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1. 发明授权

US5139623A Method of forming oxide film on stainless steel 失效
标题翻译：在不锈钢上形成氧化膜的方法
公开(公告)号：US5139623A
公开(公告)日：1992-08-18
申请号：US816345
申请日：1991-12-20
申请人： Tadahiro Ohmi , Akihiko Hogetsu , Kenichi Ushikoshi , Masao Saito
发明人： Tadahiro Ohmi , Akihiko Hogetsu , Kenichi Ushikoshi , Masao Saito
IPC分类号： B01D19/00 , B01D61/20 , C02F1/02 , C02F1/04 , C02F1/20 , C02F1/44
CPC分类号： C02F9/00 , B01D19/0047 , B01D61/20 , C02F1/02 , C02F1/045 , C02F1/20 , C02F1/444 , C02F2103/04 , Y10S210/90
摘要： This disclosure relates to a method of forming a tinted oxide film on the surface of austenite stainless steel. The method comprises electropolishing the surface, oxidizing the surface at a temperature to form the oxide film and then cleaning the film with a weak acid.
摘要翻译：本公开涉及在奥氏体不锈钢的表面上形成有色氧化物膜的方法。该方法包括电解抛光表面，在一定温度下氧化表面以形成氧化膜，然后用弱酸清洗该膜。

2. 发明授权

US5124033A Ultrapure water producing system 失效
标题翻译：超纯水生产系统
公开(公告)号：US5124033A
公开(公告)日：1992-06-23
申请号：US516760
申请日：1990-04-30
申请人： Tadahiro Ohmi , Akihiko Hogetsu , Kenichi Ushikoshi , Masao Saito
发明人： Tadahiro Ohmi , Akihiko Hogetsu , Kenichi Ushikoshi , Masao Saito
IPC分类号： B01D19/00 , B01D61/20 , C02F1/02 , C02F1/04 , C02F1/20 , C02F1/44
CPC分类号： C02F9/00 , B01D19/0047 , B01D61/20 , C02F1/02 , C02F1/045 , C02F1/20 , C02F1/444 , C02F2103/04 , Y10S210/90
摘要： This disclosure relates to an ultrapure water producing system having a primary ultrapure water system including a pretreatment process into which raw water is fed, and a primary ultrapure water device connected to the outlet of the pretreatment process. A reservoir is connected to the outlet of the primary ultrapure water device. A secondary ultrapure water system includes a pump having an inlet connected to the reservoir, a polisher connected to the outlet of the pump, and first use point connected to the outlet of the polisher and to the reservoir. A branch line is connected to the outlet of the polisher and has a heating and deaerating part connected thereto, and a high-temperature second use point is connected to the outlet of the heating and deaerating part.
摘要翻译：本公开涉及一种超纯水生产系统，其具有包括进料原水的预处理工艺的初级超纯水系统和连接到预处理工艺的出口的一次超纯水装置。储水器连接到初级超纯水装置的出口。第二超纯水系统包括具有连接到储存器的入口的泵，连接到泵的出口的抛光器和连接到抛光器的出口和储存器的第一使用点。分支线连接到抛光机的出口，并具有连接到其上的加热和脱气部分，并且高温第二使用点连接到加热和脱气部件的出口。

3. 发明授权

US09105450B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09105450B2
公开(公告)日：2015-08-11
申请号：US13145398
申请日：2009-11-02
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/32238 , H05H1/46 , H05H2001/4622
摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
摘要翻译：微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

