230/91 , Y10T29/49236
摘要： In a gas exhaust pump, there is provided a rotation mechanism that can ensure safe rotation and can greatly reduce the usage of a seal gas. A rotation mechanism of the present invention is formed of a rotating shaft and a seal housing. Between the rotating shaft and the seal housing, there is provided a predetermined gap. On at least one of an outer surface of the rotating shaft and an inner surface of the seal housing, there is provided a PFA film. As to a PFA film on a surface of at least one of the rotating shaft and the seal housing, after coating with PFA the wall surface of the rotation mechanism member defining at least the gap, followed by melting and remelting processes, the PFA film is formed to have a high smoothness on its free surface.
摘要翻译：在排气泵中，设置有能够确保安全旋转的旋转机构，能够大幅度减少密封气体的使用。本发明的旋转机构由旋转轴和密封壳构成。在旋转轴和密封壳体之间，提供预定间隙。在旋转轴的外表面和密封壳体的内表面中的至少一个上，设置有PFA膜。对于至少一个旋转轴和密封壳体的表面上的PFA膜，在用PFA涂覆之后，旋转机构构件的壁表面至少限定间隙，然后熔融和重熔过程，PFA膜是形成在其自由表面上具有高平滑度。

8. 发明授权

US08714188B2 Method for water hammerless opening of fluid passage, and method for supplying chemical solutions and device for water hammerless opening for which the method is used 有权
标题翻译：流体通道的无水锤打开方法，以及用于提供化学溶液的方法和使用该方法的无水锤打开装置
公开(公告)号：US08714188B2
公开(公告)日：2014-05-06
申请号：US13239715
申请日：2011-09-22
申请人： Tadahiro Ohmi , Kouji Nishino , Masaaki Nagase , Ryousuke Dohi , Nobukazu Ikeda , Ryutaro Nishimura
发明人： Tadahiro Ohmi , Kouji Nishino , Masaaki Nagase , Ryousuke Dohi , Nobukazu Ikeda , Ryutaro Nishimura
IPC分类号： G05D7/06
CPC分类号： F16K47/02 , Y10T137/0324 , Y10T137/0396 , Y10T137/7761 , Y10T137/7762 , Y10T137/7842 , Y10T137/86389 , Y10T137/86397 , Y10T137/86461
摘要： The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps′ of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps′ which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.
摘要翻译：无水锤打开装置包括安装在流体通道上的致动器操作型阀，向上述致动器操作型阀提供2级致动器操作压力Pa的电动气动转换装置，可拆卸地固定到在致动器操作型阀的上游侧的管道通道和输入了由振动传感器检测到的振动检测信号Pr的调谐箱，通过该调谐箱控制控制信号Sc以控制前述的操作压力Ps' 将上述的2步执行器工作压力Pa输出到电动气动变换装置，将使振动检测信号Pr接近零的阶梯操作压力Ps'的2级致动器工作压力Pa'从通过调节控制信号Sc进行电 - 气转换。

9. 发明授权

US08648393B2 Transistor and semiconductor device 有权
标题翻译：晶体管和半导体器件
公开(公告)号：US08648393B2
公开(公告)日：2014-02-11
申请号：US13372159
申请日：2012-02-13
申请人： Tadahiro Ohmi , Akinobu Teramoto , Rihito Kuroda
发明人： Tadahiro Ohmi , Akinobu Teramoto , Rihito Kuroda
IPC分类号： H01L27/148
CPC分类号： H01L27/1203 , H01L21/28202 , H01L29/518 , H01L29/78654 , H01L29/78696
摘要： An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.
摘要翻译：累积模式晶体管的沟道区域中的半导体层的杂质浓度高于2×1017cm-3，以实现大的栅极电压摆动。

10. 发明授权

US08575023B2 Contact formation method, semiconductor device manufacturing method, and semiconductor device 有权
标题翻译：接触形成方法，半导体器件制造方法和半导体器件
公开(公告)号：US08575023B2
公开(公告)日：2013-11-05
申请号：US13126249
申请日：2009-10-23
申请人： Tadahiro Ohmi , Akinobu Teramoto , Tatsunori Isogai , Hiroaki Tanaka
发明人： Tadahiro Ohmi , Akinobu Teramoto , Tatsunori Isogai , Hiroaki Tanaka
IPC分类号： H01L21/52
CPC分类号： H01L21/823814 , H01L21/28079 , H01L21/28518 , H01L21/823835 , H01L27/092 , H01L29/41733 , H01L29/458 , H01L29/4958 , H01L29/66772 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided.In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.
摘要翻译：提供了实现低电阻率的接触的半导体器件制造方法。在与半导体接触的第一金属层被用于防止氧化的第二金属层覆盖的状态下，仅将第一金属层硅化以形成不混合氧的硅化物层。作为第一金属层的材料，使用与半导体具有预定值的功函数差的金属。作为第二金属层的材料，使用在退火温度下不与第一金属层反应的金属。

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