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1. 发明申请

US20090104787A1 PLASMA NITRIDING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体氮化方法，制造半导体器件和等离子体处理装置的方法
公开(公告)号：US20090104787A1
公开(公告)日：2009-04-23
申请号：US11917013
申请日：2006-06-07
申请人： Tadahiro Ohmi , Akinobu Teramoto , Minoru Honda , Toshio Nakanishi
发明人： Tadahiro Ohmi , Akinobu Teramoto , Minoru Honda , Toshio Nakanishi
IPC分类号： H01L21/31 , G05B19/00 , C23C16/34
CPC分类号： H01L21/3185
摘要： A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots.
摘要翻译：通过使含氮气体的微波激发的高密度等离子体作用在目标物体的表面的硅上，等离子体的处理容器内，在500℃以上的过程温度下进行氮化处理处理装置。通过从具有多个槽的平面天线向处理容器提供微波产生等离子体。

2. 发明授权

US07968470B2 Plasma nitriding method, method for manufacturing semiconductor device and plasma processing apparatus 失效
标题翻译：等离子体氮化方法，半导体装置及等离子体处理装置的制造方法
公开(公告)号：US07968470B2
公开(公告)日：2011-06-28
申请号：US11917013
申请日：2006-06-07
申请人： Tadahiro Ohmi , Akinobu Teramoto , Minoru Honda , Toshio Nakanishi
发明人： Tadahiro Ohmi , Akinobu Teramoto , Minoru Honda , Toshio Nakanishi
IPC分类号： H01L21/31
CPC分类号： H01L21/3185
摘要： A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots.
摘要翻译：通过使含氮气体的微波激发的高密度等离子体作用在目标物体的表面的硅上，等离子体的处理容器内，在500℃以上的过程温度下进行氮化处理处理装置。通过从具有多个槽的平面天线向处理容器提供微波产生等离子体。

3. 发明申请

US20100323531A1 METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：形成绝缘膜的方法和制造半导体器件的方法
公开(公告)号：US20100323531A1
公开(公告)日：2010-12-23
申请号：US12521666
申请日：2007-12-20
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/314
CPC分类号： H01L21/28202 , H01L21/67109 , H01L21/67115
摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N2O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.
摘要翻译：一种形成绝缘膜的方法包括制备待加工的基板并且在表面上露出硅的步骤，对表面上的硅进行氧化并在表面上形成氧化硅薄膜的步骤的硅，对氧化硅膜及其基底硅进行氮化的步骤，形成氮氧化硅膜，以及在N 2 O气氛中对氮氧化硅膜进行热处理的工序。在这种方法中，可以在第一热处理之后进一步包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二次热处理的步骤。

4. 发明申请

US20090269940A1 METHOD FOR NITRIDING SUBSTRATE AND METHOD FOR FORMING INSULATING FILM 失效
标题翻译：氮化衬底的方法和形成绝缘膜的方法
公开(公告)号：US20090269940A1
公开(公告)日：2009-10-29
申请号：US11910354
申请日：2006-03-28
申请人： Minoru Honda , Toshio Nakanishi
发明人： Minoru Honda , Toshio Nakanishi
IPC分类号： H01L21/318 , C23C16/513
CPC分类号： H01L21/28202 , H01J2237/3387 , H01L21/3185 , H01L21/3211 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： In a substrate nitriding method for nitriding a target substrate by allowing a nitrogen-containing plasma to act on silicon on a surface of the substrate in a processing chamber of a plasma processing apparatus, the nitridation by the nitrogen-containing plasma is performed by controlling a sheath voltage Vdc around the substrate to be less than or equal to about 3.5 eV. The sheath voltage Vdc is a potential difference Vp−Vf between a plasma potential Vp in a plasma generating region and a floating potential Vf of the substrate.
摘要翻译：在等离子体处理装置的处理室中，通过使含氮等离子体在基板的表面上的硅上作用于氮化等离子体的基板氮化方法中，通过控制含氮等离子体的氮化，基板周围的护套电压Vdc小于或等于约3.5eV。鞘电压Vdc是等离子体产生区域中的等离子体电位Vp与衬底的浮置电位Vf之间的电位差Vp-Vf。