4. 发明申请

US20140186162A1 ROTATION MECHANISM FOR GAS EXHAUST PUMP, MANUFACTURING METHOD OF THE SAME, GAS EXHAUST PUMP HAVING ROTATION MECHANISM, AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：用于排气泵的旋转机构，其制造方法，具有旋转机构的气体排气泵及其制造方法
公开(公告)号：US20140186162A1
公开(公告)日：2014-07-03
申请号：US14131299
申请日：2012-06-27
申请人： Masamichi Iwaki , Tadahiro Ohmi , Kenji Ohyama , Isao Akutsu , Hajime Iizuka
发明人： Masamichi Iwaki , Tadahiro Ohmi , Kenji Ohyama , Isao Akutsu , Hajime Iizuka
IPC分类号： F01D5/02
CPC分类号： F01D5/02 , F04C18/16 , F04C25/02 , F04C27/009 , F04C29/023 , F04C2220/30 , F04C2230/91 , Y10T29/49236
摘要： In a gas exhaust pump, there is provided a rotation mechanism that can ensure safe rotation and can greatly reduce the usage of a seal gas. A rotation mechanism of the present invention is formed of a rotating shaft and a seal housing. Between the rotating shaft and the seal housing, there is provided a predetermined gap. On at least one of an outer surface of the rotating shaft and an inner surface of the seal housing, there is provided a PFA film. As to a PFA film on a surface of at least one of the rotating shaft and the seal housing, after coating with PFA the wall surface of the rotation mechanism member defining at least the gap, followed by melting and remelting processes, the PFA film is formed to have a high smoothness on its free surface.
摘要翻译：在排气泵中，设置有能够确保安全旋转的旋转机构，能够大幅度减少密封气体的使用。本发明的旋转机构由旋转轴和密封壳构成。在旋转轴和密封壳体之间，提供预定间隙。在旋转轴的外表面和密封壳体的内表面中的至少一个上，设置有PFA膜。对于至少一个旋转轴和密封壳体的表面上的PFA膜，在用PFA涂覆之后，旋转机构构件的壁表面至少限定间隙，然后熔融和重熔过程，PFA膜是形成在其自由表面上具有高平滑度。

5. 发明授权

US08714188B2 Method for water hammerless opening of fluid passage, and method for supplying chemical solutions and device for water hammerless opening for which the method is used 有权
标题翻译：流体通道的无水锤打开方法，以及用于提供化学溶液的方法和使用该方法的无水锤打开装置
公开(公告)号：US08714188B2
公开(公告)日：2014-05-06
申请号：US13239715
申请日：2011-09-22
申请人： Tadahiro Ohmi , Kouji Nishino , Masaaki Nagase , Ryousuke Dohi , Nobukazu Ikeda , Ryutaro Nishimura
发明人： Tadahiro Ohmi , Kouji Nishino , Masaaki Nagase , Ryousuke Dohi , Nobukazu Ikeda , Ryutaro Nishimura
IPC分类号： G05D7/06
CPC分类号： F16K47/02 , Y10T137/0324 , Y10T137/0396 , Y10T137/7761 , Y10T137/7762 , Y10T137/7842 , Y10T137/86389 , Y10T137/86397 , Y10T137/86461
摘要： The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps′ of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps′ which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.
摘要翻译：无水锤打开装置包括安装在流体通道上的致动器操作型阀，向上述致动器操作型阀提供2级致动器操作压力Pa的电动气动转换装置，可拆卸地固定到在致动器操作型阀的上游侧的管道通道和输入了由振动传感器检测到的振动检测信号Pr的调谐箱，通过该调谐箱控制控制信号Sc以控制前述的操作压力Ps' 将上述的2步执行器工作压力Pa输出到电动气动变换装置，将使振动检测信号Pr接近零的阶梯操作压力Ps'的2级致动器工作压力Pa'从通过调节控制信号Sc进行电 - 气转换。

6. 发明授权

US08648393B2 Transistor and semiconductor device 有权
标题翻译：晶体管和半导体器件
公开(公告)号：US08648393B2
公开(公告)日：2014-02-11
申请号：US13372159
申请日：2012-02-13
申请人： Tadahiro Ohmi , Akinobu Teramoto , Rihito Kuroda
发明人： Tadahiro Ohmi , Akinobu Teramoto , Rihito Kuroda
IPC分类号： H01L27/148
CPC分类号： H01L27/1203 , H01L21/28202 , H01L29/518 , H01L29/78654 , H01L29/78696
摘要： An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.
摘要翻译：累积模式晶体管的沟道区域中的半导体层的杂质浓度高于2×1017cm-3，以实现大的栅极电压摆动。

7. 发明授权

US08575023B2 Contact formation method, semiconductor device manufacturing method, and semiconductor device 有权
标题翻译：接触形成方法，半导体器件制造方法和半导体器件
公开(公告)号：US08575023B2
公开(公告)日：2013-11-05
申请号：US13126249
申请日：2009-10-23
申请人： Tadahiro Ohmi , Akinobu Teramoto , Tatsunori Isogai , Hiroaki Tanaka
发明人： Tadahiro Ohmi , Akinobu Teramoto , Tatsunori Isogai , Hiroaki Tanaka
IPC分类号： H01L21/52
CPC分类号： H01L21/823814 , H01L21/28079 , H01L21/28518 , H01L21/823835 , H01L27/092 , H01L29/41733 , H01L29/458 , H01L29/4958 , H01L29/66772 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided.In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.
摘要翻译：提供了实现低电阻率的接触的半导体器件制造方法。在与半导体接触的第一金属层被用于防止氧化的第二金属层覆盖的状态下，仅将第一金属层硅化以形成不混合氧的硅化物层。作为第一金属层的材料，使用与半导体具有预定值的功函数差的金属。作为第二金属层的材料，使用在退火温度下不与第一金属层反应的金属。