5. 发明申请

US20120315745A1 CRYSTALLINE SILICON FILM FORMING METHOD AND PLASMA CVD APPARATUS 审中-公开
标题翻译：晶体硅薄膜成型方法和等离子体CVD装置
公开(公告)号：US20120315745A1
公开(公告)日：2012-12-13
申请号：US13499150
申请日：2010-09-28
申请人： Daisuke Katayama , Minoru Honda , Masayuki Kohno , Toshio Nakanishi
发明人： Daisuke Katayama , Minoru Honda , Masayuki Kohno , Toshio Nakanishi
IPC分类号： H01L21/20 , C23C16/511
CPC分类号： C23C16/24 , C23C16/511 , H01J37/32192 , H01J37/3222 , H01J2237/3321 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H05H1/46
摘要： A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as SinH2n+2 (n is equal to or larger than 2) by the microwave; and depositing a crystalline silicon film on the surface of the processing target substrate by performing the plasma CVD process with the plasma.
摘要翻译：通过进行等离子体CVD工艺，能够以高成膜速度形成高质量的结晶硅膜。在通过使用等离子体CVD装置通过具有多个孔的平面天线将微波引入处理室并产生等离子体的用于在处理对象物体的表面上形成结晶硅膜的结晶硅膜形成方法中，硅膜形成方法包括通过微波激发含有表示为SinH2n + 2（n等于或大于2）的硅化合物的成膜气体来产生等离子体; 以及通过用等离子体进行等离子体CVD处理，在处理对象基板的表面上沉积晶体硅膜。

6. 发明申请

US20120126376A1 SILICON DIOXIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE 审中-公开
标题翻译：二氧化硅膜及其制造方法，计算机可读存储介质和等离子体CVD装置
公开(公告)号：US20120126376A1
公开(公告)日：2012-05-24
申请号：US13121606
申请日：2009-09-29
申请人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Junya Miyahara
发明人： Minoru Honda , Toshio Nakanishi , Masayuki Kohno , Junya Miyahara
IPC分类号： H01L29/06 , C23C16/52 , H01L21/316 , C23C16/511
CPC分类号： H01L21/31612 , C23C16/402 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01L21/02164 , H01L21/02274 , H01L29/40114 , H01L29/40117 , H01L29/513 , H01L29/518 , H01L29/792
摘要： To produce a silicon dioxide film having concentration of hydrogen atoms below or equal to 9.9×1020 atoms/cm3 in the silicon dioxide film, as measured by using secondary ion mass spectrometry (SIMS), a plasma CVD, which generate plasma by introducing microwaves into a process chamber by using a planar antenna having a plurality of apertures and forms a film, is performed by setting the pressure inside the process chamber within a range from 0.1 Pa to 6.7 Pa and by using a gas of a compound composed of silicon atoms and chlorine atoms and an oxygen containing gas.
摘要翻译：为了通过使用二次离子质谱法（SIMS）测量在二氧化硅膜中产生低于或等于9.9×1020原子/ cm3的氢原子浓度的二氧化硅膜，通过引入微波产生等离子体的等离子体CVD 通过使用具有多个孔并形成膜的平面天线的处理室，通过将处理室内的压力设定在0.1Pa〜6.7Pa的范围内，通过使用由硅原子构成的化合物的气体和氯原子和含氧气体。

7. 发明授权

US08158535B2 Method for forming insulating film and method for manufacturing semiconductor device 失效
标题翻译：绝缘膜的形成方法及半导体装置的制造方法
公开(公告)号：US08158535B2
公开(公告)日：2012-04-17
申请号：US12521666
申请日：2007-12-20
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/31
CPC分类号： H01L21/28202 , H01L21/67109 , H01L21/67115
摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N2O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.
摘要翻译：一种形成绝缘膜的方法包括制备待加工的基板并且在表面上露出硅的步骤，对表面上的硅进行氧化并在表面上形成氧化硅薄膜的步骤的硅，对氧化硅膜及其基底硅进行氮化的步骤，形成氮氧化硅膜，以及在N 2 O气氛中对氮氧化硅膜进行热处理的工序。在这种方法中，可以在第一热处理之后进一步包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二次热处理的步骤。

8. 发明申请

US20100283097A1 MOS SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译： MOS半导体存储器件
公开(公告)号：US20100283097A1
公开(公告)日：2010-11-11
申请号：US12665534
申请日：2008-06-20
申请人： Tetsuo Endoh , Masayuki Kohno , Tatsuo Nishita , Minoru Honda , Toshio Nakanishi , Yoshihiro Hirota
发明人： Tetsuo Endoh , Masayuki Kohno , Tatsuo Nishita , Minoru Honda , Toshio Nakanishi , Yoshihiro Hirota
IPC分类号： H01L27/115 , H01L29/792
CPC分类号： H01L29/792 , C23C16/308 , C23C16/345 , G11C11/5628 , G11C16/0466 , H01L27/11568 , H01L27/11578 , H01L27/11582 , H01L29/4234 , H01L29/513 , H01L29/7926
摘要： The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory device 601 includes a first insulating film 111 and fifth insulating film 115 having large bandgaps 111a and 115a, a third insulating film 113 having the smallest bandgap 113a, and a second insulating film 112 and fourth insulating film 114 interposed between the third insulating film 113 and the first and fifth insulating films 111 and 115, respectively, and having intermediate bandgaps 112a and 114a.
摘要翻译：本发明提供一种实现优异的数据保持特性的MOS半导体存储器件，同时还实现了高速数据写入性能，低功率操作性能和高可靠性。 MOS半导体存储器件601包括具有较大带隙111a和115a的第一绝缘膜111和第五绝缘膜115，具有最小带隙113a的第三绝缘膜113和介于第三绝缘膜113之间的第二绝缘膜112和第四绝缘膜114。绝缘膜113和第一和第五绝缘膜111和115，并具有中间带隙112a和114a。

9. 发明申请

US20090241310A1 RLSA CVD DEPOSITION CONTROL USING HALOGEN GAS FOR HYDROGEN SCAVENGING 失效
标题翻译：使用氢气进行氢气扫描的RLSA CVD沉积控制
公开(公告)号：US20090241310A1
公开(公告)日：2009-10-01
申请号：US12059100
申请日：2008-03-31
申请人： Jozef Brcka , Song Yun Kang , Toshio Nakanishi , Peter L.G. Ventzek , Minoru Honda , Masayuki Kohno
发明人： Jozef Brcka , Song Yun Kang , Toshio Nakanishi , Peter L.G. Ventzek , Minoru Honda , Masayuki Kohno
IPC分类号： H01L21/00 , B66C17/08
CPC分类号： C23C16/345 , C23C16/511 , H01J37/32192 , H01J37/3222 , Y10T29/41
摘要： Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si2H6+NH3+Ar gas mixtures using a radial line slot antenna (RLSA) microwave plasma to deposit SiN by CVD, deposition rate and film uniformity are improved by limiting the amounts of atomic or molecular hydrogen from the gas mixture during the deposition process. A halogen, for example, fluorine, is added to a gas mixture of silane or disilane, ammonia and argon. The halogen scavenges hydrogen from the mixture, and prevents the hydrogen from blocking the nitrogen and silicon atoms and their fragments from bonding to the surface atoms and to grow stoichiometric silicon nitride. Adding the halogen generates free halogen radicals that react with hydrogen to create hydrogen halide, for example, HF or HCl, thereby scavenging the hydrogen.
摘要翻译：微波等离子体中复合气体混合物中氮化硅的化学气相沉积（CVD）控制了膜厚均匀性和化学计量，沉积速率增加。在使用径向线槽天线（RLSA）微波等离子体通过CVD沉积SiN的Si 2 H 6 + NH 3 + Ar气体混合物中，通过在沉积过程中限制来自气体混合物的原子或分子氢的量来提高沉积速率和膜均匀性。将卤素，例如氟加入到硅烷或乙硅烷，氨和氩的气体混合物中。卤素从混合物中清除氢，并且防止氢阻挡氮和硅原子及其片段与表面原子结合并生长化学计量的氮化硅。加入卤素产生与氢反应产生卤化氢，例如HF或HCl的游离卤素自由基，从而清除氢。

10. 发明授权

US08247331B2 Method for forming insulating film and method for manufacturing semiconductor device 失效
标题翻译：绝缘膜的形成方法及半导体装置的制造方法
公开(公告)号：US08247331B2
公开(公告)日：2012-08-21
申请号：US12521645
申请日：2007-12-20
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/318 , H01L21/321
CPC分类号： H01L21/28202 , H01J37/32192 , H01L21/67109 , H01L21/67115
摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1 nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N2O atmosphere and forming a silicon nitride film. This method may further include a step of performing second nitriding to the silicon oxynitride film, and furthermore, may include a step of performing second heat treatment to the silicon oxynitride film after the second nitriding.
摘要翻译：一种形成绝缘膜的方法包括制备待加工的基片并且在表面上具有硅的步骤; 对在基板表面露出的硅进行第一次氮化，在基板表面形成厚度为0.2nm以上且1nm以下的氮化硅膜的工序; 以及对N 2 O气氛中的氮化硅膜进行第一热处理并形成氮化硅膜的工序。该方法还可以包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二热处理的步骤。

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