8. 发明授权

US08551830B2 Semiconductor integrated circuit switch matrix 有权
标题翻译：半导体集成电路开关矩阵
公开(公告)号：US08551830B2
公开(公告)日：2013-10-08
申请号：US12110800
申请日：2008-04-28
申请人： Tadahiro Ohmi , Koji Kotani , Kazuyuki Maruo , Takahiro Yamaguchi
发明人： Tadahiro Ohmi , Koji Kotani , Kazuyuki Maruo , Takahiro Yamaguchi
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L27/12 , H01L21/8221 , H01L27/0688 , Y10S257/903
摘要： There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.
摘要翻译：提供电路面积小，布线长度短的小型半导体集成电路。半导体集成电路构造为多层结构，并且设置有第一半导体层，形成在第一半导体层中的第一半导体层晶体管，布置在第一半导体层上并且其中金属线为形成，沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。注意，第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘，并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜或自由基氮化。

9. 发明授权

US08465719B2 Silicon carbide substrate, semiconductor device, wiring substrate, and silicon carbide manufacturing method 有权
标题翻译：碳化硅衬底，半导体器件，布线衬底和碳化硅制造方法
公开(公告)号：US08465719B2
公开(公告)日：2013-06-18
申请号：US12425247
申请日：2009-04-16
申请人： Tadahiro Ohmi , Akinobu Teramoto , Sumio Sano , Fusao Fujita
发明人： Tadahiro Ohmi , Akinobu Teramoto , Sumio Sano , Fusao Fujita
IPC分类号： C01B31/36
CPC分类号： C23C16/325 , C23C16/01 , C23C16/56 , H01L23/49866 , H01L2924/0002 , H01L2924/3011 , H05K1/024 , H05K1/0306 , H05K3/0011 , H05K2203/1105 , H01L2924/00
摘要： A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less.
摘要翻译：在20GHz时，碳化硅衬底具有等于或小于2.0dB / mm的高频损耗有效地安装和操作电子元件。将碳化硅衬底在2000℃或更高温度下加热至20GHz时降低至2.0dB / mm以下的高频损耗。此外，通过CVD制造碳化硅衬底，而不将氮气流入加热器，能够将高频损耗降低到2.0dB / mm以下。

10. 发明申请

US20130140700A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20130140700A1
公开(公告)日：2013-06-06
申请号：US13814950
申请日：2011-08-04
申请人： Tadahiro Ohmi
发明人： Tadahiro Ohmi
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/481 , H01L21/02167 , H01L21/0217 , H01L21/02247 , H01L21/02252 , H01L21/02274 , H01L21/30604 , H01L21/3065 , H01L21/3081 , H01L21/76843 , H01L21/76898 , H01L25/0657 , H01L2224/16
摘要： Provided is a method of manufacturing a TSV structure, which prevents a substrate from warping even if it is made thin. A method of manufacturing a semiconductor device comprises integrating semiconductor elements on a surface of a semiconductor substrate to form at least a part of a circuit, forming holes from the surface of the semiconductor substrate, forming an insulating film and a barrier film on an inner surface of each hole, forming a conductive metal on a surface of the barrier film to fill each hole, processing a back surface of the semiconductor substrate to reduce the thickness thereof to thereby protrude the conductive metal, and providing a SiCN film on the back surface of the semiconductor substrate.
摘要翻译：提供一种制造TSV结构的方法，即使其变薄，也可防止基板翘曲。一种制造半导体器件的方法包括：在半导体衬底的表面上集成半导体元件以形成电路的至少一部分，从半导体衬底的表面形成空穴，在内表面上形成绝缘膜和阻挡膜的每个孔，在阻挡膜的表面上形成导电金属以填充每个孔，处理半导体衬底的背面以减小其厚度，从而突出导电金属，并在导电金属的背面提供SiCN膜半导体衬底。

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